Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC2041UFDB-7

Part No.:
DMC2041UFDB-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMC2041UFDB-7.pdf
Description:
MOSFET N/P-CH 20V 4.7A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,539

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC2041UFDB from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 40mΩ @ 4.5V, 4.7A) and P-channel (–20V, 90mΩ @ –4.5V, –3.2A) device for bidirectional power control. It delivers low RDS(ON), ESD-protected gates, and 0.6mm profile-enabling compact load switching in portable power adaptors and dual-rail power management circuits.

For engineers reviewing the DMC2041UFDB datasheet, DMC2041UFDB pinout, DMC2041UFDB application, or DMC2041UFDB equivalent, this dual-MOSFET supports high-efficiency synchronous rectification, battery protection, and USB-C power path control where space-constrained board layout and gate-drive compatibility with 2.5V–4.5V logic are critical selection criteria.

Technical Context

This dual MOSFET integrates independent N- and P-channel devices sharing no internal connection beyond common thermal substrate-each with discrete gate terminals, source terminals, and drain terminals. The N-channel exhibits VGS(TH) of 0.35–1.4V and 713pF Ciss; the P-channel has VGS(TH) of –0.35 to –1.4V and 881pF Ciss, enabling matched low-voltage drive capability across both polarities.

Thermal performance is defined by RθJA = 92°C/W (steady-state) on 1"×1" FR-4 with 2oz copper, and RθJC = 30°C/W. Safe operating area (SOA) is characterized for single-pulse durations down to 100μs, supporting transient current handling up to 30A (N-ch) and –18A (P-ch) at VDS = 10V/–10V.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS N-ch: 20V; P-ch: –20V - supports dual-rail 3.3V/5V systems with 2× margin against transients
RDS(ON) @ VGS = ±4.5V N-ch: 40mΩ; P-ch: 90mΩ - enables ≤100mW conduction loss at 2A load per channel
ID (TA = +25°C) N-ch: 4.7A; P-ch: –3.2A - sufficient for 10W load switches and USB PD 3.0 power path control
Ciss N-ch: 713pF; P-ch: 881pF - low input capacitance reduces gate drive power and speeds switching
Qg @ VGS = ±4.5V N-ch: 8nC; P-ch: 11nC - enables efficient 1MHz PWM operation with <1.5V logic-level drivers
tR/tF N-ch: 15.9ns/2.6ns; P-ch: 9.5ns/20.4ns - asymmetric rise/fall supports optimized dead-time control
TJ Range –55°C to +150°C - qualified for industrial and extended-temperature portable electronics

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, lead-free, halogen-free, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D1) N-channel drain High-side switch node for N-ch; electrically isolated from P-ch drain
Pin 2 (S1) N-channel source Reference node for N-ch gate drive; connects to ground or low-side rail
Pin 3 (G1) N-channel gate Logic-level input; ESD-protected; requires 0.35–1.4V threshold turn-on
Pin 4 (D2) P-channel drain High-side switch node for P-ch; isolated from N-ch drain
Pin 5 (S2) P-channel source Reference node for P-ch gate drive; connects to VCC or high-side rail
Pin 6 (G2) P-channel gate Logic-level input; ESD-protected; requires –0.35 to –1.4V threshold turn-on

Key Features

Feature Design Value
Complementary dual-channel integration Single 2.0×2.0mm footprint replaces two discrete MOSFETs, reducing PCB area by >40% vs. SO-8 solutions
Low-profile 0.6mm height Enables ultra-thin designs in smartphones, wearables, and USB-C accessories where Z-height is constrained
ESD-protected gates (HBM >2kV) Eliminates need for external gate protection diodes in handheld and field-deployable equipment
Lead-free & "Green" construction Meets RoHS 3, J-STD-020 Level 1, and halogen/antimony limits (<900ppm Br/Cl, <1000ppm Sb)
Optimized for 2.5V–4.5V logic drive Guaranteed RDS(ON) at VGS = ±2.5V enables direct interface with modern MCU GPIOs and PMICs

Applications

USB-C Power Path Control Battery Protection Circuit

Use Scenario: Bidirectional power routing between USB-C port and system battery during charge/discharge cycles.

IC Role / Device Role / Timing Role: N-channel controls VBUS-to-battery charging path; P-channel controls battery-to-VBUS boost mode.

Use Value: 40mΩ/90mΩ RDS(ON) minimizes voltage drop and heat generation at 3A–5A currents, extending battery runtime and thermal margin.

Use Scenario: Overcurrent and reverse-polarity protection in single-cell Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: N-channel acts as low-side discharge switch; P-channel serves as high-side charge FET with integrated body diode reverse-blocking.

Use Value: Matched VGS(TH) thresholds and fast tF (20.4ns) enable precise current-limit response within 100ns of fault detection.

Portable Power Adaptor Load Switch Dual-Rail Voltage Regulator Sequencing

Use Scenario: Inrush-limited 5V/3.3V output switching in wall adapters and wireless charging base stations.

