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Diodes Incorporated DMC2004DWK-7

Part No.:
DMC2004DWK-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMC2004DWK-7.pdf
Description:
MOSFET N/P-CH 20V 0.54A SOT363
Quantity:
Payment:
Payment
Shipping:
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Inventory:251,997

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Product details

Overview

DMC2004DWK-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT-363 package, integrating an N-channel (20 V, 540 mA, RDS(on) = 0.4 Ω @ VGS = 4.5 V) and P-channel (–20 V, –430 mA, RDS(on) = 0.7 Ω @ VGS = –4.5 V) device with ultra-low gate threshold voltage (±1.0 V), ESD-protected gates, and low input capacitance for compact load-switching and level-shifting circuits.

For engineers reviewing the DMC2004DWK-7 datasheet, DMC2004DWK-7 pinout, DMC2004DWK-7 application, or DMC2004DWK-7 equivalent, key selection criteria include dual-channel complementary operation, sub-1V VGS(th), thermal resistance of 500 °C/W, and compatibility with 1.8 V logic-level drive in space-constrained portable and battery-powered systems.

Technical Context

This dual MOSFET implements a matched complementary pair topology-Q1 (N-channel) and Q2 (P-channel)-with independent gate control, enabling bidirectional switching, half-bridge configurations, and rail-to-rail signal inversion without external bias networks. Its ±1.0 V gate threshold allows direct interfacing with 1.8 V and 2.5 V microcontrollers.

The device operates across –65 °C to +150 °C, supports fast switching via low Ciss (150 pF / 175 pF), low Coss (25 pF / 30 pF), and exhibits minimal leakage (<1 µA IDSS, ±1 µA IGSS), making it suitable for always-on power management nodes requiring low quiescent current.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS N-ch: 20 V; P-ch: –20 V - supports dual-rail operation up to ±20 V supply, compatible with USB-powered and Li-ion battery systems.
RDS(on) N-ch: 0.4 Ω @ 4.5 V; P-ch: 0.7 Ω @ –4.5 V - enables <100 mW conduction loss at 500 mA, critical for thermally constrained PCB layouts.
VGS(th) N-ch: 0.5–1.0 V; P-ch: –0.5 to –1.0 V - ensures reliable turn-on with 1.8 V GPIO, eliminating need for level shifters in modern MCU interfaces.
PD 250 mW @ TA = 25 °C - defines maximum continuous power dissipation on standard FR-4; derates linearly above 25 °C per 500 °C/W θJA.
Ciss N-ch: 150 pF; P-ch: 175 pF - limits gate drive current demand and propagation delay in high-frequency switching (e.g., PWM dimming, DC-DC sync rectification).
Tj/TSTG –65 to +150 °C - qualifies for extended industrial and automotive under-hood ambient conditions when mounted per JEDEC standards.

Pinout & Package

SOT-363 (SC-70-6) ultra-small surface-mount package: 2.2 mm × 1.35 mm × 0.95 mm, molded plastic body with UL 94V-0 rating, matte tin-plated Alloy 42 leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (S1) N-channel source Common source node for N-MOS; tied to ground or low-side reference in half-bridge or load-switch topologies.
2 (G1) N-channel gate Direct logic-level control input; ESD-protected, requires no external gate resistor for ≤1 MHz switching.
3 (D1) N-channel drain Switched output node; connects to load or high-side rail; shares internal die substrate with S2 in complementary pair layout.
4 (D2) P-channel drain Shared drain terminal with D1 - enables common-drain (source-follower) configuration or dual-switch parallel routing.
5 (G2) P-channel gate Inverted logic control input; driven low to turn on P-MOS; compatible with open-drain or push-pull drivers.
6 (S2) P-channel source Connected to positive supply rail in high-side switch applications; forms complementary output pair with S1.

Key Features

Feature Design Value
Complementary Pair Integration Single SOT-363 package contains matched N- and P-channel MOSFETs with symmetrical VGS(th) magnitude, reducing board area by >40% vs. discrete solutions.
Low-Voltage Gate Drive VGS(th) ≤ ±1.0 V enables full enhancement with 1.8 V I/O, eliminating level translators in wearables, IoT sensors, and Bluetooth modules.
ESD-Protected Gates HBM rating ≥2 kV (per JESD22-A114) - protects against handling damage during SMT assembly and field operation without external TVS.
Ultra-Low Leakage IDSS ≤ ±1 µA and IGSS ≤ ±1 µA at rated VDS/VGS - maintains standby current below 2 µA in always-on battery monitoring circuits.

Applications

USB Port Power Switching Li-ion Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream USB peripherals while enforcing overcurrent and reverse-polarity protection.

IC Role / Device Role / Timing Role: Dual-MOSFET load switch implementing back-to-back configuration to block reverse current and enable/discharge control.

Use Value: Sub-1V VGS(th) ensures full turn-on from 3.3 V USB VBUS; RDS(on) < 0.7 Ω limits voltage drop to <350 mV at 500 mA, preserving bus compliance.

Use Scenario: Isolating cell terminals during charging/discharging to prevent overvoltage, overdischarge, and short-circuit faults.

