My Inquiry
My Account
Diodes Incorporated DMC2025UFDB-7
- Part No.:
- DMC2025UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC2025UFDB-7.pdf
- Description:
- MOSFET N/P-CH 20V 6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:867
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMC2025UFDB from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 25mΩ @ 4.5V, 6.0A) and P-channel (–20V, 75mΩ @ –4.5V, –3.5A) device for bidirectional load switching in space-constrained DC-DC and battery management circuits.
For engineers reviewing the DMC2025UFDB datasheet, DMC2025UFDB pinout, DMC2025UFDB application, or DMC2025UFDB equivalent, this dual MOSFET supports low-voltage portable power adaptors, USB-C power delivery path control, and high-efficiency synchronous rectification where compact footprint and matched thermal behavior are critical.
Technical Context
This dual MOSFET implements complementary channel pairing with independent gate terminals and shared source connections per channel-enabling half-bridge, load switch, and reverse-polarity protection topologies without external cross-coupling. Its ESD-protected gates (±10µA IGSS) and low RDS(ON) hysteresis across temperature ensure stable turn-on in battery-powered systems operating from –55°C to +150°C junction.
The integrated N- and P-channel devices share identical thermal resistance (RθJA = 92°C/W on 1-inch² copper), enabling balanced power dissipation in bidirectional current paths. Gate charge asymmetry (Qg = 5.9nC N-ch / 8.8nC P-ch at rated VGS) reflects optimized drive requirements for asymmetric duty-cycle applications like USB PD sink-side control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS (N/P) | 20V / –20V - Enables use in 5V–12V rail systems with 2× safety margin against transients. |
| RDS(ON) Max | 25mΩ @ 4.5V (N), 75mΩ @ –4.5V (P) - Delivers <125mW conduction loss at 2A load for both channels. |
| ID Continuous | 6.0A (N), –3.5A (P) - Supports ≥3A bidirectional load switching with derating per PCB layout. |
| Ciss | 486pF (N), 642pF (P) - Low input capacitance enables fast switching with standard GPIO-level drivers. |
| Package | U-DFN2020-6 (Type B), 2.0×2.0×0.6mm - 4mm² footprint fits 0402-class board area constraints. |
| ESD Protection | HBM ±2kV - Integrated gate protection eliminates need for external TVS in consumer-grade designs. |
| Thermal RθJA | 92°C/W (on 1″² copper) - Allows 1.4W continuous dissipation in compact layouts without forced air. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0mm × 2.0mm × 0.6mm body, NiPdAu-plated copper leadframe, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-Channel Drain | Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration. |
| G1 | N-Channel Gate | Independent control terminal; requires ≥0.5V threshold margin above system ground for full enhancement. |
| S1 | N-Channel Source | Common source node for N-MOSFET; tied to S2 for complementary operation or left floating for discrete use. |
| D2 | P-Channel Drain | Main current path for low-side P-MOSFET; connects to load in reverse-polarity protection or load switch. |
| G2 | P-Channel Gate | Independent control terminal; driven negative relative to S2 to enhance P-MOSFET. |
| S2 | P-Channel Source | Common source node for P-MOSFET; electrically tied to S1 internally per datasheet schematic. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single-package N+P MOSFET eliminates layout mismatch and thermal skew between channels in load-switch ICs. |
| Low Profile Height | 0.6mm max - Enables use under shields or in ultra-thin portable enclosures (e.g., Bluetooth earbuds, wearables). |
| Low Input Capacitance | Ciss = 486pF (N), 642pF (P) - Reduces gate drive power and enables >1MHz switching in buck-boost converters. |
| Lead-Free & Halogen-Free | RoHS 3 compliant, <900ppm Br/Cl, <1000ppm Sb - Meets IPC-1752A environmental reporting and automotive PPAP requirements. |
| ESD Protected Gate | HBM ±2kV rating - Eliminates need for external gate protection diodes in handheld device front-end circuitry. |
Applications
| USB-C Power Delivery Switching | Portable Power Adaptor Load Control |
|---|---|
|
Use Scenario: Bidirectional power path selection between USB-C port and internal battery in dual-role devices. IC Role / Device Role / Timing Role: Dual-channel load switch managing forward (source) and reverse (sink) power flow with independent gate control. Use Value: 25mΩ/75mΩ RDS(ON) minimizes voltage drop during 3A charging/discharging, preserving >96% efficiency at 5V. |
Use Scenario: Enable/disable output rails in compact wall adapters supporting multiple USB outputs. IC Role / Device Role / Timing Role: High-side N-MOSFET and low-side P-MOSFET configured as active OR-ing switch for redundant inputs. Use Value: 4mm² footprint allows integration into 12mm × 12mm adapter PCBs without sacrificing thermal margin. |
| Battery-Powered IoT Sensor Node | Reverse Polarity Protection Circuit |
|
