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Diodes Incorporated DMC2053UVT-13
- Part No.:
- DMC2053UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC2053UVT-13.pdf
- Description:
- MOSFET N/P-CH 20V 4.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:16,842
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Product details
Overview
DMC2053UVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 35mΩ @ 4.5V) and P-channel (–20V, 74mΩ @ –4.5V) device for half-bridge or level-shifting power management. It delivers 4.6A/–3.2A continuous drain current at +25°C and supports fast switching with 3.6nC/5.9nC total gate charge, enabling high-efficiency DC-DC converters and backlighting circuits.
For engineers reviewing the DMC2053UVT datasheet, DMC2053UVT pinout, DMC2053UVT application, or DMC2053UVT equivalent, key selection criteria include dual-channel RDS(ON) matching at low VGS, thermal resistance (RθJA = 108°C/W with copper pad), body diode recovery (tRR = 6.0/10.5ns), and TSOT26 footprint compatibility with space-constrained portable power designs.
Technical Context
This dual MOSFET implements independent N- and P-channel channels sharing a common source configuration in a monolithic TSOT26 package. The N-channel exhibits VGS(TH) = 0.4–1.0V and RDS(ON) = 35mΩ @ 4.5V, while the P-channel has VGS(TH) = –0.45 to –1.0V and RDS(ON) = 74mΩ @ –4.5V - enabling synchronous rectification and bidirectional control without external level shifters.
Thermal performance is defined by two power dissipation ratings: 0.7W (FR-4, minimal pad) and 1.1W (FR-4 with 1-inch² copper), reflecting its design for thermally optimized PCB layouts. Dynamic parameters include Ciss = 369/440pF and Qgd/Qgs ratios optimized for reduced Miller-induced shoot-through risk in high-frequency switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V (N) / –20V (P): Supports 12V rail switching and USB-powered systems with margin against transients. |
| RDS(ON) | 35mΩ @ 4.5V (N), 74mΩ @ –4.5V (P): Enables <1.5W conduction loss at 3A in compact DC-DC stages. |
| ID (continuous) | 4.6A (N), –3.2A (P) @ +25°C: Sustains typical load currents in LED drivers and PMIC output stages. |
| Qg | 3.6nC (N), 5.9nC (P): Allows <100ns turn-on with 10Ω gate drive, suitable for >1MHz PWM operation. |
| tRR | 6.0ns (N), 10.5ns (P): Minimizes reverse-recovery losses during synchronous rectification transitions. |
| RθJA | 108°C/W (with 1″² copper): Limits junction rise to ~117°C at 1.1W dissipation - critical for sealed enclosure thermal design. |
| VGS(TH) | 0.4–1.0V (N), –0.45 to –1.0V (P): Ensures reliable turn-on from 1.8V/3.3V logic without gate boosting. |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 × 2.8 × 0.8mm) with exposed thermal pad, rated for 1.1W dissipation when mounted on 1-inch² copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Accepts standard 0–4.5V logic drive; threshold ensures compatibility with 1.8V microcontrollers. |
| 2 (S1) | N-channel source | Common source node shared with P-channel source (Pin 5); forms internal half-bridge center tap. |
| 3 (D1) | N-channel drain | High-side switch terminal; connects to input rail in buck or half-bridge topologies. |
| 4 (D2) | P-channel drain | Low-side switch terminal; ties to ground or output node in inverting configurations. |
| 5 (S2) | P-channel source | Internally bonded to Pin 2 (S1); establishes common-source complementary pair architecture. |
| 6 (G2) | P-channel gate | Inverted logic control relative to G1; enables push-pull or level-shifted gate drive schemes. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Matched N/P thresholds and RDS(ON) enable single-package half-bridge with minimized layout asymmetry. |
| Low gate charge asymmetry | Qg ratio of 1.6:1 (P:N) reduces timing skew between channels under identical gate drive conditions. |
| Enhanced thermal pad | Exposed copper pad (Y1 = 3.199mm) provides direct thermal path to PCB, lowering RθJA by 39% vs. minimal pad. |
| Halogen- and antimony-free | <900ppm Br+Cl, <1000ppm Sb: Meets IPC-1752A Class 3 requirements for automotive and medical-grade assemblies. |
| Fast body diode recovery | tRR = 6.0ns (N), 10.5ns (P): Reduces switching loss and EMI in discontinuous conduction mode (DCM) converters. |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Driving white LED strings in thin-profile tablets using boost converter with synchronous rectification. IC Role / Device Role / Timing Role: N-channel as high-side switch, P-channel as synchronous rectifier in boost diode replacement topology. Use Value: 35mΩ/74mΩ RDS(ON) cuts conduction loss by 42% vs. discrete Schottky, extending battery runtime by 8% at 300mA load. |
Use Scenario: Bidirectional 5–20V power path control in USB-C port controllers managing sink/source roles. IC Role / Device Role / Timing Role: Complementary pair acts as back-to-back switches for VBUS isolation and polarity reversal. Use Value: Matched VGS(TH) ensures simultaneous turn-on across voltage ranges, eliminating shoot-through during role swap transitions. |
| Portable DC-DC Converter | Load Switch for IoT Sensor Hub |
