Diodes Incorporated DMC2053UFDBQ-7
- Part No.:
- DMC2053UFDBQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC2053UFDBQ-7.pdf
- Description:
- MOSFET N/P-CH 20V 4.6A 6UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:8,535
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Product details
Overview
DMC2053UFDBQ-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single U-DFN2020-6 (Type B) package, integrating an N-channel (20V, 35mΩ @ 4.5V, 4.6A) and P-channel (–20V, 75mΩ @ –4.5V, –3.1A) MOSFET for bidirectional power control. It delivers low on-resistance, low gate charge (3.6nC/5.9nC), and AEC-Q101 qualification for automotive load switching and portable power management.
For engineers reviewing the DMC2053UFDBQ-7 datasheet, DMC2053UFDBQ-7 pinout, DMC2053UFDBQ-7 application, or DMC2053UFDBQ-7 equivalent, this device supports high-efficiency dual-rail power sequencing, battery protection circuits, and space-constrained DC-DC converter synchronous rectification where thermal performance (RθJA = 110°C/W with copper pad) and low-profile packaging (0.6mm max height) are critical.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection beyond substrate isolation. The N-channel exhibits VGS(TH) of 0.4–1.0V and RDS(ON) as low as 24mΩ at VGS = 4.5V; the P-channel has VGS(TH) of –0.45 to –1.0V and RDS(ON) down to 57mΩ at VGS = –4.5V. Both devices feature low Ciss (369pF / 440pF) and fast switching (tD(ON) = 2.6ns / 3.2ns).
Thermal design relies on FR-4 PCB mounting with 1-inch² copper plate achieving 110°C/W RθJA, while its U-DFN2020-6 (Type B) footprint occupies only 4mm². The device operates across –55°C to +150°C junction temperature and supports automotive PPAP with IATF 16949 manufacturing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS (N/P) | 20V / –20V - Enables operation in 12V automotive and 5V/3.3V logic-supplied systems without breakdown risk. |
| RDS(ON) Max | 35mΩ @ 4.5V (N), 75mΩ @ –4.5V (P) - Minimizes conduction loss in high-current load switches up to 4.6A/–3.1A. |
| Qg Total | 3.6nC (N), 5.9nC (P) - Reduces gate drive power and enables efficient 1MHz+ switching in DC-DC controllers. |
| Ciss | 369pF (N), 440pF (P) - Limits Miller effect and improves noise immunity in high-dV/dt environments. |
| TJ Range | –55°C to +150°C - Supports under-hood automotive and industrial ambient conditions without derating. |
| Package | U-DFN2020-6 (Type B), 2.0×2.0×0.6mm - Fits ultra-compact PCB layouts with solderable NiPdAu terminals. |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive electronics including HTOL, TC, and ESD. |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0mm × 2.0mm × 0.6mm leadless plastic package with exposed thermal pad and NiPdAu-plated terminals. Its bottom-view pinout places Pin 1 (D1) at top-left corner, with symmetrical layout optimized for thermal dissipation and routing simplicity on dense PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-Channel Drain | Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration. |
| S1 | N-Channel Source | Reference node for N-MOSFET; ties to load or ground depending on topology (e.g., low-side switch or synchronous rectifier). |
| G1 | N-Channel Gate | Control terminal requiring ≥4.5V drive for full enhancement; low Qg enables fast turn-on with minimal driver loss. |
| D2 | P-Channel Drain | Main current path for low-side P-MOSFET; used in reverse-polarity protection or dual-rail sequencing. |
| S2 | P-Channel Source | Connects to positive supply in high-side P-MOSFET configurations; body diode conducts from S2 to D2. |
| G2 | P-Channel Gate | Driven negative relative to S2; threshold of –0.45V to –1.0V allows logic-level control with inverted drive signals. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single-package N+P MOSFET eliminates inter-device timing skew and reduces board area by >50% vs discrete solutions. |
| Low On-Resistance at Logic-Level Drive | 35mΩ (N) and 75mΩ (P) at ±4.5V enables <100mW conduction loss at 2A, critical for portable power adaptors. |
| Ultra-Small Footprint | 4mm² PCB area matches 0805 passive size-ideal for wearables, TWS earbuds, and USB-C PD modules. |
| AEC-Q101 Qualification | Validated for automotive load switches including infotainment power rails and ADAS camera modules. |
| Green, Halogen-Free Construction | Meets RoHS 3 (2015/863/EU), UL 94V-0, and Diodes' "Green" standard (<900ppm Br+Cl, <1000ppm Sb). |
Applications
| Automotive Load Switch | USB-C Power Delivery |
|---|---|
Use Scenario: Controlling power to infotainment head units during ignition cycles to prevent brownouts and enable controlled wake-up. IC Role / Device Role / Timing Role: Dual-rail load switch managing both 12V main supply (via N-MOSFET) and 5V auxiliary rail (via P-MOSFET) with coordinated gate timing. Use Value: Eliminates need for two separate MOSFET drivers and reduces BOM count by one IC; AEC-Q101 ensures reliability over 15-year vehicle lifetime. | Use Scenario: Bidirectional power path control in USB-C DRP (dual-role port) implementations supporting sink/source mode switching. IC Role / Device Role / Timing Role: N-MOSFET handles high-current source path (VBUS → device), P-MOSFET manages reverse current blocking during sink operation. Use Value: Low RDS(ON) minimizes voltage drop across VBUS path (<60mV at 2A), preserving PD negotiation margin and thermal headroom. |
