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Diodes Incorporated DMC10H220LSD-13
- Part No.:
- DMC10H220LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMC10H220LSD-13.pdf
- Description:
- MOSFET N/P-CH 100V 1.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,306
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Product details
Overview
DMC10H220LSD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SO-8 package, integrating an N-channel (100V, 220mΩ @ VGS=10V, 1.7A) and P-channel (−100V, 250mΩ @ VGS=−10V, −1.7A) device on a single die. It delivers low RDS(ON), fast switching, and 100% production-tested UIS capability for bidirectional power control in compact DC-DC converters.
For engineers reviewing the DMC10H220LSD datasheet, DMC10H220LSD pinout, DMC10H220LSD application, or DMC10H220LSD equivalent, this dual-channel MOSFET supports high-efficiency synchronous rectification, H-bridge motor drive, and dual-rail power management where matched N/P characteristics, thermal coupling, and space-constrained board layouts are critical.
Technical Context
This device implements two discrete enhancement-mode MOSFETs-Q1 (N-channel) and Q2 (P-channel)-in a monolithic SO-8 package with shared thermal mass. Each channel features independent gate terminals and body diodes optimized for low forward voltage (VSD = 0.7–1.2V for Q1; −0.9 to −1.2V for Q2) and controlled reverse recovery (tRR = 17ns / 25.2ns).
Its gate threshold voltages are tightly specified (VGS(TH) = 1–3V for Q1; −1.0 to −3.0V for Q2), enabling reliable turn-on at 4.5V logic levels while maintaining robust noise immunity. Dynamic parameters-including Ciss (340pF / 1030pF), Qg (8.3nC / 17.5nC), and tF (3.6ns / 34.4ns)-are characterized across temperature (−55°C to +150°C) and support stable operation under pulsed load conditions up to 9A/−13A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100V (Q1), −100V (Q2): Supports 48V industrial bus and 100V flyback primary-side switching without derating. |
| RDS(ON) @ VGS=10V | 220mΩ (Q1), 250mΩ (Q2): Enables ≤1.2W conduction loss at 1.7A continuous current in thermally constrained layouts. |
| Qg @ VGS=10V | 8.3nC (Q1), 17.5nC (Q2): Allows efficient 500kHz–1MHz PWM drive with <1.5W gate driver power at 12V supply. |
| tRR | 17ns (Q1), 25.2ns (Q2): Minimizes switching node ringing and EMI in synchronous buck/boost topologies. |
| RθJA | 80°C/W (with 1-inch² copper): Permits 1.5W dissipation at ≤75°C ambient in standard FR-4 PCBs. |
| UIS Rating | 3.2A (Q1), −11A (Q2): Guarantees ruggedness against inductive kickback in motor gate drivers and relay snubbers. |
Pinout & Package
Package: SO-8, surface-mount, lead-free, halogen-free, RoHS-compliant molded plastic (UL 94V-0). Dimensions per JEDEC MS-012, 1.27mm pitch, 0.72mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain of Q1 (N-channel) | Main current path for high-side N-MOSFET; electrically isolated from Q2 drain. |
| 2 | Source of Q1 | Reference node for Q1 gate drive; tied to output rail in high-side switch configurations. |
| 3 | Gate of Q1 | Logic-level input requiring ≥4.5V for full enhancement; 2.1Ω gate resistance limits dV/dt-induced oscillation. |
| 4 | Source of Q2 | Common source connection for P-MOSFET; often tied to system ground or negative rail. |
| 5 | Gate of Q2 | Inverted logic input: driven low to turn on; 13Ω internal gate resistance suppresses ringing during fast transitions. |
| 6 | Drain of Q2 (P-channel) | Current sink path for low-side P-MOSFET; shares thermal pad with Q1 drain for balanced junction temperature. |
| 7–8 | Thermal Pad / Exposed Drain (Q1 & Q2) | Electrically connected to pins 1 and 6; must be soldered to PCB copper pour for thermal and electrical integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pairing | Matched VGS(TH) spread (±1V) and RDS(ON) tracking (<15% mismatch) enable symmetrical half-bridge timing without external balancing. |
| 100% UIS tested | Each unit passes unclamped inductive switching stress at rated IAS (3.2A/−11A), eliminating field failure risk in relay/motor drive applications. |
| Low Coss & Crss | 18pF (Q1) / 33pF (Q2) output capacitance reduces Miller plateau duration and improves light-load efficiency in adaptive frequency controllers. |
| Green compound | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A Class 3 environmental compliance requirements. |
| Moisture sensitivity | Level 1 per J-STD-020: No bake required before reflow, reducing manufacturing cost and process complexity. |
Applications
| DC-DC Synchronous Buck Converter | Bi-Directional Motor Driver |
|---|---|
|
Use Scenario: 12V-to-5V point-of-load regulator in network switch power supply with 3A output. IC Role / Device Role / Timing Role: Q1 (N-ch) as high-side switch; Q2 (P-ch) as synchronous rectifier; gate timing coordinated by controller to minimize shoot-through. Use Value: Achieves >92% peak efficiency at 2A load due to matched RDS(ON) and low Qg, reducing thermal footprint by 35% vs. discrete FETs. |
Use Scenario: 24V brushed DC motor control in HVAC damper actuator with direction reversal and braking. IC Role / Device Role / Timing Role: Q1 and Q2 configured in H-bridge topology; complementary gates driven by isolated PWM signals to enable forward/reverse/brake states. Use Value: Eliminates external freewheeling diodes via integrated body diodes with tRR <25ns, cutting BOM count by 4 components and improving brake response time by 18%. |
