My Inquiry
My Account
Diodes Incorporated DMC25D0UVT-13
- Part No.:
- DMC25D0UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC25D0UVT-13.pdf
- Description:
- MOSFET N/P-CH 25V/30V TSOT23
- Quantity:
- Payment:
- Shipping:
Inventory:8,223
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMC25D0UVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in TSOT26 package, integrating one N-channel (25V, 4Ω @ 4.5V) and one P-channel (–30V, 80mΩ @ –12V) device for bidirectional power control. It delivers low RDS(ON), fast switching, and ESD-protected gate (>6kV HBM), targeting compact DC-DC converters and load-switching functions in space-constrained industrial and consumer power modules.
For engineers reviewing the DMC25D0UVT-13 datasheet, DMC25D0UVT-13 pinout, DMC25D0UVT-13 application, or DMC25D0UVT-13 equivalent, key selection criteria include dual-channel voltage polarity support, thermal resistance (RθJA = 101°C/W), gate charge asymmetry (Qg = 0.4nC / 21nC), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing a common source configuration in a single TSOT26 package. The N-channel device operates with VGS(TH) = 0.65–1.5V and supports 0.4A continuous drain current at 4.5V drive, while the P-channel uses VGS(TH) = –0.5 to –1.5V and handles –3.2A at –10V gate bias.
Thermal design is constrained by RθJA = 101°C/W (steady-state) and RθJC = 37°C/W, requiring careful PCB copper layout per FR-4 2oz specification. Dynamic performance includes asymmetric gate capacitance (Ciss = 26.2pF / 854pF) and turn-off delay disparity (tD(OFF) = 7.7ns / 61.4ns), necessitating matched gate-drive timing in synchronous buck or half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS (Q1/Q2) | 25V / –30V - Defines maximum blocking voltage for high-side N-channel and low-side P-channel operation in buck or load-switch configurations. |
| RDS(ON) | 4Ω @ 4.5V (Q1), 80mΩ @ –12V (Q2) - Determines conduction loss in 12V/5V rail switching; Q2 dominates power loss in P-channel high-side applications. |
| ID Continuous | 0.4A (Q1), –3.2A (Q2) - Sets maximum steady-state current capability; Q2 enables higher-load P-channel switching where gate drive voltage exceeds supply. |
| Qg | 0.4nC (Q1), 21nC (Q2) - Drives gate driver sizing: Q2 requires ~50× more charge than Q1, demanding asymmetric drive strength for balanced switching transitions. |
| Ciss | 26.2pF (Q1), 854pF (Q2) - Impacts high-frequency switching efficiency and EMI; Q2's large input capacitance limits usable PWM frequency without excessive gate drive loss. |
| TJ Range | –55°C to +150°C - Enables operation in extended-temperature environments such as automotive under-hood or industrial motor-control enclosures. |
| AEC-Q101 | Qualified - Confirms suitability for automotive power management systems requiring stress-tested reliability beyond standard commercial grade. |
Pinout & Package
Package: TSOT26 - 6-pin thermally enhanced surface-mount package with exposed drain pad (Q1 Drain, Q2 Drain), molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | N-channel gate | Control input for Q1; requires ≥4.5V to achieve 4Ω RDS(ON); ESD-protected to >6kV HBM. |
| Pin 2 (S1/S2) | Common source node | Shared source connection between Q1 and Q2; forms return path for bidirectional current flow in half-bridge or load-switch topologies. |
| Pin 3 (D1) | N-channel drain | Exposed pad (top-side); primary heat dissipation path; connects to high-side output or input rail in buck converter. |
| Pin 4 (G2) | P-channel gate | Control input for Q2; driven negative relative to source; threshold –0.5V to –1.5V enables logic-level compatibility with inverted drive. |
| Pin 5 (D2) | P-channel drain | Exposed pad (top-side); second thermal path; used for low-side switching or reverse-polarity protection where Q2 sinks current to ground. |
| Pin 6 (S1/S2) | Common source node | Second connection to shared source; ensures low-inductance return path; must be routed with minimum loop area for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Single-package integration of matched N- and P-channel MOSFETs eliminates inter-device timing skew and reduces PCB footprint by >40% vs discrete solutions. |
| Low RDS(ON) asymmetry | Q1 (4Ω) and Q2 (80mΩ) optimized for different roles: Q1 for low-current control logic, Q2 for high-current power path-enabling efficient rail switching without external current balancing. |
| ESD-protected gate (Q1) | Robust >6kV Human Body Model rating on N-channel gate allows direct interface with microcontroller GPIOs without external transient suppression. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock-supports use in infotainment power rails and body-control modules. |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets EU RoHS 2 and automotive ELV directives for sustainable manufacturing. |
Applications
| DC-DC Buck Converter | Reverse-Polarity Protection |
|---|---|
|
Use Scenario: 12V-to-5V step-down conversion in automotive accessory modules with tight thermal constraints. IC Role / Device Role / Timing Role: Q1 acts as high-side synchronous rectifier; Q2 serves as low-side switch with gate driven by dedicated controller; complementary timing minimizes shoot-through risk. Use Value: Combined RDS(ON) and low Qg reduce conduction and switching losses, achieving >92% efficiency at 1A load with minimal heatsinking. |
Use Scenario: Protecting USB-C PD ports and battery management ICs from accidental reverse connection in portable medical devices. IC Role / Device Role / Timing Role: Q2 configured as high-side P-channel switch; Q1 disabled or used for status monitoring; source tied to input, drain to protected load. Use Value: 80mΩ RDS(ON) at –12V ensures <100mV drop at 1.25A, preserving voltage headroom for sensitive analog front-ends. |