IC Role / Device Role / Timing Role: Complementary pair used as charge/discharge FETs in integrated protection IC auxiliary paths or discrete BMS designs.

Use Value: Matched RDS(on) and thermal tracking between N- and P-channels ensure balanced current sharing and consistent trip timing under fault conditions.

Low-Power Sensor Node Power Gating 1.8 V Logic-Level Signal Inversion

Use Scenario: Enabling/disabling power to MEMS accelerometers, temperature sensors, or RF transceivers during sleep cycles in wireless sensor networks.

IC Role / Device Role / Timing Role: High-side (P-ch) and low-side (N-ch) switch pair controlling VDD rail to subsystems with independent gate control.

Use Value: Total gate leakage <2 µA preserves battery life over multi-year deployments; SOT-363 footprint fits within 3 mm² PCB area budget.

Use Scenario: Converting 1.8 V CMOS logic outputs to inverted signals for clock gating, reset synchronization, or interface matching.

IC Role / Device Role / Timing Role: Complementary inverter stage with rail-to-rail swing, driven directly from MCU GPIO without pull-ups or level shifters.

Use Value: Propagation delay <15 ns (typ.) and low Ciss support >10 MHz toggle rates; matched thresholds minimize dead-time uncertainty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2004LSD-7 Same SOT-363 package but uses logic-level N/P pair with higher RDS(on) (N: 0.65 Ω, P: 1.2 Ω @ ±4.5 V); no ESD protection specified. Lower cost alternative where ESD immunity is not required and 30% higher conduction loss is acceptable. Select when BOM cost reduction outweighs gate robustness and thermal margin requirements.
DMN2004LFD-7 Discrete N-channel only (20 V, 540 mA, RDS(on) = 0.4 Ω), same package; lacks integrated P-channel and complementary pairing. Requires external P-MOS and gate control logic, increasing component count and layout complexity for bidirectional functions. Choose only if design mandates asymmetrical channel sizing or independent thermal management of each FET.

Compared with DMC2004LSD-7 and DMN2004LFD-7, the DMC2004DWK-7 uniquely delivers factory-matched complementary characteristics, ESD-hardened gates, and lowest combined RDS(on) in SOT-363-making it optimal for space- and reliability-critical dual-switch applications.

Availability

DMC2004DWK-7 is available at Aetrix Electronics and suitable for USB power management, Li-ion battery protection, low-power sensor node gating, and 1.8 V logic-level signal inversion requiring stable component supply and long-term production continuity.

Supply support for DMC2004DWK-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMC2004DWK-7 belongs to Diodes' logic-level complementary MOSFET product line, engineered specifically for miniaturized, low-voltage power switching in portable electronics and battery-operated systems.

FAQ

What is the maximum continuous drain current for each channel at 85°C?

The N-channel supports 390 mA and the P-channel supports –310 mA at TA = 85°C, per the Absolute Maximum Ratings table. These values reflect thermal derating from the 540 mA/–430 mA ratings at 25°C, based on the device's 500 °C/W junction-to-ambient thermal resistance and FR-4 PCB mounting conditions.

Can DMC2004DWK-7 be used in a back-to-back configuration for AC signal switching?

No - the internal schematic shows shared drain (D1/D2) connection, not isolated channels. The device is designed for DC load switching and level translation, not bidirectional AC blocking. For true back-to-back operation, two discrete MOSFETs with independent drain terminals are required.

Is the SOT-363 package lead-free and RoHS compliant?

Yes - DMC2004DWK-7 uses matte tin-plated Alloy 42 leadframes and is fully RoHS 3 compliant (2015/863/EU), halogen- and antimony-free ("Green"), with no purposely added lead and UL 94V-0 flammability rating per the Mechanical Data section.

Does this part meet AEC-Q101 qualification for automotive use?

No - the datasheet explicitly states that automotive-qualified versions require specific change control (AEC-Q101, PPAP, IATF 16949 manufacturing), and DMC2004DWK-7 is listed as a "NEW PRODUCT" without AEC designation. It is rated for industrial temperature range (–65 °C to +150 °C) but not qualified for automotive stress testing.

DMC2004DWK-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
540mA, 430mA
Rds On (Max) @ Id, Vgs:
550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 16V
Power - Max:
250mW
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMC2004DWK-7 FAQ

1.How can I place an order for DMC2004DWK-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2004DWK-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2004DWK-7 reliable?

The price and inventory of DMC2004DWK-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2004DWK-7 is usually 5 days.

3.What payment methods are accepted for DMC2004DWK-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2004DWK-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2004DWK-7?

DMC2004DWK-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2004DWK-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2004DWK-7?

For technical support, including DMC2004DWK-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2004DWK-7 requirements.

6.How does Aetrix verify that DMC2004DWK-7 is sourced from the original manufacturer or authorized distributors?

All DMC2004DWK-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2004DWK-7 meets industry standards.

7.What is the process for return or replacement of DMC2004DWK-7?

All DMC2004DWK-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2004DWK-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2004DWK-7 part is unused and in its original packaging.

Return procedure for DMC2004DWK-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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