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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2053UFDB-7

Name: DMC2053UFDB-7
Brand: Diodes Incorporated
SKU: DMC2053UFDB-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2053UFDB-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC2053UFDB-7.pdf

Description:: MOSFET N/P-CH 20V 4.6A 6UDFN

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Product details

Overview

DMC2053UFDB-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 35mΩ @ 4.5V, 4.6A) and P-channel (–20V, 75mΩ @ –4.5V, –3.1A) device for bidirectional power control. It delivers low on-resistance, low gate charge (Qg = 3.6nC N-ch / 5.9nC P-ch), and compact 4mm² footprint, enabling high-efficiency load switching in space-constrained portable power adaptors and USB-C PD circuits.

For engineers reviewing the DMC2053UFDB-7 datasheet, DMC2053UFDB-7 pinout, DMC2053UFDB-7 application, or DMC2053UFDB-7 equivalent, this dual-channel MOSFET supports precise synchronous rectification, battery protection, and dual-rail power gating - with verified thermal resistance (R_θJA = 110°C/W under enhanced layout), body diode recovery (t_RR = 6.0ns / 10.5ns), and automotive-grade variant availability (DMC2053UFDBQ).

Technical Context

This complementary pair operates with matched gate threshold voltages (V_GS(TH) = +0.4–1.0V for N-ch, –0.45 to –1.0V for P-ch), enabling coordinated turn-on in half-bridge or H-bridge configurations without cross-conduction risk. Its symmetric voltage rating (±20V) and differential R_DS(ON) tracking across temperature ensure stable current sharing in bidirectional DC-DC stages.

The device integrates independent source terminals (S1, S2) and shared drain-side routing (D1/D2 adjacent), supporting discrete-level control of high-side (P-ch) and low-side (N-ch) paths. Gate drive compatibility with 1.8V–4.5V logic ensures direct interfacing with modern microcontrollers and PMICs without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	±20V - Supports rail-to-rail operation in 5V–12V systems with 2× safety margin against transients.
RDS(ON) N-ch	35mΩ @ VGS = 4.5V - Enables ≤160mW conduction loss at 4.6A, critical for thermally limited portable designs.
RDS(ON) P-ch	75mΩ @ VGS = –4.5V - Delivers <180mW loss at –3.1A, suitable for reverse-polarity protection and battery disconnect.
Qg Total	3.6nC (N) / 5.9nC (P) - Reduces gate drive power and switching transition time, improving efficiency above 500kHz.
Ciss	369pF (N) / 440pF (P) - Low input capacitance minimizes Miller effect, easing high-speed PWM control stability.
Package	U-DFN2020-6 (Type B), 2.0×2.0×0.6mm - Enables ultra-dense PCB layouts with 4mm² footprint and 0.6mm max height.
Thermal RθJA	110°C/W - Achievable with 1-inch² copper pour; allows 1.14W continuous dissipation at +70°C ambient.

Pinout & Package

U-DFN2020-6 (Type B) package with exposed thermal pad (no internal connection), 0.65mm pitch, and NiPdAu-plated copper leadframe. Bottom-view pin numbering starts at top-left corner (Pin 1 = D1).

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	Primary high-current output node for low-side switching; electrically isolated from D2.
S1	N-channel source	Return path for N-ch current; tied to system ground in typical load-switch configuration.
G1	N-channel gate	Logic-level control input; requires 1.8V–4.5V drive for full enhancement.
S2	P-channel source	Input rail connection point for high-side switching; referenced to positive supply.
G2	P-channel gate	Inverted logic control node; driven low (≤0.5V) to turn on P-ch device.
D2	P-channel drain	Output node for high-side switching; shares no internal connection with D1.

Key Features

Feature	Design Value
Complementary channel pairing	Single-package integration of matched ±20V N/P MOSFETs eliminates layout skew and timing mismatch in dual-rail control.
Low-profile thermal design	0.6mm max height and 110°C/W R_θJA enable use in slim adapters and wearables without heatsinks.
Lead-free & halogen-free	RoHS 3 / "Green" compliant (Br+Cl <1500ppm, Sb <1000ppm); qualified for industrial and consumer end-equipment.
Low gate charge asymmetry	Q_g ratio (N:P) = 1:1.6 enables balanced drive strength in synchronous buck controllers without gate driver scaling.

Applications

USB-C Power Delivery Load Switch

Portable Battery Protection Circuit

Use Scenario: Bidirectional 5–20V power path management in USB-C PD sink devices with overvoltage/overcurrent cutoff.

IC Role / Device Role / Timing Role: N-channel handles low-side discharge path; P-channel controls high-side input isolation during fault events.

Use Value: 35mΩ/75mΩ R_DS(ON) limits voltage drop to <150mV at 2A, preserving PD negotiation accuracy and minimizing heat rise in 10mm² board area.

Use Scenario: Reverse-polarity and over-discharge protection in single-cell Li-ion packs for Bluetooth earbuds and smartwatches.

