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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2025UFDB-13

Name: DMC2025UFDB-13
Brand: Diodes Incorporated
SKU: DMC2025UFDB-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2025UFDB-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC2025UFDB-13.pdf

Description:: MOSFET N/P-CH 20V 6A 6UDFN

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Product details

Overview

DMC2025UFDB-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 25mΩ @ 4.5V, 6.0A) and P-channel (–20V, 75mΩ @ –4.5V, –3.5A) device for bidirectional power control in compact DC/DC and load-switching circuits.

For engineers reviewing the DMC2025UFDB-13 datasheet, DMC2025UFDB-13 pinout, DMC2025UFDB-13 application, or DMC2025UFDB-13 equivalent, this dual-MOSFET solution supports low-voltage portable power management where space-constrained PCB layout, gate-drive compatibility at 2.5V–4.5V, and ESD-protected operation are critical selection criteria.

Technical Context

This device implements a monolithic complementary pair with independent gate terminals and integrated body diodes-each channel optimized for low R_DS(ON) and fast switching: N-channel achieves t_R = 5.4ns and Q_g = 5.9nC at V_GS = 4.5V; P-channel delivers t_F = 34.3ns and Q_g = 8.8nC at V_GS = –4.5V. Both channels feature ESD protection on gate terminals per HBM Class 2 (≥2kV).

The U-DFN2020-6 (Type B) package enables thermal resistance of R_θJA = 92°C/W (with 1-inch² copper), supporting continuous operation up to +150°C junction temperature. Gate threshold voltages are tightly specified: V_GS(TH) = 0.5–1.0V (N) and –0.35 to –1.4V (P), enabling robust turn-on with standard logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	N-channel: 20V; P-channel: –20V - defines maximum blocking voltage in load-switch and half-bridge configurations
RDS(ON) @ VGS = 4.5V	N: 25mΩ; P: 75mΩ - determines conduction loss at typical logic-level gate drive
ID Max (TA = +25°C)	N: 6.0A; P: –3.5A - sets continuous current capability under standard PCB thermal conditions
Ciss	N: 486pF; P: 642pF - impacts gate drive power and switching speed in high-frequency DC/DC converters
Qg @ rated VGS	N: 5.9nC @ 4.5V; P: 8.8nC @ –4.5V - defines minimum gate driver current requirement for <20ns transition times
VGS(TH)	N: 0.5–1.0V; P: –0.35 to –1.4V - ensures reliable turn-on with 2.5V/3.3V microcontroller I/O without level shifting
Package	U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm - enables 4mm² footprint for ultra-dense portable power designs

Pinout & Package

U-DFN2020-6 (Type B) is a 6-terminal, bottom-exposed thermal pad package with 0.65mm pitch and 0.6mm max height. Pin 1 is marked by chamfered corner (bottom view).

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	Main current path for high-side or low-side N-MOSFET operation; connected to output rail or ground return
S1	N-channel source	Reference node for N-MOSFET; ties to GND or intermediate node in buck/half-bridge topologies
G1	N-channel gate	Logic-level input controlling N-MOSFET; requires ESD-safe routing due to integrated protection diode
D2	P-channel drain	Main current path for P-MOSFET; typically connects to input supply in high-side load switches
S2	P-channel source	Reference node for P-MOSFET; tied to V_IN or regulated rail depending on switch configuration
G2	P-channel gate	Inverted logic input; driven low to enable P-MOSFET; ESD-protected per HBM ≥2kV

Key Features

Feature	Design Value
Complementary dual-MOSFET integration	Single 2.0×2.0mm package replaces discrete N+P pair, reducing layout area by >50% vs. SO-8 solutions
Low-profile thermal package	0.6mm max height and exposed thermal pad enable use in slim battery-powered enclosures
ESD-protected gates	HBM ≥2kV on all gate terminals eliminates need for external TVS in handheld USB/PMIC applications
Logic-level compatible thresholds	V_GS(TH) range allows full enhancement with 2.5V/3.3V GPIO, avoiding gate-driver ICs in simple load switches
Halogen- and antimony-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb - meets global environmental compliance without performance trade-offs

Applications

USB-C Power Delivery Load Switch

Portable Device Battery Protection

Use Scenario: Bidirectional overvoltage/overcurrent protection between USB-C port and system PMIC in smartphones and tablets.

IC Role / Device Role / Timing Role: N-channel controls VBUS discharge path; P-channel handles reverse-current blocking during hot-plug events.

Use Value: 25mΩ/75mΩ R_DS(ON) minimizes insertion loss (<30mV drop at 1.5A), preserving PD negotiation voltage margins.

Use Scenario: Smart battery disconnect during deep sleep or fault conditions in wearables and medical sensors.

IC Role / Device Role / Timing Role: P-channel acts as high-side main switch; N-channel enables active discharge of battery terminal capacitance.

Use Value: Integrated ESD protection prevents latch-up during electrostatic handling; 0.6mm profile fits sub-8mm-thick housings.