Use Scenario: Controlled power gating of RF module, MCU, and sensor subsystems to extend battery life. IC Role / Device Role / Timing Role: Complementary pair used in low-quiescent-current enable circuit with <1µA off-state leakage. Use Value: IDSS ≤1µA (N) and ≤–1µA (P) ensures <2µA total system standby current, enabling multi-year coin-cell operation. |
Use Scenario: Protecting 3.3V/5V logic boards from accidental reverse connection of external power supplies. IC Role / Device Role / Timing Role: P-MOSFET (Q2) placed in series with input rail; N-MOSFET (Q1) drives gate via resistor-divider for automatic turn-on. Use Value: 75mΩ RDS(ON) limits reverse-protection voltage drop to <260mV at 3.5A, avoiding brownout in downstream regulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Higher RDS(ON): 38mΩ/120mΩ; larger U-DFN2030-6 package (2.0×3.0mm) | Lower current capability (5.0A/–2.8A); suited for cost-sensitive, lower-power designs | Select when thermal budget allows higher conduction loss and board area permits 2.0×3.0mm footprint. |
| SI6926ADQ-T1-GE3 | Asymmetric pairing: N-ch 20V/30mΩ + P-ch –20V/100mΩ; SO-8 package | Higher profile (1.75mm), higher Ciss (720pF/950pF); requires external gate resistors for EMI control | Choose for legacy SO-8 layouts or where through-hole rework compatibility is required over size reduction. |
Compared with DMC2025UFDB, DMC2038LSD-7 trades 50% higher RDS(ON) for lower unit cost in non-thermal-limited designs, while SI6926ADQ-T1-GE3 sacrifices 4× footprint area and 2.5× gate charge to retain SO-8 assembly infrastructure.
Availability
DMC2025UFDB is available at Aetrix Electronics and suitable for USB-C power delivery modules, portable power adaptors, and battery-powered IoT sensor nodes requiring stable component supply and long-term industrial lifecycle support.
Supply support for DMC2025UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.
The DMC series targets space-constrained power switching applications, with the DMC2025UFDB specifically engineered for bidirectional load control in portable electronics where footprint, thermal performance, and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating junction temperature for DMC2025UFDB?
The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Operation up to this limit is permitted with appropriate PCB copper area (1″² recommended) and ambient conditions ensuring RθJA ≤92°C/W. Thermal shutdown is not integrated; external monitoring is required for safety-critical systems.
Can DMC2025UFDB be used in a synchronous buck converter as high-side and low-side switches?
No - the DMC2025UFDB lacks bootstrap diode integration and its gate threshold voltages (0.5–1.0V N-ch, –0.35 to –1.4V P-ch) are incompatible with standard buck controller gate drive schemes. It is designed for DC load switching, not PWM power conversion. Use dedicated synchronous buck controllers with external discrete FETs instead.
Is the S1 and S2 pin internally connected?
Yes - the internal schematic shows S1 and S2 tied together, forming a common source node. This configuration enables complementary operation in load switch and reverse polarity protection circuits. For independent channel use, verify isolation with continuity testing; the datasheet confirms internal connection in the "Internal Schematic" diagram.
Does DMC2025UFDB meet AEC-Q101 for automotive use?
No - the datasheet explicitly states that automotive-qualified versions require direct contact with Diodes Incorporated or authorized representatives. Standard DMC2025UFDB-7 is not AEC-Q101 qualified; it lacks PPAP documentation, IATF 16949 manufacturing evidence, and extended temperature validation beyond –55°C to +150°C.
DMC2025UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 486pF @ 10V, 642pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC2025UFDB-7 FAQ
1.How can I place an order for DMC2025UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2025UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2025UFDB-7 reliable?
The price and inventory of DMC2025UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2025UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMC2025UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2025UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2025UFDB-7?
DMC2025UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2025UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2025UFDB-7?
For technical support, including DMC2025UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2025UFDB-7 requirements.
6.How does Aetrix verify that DMC2025UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMC2025UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2025UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMC2025UFDB-7?
All DMC2025UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2025UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2025UFDB-7 part is unused and in its original packaging.
Return procedure for DMC2025UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMC2025UFDB-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