IC Role / Device Role / Timing Role: P-channel blocks reverse current flow at pack terminals; N-channel enables active discharge of protection FET gate during shutdown.

Use Value: Independent S1/S2 terminals allow true 4-terminal sensing; body diode V_SD = 0.7V (N) / –0.7V (P) ensures fast fault response without external Schottky.

Compact DC-DC Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Secondary-side synchronous rectification in isolated 5V/3.3V flyback converters for IoT edge nodes.

IC Role / Device Role / Timing Role: N-channel replaces output diode in low-side configuration; P-channel manages auxiliary bias winding regulation.

Use Value: 6.0ns/10.5ns t_RR prevents shoot-through during dead-time; C_iss <450pF ensures clean gate transitions at 1MHz switching.

Use Scenario: Selective power cycling of RF transceivers, ADCs, and MEMS sensors in battery-powered condition monitoring systems.

IC Role / Device Role / Timing Role: Complementary pair acts as dual-rail switch: N-ch gates V_DD to digital core; P-ch gates V_BAT to analog front-end.

Use Value: 4mm² footprint fits within 3×3mm sensor module keep-out zone; 0.0065g mass avoids mechanical resonance in vibration-sensitive deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2056UFDB-7	Higher R_DS(ON): 48mΩ (N) / 105mΩ (P) @ 4.5V; same package and pinout.	Lower cost, reduced efficiency; suited for <2A average current applications.	Select when thermal budget allows >200mW per channel and cost sensitivity outweighs efficiency targets.
SI6955ADQ-T1-GE3	Dual N-channel only (30V, 28mΩ); requires external P-ch or charge pump for high-side drive.	Lacks integrated P-ch; increases BOM count and layout complexity for true complementary control.	Choose only if system already uses dedicated high-side gate drivers or operates exclusively in low-side switching mode.

Compared with DMC2053UFDB-7, DMC2056UFDB-7 trades 13mΩ/30mΩ higher on-resistance for lower unit cost, while SI6955ADQ-T1-GE3 forces external high-side support - making DMC2053UFDB-7 the optimal choice for space-constrained, self-contained bidirectional power control requiring ≤4.6A/–3.1A capability.

Availability

DMC2053UFDB-7 is available at Aetrix Electronics and suitable for USB-C PD load switching, portable battery protection, and compact DC-DC synchronous rectification requiring stable component supply and guaranteed long-term sourcing.

Supply support for DMC2053UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMC2053UFDB belongs to Diodes' U-DFN complementary MOSFET product line, engineered specifically for miniaturized, high-density power switching in portable and battery-operated electronics where footprint, thermal performance, and dual-rail control integration are critical.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

The N-channel supports 3.7A and the P-channel supports –2.5A at TA = +70°C with 1-inch² copper pour (Note 6). These values reflect derating from the +25°C ratings (4.6A and –3.1A) due to thermal resistance limitations, and assume proper PCB layout per Diodes' recommended pad dimensions.

Does DMC2053UFDB-7 require a gate resistor for ESD-safe handling?

No external gate resistor is required for ESD protection during handling, as the device features built-in gate protection diodes rated for ±100nA leakage at ±12V. However, a 10Ω series gate resistor is recommended in circuit design to dampen ringing and limit peak gate current during fast switching transitions.

Can the N-channel and P-channel be operated simultaneously in a synchronous buck configuration?

No - simultaneous conduction would cause shoot-through. The device is intended for complementary control with dead-time insertion (≥50ns) between N-ch turn-off and P-ch turn-on. Verified timing parameters (t_D(OFF) = 12.5ns N-ch, 31ns P-ch) support robust dead-time design in standard buck controllers.

Is the thermal pad on the U-DFN2020-6 package electrically connected internally?

No - the exposed thermal pad is not connected to any internal die or terminal. It must be soldered to a PCB thermal plane for heat dissipation but left floating electrically. Diodes specifies no internal bond wire or metal trace linking the pad to D1, D2, S1, S2, G1, or G2.

DMC2053UFDB-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta), 3.1A (Ta)

Rds On (Max) @ Id, Vgs:: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.7nC @ 10V, 12.7nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 369pF @ 10V, 440pF @ 10V

Power - Max:: 820mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC2053UFDB-7 FAQ

1.How can I place an order for DMC2053UFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2053UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2053UFDB-7 reliable?

The price and inventory of DMC2053UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UFDB-7 is usually 5 days.

3.What payment methods are accepted for DMC2053UFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2053UFDB-7?

DMC2053UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2053UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2053UFDB-7?

For technical support, including DMC2053UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UFDB-7 requirements.

6.How does Aetrix verify that DMC2053UFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMC2053UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UFDB-7 meets industry standards.

7.What is the process for return or replacement of DMC2053UFDB-7?

All DMC2053UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2053UFDB-7 part is unused and in its original packaging.

Return procedure for DMC2053UFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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