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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2053UFDBQ-13

Name: DMC2053UFDBQ-13
Brand: Diodes Incorporated
SKU: DMC2053UFDBQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2053UFDBQ-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: DMC2053UFDBQ-13.pdf

Description:: MOSFET N/P-CH 20V 4.6A 6UDFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMC2053UFDBQ-13 from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 35mΩ @ 4.5V, 4.6A) and P-channel (–20V, 75mΩ @ –4.5V, –3.1A) device for bidirectional power control. It delivers low on-resistance, low gate charge (3.6nC/5.9nC), and AEC-Q101 qualification-enabling compact, high-efficiency load switching in automotive and portable power adaptors.

For engineers reviewing the DMC2053UFDBQ-13 datasheet, DMC2053UFDBQ-13 pinout, DMC2053UFDBQ-13 application, or DMC2053UFDBQ-13 equivalent, key selection criteria include dual-channel R_DS(ON) matching at low V_GS, thermal resistance (R_θJA = 110°C/W with copper pad), body diode recovery (t_RR = 6.0ns/10.5ns), and automotive-grade reliability under IATF 16949 manufacturing.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common thermally optimized U-DFN2020-6 footprint. The N-channel device features a gate threshold voltage of 0.4–1.0V and 24mΩ typical R_DS(ON) at V_GS = 4.5V; the P-channel counterpart has V_GS(TH) = –0.45 to –1.0V and 57mΩ typical R_DS(ON) at V_GS = –4.5V.

Both channels support ±12V gate-source rating and operate across –55°C to +150°C junction temperature. Dynamic performance includes low input capacitance (C_iss = 369pF/440pF), fast switching (t_D(ON) = 2.6ns/3.2ns), and controlled body diode recovery (Q_RR = 0.9nC/3.0nC), enabling synchronous rectification and H-bridge drive in space-constrained DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V (N-ch), –20V (P-ch): Supports 12V rail switching with 67% voltage margin against transients
R_DS(ON) @ V_GS = ±4.5V	35mΩ (N), 75mΩ (P): Enables ≤165mW conduction loss per channel at rated current
I_D (T_A = 25°C)	4.6A (N), –3.1A (P): Sustains continuous load current with 1.14W total package dissipation
Q_g	3.6nC (N), 5.9nC (P): Reduces gate-drive power and enables >1MHz PWM operation
C_iss	369pF (N), 440pF (P): Limits Miller-induced shoot-through risk in half-bridge configurations
t_RR	6.0ns (N), 10.5ns (P): Minimizes reverse-recovery energy loss during synchronous FET commutation
R_θJA	110°C/W (with 1-inch² copper): Allows 1.14W operation at ≤70°C ambient without forced cooling

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	Main current path for high-side N-MOSFET; connects to input rail in load-switch topology
S1	N-channel source	Reference node for N-FET; tied to output or ground depending on configuration
G1	N-channel gate	Control input requiring ≥1.0V overdrive for full enhancement; low C_iss eases driver sizing
D2	P-channel drain	Main current path for low-side P-MOSFET; connects to output node in high-side switch
S2	P-channel source	Reference node for P-FET; typically tied to input rail in high-side configuration
G2	P-channel gate	Inverted control input; requires negative V_GS for turn-on; compatible with standard logic-level drivers via level shift

Key Features

Feature	Design Value
Complementary dual-channel integration	Eliminates discrete pairing mismatch; ensures matched thermal coupling and timing in bidirectional switches
0.6mm max height, 4mm² footprint	Enables ultra-thin power stages in wearables and USB-C PD adapters where Z-height < 0.7mm is mandatory
AEC-Q101 qualified & PPAP capable	Validated for automotive cabin electronics (e.g., infotainment power rails) with zero defect history in IATF 16949 facilities
Halogen- and antimony-free "Green" construction	Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU) without compromising thermal or electrical performance
Low-profile thermal pad (exposed DAP)	Provides direct thermal path to PCB copper; achieves 110°C/W R_θJA with minimal layout area

Applications

Automotive Cabin Power Switching

USB-C Power Delivery Load Control

Use Scenario: Controlling 5V/9V/15V auxiliary rails for infotainment displays and telematics modules in vehicles.

IC Role / Device Role / Timing Role: Dual-channel load switch managing hot-swap sequencing and reverse-current blocking between battery and subsystems.

Use Value: AEC-Q101 qualification ensures reliability across –40°C to +105°C ambient; matched R_DS(ON) minimizes voltage drop asymmetry during load transitions.

Use Scenario: Enabling/disabling power paths in USB-C PD sink devices (e.g., laptops, monitors) supporting programmable voltage negotiation.

IC Role / Device Role / Timing Role: High-side N-MOSFET and low-side P-MOSFET pair implementing bidirectional current control for VBUS regulation and fault isolation.

Use Value: 35mΩ/75mΩ R_DS(ON) at 4.5V gate drive reduces conduction loss below 150mW per channel; 6.0ns/10.5ns t_RR prevents shoot-through during fast PD contract renegotiation.

