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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC25D0UVT-7

Name: DMC25D0UVT-7
Brand: Diodes Incorporated
SKU: DMC25D0UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC25D0UVT-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC25D0UVT-7.pdf

Description:: MOSFET N/P-CH 25V/30V TSOT23

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Product details

Overview

DMC25D0UVT-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (25V, 4Ω @ 4.5V) and P-channel (−30V, 80mΩ @ −12V) device for bidirectional power control. It delivers low R_DS(ON), fast switching (t_D(ON) = 3 ns Q1 / 3.5 ns Q2), and ESD-protected gate (>6 kV HBM), targeting compact DC-DC converters and load-switching circuits.

For engineers reviewing the DMC25D0UVT-7 datasheet, DMC25D0UVT-7 pinout, DMC25D0UVT-7 application, or DMC25D0UVT-7 equivalent, this dual-channel MOSFET supports high-efficiency power management where space-constrained layouts require matched N+P channel performance with thermal robustness (R_θJA = 101°C/W) and AEC-Q101 qualification.

Technical Context

This device implements two independent enhancement-mode MOSFETs-Q1 (N-channel, V_BR_DSS = 25 V, R_DS(ON) = 3.8 Ω typ @ V_GS = 4.5 V) and Q2 (P-channel, V_BR_DSS = −30 V, R_DS(ON) = 59 mΩ typ @ V_GS = −12 V)-in a monolithic TSOT26 leadframe. Gate drive thresholds are asymmetric: V_GS(TH) = 0.65–1.5 V (Q1) and −0.5 to −1.5 V (Q2), enabling direct logic-level control of both channels.

Dynamic behavior is optimized for switching efficiency: Q1 exhibits C_iss = 26.2 pF and Qg = 0.4 nC @ 4.5 V; Q2 shows C_iss = 854 pF and Qg = 10 nC @ −4.5 V. Thermal design is supported by R_θJC = 37°C/W and operation up to +150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR_DSS (Q1)	25 V - Withstands up to 25 V drain-source voltage before avalanche conduction in N-channel device.
R_DS(ON) (Q1 @ 4.5 V)	3.8 Ω typ - Enables ≤0.4 A continuous current with <0.6 V conduction loss at rated ID.
R_DS(ON) (Q2 @ −12 V)	59 mΩ typ - Supports −3.2 A continuous current with <0.2 V conduction drop in P-channel path.
Q_g (Q2 @ −4.5 V)	10 nC - Determines gate drive energy required for full turn-on; impacts switching loss in high-frequency DC-DC stages.
T_J max	+150°C - Specifies absolute maximum junction temperature for reliable operation under sustained power dissipation.
E_SD rating	>6 kV HBM - Protects gate oxide against electrostatic discharge during board assembly and handling.
P_D	1.2 W - Maximum steady-state power dissipation on FR-4 PCB with 1-inch² copper pad.

Pinout & Package

Package: TSOT26 - ultra-thin, 6-pin surface-mount package (2.90 × 2.80 × 1.00 mm), RoHS-compliant, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	Main current output node for high-side or low-side N-MOS switch; connects to input or output rail depending on topology.
S1	N-channel source	Reference node for N-channel gate drive; tied to ground or switched node in synchronous buck configurations.
G1	N-channel gate	Control terminal requiring ≥0.65 V to initiate conduction; logic-level compatible with 3.3 V/5 V microcontrollers.
D2	P-channel drain	Main current output node for P-MOS switch; used in high-side load switches or complementary output stages.
S2	P-channel source	Typically connected to supply rail (V_IN) in high-side applications; defines reference for P-channel gate bias.
G2	P-channel gate	Control terminal requiring negative V_GS; driven relative to S2 to achieve full enhancement (e.g., 0 V gate = ON when S2 = V_IN).

Key Features

Feature	Design Value
Complementary N+P pair in one package	Reduces PCB footprint by eliminating discrete pairing; ensures matched thermal and timing behavior between channels.
Low R_DS(ON) asymmetry	Q1 (4 Ω) and Q2 (80 mΩ) optimized for different current/voltage roles-enabling efficient high-side P-MOS and low-side N-MOS in half-bridge topologies.
ESD-protected gate (Q1)	Withstands >6 kV per Human Body Model-eliminates need for external gate protection in most consumer and industrial assembly environments.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, humidity testing, and HTOL-suitable for under-hood and infotainment power rails.
Lead-free & halogen-free	Meets EU RoHS 2011/65/EU and Diodes Inc.'s "Green" standard (<900 ppm Br/Cl, <1000 ppm Sb)-compliant for eco-sensitive end markets.

Applications

DC-DC Converter

Load Switch

Use Scenario: Synchronous buck converter in portable electronics requiring compact 3.3 V or 5 V regulation from Li-ion battery input.

IC Role / Device Role: Q1 serves as low-side synchronous rectifier; Q2 acts as high-side main switch or reverse-polarity protection element.

Use Value: Combined R_DS(ON) minimizes conduction loss across duty cycle range; fast t_F = 3.7 ns (Q1) reduces switching loss at 1–2 MHz operation.

Use Scenario: USB-powered peripheral with overcurrent and reverse-voltage protection.