| Portable Power Adaptor | Battery Protection Circuit |
Use Scenario: Secondary-side synchronous rectification in 5–20W GaN-based AC/DC adapters targeting EU CoC Tier 2 efficiency. IC Role / Device Role / Timing Role: N-MOSFET replaces Schottky diode in LLC resonant converter output stage; P-MOSFET controls enable/disable sequencing. Use Value: 35mΩ RDS(ON) cuts conduction loss by 65% vs 40V Schottky, raising full-load efficiency from 91% to 93.5% at 12V/1.5A. | Use Scenario: Overvoltage/undervoltage cutoff and reverse-current blocking in single-cell Li-ion battery packs for medical IoT sensors. IC Role / Device Role / Timing Role: P-MOSFET acts as high-side protection switch; N-MOSFET monitors cell voltage via dedicated ADC reference path. Use Value: 75mΩ RDS(ON) limits protection path loss to <120mW at 1.5A, extending runtime by 4.2% versus 100mΩ alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2056UFDBQ-7 | Higher RDS(ON): 48mΩ (N), 105mΩ (P) at ±4.5V; same package and pinout. | Targeted at cost-sensitive consumer power banks where 15% higher conduction loss is acceptable. | Select when thermal budget allows >0.5W total loss and AEC-Q101 is not required. |
| SI6926ADQ-T1-GE3 | Different package (PowerPAK® SC-70-6); RDS(ON) = 42mΩ/90mΩ; no AEC-Q101 rating. | Used in non-automotive industrial PLC I/O modules requiring similar dual-channel control. | Choose only for legacy designs already using SC-70 footprint; not drop-in due to mechanical mismatch. |
Compared with DMC2053UFDBQ-7, DMC2056UFDBQ-7 trades lower cost for higher conduction loss and no automotive qualification, while SI6926ADQ-T1-GE3 offers comparable specs in a non-pin-compatible package lacking AEC-Q101 validation-making DMC2053UFDBQ-7 the sole option for space-constrained, thermally demanding automotive load switching.
Availability
DMC2053UFDBQ-7 is available at Aetrix Electronics and suitable for automotive load switching, USB-C power delivery, and portable power adaptor applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for DMC2053UFDBQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMC series targets space-constrained, high-efficiency power control applications, with the DMC2053UFDBQ-7 specifically engineered to replace discrete N+P MOSFET pairs in automotive-grade load switches and portable power systems.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
The N-channel supports 3.7A and the P-channel supports –2.5A at TA = +70°C with FR-4 PCB and 1-inch² copper pad per datasheet Note 6. These values reflect thermal derating from the +25°C ratings (4.6A/–3.1A) due to reduced heat dissipation at elevated ambient temperatures.
Does the DMC2053UFDBQ-7 require external gate resistors for stable switching?
No external gate resistor is mandatory-the device's low gate resistance (4.1Ω N, 8.5Ω P) and moderate Qg allow direct driving from standard logic-level PWM controllers. However, a 5–10Ω series resistor is recommended to dampen ringing in high-di/dt applications like synchronous buck converters.
Can the N- and P-channel MOSFETs be operated simultaneously in a totem-pole configuration?
No-simultaneous conduction would cause shoot-through due to lack of integrated dead-time control or cross-conduction protection. The device is intended for complementary but non-overlapping use (e.g., high-side N + low-side P in load switch), not half-bridge totem-pole topologies.
Is the thermal pad on the U-DFN2020-6 (Type B) package electrically connected internally?
No-the exposed thermal pad is not internally connected to any terminal; it must be soldered to a PCB copper pour for thermal conduction only. Electrical isolation is maintained, allowing flexible grounding or floating thermal pad layout per design requirements.
DMC2053UFDBQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.7nC @ 10V, 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V, 440pF @ 10V
- Power - Max:
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC2053UFDBQ-7 FAQ
1.How can I place an order for DMC2053UFDBQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2053UFDBQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2053UFDBQ-7 reliable?
The price and inventory of DMC2053UFDBQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UFDBQ-7 is usually 5 days.
3.What payment methods are accepted for DMC2053UFDBQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UFDBQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2053UFDBQ-7?
DMC2053UFDBQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2053UFDBQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2053UFDBQ-7?
For technical support, including DMC2053UFDBQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UFDBQ-7 requirements.
6.How does Aetrix verify that DMC2053UFDBQ-7 is sourced from the original manufacturer or authorized distributors?
All DMC2053UFDBQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UFDBQ-7 meets industry standards.
7.What is the process for return or replacement of DMC2053UFDBQ-7?
All DMC2053UFDBQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UFDBQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2053UFDBQ-7 part is unused and in its original packaging.
Return procedure for DMC2053UFDBQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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