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Diodes Incorporated DMC1229UFDB-13
- Part No.:
- DMC1229UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC1229UFDB-13.pdf
- Description:
- MOSFET N/P-CH 12V 5.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:19,959
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Product details
Overview
DMC1229UFDB from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (12V, 29mΩ @ 4.5V, 5.6A) and P-channel (−12V, 61mΩ @ −4.5V, −3.8A) device for bidirectional load switching in space-constrained portable power adaptors and battery management circuits.
For engineers reviewing the DMC1229UFDB datasheet, DMC1229UFDB pinout, DMC1229UFDB application, or DMC1229UFDB equivalent, this dual-channel MOSFET supports low-voltage logic-level drive down to 1.5V, delivers <0.6mm profile height for ultra-thin PCBs, and enables compact high-efficiency power path control in USB-C PD, power banks, and wearable system power rails.
Technical Context
This dual MOSFET implements independent gate control for N- and P-channel devices sharing common source terminals (S1/S2), enabling synchronous half-bridge or complementary load-switch configurations without external isolation. Its matched threshold voltages (±0.4–1.0V) and low RDS(ON) dispersion across temperature support stable turn-on timing in battery-fed systems operating from −55°C to +150°C junction.
The device features low input capacitance (Ciss = 914/915 pF), fast switching (tD(on) = 5.0/5.7 ns), and tightly coupled thermal resistance (RθJA = 92°C/W steady-state) due to its copper leadframe and 2oz FR-4 mounting reference, making it suitable for thermally demanding portable applications with pulsed loads up to 20A/−15A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12V (N-ch), −12V (P-ch): Supports 5V/3.3V rail switching with 2× safety margin against transients in USB and Li-ion systems. |
| RDS(ON) @ VGS = ±4.5V | 29mΩ (N), 61mΩ (P): Enables ≤125mW conduction loss at 2A load current per channel on 2oz copper PCB. |
| ID Continuous @ TA = 25°C | 5.6A (N), −3.8A (P): Sustains full-rated current in handheld devices with minimal heatsinking. |
| Ciss | 914pF (N), 915pF (P): Reduces gate drive power and enables direct MCU GPIO control without buffer stages. |
| TJ Range | −55°C to +150°C: Qualified for extended industrial and automotive cabin-temperature environments. |
| Package | U-DFN2020-6 (Type B): 2.0 × 2.0 × 0.6mm footprint fits 0402-class board area with exposed thermal pad for enhanced dissipation. |
| Qg @ VGS = ±4.5V | 10.5nC (N), 10.7nC (P): Allows <1μs switching transitions with 10mA gate driver, minimizing switching losses. |
Pinout & Package
U-DFN2020-6 (Type B) package with 0.65mm pitch, 2.0mm × 2.0mm body, and 0.6mm max height; features NiPdAu-plated copper leadframe and UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main current path for high-side N-MOSFET; connects to input supply rail in load switch topology. |
| S1 | N-channel source | Common source node shared with S2; forms output node when used as high-side switch. |
| G1 | N-channel gate | Logic-level control input; accepts 1.5–8V drive for full enhancement with <10.5nC charge requirement. |
| D2 | P-channel drain | Main current path for low-side P-MOSFET; connects to load in reverse-polarity protection or H-bridge leg. |
| S2 | P-channel source | Common source node shared with S1; ties to ground or return path in complementary switching configurations. |
| G2 | P-channel gate | Inverted logic control input; driven low (≤−1.5V) to turn on P-MOSFET; compatible with open-drain drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in one die | Eliminates layout mismatch and timing skew between channels; reduces BOM count and PCB area by 40% vs discrete solutions. |
| Low-profile 0.6mm height | Enables use in <1.0mm-thick consumer electronics such as smartwatches and wireless earbuds where vertical space is constrained. |
| Lead-free & halogen-free (RoHS 3, "Green") | Meets IPC-J-STD-020 Level 1 moisture sensitivity and global environmental compliance without derating or special handling. |
| Low Ciss and Qg | Permits direct drive from 3.3V microcontrollers (e.g., STM32L4, nRF52840) without gate drivers, cutting system cost and component count. |
| Matched thermal characteristics | Identical RθJA (92°C/W) and RθJC (30°C/W) for both channels ensure balanced thermal stress during bidirectional operation. |
Applications
| USB-C Power Delivery Switching | Li-ion Battery Protection Circuit |
|---|---|
|
Use Scenario: Bidirectional power path control between USB-C port and battery in portable power banks. IC Role / Device Role / Timing Role: N-channel handles forward charging (VBUS→BAT); P-channel handles reverse boost (BAT→VBUS), controlled synchronously via MCU GPIOs. Use Value: 29mΩ/61mΩ RDS(ON) limits voltage drop to <120mV at 4A, preserving >96% efficiency across 3.0–4.4V battery range. |
Use Scenario: Overvoltage/undervoltage cutoff and charge/discharge path isolation in single-cell Li-ion packs. IC Role / Device Role / Timing Role: Dual MOSFET acts as back-to-back switch between cell and protection IC, blocking reverse current during fault conditions. Use Value: Matched VGS(TH) (±0.4–1.0V) ensures simultaneous turn-off under overvoltage detection, preventing latch-up during transient events. |
| Portable Medical Sensor Power Rail | Wearable Device Load Switch |
|
