Diodes Incorporated DMC2038LVT-7

Overview

DMC2038LVT from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 35mΩ @ 4.5V) and P-channel (–20V, 74mΩ @ –4.5V) device for bidirectional power control. It delivers 4.5A/–3.1A continuous drain current at +25°C and supports high-efficiency DC-DC converters, motor drivers, and backlighting circuits requiring compact dual-channel switching.

For engineers reviewing the DMC2038LVT datasheet, DMC2038LVT pinout, DMC2038LVT application, or DMC2038LVT equivalent, this device is selected for space-constrained power stages needing matched complementary R_DS(ON), low gate charge (5.7nC/7nC), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET implements independent N- and P-channel channels with separate gate terminals, enabling half-bridge, H-bridge, and load-switch topologies without external pairing. Each channel features low threshold voltage (0.4–1.0V for Q1; –0.4 to –1.0V for Q2) and fast switching (t_F ≤ 16ns for Q1, ≤ 23ns for Q2), optimized for synchronous rectification and PWM-driven loads.

Thermal performance is defined by R_θJA = 114°C/W (with 1-inch² copper) and junction temperature range of –55°C to +150°C. The device uses matte tin–annealed copper leadframe and green molding compound compliant with RoHS 3, halogen-free, and antimony-free standards.

Key Specifications

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9 × 2.8 × 0.8mm) with exposed thermal pad, rated for 1.1W dissipation on 1-inch² copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LVT, DMC2053UVT trades conduction loss for reduced gate charge-ideal for light-load efficiency-while Si3588DV delivers lower R_DS(ON) at the expense of gate drive power and automotive qualification, requiring careful thermal and qualification review.

Availability

DMC2038LVT is available at Aetrix Electronics and suitable for automotive body electronics, portable DC-DC converters, and LED backlighting systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for DMC2038LVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, serving automotive, industrial, and consumer markets.

The DMC2038LVT belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for space-constrained, high-reliability power management in automotive and industrial environments where thermal robustness and parametric matching are critical.

FAQ

What is the maximum safe operating voltage for each channel of the DMC2038LVT?

The N-channel device has a 20V drain-source breakdown voltage (BVDSS), and the P-channel device has a –20V rating. These values represent absolute maximum ratings-not recommended operating points. For reliable long-term operation, design with ≤16V for the N-channel and ≥–16V for the P-channel to maintain 20% margin against transients and temperature drift.

Can the DMC2038LVT be used in a high-side load switch configuration without a gate driver?

Yes-the P-channel section (Q2) can operate directly from a microcontroller GPIO in high-side switch mode when the source is tied to V_IN and the gate is pulled low to turn on. However, full enhancement at low V_GS (e.g., –1.8V) yields higher R_DS(ON) (168mΩ); for optimal efficiency, use ≥–4.5V gate drive or add a simple charge-pump circuit.

How does the thermal performance of the DMC2038LVT compare between FR-4 board and enhanced copper layout?

On standard FR-4 with minimum pad layout, R_θJA is 168°C/W (PD = 0.8W at +25°C). With a 1-inch² copper pour, R_θJA improves to 114°C/W and PD rises to 1.1W. This 36% thermal resistance reduction allows ~300mW more power dissipation before reaching 150°C junction temperature under identical ambient conditions.

Is the DMC2038LVT pin-compatible with other TSOT26 dual MOSFETs like the Si3588DV?

Yes-DMC2038LVT uses the standard TSOT26 pinout (D1-S1-G1-G2-S2-D2), matching Si3588DV and DMC2053UVT. Mechanical compatibility is confirmed per JEDEC MO-252. However, electrical characteristics differ significantly: R_DS(ON), Q_g, and AEC-Q101 status require schematic and layout verification before substitution.