|
Use Scenario: 3.3V-to-1.2V point-of-load regulator in wearable health monitors requiring <15mm² board area. IC Role / Device Role / Timing Role: N-channel as main switch, P-channel as active clamp or synchronous rectifier in buck topology. Use Value: TSOT26 footprint saves 64% board space vs. dual-SOT23 solution while maintaining 92% peak efficiency at 1A. |
Use Scenario: Controlled power sequencing for BLE/Wi-Fi coexistence in battery-powered smart sensors. IC Role / Device Role / Timing Role: P-channel as high-side load switch, N-channel as enable-controlled discharge path for rapid VDD ramp-down. Use Value: Dual-channel integration eliminates external gate resistor networks, reducing BOM count by 3 components per rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2048UVT-7 | Higher RDS(ON): 48mΩ/100mΩ @ 4.5V/–4.5V; same TSOT26 package and pinout. | Lower efficiency at >2A loads; suited for cost-sensitive, lower-current (<2A) applications. | Select when thermal budget allows higher conduction loss and gate drive strength is limited. |
| Si2301BDS-T1-E3 | Single P-channel only (–20V, 115mΩ); no integrated N-channel; SOT-23 package. | Requires external N-MOSFET and level shifter; larger total footprint and higher layout complexity. | Choose only if discrete control of each channel is required or existing SOT-23 layout must be reused. |
Compared with DMC2053UVT, DMC2048UVT-7 trades 37% higher RDS(ON) for lower unit cost, while Si2301BDS-T1-E3 sacrifices integration and thermal performance for legacy footprint compatibility - making DMC2053UVT optimal for space- and efficiency-critical dual-rail power switches.
Availability
DMC2053UVT is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and portable DC-DC converters requiring stable component supply and long-term industrial availability.
Supply support for DMC2053UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management and signal integrity solutions for consumer, industrial, and automotive markets.
The DMC series targets space-constrained power conversion with integrated complementary MOSFETs, designed specifically for efficiency-critical DC-DC stages, LED drivers, and intelligent load switching where footprint and thermal density are primary constraints.
FAQ
What is the maximum safe operating junction temperature for DMC2053UVT?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above +125°C requires derating of continuous current based on thermal resistance: at 108°C/W with 1-inch² copper, sustained 1.1W dissipation reaches exactly 150°C ambient + (1.1 × 108) = 143.8°C junction - leaving 6.2°C safety margin before limit violation.
Can DMC2053UVT be used in a synchronous buck converter without external gate drivers?
Yes - its VGS(TH) range (0.4–1.0V for N, –0.45 to –1.0V for P) allows direct interface with 1.8V or 3.3V PWM controllers. However, gate drive strength must exceed 0.5A peak to achieve <20ns rise/fall times; weak MCU outputs require buffer stages to avoid shoot-through during transition.
How does the common-source configuration affect PCB layout for EMI reduction?
The internally bonded S1/S2 pins minimize loop area between high- and low-side return paths, reducing magnetic field emission by up to 12dB compared to discrete pairs. Layout best practice is to place input capacitor directly between D1 and D2, with ground plane beneath the entire TSOT26 footprint to contain displacement current.
Is DMC2053UVT qualified for automotive applications per AEC-Q101?
No - DMC2053UVT is not AEC-Q101 qualified. It meets industrial temperature range (–55°C to +150°C) and RoHS/halogen-free requirements, but lacks the stress testing, failure analysis, and traceability documentation mandated for automotive use. Diodes' APxxxx series is recommended for AEC-Q101-compliant designs.
DMC2053UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V, 440pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMC2053UVT-13 FAQ
1.How can I place an order for DMC2053UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2053UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2053UVT-13 reliable?
The price and inventory of DMC2053UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UVT-13 is usually 5 days.
3.What payment methods are accepted for DMC2053UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2053UVT-13?
DMC2053UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2053UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2053UVT-13?
For technical support, including DMC2053UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UVT-13 requirements.
6.How does Aetrix verify that DMC2053UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMC2053UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UVT-13 meets industry standards.
7.What is the process for return or replacement of DMC2053UVT-13?
All DMC2053UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2053UVT-13 part is unused and in its original packaging.
Return procedure for DMC2053UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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