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Diodes Incorporated DMC2041UFDB-13
- Part No.:
- DMC2041UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC2041UFDB-13.pdf
- Description:
- MOSFET N/P-CH 20V 4.7A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,395
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Product details
Overview
DMC2041UFDB-13 from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 40mΩ @ 4.5V, 4.7A) and P-channel (–20V, 90mΩ @ –4.5V, –3.2A) device for bidirectional power control. It delivers low RDS(ON), fast switching (tF = 2.6ns N-ch / 20.4ns P-ch), and ESD-protected gates, targeting compact load-switching in portable power adaptors and dual-rail power management.
For engineers reviewing the DMC2041UFDB-13 datasheet, DMC2041UFDB-13 pinout, DMC2041UFDB-13 application, or DMC2041UFDB-13 equivalent, key selection criteria include verified complementary channel matching, thermal resistance (RθJA = 92°C/W steady-state), gate charge asymmetry (Qg = 8nC N-ch / 11nC P-ch), and body diode recovery performance (tRR = 6.6ns / 23.6ns).
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors with separate gate, source, and drain terminals-no internal connection between channels. Each channel features gate protection diodes and is characterized across temperature (–55°C to +150°C) with guaranteed RDS(ON) at VGS = ±2.5V and ±4.5V.
Dynamic parameters are specified under standardized conditions: Ciss = 713pF (N-ch) / 881pF (P-ch) at VDS = ±10V; Crss = 68pF / 67pF; total gate charge Qg scales with |VGS| (15nC N-ch at 8V, 18nC P-ch at –8V). Safe operating area (SOA) is defined for single-pulse durations down to 100μs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V (N-ch), –20V (P-ch): Maximum blocking voltage before avalanche conduction begins. |
| RDS(ON) @ VGS = ±4.5V | 40mΩ (N-ch), 90mΩ (P-ch): On-resistance defining conduction loss at standard logic-level drive. |
| ID Continuous @ TA = 25°C | 4.7A (N-ch), –3.2A (P-ch): Max DC current limited by package thermal resistance and silicon area. |
| Qg Total Gate Charge | 8nC (N-ch), 11nC (P-ch): Gate drive energy required per switching cycle; impacts driver sizing and switching loss. |
| tRR Body Diode Recovery | 6.6ns (N-ch), 23.6ns (P-ch): Reverse-recovery time affecting shoot-through risk and efficiency in synchronous rectification. |
| RθJA Junction-to-Ambient | 92°C/W (steady-state): Thermal resistance on 1"×1" FR-4 PCB; determines max power dissipation at given ambient temperature. |
| Ciss | 713pF (N-ch), 881pF (P-ch): Input capacitance governing gate drive current demand and Miller effect. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | N-channel drain | Main current path for high-side or low-side N-MOSFET operation; electrically isolated from P-channel structure. |
| Pin 2 (S1) | N-channel source | Reference node for N-channel gate drive; connects to ground or low-side rail in typical load-switch configurations. |
| Pin 3 (G1) | N-channel gate | Control terminal requiring ≥0.35V threshold; protected by integrated gate diode D1 against ESD. |
| Pin 4 (D2) | P-channel drain | Main current path for P-MOSFET; used as high-side switch input when S2 is tied to VIN. |
| Pin 5 (S2) | P-channel source | Reference node for P-channel gate drive; typically connected to positive supply in high-side switch applications. |
| Pin 6 (G2) | P-channel gate | Control terminal requiring ≤–0.35V threshold; protected by integrated gate diode D2 against ESD. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Matched 20V N- and P-channel devices in one die; enables space-efficient half-bridge or dual-rail load switches without discrete layout mismatch. |
| Low-profile U-DFN2020-6 | 0.6mm max height; supports ultra-thin portable designs where Z-height is constrained, such as USB-C PD adapters and wearables. |
| ESD-protected gates | Integrated gate protection diodes (D1/D2); eliminates need for external TVS on gate lines in consumer-grade applications. |
| Lead-free & halogen-free | RoHS 3 compliant with <900ppm Br/Cl and <1000ppm Sb; satisfies environmental requirements for global consumer electronics shipments. |
| Low input capacitance | Ciss = 713pF (N-ch) / 881pF (P-ch); reduces gate drive power and improves switching speed versus larger-footprint alternatives. |
Applications
| USB-C Power Delivery Adaptor | Smartphone Battery Protection Circuit |
|---|---|
|
Use Scenario: Bidirectional power path control between USB-C port and battery during charging/discharging cycles. IC Role / Device Role / Timing Role: N-channel handles discharge path (source-to-battery), P-channel manages charge path (source-to-VBUS); independent gate control enables precise sequencing. Use Value: 40mΩ/90mΩ RDS(ON) minimizes voltage drop across both paths, preserving system efficiency within tight 5V/9V/15V PD profiles. |
Use Scenario: Overvoltage and reverse-current protection between battery pack and system PMIC. IC Role / Device Role / Timing Role: P-channel acts as high-side disconnect switch; N-channel provides reverse-current blocking via body diode orientation. Use Value: Fast tF = 2.6ns (N-ch) ensures rapid shutdown during fault detection, while low Qg enables microcontroller-driven protection without dedicated gate drivers. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Rail |