| Load Switch for Industrial I/O | Hot-Swap Controller Interface |
|
Use Scenario: Enabling/disabling 3.3V sensor rails in programmable logic controllers with inrush current limiting. IC Role / Device Role / Timing Role: Q1 used as controlled enable switch; Q2 provides active pull-down during shutdown to prevent floating nodes; common-source architecture simplifies gate drive sequencing. Use Value: Fast tF = 3.7ns (Q1) and tR = 3.3ns (Q2) allow sub-microsecond switching, supporting dynamic power gating in real-time control loops. |
Use Scenario: Isolating backplane slots in modular test equipment during live insertion/removal. IC Role / Device Role / Timing Role: Q2 functions as main power switch; Q1 monitors VGS or leakage to detect fault conditions; shared thermal pad enables accurate junction temperature feedback. Use Value: RθJC = 37°C/W allows direct thermal coupling to heatsink, enabling sustained 2.6A operation at TA = 85°C without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Higher VDSS (30V/–30V), lower RDS(ON) (2.2Ω/45mΩ), but larger TSOT26 footprint and no AEC-Q101 rating. | Preferred for 24V industrial systems needing tighter RDS(ON) tolerance, but unsuitable for automotive qualified designs. | Select when higher voltage margin and lower conduction loss outweigh qualification requirements. |
| SI6926ADQ-T1-GE3 | Same TSOT26 package, but Q1/Q2 RDS(ON) = 3.5Ω/60mΩ at 4.5V/–4.5V; lacks ESD protection on N-channel gate. | Better suited for cost-sensitive consumer power banks where gate robustness is secondary to BOM count reduction. | Choose for non-automotive applications where gate ESD immunity is managed externally and thermal budget permits higher RDS(ON). |
Compared with DMC25D0UVT-13, DMC2038LSD-7 offers superior voltage rating and conduction efficiency but sacrifices automotive qualification, while SI6926ADQ-T1-GE3 reduces gate drive complexity at the expense of ESD resilience and thermal performance-making DMC25D0UVT-13 optimal for AEC-Q101-compliant, thermally constrained dual-rail systems.
Availability
DMC25D0UVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, reverse-polarity protection circuits, and industrial load-switching applications requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.
Supply support for DMC25D0UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for automotive, industrial, and consumer markets.
The DMC series targets space-constrained power switching applications, with DMC25D0UVT-13 specifically engineered to deliver AEC-Q101-qualified complementary MOSFET performance in ultra-thin TSOT26 packaging for next-generation automotive body electronics and portable power systems.
FAQ
What is the maximum continuous drain current for each channel at 25°C?
The N-channel (Q1) supports 0.4A continuous drain current at VGS = 4.5V and TA = 25°C, while the P-channel (Q2) delivers –3.2A at VGS = –10V under identical conditions. Derating applies above 25°C per RθJA = 101°C/W; at 85°C ambient, Q2 is limited to approximately –2.6A.
Can DMC25D0UVT-13 be used in a synchronous buck converter?
Yes-its complementary N/P-channel structure supports synchronous rectification: Q1 as high-side switch and Q2 as low-side switch. However, gate drive must account for asymmetric Qg (0.4nC vs 21nC) and VGS(TH) polarity; a dedicated dual-output gate driver with independent voltage rails is required to avoid shoot-through and ensure clean transitions.
Is the TSOT26 package lead-free and RoHS compliant?
Yes-DMC25D0UVT-13 uses matte tin annealed over copper leadframe and fully complies with EU Directive 2011/65/EU (RoHS 2). It contains no intentionally added lead, bromine, chlorine, or antimony above defined thresholds (<900ppm Br/Cl, <1000ppm Sb), meeting Diodes Incorporated's "Green" product definition.
How does the ESD protection on the N-channel gate impact system-level design?
The N-channel gate features >6kV Human Body Model ESD protection, allowing direct connection to microcontroller GPIOs without external TVS diodes in most board-level environments. This reduces BOM count and layout area but does not eliminate need for system-level ESD protection on exposed connectors or cables feeding into the MOSFET-controlled circuit.
DMC25D0UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 25V, 30V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA, 3.2A
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 26.2pF @ 10V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMC25D0UVT-13 FAQ
1.How can I place an order for DMC25D0UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC25D0UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC25D0UVT-13 reliable?
The price and inventory of DMC25D0UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC25D0UVT-13 is usually 5 days.
3.What payment methods are accepted for DMC25D0UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC25D0UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC25D0UVT-13?
DMC25D0UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC25D0UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC25D0UVT-13?
For technical support, including DMC25D0UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC25D0UVT-13 requirements.
6.How does Aetrix verify that DMC25D0UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMC25D0UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC25D0UVT-13 meets industry standards.
7.What is the process for return or replacement of DMC25D0UVT-13?
All DMC25D0UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC25D0UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC25D0UVT-13 part is unused and in its original packaging.
Return procedure for DMC25D0UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMC25D0UVT-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
