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Diodes Incorporated DMC2025UFDBQ-7
- Part No.:
- DMC2025UFDBQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC2025UFDBQ-7.pdf
- Description:
- MOSFET N/P-CH 20V 6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,168
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Product details
Overview
DMC2025UFDBQ-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 25mΩ @ 4.5V, 6.0A) and P-channel (-20V, 75mΩ @ -4.5V, -3.5A) device for bidirectional power control. It delivers low on-resistance, low input capacitance (486pF/642pF), and AEC-Q101 qualification for automotive load switching and portable power adaptors.
For engineers reviewing the DMC2025UFDBQ-7 datasheet, DMC2025UFDBQ-7 pinout, DMC2025UFDBQ-7 application, or DMC2025UFDBQ-7 equivalent, this dual MOSFET supports space-constrained, thermally demanding designs requiring robust gate protection, IATF 16949-manufactured reliability, and precise ±10V/±8V gate drive compatibility.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode structures with ESD-protected gates and integrated body diodes. Its complementary configuration enables high-side and low-side switching in half-bridge or load-switch topologies without external level-shifting circuitry.
Thermal performance is defined by two distinct RθJA values (178°C/W on minimal PCB, 92°C/W on 1-inch copper plate), reflecting its dependence on layout-dependent heat spreading. The device operates across -55°C to +150°C junction temperature with gate threshold voltages of 0.5–1.0V (N-ch) and -0.35 to -1.4V (P-ch), enabling logic-level drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS (N/P) | 20V / -20V - Supports 12V automotive rail and 5V/3.3V logic-supplied systems with 20% headroom. |
| RDS(ON) @ VGS=±4.5V | 25mΩ / 75mΩ - Enables <100mW conduction loss at 2A (N-ch) and <300mW at 1A (P-ch) in compact layouts. |
| ID (Continuous, TA=25°C) | 6.0A / -3.5A - Sustains peak load currents in USB-C PD adapters and automotive body-control modules. |
| Ciss (N/P) | 486pF / 642pF - Reduces gate drive power and switching transition time in 1MHz-class DC-DC controllers. |
| Qg @ VGS=±4.5V | 5.9nC / 8.8nC - Allows fast turn-on/off with standard 1–6Ω gate resistors, minimizing switching losses. |
| Package | U-DFN2020-6 (Type B), 2.0×2.0×0.6mm - Fits 4mm² board area; requires NiPdAu-plated pads per MIL-STD-202. |
| AEC-Q101 Qualified | Yes - Validated for automotive use with PPAP support and IATF 16949 manufacturing traceability. |
Pinout & Package
U-DFN2020-6 (Type B) package with exposed thermal pad (no electrical connection), 0.6mm max height, and NiPdAu-plated terminals. Pin 1 identified by marking "D1" on bottom view.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main current path for high-side N-MOSFET; connects to input rail in load switch applications. |
| S1 | N-channel source | Reference node for N-MOSFET; tied to ground or output node depending on topology. |
| G1 | N-channel gate | Logic-level control input; ESD-protected, requires ≤10V drive per datasheet absolute maximum. |
| D2 | P-channel drain | Main current path for low-side P-MOSFET; connects to output/load in high-side switch configurations. |
| S2 | P-channel source | Reference node for P-MOSFET; typically tied to input rail for high-side operation. |
| G2 | P-channel gate | Inverted logic control input; driven negative relative to S2; ±8V absolute max rating. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-channel integration | Eliminates discrete pairing mismatch; ensures matched thermal and switching behavior between N- and P-MOSFETs. |
| ESD-protected gate structure | Withstands >2kV HBM per JESD22-A114; reduces need for external TVS in automotive ECU interfaces. |
| Low-profile 0.6mm height | Enables ultra-thin power modules in portable medical devices and slim automotive infotainment displays. |
| Lead-free, halogen-free, antimony-free | Fully RoHS 3 (2015/863/EU) compliant; bromine + chlorine <1500ppm; suitable for EU and China RoHS markets. |
| Moisture sensitivity Level 1 | Zero bake requirement before reflow; simplifies SMT line handling and eliminates moisture-related popcorning. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Adapter |
|---|---|
|
Use Scenario: Controlling door lock actuators and interior lighting via 12V supply with reverse-polarity protection. IC Role / Device Role / Timing Role: Dual MOSFET acts as protected high-side switch (N-ch) and reverse-current blocking element (P-ch) in single-package load management. Use Value: AEC-Q101 qualification and -55°C to +150°C operation ensure reliability across vehicle life cycles without derating. |
Use Scenario: Implementing input overvoltage and reverse-current protection in compact 65W USB-C PD chargers. IC Role / Device Role / Timing Role: N-ch handles primary 20V input switching; P-ch provides active reverse-blocking during adapter disconnection. Use Value: 25mΩ/75mΩ RDS(ON) minimizes conduction loss in thermally constrained 30mm × 30mm PCB footprints. |
| Industrial Portable Power Bank | Smart Home Hub Power Sequencing |
