Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC2053UVTQ-13

Part No.:
DMC2053UVTQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMC2053UVTQ-13.pdf
Description:
MOSFET N/P-CH 20V 4.6A TSOT26
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC2053UVTQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 35mΩ @ 4.5V) and P-channel (–20V, 74mΩ @ –4.5V) device for bidirectional power control. It delivers 4.6A/–3.2A continuous drain current at +25°C, supports low-voltage logic-level drive down to 1.8V, and is AEC-Q101 qualified for automotive power management.

For engineers reviewing the DMC2053UVTQ datasheet, DMC2053UVTQ pinout, DMC2053UVTQ application, or DMC2053UVTQ equivalent, this dual-channel MOSFET enables compact, high-efficiency synchronous rectification, load switching, and DC-DC converter topologies where space-constrained bidirectional control and thermal robustness are critical.

Technical Context

This device integrates two discrete enhancement-mode MOSFETs-N-channel and P-channel-with matched gate thresholds (0.4–1.0V and –0.45 to –1.0V), enabling complementary operation without external level-shifting. Its low RDS(ON) at 2.5V gate drive (43mΩ/110mΩ) supports direct interfacing with 2.5V/3.3V microcontrollers.

The TSOT26 package provides thermally efficient junction-to-ambient resistance of 108°C/W (with 1-inch² copper pad), while its low input capacitance (369pF/440pF) and fast switching (tF = 3.6ns/18ns) minimize switching losses in high-frequency (>1MHz) DC-DC converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS ±20V - Supports rail-to-rail operation across 3.3V–12V input systems without breakdown risk.
RDS(ON) (N) 35mΩ @ VGS = 4.5V - Enables <175mW conduction loss at 4.6A, critical for thermally constrained PCB layouts.
RDS(ON) (P) 74mΩ @ VGS = –4.5V - Ensures symmetric on-resistance for balanced push-pull stage efficiency.
Qg (N/P) 3.6nC / 5.9nC - Low total gate charge reduces driver power demand and enables 1MHz+ PWM operation.
ID (Cont) 4.6A / –3.2A @ +25°C - Sustains peak load currents in portable backlight drivers and USB-C PD power paths.
TJ Range –55°C to +150°C - Validated for under-hood automotive environments and industrial temperature cycling.
AEC-Q101 Qualified - Meets stress test requirements for automotive power semiconductors including HTGB, HTRB, and ESD.

Pinout & Package

TSOT26 package: 6-pin surface-mount, 2.9mm × 2.8mm × 0.9mm profile, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (D1) N-channel drain Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration.
2 (S1) N-channel source Reference node for N-MOS gate drive; tied to output or ground depending on topology.
3 (G1) N-channel gate Logic-level input (1.8V–12V compatible); requires <3.6nC charge for full turn-on.
4 (D2) P-channel drain Main current path for low-side P-MOSFET; connects to output node in synchronous buck stage.
5 (S2) P-channel source Connected to input rail in low-side switch; forms common source with N-MOS for half-bridge use.
6 (G2) P-channel gate Inverted logic interface; driven low to conduct, requiring dedicated gate driver or logic inversion.

Key Features

Feature Design Value
Complementary integration Single TSOT26 package replaces discrete N+P pair, reducing board area by >40% and parasitic inductance.
Low-voltage gate drive Operates fully enhanced at VGS = ±2.5V, enabling direct MCU GPIO control without level shifters.
Thermal performance 108°C/W RθJA with 1-inch² copper pad allows 1.1W dissipation at +70°C ambient-critical for sealed enclosures.
Automotive qualification AEC-Q101 qualified, PPAP-capable, and manufactured in IATF16949-certified facilities for Tier-1 supply chain compliance.
Green packaging Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500ppm, Sb <1000ppm), UL 94V-0 rated molding compound.

Applications

Backlight LED Driver Synchronous Buck Converter

Use Scenario: Driving white LED strings in automotive instrument clusters with PWM dimming up to 20kHz.

IC Role / Device Role / Timing Role: N-MOS as high-side switch, P-MOS as synchronous rectifier in boost-fed constant-current stage.

Use Value: 35mΩ/74mΩ RDS(ON) minimizes voltage drop across both switches, preserving headroom for 3–4 LED series stacks at 300mA.

Use Scenario: 5V-to-3.3V point-of-load conversion in ADAS camera modules with strict thermal limits.

IC Role / Device Role / Timing Role: Integrated N+P pair forms compact half-bridge; N-MOS high-side, P-MOS low-side with dead-time control.

Use Value: Low Qg (3.6nC/5.9nC) enables clean 2MHz switching with <10ns propagation delay mismatch, reducing output ripple.

USB-C Power Delivery Switch Automotive Body Control Module

Use Scenario: Bidirectional 20V/3A power path switching between legacy USB-A and USB-C ports in docking stations.

IC Role / Device Role / Timing Role: N-MOS handles forward direction (source→sink), P-MOS enables reverse current flow during DRP negotiation.