IC Role / Device Role / Timing Role: N-channel switches main output rail; P-channel controls auxiliary bias rail sequencing.

Use Value: Low Ciss (713pF/881pF) and Qg (8nC/11nC) allow clean 100kHz–1MHz soft-start without gate driver ICs.

Use Scenario: Independent enable control of 1.2V core and 3.3V I/O rails in FPGA or SoC power domains.

IC Role / Device Role / Timing Role: N-channel enables low-voltage rail; P-channel enables high-voltage rail with independent timing via separate gate signals.

Use Value: Independent gate terminals permit staggered turn-on (e.g., 100μs delay) to meet JEDEC JEP150 sequencing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038UFDB-7 N-ch RDS(ON) = 28mΩ @ 4.5V; P-ch = 65mΩ @ –4.5V - lower conduction loss but higher Ciss (920pF/1050pF) Better for continuous 5A loads; less suitable for >500kHz switching due to higher gate charge Select when thermal budget is tighter than switching frequency requirement
SIZ250DT-T1-GE3 Same U-DFN2020-6 package; N-ch RDS(ON) = 32mΩ @ 4.5V; P-ch = 75mΩ @ –4.5V; Qg = 7.5nC/10.5nC Higher VDSS (30V/–30V); wider SOA - better for 12V input adaptors with surge immunity needs Select when system input voltage exceeds 20V or surge rating >±30V is required

Compared with DMC2041UFDB, DMC2038UFDB offers lower RDS(ON) at cost of higher switching losses, while SIZ250DT provides higher voltage headroom and broader SOA-making DMC2041UFDB optimal for space-constrained 20V-class portable power where balanced conduction/switching efficiency is prioritized.

Availability

DMC2041UFDB is available at Aetrix Electronics and suitable for USB-C power path control, battery protection circuits, and portable power adaptor load switching requiring stable component supply and full RoHS compliance.

Supply support for DMC2041UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMC2041UFDB belongs to Diodes' U-DFN Dual-MOSFET product line, engineered specifically for miniaturized, high-efficiency power-switching in portable and battery-powered electronics where footprint, thermal performance, and logic-level drive compatibility are critical.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C, the N-channel supports 3.8A and the P-channel supports –2.5A under steady-state conditions. These values reflect derating from the +25°C ratings (4.7A and –3.2A) due to thermal resistance limitations and are validated per JEDEC test board conditions (1"×1" FR-4, 2oz copper).

Does DMC2041UFDB include integrated gate protection diodes?

Yes-the internal schematic shows discrete ESD protection diodes (D1, D2) connected between each gate and source terminal. These provide HBM ESD robustness exceeding 2kV and eliminate the need for external gate clamp components in most consumer and industrial applications.

Can the N-channel and P-channel be operated simultaneously in a synchronous buck configuration?

No-DMC2041UFDB is not designed for synchronous rectification in a single-phase buck converter because its N- and P-channel drains are unconnected and lack shared source/drain nodes required for half-bridge topology. It supports independent load switching or complementary high-/low-side control only.

What is the recommended PCB pad layout for U-DFN2020-6 (Type B)?

The official Diodes pad layout specifies X1 = 0.600mm, Y1 = 1.000mm, G1 = 0.450mm, and thermal pad dimensions of X2 = 1.650mm × Y2 = 2.300mm. A 0.150mm solder mask opening around each terminal and 0.225mm stencil aperture thickness ensure reliable reflow and thermal transfer to the PCB ground plane.

DMC2041UFDB-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.7A, 3.2A
Rds On (Max) @ Id, Vgs:
40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:
713pF @ 10V
Power - Max:
1.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DMC2041UFDB-7 FAQ

1.How can I place an order for DMC2041UFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2041UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2041UFDB-7 reliable?

The price and inventory of DMC2041UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2041UFDB-7 is usually 5 days.

3.What payment methods are accepted for DMC2041UFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2041UFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2041UFDB-7?

DMC2041UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2041UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2041UFDB-7?

For technical support, including DMC2041UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2041UFDB-7 requirements.

6.How does Aetrix verify that DMC2041UFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMC2041UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2041UFDB-7 meets industry standards.

7.What is the process for return or replacement of DMC2041UFDB-7?

All DMC2041UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2041UFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2041UFDB-7 part is unused and in its original packaging.

Return procedure for DMC2041UFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC2041UFDB-7 Tags

  • DMC2041UFDB-7
  • DMC2041UFDB-7 PDF
  • DMC2041UFDB-7 Datasheet
  • DMC2041UFDB-7 Specifications
  • DMC2041UFDB-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC2041UFDB-7
  • Buy DMC2041UFDB-7
  • DMC2041UFDB-7 Price
  • DMC2041UFDB-7 Distributor
  • DMC2041UFDB-7 Supplier
  • DMC2041UFDB-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER