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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2057UVT-7

Name: DMC2057UVT-7
Brand: Diodes Incorporated
SKU: DMC2057UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2057UVT-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC2057UVT-7.pdf

Description:: MOSFET N/P-CH 20V 4A TSOT26

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Product details

Overview

DMC2057UVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 42mΩ @ V_GS=4.5V, 4.0A) and P-channel (–20V, 70mΩ @ V_GS=–4.5V, –3.3A) device for bidirectional power control. It targets high-efficiency DC-DC converters and backlighting circuits where space-constrained dual-polarity switching is required.

For engineers reviewing the DMC2057UVT datasheet, DMC2057UVT pinout, DMC2057UVT application, or DMC2057UVT equivalent, this device offers verified R_DS(ON), gate charge (Q_g = 4.7nC N-ch / 6.5nC P-ch), thermal resistance (R_θJA = 108°C/W with copper pad), and low-voltage gate drive compatibility down to 1.8V for both channels - critical for battery-powered PMIC designs.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common TSOT26 thermally optimized leadframe. Each channel features fully specified gate threshold voltage (V_GS(TH) = 0.4–1.2V for N-ch; –0.4 to –1.0V for P-ch) and guaranteed dynamic parameters including C_iss (416pF/536pF), Q_gd (1.2nC/1.3nC), and t_F/t_R (3.1ns/3.3ns N-ch; 22.2ns/15.5ns P-ch).

The device supports synchronous rectification and H-bridge configurations via its matched complementary characteristics: symmetrical |V_DSS| = 20V, overlapping V_GS operating range (±1.8V to ±4.5V), and body diode forward voltage (V_SD = 0.7–1.2V N-ch; –0.7 to –1.2V P-ch) with t_RR of 8.3ns and 11ns respectively.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	±20V - Enables use in 12V and 19V input rails without derating; supports automotive and industrial supply ranges.
R_DS(ON) @ V_GS = 4.5V	42mΩ (N), 70mΩ (P) - Delivers <125mW conduction loss at 3A, critical for thermally constrained portable DC-DC stages.
Q_g	4.7nC (N), 6.5nC (P) - Enables fast switching at >1MHz with low gate-drive power, reducing driver IC loading.
R_θJA	108°C/W (with 1-inch² copper pad) - Allows 1.1W continuous dissipation at +70°C ambient, supporting compact layout.
I_D (continuous)	4.0A (N), –3.3A (P) - Sustains peak load currents in LED drivers and point-of-load regulators without external heatsinking.
C_iss	416pF (N), 536pF (P) - Minimizes Miller effect during high-dV/dt transitions, improving noise immunity in noisy power domains.
V_GS(TH)	0.4–1.2V (N), –0.4 to –1.0V (P) - Ensures reliable turn-on from 1.8V logic, compatible with modern low-voltage microcontrollers.

Pinout & Package

Package: TSOT26 - 6-pin, surface-mount, thermally enhanced plastic package with 0.95mm profile and UL 94V-0 rated molding compound. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (D1)	N-channel drain	Main current path for high-side N-MOSFET; electrically isolated from P-channel structure.
2 (S1)	N-channel source	Reference node for N-ch gate drive; connects to ground or low-side switch node in half-bridge.
3 (G1)	N-channel gate	Control terminal requiring 0.4–1.2V threshold; low C_iss enables fast edge rates with minimal gate resistor.
4 (D2)	P-channel drain	Main current path for low-side P-MOSFET; shares thermal pad but not electrical connection with D1.
5 (S2)	P-channel source	Reference node for P-ch gate drive; typically tied to input rail in high-side switch configurations.
6 (G2)	P-channel gate	Control terminal requiring –0.4 to –1.0V threshold; polarity inversion must be handled by driver logic.

Key Features

Feature	Design Value
Complementary dual-channel integration	Single TSOT26 footprint replaces discrete N+P pair, saving ≥30% PCB area in buck-boost and H-bridge layouts.
Low R_DS(ON) at 2.5V V_GS	60mΩ (N), 100mΩ (P) - Maintains efficiency in deep-discharge battery operation (e.g., 2.5V Li-ion cutoff).
Ultra-low gate leakage	±100nA max at ±12V/±8V - Prevents unintended turn-on in always-on power domains and reduces standby current.
Halogen- and antimony-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb - Meets IPC-1752A reporting requirements for RoHS 3 and automotive PPAP submissions.
Fast reverse recovery	t_RR = 8.3ns (N), 11ns (P) - Reduces switching losses and EMI in synchronous rectifiers operating above 500kHz.

Applications

LED Backlight Driver

USB-C Power Delivery Switch

Use Scenario: Driving white LED strings in thin-profile displays using PWM-controlled buck converter with synchronous rectification.

IC Role / Device Role / Timing Role: N-channel acts as synchronous rectifier; P-channel serves as high-side PWM switch controlling LED current path.