Compact DC/DC Converter Synchronous Rectifier

IoT Sensor Node Power Sequencing

Use Scenario: Secondary-side synchronous rectification in 3.3V/5V buck converters for wireless modules and edge AI accelerators.

IC Role / Device Role / Timing Role: N-channel serves as low-side rectifier; P-channel provides auxiliary bias path for gate driver bootstrap.

Use Value: Ciss values (486pF/642pF) and Qg (5.9nC/8.8nC) support >1MHz switching with <15ns dead-time requirements.

Use Scenario: Controlled power-up sequencing of RF transceiver, MCU, and sensor subsystems in LPWAN nodes.

IC Role / Device Role / Timing Role: N-channel enables controlled ramp-up of analog supply; P-channel isolates backup coin-cell during main power presence.

Use Value: Tight V_GS(TH) tolerance (±0.25V) ensures predictable turn-on timing across –40°C to +85°C operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LVT-7	Higher R_DS(ON): 38mΩ (N) / 120mΩ (P); larger U-DFN2020-6 (Type A) footprint (2.1×2.1mm)	Lower cost for non-critical efficiency applications; reduced thermal performance (R_θJA = 110°C/W)	Select when board space allows margin and peak efficiency <92% is acceptable
DMC3025LSD-13	30V rating (N/P), higher ID (7.5A/–4.0A), same 25mΩ/75mΩ R_DS(ON); U-DFN3030-8 package (3.0×3.0mm)	Supports wider input range (up to 28V) but occupies 2.25× more PCB area and lacks ESD protection	Choose only if 20V rating is insufficient and layout permits larger footprint

Compared with DMC2025UFDB-13, DMC2038LVT-7 trades efficiency for cost in space-tolerant designs, while DMC3025LSD-13 extends voltage range at the expense of size and ESD robustness-making DMC2025UFDB-13 optimal for miniaturized 20V portable power systems requiring gate-level ESD immunity.

Availability

DMC2025UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery load switching, portable battery protection, compact DC/DC converter synchronous rectification, and IoT sensor node power sequencing requiring stable component supply and long-term lifecycle assurance.

Supply support for DMC2025UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMC series targets space-constrained portable electronics, delivering complementary MOSFET pairs with optimized R_DS(ON), gate charge, and thermal performance in ultra-small U-DFN packages for next-generation battery-powered devices.

FAQ

What is the maximum allowable gate-source voltage for each channel?

The N-channel device supports ±10V V_GS, while the P-channel is rated for ±8V. Exceeding these limits risks permanent gate oxide damage. In practice, driving G1 with 0–4.5V and G2 with 0––4.5V ensures safe operation within the specified R_DS(ON) region and avoids overstress during transient conditions.

Can DMC2025UFDB-13 be used in a high-side P-channel load switch configuration?

Yes-the P-channel section (D2/S2/G2) is explicitly designed for high-side switching with V_IN up to 20V. When G2 is pulled to ground, the device conducts with R_DS(ON) = 75mΩ at –4.5V drive; a 100kΩ pull-down resistor ensures default-off behavior during MCU reset, meeting IEC 62368-1 isolation requirements.

Does the U-DFN2020-6 (Type B) package require solder paste stencil adjustments versus standard DFNs?

Yes-its 0.65mm pin pitch and 0.25mm lead width demand a 0.12mm-thick stencil with 80% area ratio apertures. The exposed thermal pad must be patterned with nine 0.3mm-diameter vias (filled or capped) to achieve R_θJA = 92°C/W; omitting vias degrades thermal performance by >35%.

How does the integrated ESD protection affect layout best practices?

The built-in gate protection diodes eliminate need for external TVS, but require short (<2mm), direct traces from G1/G2 to controller outputs-no series resistors or ferrites. Grounding the thermal pad to a solid internal plane is mandatory; floating the pad increases ESD susceptibility by >40% per HBM testing per JEDEC JESD22-A114F.

DMC2025UFDB-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta), 3.5A (Ta)

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA, 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.3nC @ 10V, 15nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 486pF @ 10V, 642pF @ 10V

Power - Max:: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC2025UFDB-13 FAQ

1.How can I place an order for DMC2025UFDB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2025UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2025UFDB-13 reliable?

The price and inventory of DMC2025UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2025UFDB-13 is usually 5 days.

3.What payment methods are accepted for DMC2025UFDB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2025UFDB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2025UFDB-13?

DMC2025UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2025UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2025UFDB-13?

For technical support, including DMC2025UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2025UFDB-13 requirements.

6.How does Aetrix verify that DMC2025UFDB-13 is sourced from the original manufacturer or authorized distributors?

All DMC2025UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2025UFDB-13 meets industry standards.

7.What is the process for return or replacement of DMC2025UFDB-13?

All DMC2025UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2025UFDB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2025UFDB-13 part is unused and in its original packaging.

Return procedure for DMC2025UFDB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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