|
Use Scenario: Managing battery-to-USB output paths while preventing backfeed during charging cycles. IC Role / Device Role / Timing Role: Complementary pair enables bidirectional load switch with independent gate control for sequencing and fault isolation. Use Value: Low Qg (5.9nC/8.8nC) allows microcontroller-driven soft-start and rapid fault shutdown under firmware control. |
Use Scenario: Enabling controlled power-up of Wi-Fi SoC, sensor array, and Zigbee radio in battery-powered smart home gateways. IC Role / Device Role / Timing Role: Dual MOSFET serves as programmable power rail switch with independent enable signals for each subsystem. Use Value: 4mm² footprint and 0.6mm height allow integration into 8-layer HDI boards with stacked power domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Higher RDS(ON): 38mΩ/-100mΩ @ ±4.5V; larger U-DFN2030-6 package (2.0×3.0mm). | Lower current capability (5.0A/-2.8A); suited for cost-sensitive non-automotive consumer power rails. | Select when thermal margin exceeds 25°C and AEC-Q101 is not required. |
| SI6926ADQ-T1-GE3 | Same 20V rating but asymmetric channel sizing: 6.5A N-ch / -4.0A P-ch; higher Ciss (560pF/720pF). | Optimized for higher P-ch current in always-on auxiliary rails; lacks AEC-Q101 certification. | Prefer for industrial IoT gateways needing stronger P-ch sourcing without automotive compliance. |
Compared with DMC2025UFDBQ-7, DMC2038LSD-7 trades lower cost for reduced efficiency and larger footprint, while SI6926ADQ-T1-GE3 offers higher P-ch current at the expense of gate charge and automotive qualification-making the DMC2025UFDBQ-7 optimal for space- and reliability-critical AEC-Q101 designs.
Availability
DMC2025UFDBQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery adapters, and industrial portable power banks requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.
Supply support for DMC2025UFDBQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.
The DMC2025UFDBQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability load switching and power distribution in harsh-environment electronic control units.
FAQ
What is the maximum allowable gate-source voltage for the N-channel and P-channel elements?
The N-channel MOSFET has a ±10V absolute maximum VGS, while the P-channel is rated for ±8V. Exceeding these limits risks permanent gate oxide damage. Designers must ensure drive circuitry respects both ratings-especially critical when sharing gate drivers across complementary channels.
Can DMC2025UFDBQ-7 be used in a synchronous buck converter as high-side and low-side switches?
No-it is not optimized for synchronous rectification. The P-channel's 75mΩ RDS(ON) and higher Qg (8.8nC) result in excessive conduction and switching losses compared to dedicated low-RDS(ON) N-channel pairs. It is intended for load switching, not PWM power conversion.
Is the thermal pad on the U-DFN2020-6 package electrically connected?
No-the exposed thermal pad is non-functional and must be left floating or grounded solely for thermal conduction. Electrical connection would short internal die potentials. PCB layout must follow Diodes' recommended 0.65mm × 2.3mm solder mask opening and thermal via pattern.
Does the AEC-Q101 qualification cover both N-channel and P-channel devices in the same package?
Yes-the entire DMC2025UFDBQ-7 assembly underwent full AEC-Q101 stress testing including HTGB, HTRB, and TC1000 cycles. Qualification applies to the monolithic dual-die construction, not individual dies, ensuring matched reliability across both channels under automotive thermal and vibration profiles.
DMC2025UFDBQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 486pF @ 10V, 642pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC2025UFDBQ-7 FAQ
1.How can I place an order for DMC2025UFDBQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2025UFDBQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2025UFDBQ-7 reliable?
The price and inventory of DMC2025UFDBQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2025UFDBQ-7 is usually 5 days.
3.What payment methods are accepted for DMC2025UFDBQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2025UFDBQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2025UFDBQ-7?
DMC2025UFDBQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2025UFDBQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2025UFDBQ-7?
For technical support, including DMC2025UFDBQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2025UFDBQ-7 requirements.
6.How does Aetrix verify that DMC2025UFDBQ-7 is sourced from the original manufacturer or authorized distributors?
All DMC2025UFDBQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2025UFDBQ-7 meets industry standards.
7.What is the process for return or replacement of DMC2025UFDBQ-7?
All DMC2025UFDBQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2025UFDBQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2025UFDBQ-7 part is unused and in its original packaging.
Return procedure for DMC2025UFDBQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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