Diodes Incorporated DMC2053UVTQ-13
- Part No.:
- DMC2053UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC2053UVTQ-13.pdf
- Description:
- MOSFET N/P-CH 20V 4.6A TSOT26
- Quantity:
- Payment:

- Shipping:

Inventory:9,400
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMC2053UVTQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 35mΩ @ 4.5V) and P-channel (–20V, 74mΩ @ –4.5V) device for bidirectional power control. It delivers 4.6A/–3.2A continuous drain current at +25°C, supports low-voltage logic-level drive down to 1.8V, and is AEC-Q101 qualified for automotive power management.
For engineers reviewing the DMC2053UVTQ datasheet, DMC2053UVTQ pinout, DMC2053UVTQ application, or DMC2053UVTQ equivalent, this dual-channel MOSFET enables compact, high-efficiency synchronous rectification, load switching, and DC-DC converter topologies where space-constrained bidirectional control and thermal robustness are critical.
Technical Context
This device integrates two discrete enhancement-mode MOSFETs-N-channel and P-channel-with matched gate thresholds (0.4–1.0V and –0.45 to –1.0V), enabling complementary operation without external level-shifting. Its low RDS(ON) at 2.5V gate drive (43mΩ/110mΩ) supports direct interfacing with 2.5V/3.3V microcontrollers.
The TSOT26 package provides thermally efficient junction-to-ambient resistance of 108°C/W (with 1-inch² copper pad), while its low input capacitance (369pF/440pF) and fast switching (tF = 3.6ns/18ns) minimize switching losses in high-frequency (>1MHz) DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | ±20V - Supports rail-to-rail operation across 3.3V–12V input systems without breakdown risk. |
| RDS(ON) (N) | 35mΩ @ VGS = 4.5V - Enables <175mW conduction loss at 4.6A, critical for thermally constrained PCB layouts. |
| RDS(ON) (P) | 74mΩ @ VGS = –4.5V - Ensures symmetric on-resistance for balanced push-pull stage efficiency. |
| Qg (N/P) | 3.6nC / 5.9nC - Low total gate charge reduces driver power demand and enables 1MHz+ PWM operation. |
| ID (Cont) | 4.6A / –3.2A @ +25°C - Sustains peak load currents in portable backlight drivers and USB-C PD power paths. |
| TJ Range | –55°C to +150°C - Validated for under-hood automotive environments and industrial temperature cycling. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive power semiconductors including HTGB, HTRB, and ESD. |
Pinout & Package
TSOT26 package: 6-pin surface-mount, 2.9mm × 2.8mm × 0.9mm profile, matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration. |
| 2 (S1) | N-channel source | Reference node for N-MOS gate drive; tied to output or ground depending on topology. |
| 3 (G1) | N-channel gate | Logic-level input (1.8V–12V compatible); requires <3.6nC charge for full turn-on. |
| 4 (D2) | P-channel drain | Main current path for low-side P-MOSFET; connects to output node in synchronous buck stage. |
| 5 (S2) | P-channel source | Connected to input rail in low-side switch; forms common source with N-MOS for half-bridge use. |
| 6 (G2) | P-channel gate | Inverted logic interface; driven low to conduct, requiring dedicated gate driver or logic inversion. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary integration | Single TSOT26 package replaces discrete N+P pair, reducing board area by >40% and parasitic inductance. |
| Low-voltage gate drive | Operates fully enhanced at VGS = ±2.5V, enabling direct MCU GPIO control without level shifters. |
| Thermal performance | 108°C/W RθJA with 1-inch² copper pad allows 1.1W dissipation at +70°C ambient-critical for sealed enclosures. |
| Automotive qualification | AEC-Q101 qualified, PPAP-capable, and manufactured in IATF16949-certified facilities for Tier-1 supply chain compliance. |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500ppm, Sb <1000ppm), UL 94V-0 rated molding compound. |
Applications
| Backlight LED Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters with PWM dimming up to 20kHz. IC Role / Device Role / Timing Role: N-MOS as high-side switch, P-MOS as synchronous rectifier in boost-fed constant-current stage. Use Value: 35mΩ/74mΩ RDS(ON) minimizes voltage drop across both switches, preserving headroom for 3–4 LED series stacks at 300mA. |
Use Scenario: 5V-to-3.3V point-of-load conversion in ADAS camera modules with strict thermal limits. IC Role / Device Role / Timing Role: Integrated N+P pair forms compact half-bridge; N-MOS high-side, P-MOS low-side with dead-time control. Use Value: Low Qg (3.6nC/5.9nC) enables clean 2MHz switching with <10ns propagation delay mismatch, reducing output ripple. |
| USB-C Power Delivery Switch | Automotive Body Control Module |
|
Use Scenario: Bidirectional 20V/3A power path switching between legacy USB-A and USB-C ports in docking stations. IC Role / Device Role / Timing Role: N-MOS handles forward direction (source→sink), P-MOS enables reverse current flow during DRP negotiation. Use Value: Matched ±20V BVDSS and symmetrical RDS(ON) ensure identical forward/reverse conduction loss (<75mW each direction). |
Use Scenario: Controlling 12V solenoid valves and LED indicators in door module ECUs with 150°C junction rating. IC Role / Device Role / Timing Role: P-MOS as high-side load switch, N-MOS as diagnostic shunt for current sensing via source resistor. Use Value: AEC-Q101 qualification and –55°C to +150°C operation guarantee reliability across cold cranking and engine bay thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2056UVTQ | Higher RDS(ON): 48mΩ/100mΩ @ 4.5V; same TSOT26 footprint and pinout. | Lower efficiency at high current; suitable only for <2A loads where cost reduction outweighs thermal penalty. | Select when BOM cost is prioritized over thermal margin and peak efficiency is not required. |
| SI6926ADQ-T1-GE3 | Higher VDSS: ±30V; larger SO-8 package; higher Qg (12nC/15nC). | Supports wider input range but occupies 3× PCB area; slower switching limits >500kHz use. | Choose only if system requires >20V absolute maximum rating and layout space permits SO-8. |
Compared with DMC2053UVTQ, DMC2056UVTQ trades 37% higher conduction loss for lower unit cost, while SI6926ADQ-T1-GE3 sacrifices compactness and switching speed for extended voltage headroom-making DMC2053UVTQ optimal for space- and efficiency-critical 20V automotive and portable power designs.
Availability
DMC2053UVTQ is available at Aetrix Electronics and suitable for automotive body electronics, portable DC-DC converters, and USB-C power delivery systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for DMC2053UVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design and manufacturing operations certified to IATF16949 and ISO9001 standards.
The DMC2053UVTQ belongs to Diodes' automotive-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-reliability power switching in infotainment, ADAS, and body control modules.
FAQ
What is the maximum safe operating junction temperature for DMC2053UVTQ?
The absolute maximum junction temperature is +150°C per the datasheet's Thermal Characteristics table. Operation at this limit requires derating continuous current to ≤2.6A (N-channel) and ≤–2.6A (P-channel) at +70°C ambient, using the 1-inch² copper pad layout specified in Note 6. Exceeding this temperature risks permanent parametric shift or bondwire failure.
Can DMC2053UVTQ be used in a high-side N-MOS + low-side N-MOS synchronous buck configuration?
No-DMC2053UVTQ integrates one N-channel and one P-channel MOSFET, not two N-channels. Its P-channel device is optimized for high-side switching with simplified gate drive (no bootstrap circuit needed), not low-side synchronous rectification. For dual-N configurations, consider discrete N-MOS pairs or dedicated synchronous buck controllers with external N-MOS drivers.
Is the TSOT26 package of DMC2053UVTQ compatible with standard reflow profiles for lead-free soldering?
Yes-the device uses matte tin annealed terminals and is rated for JEDEC J-STD-020 Level 1 moisture sensitivity, permitting exposure to ambient indefinitely before reflow. It complies with IPC/JEDEC J-STD-020D peak reflow temperatures up to 260°C for 30 seconds, matching standard lead-free SAC305 profiles without preconditioning.
Does the AEC-Q101 qualification cover both N-channel and P-channel devices in the same package?
Yes-the qualification report DS41617 Rev. 2 explicitly states that the entire DMC2053UVTQ assembly-including both integrated MOSFET dice, interconnects, and TSOT26 molding-is subjected to AEC-Q101 stress tests (HTGB, HTRB, TC, UHAST, etc.) as a single qualified part number. No separate qualification is required for either channel.
DMC2053UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V, 440pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMC2053UVTQ-13 FAQ
1.How can I place an order for DMC2053UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2053UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2053UVTQ-13 reliable?
The price and inventory of DMC2053UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2053UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMC2053UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2053UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2053UVTQ-13?
DMC2053UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2053UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2053UVTQ-13?
For technical support, including DMC2053UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2053UVTQ-13 requirements.
6.How does Aetrix verify that DMC2053UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMC2053UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2053UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMC2053UVTQ-13?
All DMC2053UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2053UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2053UVTQ-13 part is unused and in its original packaging.
Return procedure for DMC2053UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMC2053UVTQ-13 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