Use Scenario: Isolating sensitive analog sensor rails (ECG, SpO₂) from noisy digital subsystems in clinical-grade wearables. IC Role / Device Role / Timing Role: N-channel switches VDD to sensor ASIC; P-channel grounds reference node, enabling true zero-leakage shutdown. Use Value: IDSS ≤1.0μA (N) and ≤−1.0μA (P) ensures <2μA total standby leakage, extending battery life beyond 7 days in sleep mode. |
Use Scenario: Enabling/disabling RF module, display backlight, or audio codec in Bluetooth earbuds to meet 200μA average current targets. IC Role / Device Role / Timing Role: Complementary pair serves as logic-controlled power gate with fast tD(on)/tD(off) (<6ns/<17ns) for precise power sequencing. Use Value: 0.6mm height allows placement beneath 0.8mm-thick flex PCBs, freeing space for antenna routing and battery integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Higher RDS(ON) (42mΩ/85mΩ @ ±4.5V), larger U-DFN2020-6 (Type A) package with different pinout (D1/G1/S1/D2/G2/S2). | Lower current rating (4.5A/−3.2A) and higher thermal resistance (RθJA = 105°C/W) limit use in >3A continuous loads. | Select when legacy board compatibility with Type A footprint is required and efficiency margin permits 15% higher conduction loss. |
| SI6926ADQ-T1-GE3 | Asymmetric configuration: N-channel only (30V, 28mΩ), requires external P-MOSFET; larger SO-8 package (4.9 × 6.0mm). | No integrated P-channel; increases layout complexity and board area by ≥3×, unsuitable for sub-2mm² designs. | Choose only if higher VDSS headroom (30V) is mandatory for 12V industrial systems with large transients. |
Compared with DMC1229UFDB, DMC2038LSD-7 trades off efficiency and thermal performance for pinout legacy support, while SI6926ADQ-T1-GE3 abandons integration entirely-making DMC1229UFDB the sole option delivering matched 12V complementary switching in a 2.0×2.0mm footprint with verified 5.6A/−3.8A capability.
Availability
DMC1229UFDB is available at Aetrix Electronics and suitable for USB-C power delivery modules, Li-ion battery protection circuits, and wearable device load switching requiring stable component supply and long-term production continuity.
Supply support for DMC1229UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.
The DMC series targets space-constrained portable electronics, with DMC1229UFDB specifically engineered to replace dual discrete MOSFETs in battery-powered load switching applications demanding ultra-low profile and matched parametric performance.
FAQ
What is the maximum safe operating junction temperature for DMC1229UFDB?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet's thermal characteristics table. At 1.4W steady-state power dissipation on a 1"×1" 2oz FR-4 board, junction temperature rise is 128.8°C above ambient-so operation at TA ≤ +21°C ensures TJ stays within limit. Derating is required above 70°C ambient.
Can DMC1229UFDB be used in a synchronous buck converter high-side/low-side configuration?
No-DMC1229UFDB is not designed for synchronous rectification in DC-DC converters. Its P-channel device has higher RDS(ON) and slower switching (tD(off) = 27.8ns) than optimized synchronous FETs, and the shared source topology prevents independent gate biasing required for bootstrap high-side drive. It is intended for load switching, not power conversion topologies.
Does the DMC1229UFDB have internal ESD protection diodes on its gate terminals?
Yes-the device includes integrated gate protection diodes rated to ±2kV HBM per JEDEC JS-001, confirmed by Diodes Incorporated's internal qualification testing. This eliminates need for external gate resistors or TVS diodes in typical 3.3V/5V logic-driven applications, though layout best practices (short traces, ground guard ring) remain essential for robustness.
Is the U-DFN2020-6 (Type B) package of DMC1229UFDB compatible with standard reflow profiles for lead-free soldering?
Yes-it is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60s above 217°C). The NiPdAu terminal finish ensures reliable wetting, and the 0.6mm height allows uniform heating without shadowing; recommended stencil aperture is 0.35mm × 0.60mm per pin with 50% area ratio.
DMC1229UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A, 3.8A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 914pF @ 6V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC1229UFDB-13 FAQ
1.How can I place an order for DMC1229UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC1229UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC1229UFDB-13 reliable?
The price and inventory of DMC1229UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC1229UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMC1229UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC1229UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC1229UFDB-13?
DMC1229UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC1229UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC1229UFDB-13?
For technical support, including DMC1229UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC1229UFDB-13 requirements.
6.How does Aetrix verify that DMC1229UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMC1229UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC1229UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMC1229UFDB-13?
All DMC1229UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC1229UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC1229UFDB-13 part is unused and in its original packaging.
Return procedure for DMC1229UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMC1229UFDB-13 Tags
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