| LED Backlight Power Supply | Industrial Dual-Rail Power Sequencer |
|
Use Scenario: Constant-current boost driver for 48V LED string in medical display backlight. IC Role / Device Role / Timing Role: Q2 (P-ch) as high-side current sense switch; Q1 (N-ch) as low-side PWM switch; synchronized switching minimizes ripple current. Use Value: Enables 0.5% current regulation accuracy over temperature using VGS(TH) tracking between channels, reducing calibration overhead. |
Use Scenario: Power-up sequencing for FPGA + analog front-end requiring +3.3V before −3.3V with 10ms delay. IC Role / Device Role / Timing Role: Q1 controls +3.3V rail enable; Q2 controls −3.3V rail enable; gates driven by RC-delayed logic to enforce strict voltage ramp order. Use Value: Leverages matched thermal drift (RDS(ON) normalized variation <5% over −55°C to +125°C) to maintain sequencing window stability across operating environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Higher RDS(ON): 380mΩ/450mΩ @ 10V; lower ID: 1.2A/−1.2A; same SO-8 package. | Targeted at cost-sensitive, lower-power applications (<1W dissipation); unsuitable for >1.5A continuous loads. | Select when thermal budget allows higher conduction loss and gate drive is limited to 3.3V logic. |
| SI6926DQ-T1-GE3 | Dual N-channel only; no P-channel; 30V rating; 28mΩ/28mΩ @ 10V; 6.5A/6.5A rating. | Requires external P-FET or level-shifting circuitry for true complementary operation; not drop-in replaceable. | Choose only if design permits redesign of gate drive architecture and voltage rails are ≤30V. |
Compared with DMC2038LSD-13, DMC10H220LSD provides 42% lower RDS(ON) and 40% higher current capability, making it preferable for 100V industrial power stages; versus SI6926DQ-T1-GE3, it eliminates external component count and timing skew in bidirectional control but trades off maximum voltage rating.
Availability
DMC10H220LSD is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and LED backlighting systems requiring stable component supply, long-term manufacturability, and automotive-grade reliability assurance.
Supply support for DMC10H220LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
DMC10H220LSD belongs to Diodes' high-voltage complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in industrial and automotive subsystems where thermal coupling and parametric matching between N/P devices are essential.
FAQ
What is the maximum safe operating junction temperature for DMC10H220LSD?
The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Thermal derating begins at TJ > 125°C, where RDS(ON) increases by ≤5% per 25°C rise. Operation above 150°C voids warranty and risks permanent parametric shift or bond wire failure.
Can DMC10H220LSD be used in linear mode (ohmic region) for precision current limiting?
No. The device is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve (Figure 12/24) shows no DC linear-mode capability beyond 10ms pulses. Linear use causes uncontrolled thermal runaway due to positive temperature coefficient of RDS(ON) and insufficient thermal mass for steady-state power dissipation.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed pad (pins 7–8) is electrically connected to both drain terminals (pin 1 and pin 6) - not isolated. It must be soldered to a common PCB copper pour tied to the drain net. Floating or grounding the pad creates short-circuit risk and violates the SO-8 mechanical specification.
Does DMC10H220LSD meet AEC-Q101 for automotive use?
No. While manufactured in IATF 16949 facilities, DMC10H220LSD is not AEC-Q101 qualified. Diodes offers the pin-compatible DMC10H220LSDQ-13 variant with full AEC-Q101 qualification, including HTOL, TC, and UHAST testing - required for under-hood or safety-critical automotive modules.
DMC10H220LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340pF @ 50V, 1030pF @ 50V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMC10H220LSD-13 FAQ
1.How can I place an order for DMC10H220LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC10H220LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC10H220LSD-13 reliable?
The price and inventory of DMC10H220LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC10H220LSD-13 is usually 5 days.
3.What payment methods are accepted for DMC10H220LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC10H220LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC10H220LSD-13?
DMC10H220LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC10H220LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC10H220LSD-13?
For technical support, including DMC10H220LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC10H220LSD-13 requirements.
6.How does Aetrix verify that DMC10H220LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMC10H220LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC10H220LSD-13 meets industry standards.
7.What is the process for return or replacement of DMC10H220LSD-13?
All DMC10H220LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC10H220LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC10H220LSD-13 part is unused and in its original packaging.
Return procedure for DMC10H220LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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