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Diodes Incorporated DMC2025UFDBQ-13
- Part No.:
- DMC2025UFDBQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC2025UFDBQ-13.pdf
- Description:
- MOSFET N/P-CH 20V 6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,352
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Product details
Overview
DMC2025UFDBQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 25mΩ @ 4.5V) and P-channel (-20V, 75mΩ @ -4.5V) device for bidirectional load switching. It delivers 6.0A continuous drain current (N-ch) and -3.5A (P-ch) at +25°C, with AEC-Q101 qualification and PPAP support for automotive power management functions including portable power adaptors and load switches.
For engineers reviewing the DMC2025UFDBQ-13 datasheet, DMC2025UFDBQ-13 pinout, DMC2025UFDBQ-13 application, or DMC2025UFDBQ-13 equivalent, this dual-channel MOSFET offers verified low on-resistance, ESD-protected gates, 0.6mm profile, and thermal performance validated under IATF 16949 manufacturing conditions - critical for space-constrained, high-reliability automotive and portable power designs.
Technical Context
This complementary pair operates with independent gate control: the N-channel device requires positive VGS (0.5–1.0V threshold), while the P-channel uses negative VGS (-0.35 to -1.4V threshold), enabling synchronous or complementary switching topologies. Both channels feature integrated gate protection diodes and share a common thermal path within the U-DFN2020-6 package.
Dynamic performance is defined by low input capacitance (Ciss = 486pF N-ch / 642pF P-ch), fast switching (tD(ON) = 3.4ns N-ch / 5.5ns P-ch), and controlled charge parameters (Qg = 5.9nC N-ch / 8.8nC P-ch at rated VGS), supporting efficient operation in DC-DC converters and load-switching circuits up to 1MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 20V (N-ch) / -20V (P-ch): Maximum blocking voltage before avalanche conduction begins in each channel. |
| RDS(ON) Max | 25mΩ @ VGS = 4.5V (N-ch), 75mΩ @ VGS = -4.5V (P-ch): On-resistance directly impacts conduction loss and thermal rise in load-switch applications. |
| ID Max (TA = +25°C) | 6.0A (N-ch), -3.5A (P-ch): Continuous current capability under standard PCB mounting conditions with 2oz copper. |
| Qg (Total Gate Charge) | 5.9nC (N-ch @ 4.5V), 8.8nC (P-ch @ -4.5V): Determines driver strength requirement and switching energy loss. |
| Thermal Resistance RθJA | 178°C/W (min pad), 92°C/W (1-inch copper plate): Defines junction-to-ambient temperature rise under steady-state power dissipation. |
| Package | U-DFN2020-6 (Type B), 2.0 × 2.0 × 0.6mm: Ultra-compact footprint (4mm²) suitable for dense automotive PCB layouts. |
| AEC-Q101 Qualified | Yes: Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm maximum height, exposed thermal pad (D2), NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | N-channel Drain | Main current path for N-MOSFET; connects to high-side load or power rail. |
| Pin 2 (S1) | N-channel Source | Reference node for N-MOSFET; ties to ground or return path in high-side switch configurations. |
| Pin 3 (G1) | N-channel Gate | Control input for N-MOSFET; requires ≥4.5V drive for full enhancement; ESD-protected. |
| Pin 4 (D2) | P-channel Drain | Main current path for P-MOSFET; typically connected to load output or intermediate node. |
| Pin 5 (S2) | P-channel Source | Reference node for P-MOSFET; connects to supply rail in low-side switch or common-source configuration. |
| Pin 6 (G2) | P-channel Gate | Control input for P-MOSFET; driven negative relative to S2; threshold range -0.35V to -1.4V. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single-package N+P MOSFET eliminates layout mismatch and timing skew between channels in half-bridge or load-switch designs. |
| Low On-Resistance at Low VGS | 35mΩ (N-ch @ 2.5V), 140mΩ (P-ch @ -2.5V): Enables robust operation with 3.3V logic-level gate drive in battery-powered systems. |
| ESD-Protected Gates | HBM >2kV (per JESD22-A114): Prevents gate oxide damage during board assembly and handling without external TVS. |
| Ultra-Low Profile | 0.6mm max height: Allows placement under connectors or beneath shields in slim automotive ECUs and portable adapters. |
| Green, Halogen-Free Construction | <900ppm Br/Cl, <1000ppm Sb, RoHS 3 compliant: Meets automotive OEM environmental requirements and end-of-life recycling mandates. |
Applications
| Automotive Load Switch | USB-C Power Delivery Adapter |
|---|---|
|
Use Scenario: Controlling power to infotainment modules or ADAS sensors with controlled inrush and reverse-current blocking. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as bidirectional power switch with independent gate control for sequencing and fault isolation. Use Value: AEC-Q101 qualification ensures operational stability across -40°C to +125°C ambient, while low RDS(ON) limits voltage drop to <150mV at 5A load. |
Use Scenario: Managing power path selection and overcurrent protection in compact USB-C PD wall adapters. IC Role / Device Role / Timing Role: N-channel handles high-current sourcing; P-channel enables reverse-current blocking during adapter disconnection. Use Value: 4mm² footprint reduces PCB area by 40% vs. discrete dual-SOT packages; low Ciss supports clean 1MHz switching in secondary-side regulation. |
| Industrial Portable Power Bank | Smartphone Fast-Charging Circuit |
|