Use Value: Matched ±20V BVDSS and symmetrical RDS(ON) ensure identical forward/reverse conduction loss (<75mW each direction).

Use Scenario: Controlling 12V solenoid valves and LED indicators in door module ECUs with 150°C junction rating.

IC Role / Device Role / Timing Role: P-MOS as high-side load switch, N-MOS as diagnostic shunt for current sensing via source resistor.

Use Value: AEC-Q101 qualification and –55°C to +150°C operation guarantee reliability across cold cranking and engine bay thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2056UVTQ Higher RDS(ON): 48mΩ/100mΩ @ 4.5V; same TSOT26 footprint and pinout. Lower efficiency at high current; suitable only for <2A loads where cost reduction outweighs thermal penalty. Select when BOM cost is prioritized over thermal margin and peak efficiency is not required.
SI6926ADQ-T1-GE3 Higher VDSS: ±30V; larger SO-8 package; higher Qg (12nC/15nC). Supports wider input range but occupies 3× PCB area; slower switching limits >500kHz use. Choose only if system requires >20V absolute maximum rating and layout space permits SO-8.

Compared with DMC2053UVTQ, DMC2056UVTQ trades 37% higher conduction loss for lower unit cost, while SI6926ADQ-T1-GE3 sacrifices compactness and switching speed for extended voltage headroom-making DMC2053UVTQ optimal for space- and efficiency-critical 20V automotive and portable power designs.

Availability

DMC2053UVTQ is available at Aetrix Electronics and suitable for automotive body electronics, portable DC-DC converters, and USB-C power delivery systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for DMC2053UVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design and manufacturing operations certified to IATF16949 and ISO9001 standards.

The DMC2053UVTQ belongs to Diodes' automotive-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-reliability power switching in infotainment, ADAS, and body control modules.

FAQ

What is the maximum safe operating junction temperature for DMC2053UVTQ?

The absolute maximum junction temperature is +150°C per the datasheet's Thermal Characteristics table. Operation at this limit requires derating continuous current to ≤2.6A (N-channel) and ≤–2.6A (P-channel) at +70°C ambient, using the 1-inch² copper pad layout specified in Note 6. Exceeding this temperature risks permanent parametric shift or bondwire failure.

Can DMC2053UVTQ be used in a high-side N-MOS + low-side N-MOS synchronous buck configuration?

No-DMC2053UVTQ integrates one N-channel and one P-channel MOSFET, not two N-channels. Its P-channel device is optimized for high-side switching with simplified gate drive (no bootstrap circuit needed), not low-side synchronous rectification. For dual-N configurations, consider discrete N-MOS pairs or dedicated synchronous buck controllers with external N-MOS drivers.

Is the TSOT26 package of DMC2053UVTQ compatible with standard reflow profiles for lead-free soldering?

Yes-the device uses matte tin annealed terminals and is rated for JEDEC J-STD-020 Level 1 moisture sensitivity, permitting exposure to ambient indefinitely before reflow. It complies with IPC/JEDEC J-STD-020D peak reflow temperatures up to 260°C for 30 seconds, matching standard lead-free SAC305 profiles without preconditioning.

Does the AEC-Q101 qualification cover both N-channel and P-channel devices in the same package?

Yes-the qualification report DS41617 Rev. 2 explicitly states that the entire DMC2053UVTQ assembly-including both integrated MOSFET dice, interconnects, and TSOT26 molding-is subjected to AEC-Q101 stress tests (HTGB, HTRB, TC, UHAST, etc.) as a single qualified part number. No separate qualification is required for either channel.

DMC2053UVTQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs:
35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
369pF @ 10V, 440pF @ 10V
Power - Max:
700mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMC2053UVTQ-13 FAQ

1.How can I place an order for DMC2053UVTQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2053UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2053UVTQ-13 reliable?

The price and inventory of DMC2053UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UVTQ-13 is usually 5 days.

3.What payment methods are accepted for DMC2053UVTQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UVTQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2053UVTQ-13?

DMC2053UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2053UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2053UVTQ-13?

For technical support, including DMC2053UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UVTQ-13 requirements.

6.How does Aetrix verify that DMC2053UVTQ-13 is sourced from the original manufacturer or authorized distributors?

All DMC2053UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UVTQ-13 meets industry standards.

7.What is the process for return or replacement of DMC2053UVTQ-13?

All DMC2053UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UVTQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2053UVTQ-13 part is unused and in its original packaging.

Return procedure for DMC2053UVTQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC2053UVTQ-13 Tags

  • DMC2053UVTQ-13
  • DMC2053UVTQ-13 PDF
  • DMC2053UVTQ-13 Datasheet
  • DMC2053UVTQ-13 Specifications
  • DMC2053UVTQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC2053UVTQ-13
  • Buy DMC2053UVTQ-13
  • DMC2053UVTQ-13 Price
  • DMC2053UVTQ-13 Distributor
  • DMC2053UVTQ-13 Supplier
  • DMC2053UVTQ-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER