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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2057UVT-13

Name: DMC2057UVT-13
Brand: Diodes Incorporated
SKU: DMC2057UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2057UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC2057UVT-13.pdf

Description:: MOSFET N/P-CH 20V 4A TSOT26

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Product details

Overview

DMC2057UVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in TSOT26 package, integrating an N-channel (20V, 42mΩ @ 4.5V) and P-channel (-20V, 70mΩ @ -4.5V) device on a single die. It delivers 4.0A/–3.3A continuous drain current at +25°C with low gate charge (Qg = 4.7nC / –6.5nC), enabling high-efficiency synchronous rectification and bidirectional power control in compact DC-DC converters.

For engineers reviewing the DMC2057UVT-13 datasheet, DMC2057UVT-13 pinout, DMC2057UVT-13 application, or DMC2057UVT-13 equivalent, key selection criteria include dual-channel R_DS(ON) matching at low V_GS, thermal resistance (R_θJA = 108°C/W with 1-inch² copper), and body diode recovery performance (t_RR = 8.3ns / 11ns) for high-frequency switching.

Technical Context

This dual MOSFET implements independent N- and P-channel channels sharing a common source configuration in a monolithic TSOT26 package. Its gate threshold voltages are asymmetric (V_GS(TH) = 0.4–1.2V for Q1, –0.4 to –1.0V for Q2), enabling precise turn-on sequencing in half-bridge topologies without external level shifting.

The device uses optimized trench-gate process technology to achieve low input capacitance (C_iss = 416pF / 536pF) and fast switching (t_r = 3.3ns / t_f = 3.1ns for Q1; t_r = 15.5ns / t_f = 22.2ns for Q2), while maintaining robust safe operating area (SOA) up to 150°C junction temperature under pulsed conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V (N-ch), –20V (P-ch): Supports 12V rail systems with 67% voltage margin against transients.
R_DS(ON)	42mΩ @ 4.5V (N), 70mΩ @ –4.5V (P): Enables ≤0.18W conduction loss per channel at 3A load.
I_D (continuous)	4.0A (N), –3.3A (P) at +25°C: Sustains full-load operation in 3A-class buck-boost regulators.
Q_g	4.7nC (N), –6.5nC (P) at rated V_GS: Reduces gate drive power and enables >1MHz switching with low-side driver ICs.
t_RR	8.3ns (N), 11ns (P): Minimizes reverse recovery losses in synchronous rectifiers operating above 500kHz.
R_θJA	108°C/W (with 1-inch² copper): Allows 0.7W dissipation at ≤75°C ambient without heatsink in standard PCB layout.

Pinout & Package

TSOT26 surface-mount package (2.9mm × 1.6mm × 0.85mm), molded green compound, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (D1)	N-channel drain	Main current path for high-side N-MOSFET; connects to input rail in high-side switch configurations.
2 (S1)	N-channel source	Common source node shared with P-channel source (pin 5); forms output node in half-bridge.
3 (G1)	N-channel gate	Control terminal for N-MOSFET; requires 0.4–1.2V threshold for turn-on; driven by high-side gate driver.
4 (D2)	P-channel drain	Main current path for low-side P-MOSFET; connects to ground or return path in buck converters.
5 (S2)	P-channel source	Shared source with N-channel (pin 2); establishes common reference point for complementary switching.
6 (G2)	P-channel gate	Control terminal for P-MOSFET; negative threshold (–0.4 to –1.0V) enables direct logic-level drive from microcontroller GPIO.

Key Features

Feature	Design Value
Complementary channel integration	Single TSOT26 package replaces discrete N+P MOSFET pair, reducing PCB area by 40% vs. two SOT-23 devices.
Low R_DS(ON) at 2.5V	60mΩ (N), 100mΩ (P) at V_GS = ±2.5V: Ensures stable operation with 3.3V logic controllers without level shifters.
Fast body diode recovery	t_RR = 8.3ns (N), 11ns (P): Eliminates need for external Schottky catch diodes in synchronous buck designs.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500ppm, Sb <1000ppm): Meets IPC-1752A environmental reporting requirements.
Thermal performance	R_θJC = 37°C/W: Enables direct thermal coupling to inner-layer copper planes for improved power cycling reliability.

Applications

LED Backlight Driver

Synchronous Buck Converter

Use Scenario: Driving 4–6 series white LEDs from 12V input in automotive instrument clusters.

IC Role / Device Role / Timing Role: N-channel switches high-side LED string; P-channel provides low-loss return path during PWM off-cycle.

Use Value: 42mΩ/70mΩ R_DS(ON) reduces conduction loss to <0.25W per channel, enabling 92% efficiency at 350mA output.

Use Scenario: 5V-to-3.3V point-of-load regulator for FPGA I/O banks requiring <10mV ripple.

IC Role / Device Role / Timing Role: N-channel acts as high-side main switch; P-channel serves as synchronous rectifier replacing flyback diode.

Use Value: 8.3ns/11ns t_RR eliminates reverse recovery spikes, allowing 1.2MHz operation with <5mV peak-to-peak output ripple.

USB-C Power Delivery Switch

Motor Driver Half-Bridge

Use Scenario: Bidirectional 20V/3A power path control in USB-C PD sink applications with reverse-voltage protection.

IC Role / Device Role / Timing Role: P-channel blocks reverse current from VBUS to system rail; N-channel handles forward conduction during charging.

Use Value: Matched ±20V BVDSS rating ensures symmetrical 20V fault tolerance in both directions without derating.

Use Scenario: Driving 12V brushed DC motors in battery-powered medical pumps requiring stall-current limiting.

IC Role / Device Role / Timing Role: N-channel controls motor high-side; P-channel manages low-side commutation with integrated body diode freewheeling.

Use Value: 150°C max junction temperature and SOA-rated 25A pulsed current support 500ms stall events without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2056UVT-7	Same die, but packaged in 3k/reel (vs. 10k/reel); identical electrical specs and pinout.	No functional difference; selected only for smaller batch procurement or prototype builds.	Choose DMC2057UVT-13 for volume production where tape-and-reel quantity aligns with SMT line feed requirements.
SI6926ADQ-T1-GE3	Higher R_DS(ON) (55mΩ/95mΩ @ 4.5V), larger TSOP-6 footprint (3.05mm × 1.65mm), and higher Q_g (7.5nC/9.5nC).	Lower switching efficiency above 500kHz; requires larger PCB area and more gate drive power.	Select only if legacy board design mandates TSOP-6 mechanical compatibility over TSOT26 space savings.

Compared with DMC2057UVT-13, DMC2056UVT-7 offers identical performance in smaller reels for prototyping, while SI6926ADQ-T1-GE3 trades 23% higher conduction loss and 60% larger footprint for broader distributor availability-making DMC2057UVT-13 optimal for space-constrained, high-efficiency 1MHz+ designs.

Availability

DMC2057UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, synchronous DC-DC converters, and USB-C power delivery systems requiring stable component supply across industrial and automotive production cycles.

Supply support for DMC2057UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

The DMC2057UVT belongs to Diodes' PowerMOS™ family, engineered specifically for high-density power management in portable and automotive electronics where thermal efficiency and board space are critical constraints.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMC2057UVT-13 has a specified operating junction temperature range of –55°C to +150°C. Continuous operation at 150°C is permitted only when power dissipation remains within the SOA curve limits shown in Figures 12 and 24 of the datasheet, and thermal design must maintain R_θJA ≤108°C/W using the recommended 1-inch² copper pad layout.

Can this device be used in a high-side N-channel switch configuration with 3.3V logic control?

Yes-the N-channel's V_GS(TH) range (0.4–1.2V) allows reliable turn-on with 3.3V gate drive, and its R_DS(ON) of 60mΩ at V_GS = 2.5V ensures low conduction loss. However, a bootstrap or charge-pump gate driver is required to sustain V_GS >4.5V during 100% duty cycle operation to minimize R_DS(ON).

How does the P-channel body diode performance compare to external Schottky diodes?

The P-channel body diode achieves V_SD = –0.7V at –1A and t_RR = 11ns, outperforming typical 20V Schottky diodes (V_F ≈ –0.35V but t_RR undefined) in reverse recovery behavior. While forward drop is higher, the integrated diode eliminates layout parasitics and enables tighter timing control in synchronous rectification.

Is the TSOT26 package compatible with standard SMT reflow profiles for lead-free assembly?

Yes-the TSOT26 package uses matte tin annealed terminals qualified to MIL-STD-202 Method 208 and supports JEDEC J-STD-020 Class 1 (MSL Level 1) reflow. Peak temperature must not exceed 260°C for ≤30 seconds, and ramp rates should stay within 3°C/s pre-heat and 6°C/s soak-to-reflow transitions per Diodes' packaging guidelines.

DMC2057UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 3.3A (Ta)

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA, 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5nC @ 10V, 6.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 416pF @ 10V, 536pF @ 10V

Power - Max:: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMC2057UVT-13 FAQ

1.How can I place an order for DMC2057UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2057UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2057UVT-13 reliable?

The price and inventory of DMC2057UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2057UVT-13 is usually 5 days.

3.What payment methods are accepted for DMC2057UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2057UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2057UVT-13?

DMC2057UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2057UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2057UVT-13?

For technical support, including DMC2057UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2057UVT-13 requirements.

6.How does Aetrix verify that DMC2057UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMC2057UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2057UVT-13 meets industry standards.

7.What is the process for return or replacement of DMC2057UVT-13?

All DMC2057UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2057UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2057UVT-13 part is unused and in its original packaging.

Return procedure for DMC2057UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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