Portable Medical Device Power Management

Industrial IoT Sensor Node Power Gating

Use Scenario: Isolating battery-powered medical sensors (e.g., pulse oximeters, glucose meters) from main MCU during sleep cycles.

IC Role / Device Role / Timing Role: Complementary pair acting as ultra-low-leakage power gate, leveraging <1µA IDSS to extend battery life beyond 1 year.

Use Value: 0.6mm profile fits within 3mm-thick handheld enclosures; 1.14W PD rating supports burst-mode sensor activation without thermal derating.

Use Scenario: Managing power to wireless transceivers (BLE, LoRa) and analog front-ends in battery-operated edge nodes deployed in remote locations.

IC Role / Device Role / Timing Role: Low-quiescent-load switch enabling rapid wake-up (<100ns) and precise power domain isolation between active and deep-sleep states.

Use Value: 369pF/440pF C_iss allows clean gate drive with microcontroller GPIOs; 4mm² footprint preserves PCB area for antenna clearance and RF shielding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2056UFDBQ-13	Higher R_DS(ON): 48mΩ/105mΩ @ ±4.5V; lower Q_g (2.8nC/4.5nC); same package	Better suited for lower-frequency, higher-voltage margin applications where conduction loss is secondary to gate drive simplicity	Select when prioritizing gate-drive energy reduction over on-resistance in <500kHz switching topologies
SI6926ADQ-T1-GE3	Asymmetric package (SO-8); higher R_DS(ON) (40mΩ/80mΩ); higher R_θJA (130°C/W); no AEC-Q101	Targeted at industrial non-automotive systems where board space is less constrained and qualification is not required	Choose only if SO-8 rework compatibility or legacy layout reuse outweighs thermal and automotive compliance advantages

Compared with DMC2053UFDBQ-13, DMC2056UFDBQ-13 trades 37% higher conduction loss for 22% lower gate charge-favoring low-frequency efficiency; SI6926ADQ-T1-GE3 sacrifices AEC-Q101, thermal performance, and footprint density for broader distributor availability and SO-8 assembly familiarity.

Availability

DMC2053UFDBQ-13 is available at Aetrix Electronics and suitable for automotive cabin electronics, USB-C PD adapters, portable medical instrumentation, and industrial IoT sensor nodes requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMC2053UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMC2053UFDBQ belongs to Diodes' automotive-qualified U-DFN2020-6 MOSFET product line, engineered for space-constrained, high-reliability power switching in safety-critical and portable systems.

FAQ

What is the maximum allowable gate-source voltage for each channel?

The absolute maximum gate-source voltage is ±12V for both the N-channel (G1) and P-channel (G2) terminals. Exceeding this rating-even transiently-risks oxide breakdown. Designers must ensure driver circuits limit V_GS to ≤±12V under all conditions, including ringing and overshoot during fast switching.

How does the thermal performance change with PCB copper area?

R_θJA improves from 153°C/W (minimum pad) to 110°C/W (1-inch² copper plate). Using the recommended 1.0mm × 1.0mm thermal pad under the exposed DAP reduces junction-to-ambient rise by 43°C at 1.14W dissipation-critical for maintaining <125°C T_J in sealed enclosures.

Is the body diode suitable for reverse-current protection in load-switch applications?

Yes-the integrated body diodes provide inherent reverse-current blocking when the MOSFET is off. With V_SD = 0.7V (N) and –0.7V (P) at 1A, they enable efficient back-to-back switching for true bidirectional isolation without external diodes, reducing BOM count and footprint.

What packaging options are available for DMC2053UFDBQ-13?

DMC2053UFDBQ-13 is supplied in tape-and-reel format with 10,000 units per reel, using EIA-481-compliant carrier tape compatible with standard SMT pick-and-place equipment. The U-DFN2020-6 (Type B) package uses NiPdAu-plated terminals and meets IPC/JEDEC J-STD-020 Level 1 moisture sensitivity requirements.

DMC2053UFDBQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta), 3.1A (Ta)

Rds On (Max) @ Id, Vgs:: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.7nC @ 10V, 12.7nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 369pF @ 10V, 440pF @ 10V

Power - Max:: 820mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMC2053UFDBQ-13 FAQ

1.How can I place an order for DMC2053UFDBQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2053UFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2053UFDBQ-13 reliable?

The price and inventory of DMC2053UFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UFDBQ-13 is usually 5 days.

3.What payment methods are accepted for DMC2053UFDBQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UFDBQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2053UFDBQ-13?

DMC2053UFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2053UFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2053UFDBQ-13?

For technical support, including DMC2053UFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UFDBQ-13 requirements.

6.How does Aetrix verify that DMC2053UFDBQ-13 is sourced from the original manufacturer or authorized distributors?

All DMC2053UFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UFDBQ-13 meets industry standards.

7.What is the process for return or replacement of DMC2053UFDBQ-13?

All DMC2053UFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UFDBQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2053UFDBQ-13 part is unused and in its original packaging.

Return procedure for DMC2053UFDBQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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