Use Value: 42mΩ/70mΩ R_DS(ON) minimizes conduction loss across 3–5A LED loads, extending battery life by >8% versus discrete solutions.

Use Scenario: Bidirectional 20V/3A power path switching in USB-C PD 3.0 sink/source negotiation circuits.

IC Role / Device Role / Timing Role: Complementary pair forms compact back-to-back switch enabling reverse-current blocking and voltage-level translation.

Use Value: Matched V_GS(TH) and low Q_g ensure <100ns transition between source/sink modes, meeting USB-C PD timing compliance.

Portable DC-DC Converter

Industrial Sensor Power Sequencer

Use Scenario: Step-down regulator for FPGA core voltage (1.2V@4A) in handheld test equipment powered by single-cell Li-ion.

IC Role / Device Role / Timing Role: N-channel as low-side switch; P-channel as high-side switch in synchronous buck topology with 1.8V gate drive.

Use Value: 1.8V-compatible V_GS(TH) allows direct MCU GPIO control, eliminating level-shifter components and reducing BOM count.

Use Scenario: Controlled power-up sequencing of analog front-end (AFE), ADC, and wireless transceiver in condition-monitoring nodes.

IC Role / Device Role / Timing Role: Dual MOSFET isolates rail domains and enforces strict power-on order via independent gate control signals.

Use Value: Independent gate terminals (G1/G2) enable precise timing skew (<50ns) between domain enables, preventing latch-up in mixed-signal ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2047UVT-7	Higher R_DS(ON): 50mΩ/90mΩ @ 4.5V; lower I_D: 3.5A/–2.8A; same TSOT26 package.	Reduced efficiency in high-current DC-DC stages; suitable only for ≤2.5A loads.	Select when cost sensitivity outweighs conduction loss; verify thermal margin at full load.
SI6926ADQ-T1-GE3	Asymmetric configuration: N-ch 30V/32mΩ, P-ch 20V/100mΩ; higher Q_g (7.5nC/12nC); SO-8 package.	Larger footprint; unsuitable for ultra-thin designs; requires separate thermal management for P-ch.	Choose only if 30V N-ch rating is mandatory; avoid in space-constrained or high-frequency (>1MHz) designs.

Compared with DMC2057UVT, DMC2047UVT sacrifices 15% conduction efficiency for lower cost, while SI6926ADQ trades compactness and balanced performance for higher voltage headroom - making DMC2057UVT optimal for 20V-class, area-sensitive synchronous converters.

Availability

DMC2057UVT is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and portable DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for DMC2057UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.

The DMC2057UVT belongs to Diodes' advanced complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in battery-powered and portable electronics.

FAQ

What is the maximum safe operating junction temperature for DMC2057UVT?

The absolute maximum junction temperature is +150°C, validated across the full –55°C to +150°C storage and operating range. Thermal design must maintain T_J ≤150°C under worst-case conditions, using the 108°C/W R_θJA value measured on FR-4 with 1-inch² copper pad per the datasheet's Note 6 layout.

Can DMC2057UVT operate reliably with 1.8V gate drive on both channels?

Yes: V_GS(TH) is specified from 0.4V to 1.2V (N-ch) and –0.4V to –1.0V (P-ch), and R_DS(ON) is characterized down to V_GS = 1.8V (50mΩ N-ch, 113mΩ P-ch). This enables direct interface with 1.8V GPIOs without level shifters in low-power portable systems.

Is the TSOT26 package lead-free and RoHS-compliant?

Yes: DMC2057UVT is fully RoHS 3 compliant (2015/863/EU), lead-free, halogen-free, and antimony-free per Diodes' "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb). Terminal finish is matte tin annealed over copper leadframe, solderable per MIL-STD-202 Method 208.

How does the body diode performance compare between the N- and P-channel sections?

The N-channel body diode has V_SD = 0.7–1.2V at 1A and t_RR = 8.3ns; the P-channel body diode has V_SD = –0.7 to –1.2V at –1A and t_RR = 11ns. Both support synchronous rectification, but the N-ch diode offers faster recovery and lower forward drop - advantageous in high-frequency buck topologies.

DMC2057UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 3.3A (Ta)

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA, 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5nC @ 10V, 6.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 416pF @ 10V, 536pF @ 10V

Power - Max:: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMC2057UVT-7 FAQ

1.How can I place an order for DMC2057UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2057UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2057UVT-7 reliable?

The price and inventory of DMC2057UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2057UVT-7 is usually 5 days.

3.What payment methods are accepted for DMC2057UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2057UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2057UVT-7?

DMC2057UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2057UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2057UVT-7?

For technical support, including DMC2057UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2057UVT-7 requirements.

6.How does Aetrix verify that DMC2057UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMC2057UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2057UVT-7 meets industry standards.

7.What is the process for return or replacement of DMC2057UVT-7?

All DMC2057UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2057UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2057UVT-7 part is unused and in its original packaging.

Return procedure for DMC2057UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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