|
Use Scenario: Dual-rail power switching for transmitter coil driver ICs requiring separate 3.3V logic and 12V power domains. IC Role / Device Role / Timing Role: N-channel controls 3.3V domain enable; P-channel controls 12V domain enable; independent timing prevents cross-conduction. Use Value: Matched thermal characteristics (RθJA = 92°C/W both channels) ensure balanced thermal stress during burst-mode operation. |
Use Scenario: Low-power always-on sensor subsystem with configurable power domains for MCU, RF, and analog front-end. IC Role / Device Role / Timing Role: N-channel isolates MCU core rail; P-channel isolates RF transceiver rail; gate thresholds allow direct GPIO control. Use Value: 0.35V/–0.35V VGS(TH) enables reliable turn-on from 1.8V I/O, supporting ultra-low-voltage industrial IoT platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038UFDB-7 | Lower RDS(ON): 23mΩ (N-ch) / 59mΩ (P-ch) @ ±4.5V; higher Qg (10nC / 14nC); same U-DFN2020-6 package. | Better conduction efficiency but higher gate drive demand; suited for thermally constrained, low-duty-cycle loads. | Select when RDS(ON) dominates system loss budget and gate drive capability permits higher Qg. |
| SI3588DV-T1-GE3 | Higher voltage rating: ±30V; higher RDS(ON): 60mΩ (N-ch) / 110mΩ (P-ch); SO-8 package (larger footprint, lower thermal performance). | Supports wider input ranges (e.g., 24V industrial rails); less suitable for space-constrained portable designs. | Select when system requires >20V blocking margin or legacy SO-8 board compatibility is mandatory. |
Compared with DMC2041UFDB-13, DMC2038UFDB-7 trades higher gate charge for lower conduction loss, while SI3588DV-T1-GE3 sacrifices size and thermal efficiency for extended voltage range and through-hole compatibility.
Availability
DMC2041UFDB-13 is available at Aetrix Electronics and suitable for USB-C power delivery adaptors, smartphone battery protection circuits, wireless charging transmitters, and industrial sensor node power rails requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMC2041UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
The DMC2041UFDB belongs to Diodes' U-DFN complementary MOSFET product line, engineered for space-constrained, high-efficiency power switching in portable and battery-powered systems.
FAQ
What is the maximum junction temperature for continuous operation?
The DMC2041UFDB-13 has a rated junction temperature range of –55°C to +150°C. For continuous operation, thermal design must ensure junction temperature remains ≤+150°C under worst-case ambient and power dissipation conditions, using the specified RθJA = 92°C/W on a 1"×1" FR-4 board with 2oz copper.
Can the N-channel and P-channel be driven simultaneously without shoot-through risk?
No-simultaneous gate drive is not recommended. The device lacks internal dead-time control or cross-conduction prevention. External gate timing must enforce strict non-overlap between N- and P-channel activation, especially in half-bridge topologies, due to differing tD(ON)/tD(OFF) (3.6ns/16.0ns vs. 5.0ns/29.7ns).
Is the body diode of the P-channel suitable for reverse-current blocking in battery applications?
Yes-the P-channel body diode conducts from source to drain (S→D), enabling reverse-current blocking when S2 is connected to VBAT and D2 to load. Its VSD = –0.65V (typ) at –3.0A ensures low forward loss, and tRR = 23.6ns is acceptable for moderate-frequency protection switching.
Does the U-DFN2020-6 (Type B) package require special soldering profile considerations?
Yes-due to its exposed thermal pad and fine pitch (0.65mm), the U-DFN2020-6 (Type B) requires controlled reflow with peak temperature ≤260°C, ramp rate ≤3°C/s, and dwell time at peak ≤60 seconds. Diodes' recommended pad layout (X2 = 1.65mm, Y2 = 2.30mm) must be followed to ensure mechanical reliability and thermal performance.
DMC2041UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A, 3.2A
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 713pF @ 10V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC2041UFDB-13 FAQ
1.How can I place an order for DMC2041UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2041UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2041UFDB-13 reliable?
The price and inventory of DMC2041UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2041UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMC2041UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2041UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2041UFDB-13?
DMC2041UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2041UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2041UFDB-13?
For technical support, including DMC2041UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2041UFDB-13 requirements.
6.How does Aetrix verify that DMC2041UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMC2041UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2041UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMC2041UFDB-13?
All DMC2041UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2041UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2041UFDB-13 part is unused and in its original packaging.
Return procedure for DMC2041UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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