IC Role / Device Role: Q2 configured as high-side P-MOS switch; Q1 provides active discharge path or status monitoring via source sensing.

Use Value: Low 80 mΩ R_DS(ON) limits voltage drop to <0.26 V at 3.2 A; integrated ESD protection eliminates external TVS diodes on enable line.

Power Management IC Interface

Automotive Body Control Module

Use Scenario: Voltage rail sequencing and isolation in FPGA or SoC power domains with independent enable control.

IC Role / Device Role: Dual-channel enables independent ON/OFF control of VCCINT and VCCAUX rails using shared logic-level signals.

Use Value: Matched thermal response (T_J = −55 to +150°C) ensures stable timing across power-up/down sequences without derating.

Use Scenario: Door module LED driver and sensor interface with fault-tolerant power gating.

IC Role / Device Role: Q2 controls 12 V lighting load; Q1 monitors current via sense-FET configuration or provides diagnostic feedback.

Use Value: AEC-Q101 qualification guarantees operation at 105°C ambient; R_θJA = 101°C/W supports natural convection cooling in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2041UFDB-7	Lower V_BR_DSS (20 V Q1 / −20 V Q2); higher R_DS(ON) (5.5 Ω / 110 mΩ); same TSOT26 package.	Better suited for ≤3.6 V input systems (e.g., single-cell Li-ion); less margin for 5 V rail transients.	Select when cost sensitivity outweighs voltage headroom needs and thermal budget allows higher R_DS(ON).
SI6926ADQ-T1-GE3	Higher V_BR_DSS (30 V Q1 / −30 V Q2); lower Q_g (Q2 = 7.5 nC @ −4.5 V); larger SO-8 package.	Supports wider input ranges (e.g., 24 V industrial); requires more PCB area but offers better gate drive efficiency.	Choose when system voltage exceeds 25 V or when layout permits SO-8 and lower gate charge is critical for <500 kHz switching.

Compared with DMC25D0UVT-7, DMC2041UFDB-7 trades voltage margin for cost in low-voltage portable designs, while SI6926ADQ-T1-GE3 provides higher voltage capability and lower Q_g at the expense of package size-making DMC25D0UVT-7 optimal for space-constrained 5 V–12 V automotive and industrial power rails.

Availability

DMC25D0UVT-7 is available at Aetrix Electronics and suitable for DC-DC converters, load switches, and automotive body control modules requiring stable component supply, AEC-Q101 compliance, and TSOT26 footprint consistency.

Supply support for DMC25D0UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DMC25D0UVT-7 belongs to Diodes' complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion and load switching where matched N+P characteristics, low thermal resistance, and automotive qualification are mandatory.

FAQ

What is the maximum continuous drain current for the P-channel device at V_GS = −4.5 V?

The P-channel MOSFET (Q2) supports −2.6 A continuous drain current at V_GS = −4.5 V and T_A = +25°C, with R_DS(ON) = 125 mΩ max. This rating assumes operation on a standard FR-4 PCB with 2 oz copper and a 1-inch² thermal pad; derating applies above +70°C ambient.

Can the N-channel and P-channel devices be driven independently with separate gate signals?

Yes-D1/S1/G1 and D2/S2/G2 are fully isolated terminals. G1 and G2 accept independent logic-level signals: G1 referenced to S1 (0–4.5 V), G2 referenced to S2 (0 to −4.5 V relative to S2). No internal connection exists between the two MOSFETs beyond shared package thermal mass.

Is the DMC25D0UVT-7 suitable for hot-swap applications?

It is not recommended for standalone hot-swap control due to lack of integrated slew-rate control, current limiting, or fault reporting. However, it can serve as the main pass element in a discrete hot-swap circuit when paired with an external controller (e.g., LTC4215) that manages gate ramping and overcurrent shutdown.

Does the TSOT26 package support automated optical inspection (AOI) after reflow?

Yes-the TSOT26's exposed copper leadframe and defined solder fillet geometry (per J-STD-020 Level 1) are compatible with standard AOI systems. Diodes' recommended pad layout (AP02001) ensures consistent solder joint contrast and minimal shadowing for reliable defect detection.

DMC25D0UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 25V, 30V

Current - Continuous Drain (Id) @ 25°C:: 400mA, 3.2A

Rds On (Max) @ Id, Vgs:: 4Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.7nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 26.2pF @ 10V

Power - Max:: 1.2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-23-6

DMC25D0UVT-7 FAQ

1.How can I place an order for DMC25D0UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC25D0UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC25D0UVT-7 reliable?

The price and inventory of DMC25D0UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC25D0UVT-7 is usually 5 days.

3.What payment methods are accepted for DMC25D0UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC25D0UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC25D0UVT-7?

DMC25D0UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC25D0UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC25D0UVT-7?

For technical support, including DMC25D0UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC25D0UVT-7 requirements.

6.How does Aetrix verify that DMC25D0UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMC25D0UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC25D0UVT-7 meets industry standards.

7.What is the process for return or replacement of DMC25D0UVT-7?

All DMC25D0UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC25D0UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC25D0UVT-7 part is unused and in its original packaging.

Return procedure for DMC25D0UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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