Use Scenario: Enabling dual-battery switchover and system power gating in ruggedized field instruments. IC Role / Device Role / Timing Role: Complementary pair implements OR-ing function and hot-swap control with body-diode forward voltage <1.2V. Use Value: Integrated gate protection diodes eliminate need for external clamps; 0.6mm height allows stacking under battery connectors. |
Use Scenario: Regulating charging current and isolating battery from USB input during data transfer or fault conditions. IC Role / Device Role / Timing Role: N-MOSFET controls main charge path; P-MOSFET blocks reverse leakage when VBUS drops below battery voltage. Use Value: 75mΩ P-ch RDS(ON) limits reverse leakage to <10µA at 3.6V, preserving standby battery life over extended idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2035UFDBQ-13 | Higher RDS(ON): 35mΩ (N-ch) / 100mΩ (P-ch) at rated VGS; same package and AEC-Q101 rating. | Suitable for lower-current (<4A) automotive loads where thermal margin exceeds requirement. | Select when cost optimization is prioritized over conduction loss; verify thermal derating at 70°C ambient. |
| DMC3025LSD-13 | SO-8 package (5.0 × 6.0 mm); higher RDS(ON) (28mΩ/80mΩ); same voltage rating and AEC-Q101 qualification. | Preferred for legacy designs requiring through-hole or larger thermal mass; not suitable for ultra-dense layouts. | Choose only if board rework is impractical; U-DFN2020-6 offers 75% smaller footprint and superior thermal resistance per mm². |
Compared with DMC2025UFDBQ-13, DMC2035UFDBQ-13 trades 40% higher conduction loss for lower unit cost, while DMC3025LSD-13 sacrifices miniaturization for easier soldering and higher absolute power handling - making the DMC2025UFDBQ-13 optimal for new automotive and portable designs demanding size, efficiency, and qualification rigor.
Availability
DMC2025UFDBQ-13 is available at Aetrix Electronics and suitable for automotive load switching, USB-C power delivery adapters, and industrial portable power banks requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle continuity.
Supply support for DMC2025UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMC2025UFDBQ-13 belongs to Diodes' AEC-Q101-qualified U-DFN MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive power systems requiring precise gate control and robust transient immunity.
FAQ
What is the maximum allowable junction temperature for DMC2025UFDBQ-13?
The DMC2025UFDBQ-13 has a specified operating junction temperature range of -55°C to +150°C. Its safe operating area (SOA) curves confirm pulsed operation up to 150°C with appropriate derating, and thermal resistance values (RθJA = 92°C/W with 1-inch copper) enable sustained 6A N-channel current at +70°C ambient when properly heatsinked.
Can DMC2025UFDBQ-13 be used with 3.3V logic-level gate drive?
Yes - the N-channel device has a VGS(TH) of 0.5–1.0V and achieves 35mΩ RDS(ON) at VGS = 2.5V; the P-channel operates down to VGS = -2.5V with 140mΩ RDS(ON). This enables direct interface with 3.3V microcontrollers, though gate drive strength must exceed 1A peak to manage Qg = 5.9nC (N-ch) and 8.8nC (P-ch) within required switching times.
Is the thermal pad (D2) electrically isolated in U-DFN2020-6 Type B?
No - the exposed thermal pad (D2) is internally connected to the source terminals (S1 and S2) of both MOSFETs, as confirmed by the internal schematic and mechanical drawings. It must be soldered to a common source copper pour for optimal thermal performance and electrical reference; floating or grounded separately will compromise thermal and functional integrity.
Does DMC2025UFDBQ-13 support reverse-current blocking in battery backup circuits?
Yes - the integrated P-channel MOSFET provides active reverse-current blocking when its gate is held at the source potential (VGS = 0V), leveraging its body diode orientation. With VGS ≤ -0.35V, it fully enhances to block up to -2.5A at -20V, and its 140mΩ RDS(ON) at -2.5V ensures minimal voltage drop during forward conduction in OR-ing applications.
DMC2025UFDBQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 486pF @ 10V, 642pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC2025UFDBQ-13 FAQ
1.How can I place an order for DMC2025UFDBQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2025UFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2025UFDBQ-13 reliable?
The price and inventory of DMC2025UFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2025UFDBQ-13 is usually 5 days.
3.What payment methods are accepted for DMC2025UFDBQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2025UFDBQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2025UFDBQ-13?
DMC2025UFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2025UFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2025UFDBQ-13?
For technical support, including DMC2025UFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2025UFDBQ-13 requirements.
6.How does Aetrix verify that DMC2025UFDBQ-13 is sourced from the original manufacturer or authorized distributors?
All DMC2025UFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2025UFDBQ-13 meets industry standards.
7.What is the process for return or replacement of DMC2025UFDBQ-13?
All DMC2025UFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2025UFDBQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2025UFDBQ-13 part is unused and in its original packaging.
Return procedure for DMC2025UFDBQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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