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Diodes Incorporated DMC25D1UVT-13
- Part No.:
- DMC25D1UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC25D1UVT-13.pdf
- Description:
- MOSFET N/P-CH 25V/12V TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:8,972
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Product details
Overview
DMC25D1UVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (25V, 4Ω @ 4.5V) and P-channel (−12V, 55mΩ @ −4.5V) device for bidirectional load switching. It delivers 0.5A continuous drain current on the N-channel side and −3.9A on the P-channel side, with ESD-protected gates and low input capacitance (27.6pF/9.7pF), enabling high-efficiency DC-DC converter and power management applications.
For engineers reviewing the DMC25D1UVT-13 datasheet, DMC25D1UVT-13 pinout, DMC25D1UVT-13 application, or DMC25D1UVT-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at low gate drive (−2.5V/−4.5V for P-ch, +4.5V for N-ch), thermal resistance (RθJA = 100°C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection other than substrate isolation. The N-channel device operates with positive VGS threshold (0.65–1.5V), while the P-channel requires negative gate bias (−0.35 to −1.5V) and exhibits higher gate charge (24.5nC vs. 0.4nC) and slower switching (tD(OFF) = 9.8µs vs. 5.7ns).
Both channels feature integrated body diodes with forward voltage of 0.76V (N-ch) and −1.2V (P-ch) at rated current, and are characterized for operation across −55°C to +150°C junction temperature. The TSOT26 package supports surface-mount assembly with matte tin-plated terminals and J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS (Q1) | 25V - Maximum blocking voltage for N-channel before avalanche conduction |
| VDSS (Q2) | −12V - Absolute maximum reverse drain-source voltage for P-channel |
| RDS(ON) (Q1) | 4Ω @ VGS = 4.5V - On-resistance determines I²R loss in high-side switch paths |
| RDS(ON) (Q2) | 55mΩ @ VGS = −4.5V - Enables efficient low-side or reverse-polarity protection at low gate drive |
| Qg (Q1) | 0.4nC - Low gate charge enables fast turn-on with minimal driver power consumption |
| Qg (Q2) | 24.5nC - Higher gate charge necessitates robust gate driver design for <10µs switching |
| PD | 1.3W - Power dissipation limit at TA = 25°C on FR-4 board with 1in² copper |
| RθJA | 100°C/W - Thermal resistance defines junction-to-ambient temperature rise per watt |
Pinout & Package
TSOT26 package: 6-pin, surface-mount, lead-free molded plastic case (UL 94V-0), 0.013g weight, 1.00mm height max, 2.90mm × 2.80mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Control terminal for Q1; accepts 0–8V logic-level drive with ±100nA leakage |
| 2 (S1) | N-channel source | Reference node for Q1; tied to ground or low-side return path in half-bridge |
| 3 (D1) | N-channel drain | High-side output node; connects to input rail in load-switch or buck high-side position |
| 4 (D2) | P-channel drain | Common drain node shared with Q1 drain in complementary configuration |
| 5 (S2) | P-channel source | Reference node for Q2; typically connected to VOUT or regulated bus |
| 6 (G2) | P-channel gate | Control terminal for Q2; driven negative relative to S2 for turn-on |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Single-package integration of matched N+P MOSFETs eliminates layout mismatch and reduces PCB area by >40% vs. discrete solutions |
| AEC-Q101 qualification | Validated for automotive power management including infotainment and body control modules requiring −40°C to +125°C ambient operation |
| Low RDS(ON) at low VGS | P-channel delivers 55mΩ at −4.5V, enabling direct microcontroller GPIO drive without level-shifting circuitry |
| ESD-protected gate | Human-body model rating >2kV ensures robustness during handling and board assembly without external protection diodes |
| Green compound packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets automotive OEM environmental compliance requirements |
Applications
| USB Power Delivery Switching | Automotive Body Control Module |
|---|---|
|
Use Scenario: Bidirectional 5V/3A USB Type-C port with overvoltage and reverse-current protection. IC Role / Device Role / Timing Role: Q1 acts as high-side enable switch; Q2 provides reverse-polarity and backfeed blocking on VBUS line. Use Value: Dual-channel integration eliminates need for separate N/P MOSFETs and gate drivers, reducing BOM count by two components and saving 2.5mm² PCB area. |
Use Scenario: Smart load switch for 12V accessory circuits (e.g., mirror heaters, seat controls) with fault reporting. IC Role / Device Role / Timing Role: Q2 serves as low-side controlled switch; Q1 monitors current via sense resistor in series with S1. Use Value: Matched thermal tracking between channels enables accurate current sensing without external temperature compensation. |
| Portable DC-DC Buck Converter | Industrial Sensor Node Power Gating |
|
Use Scenario: 3.3V/1A synchronous buck regulator for FPGA core supply in battery-powered test equipment. IC Role / Device Role / Timing Role: Q1 functions as high-side synchronous rectifier; Q2 replaces Schottky catch diode to reduce conduction loss. Use Value: 55mΩ P-channel RDS(ON) cuts diode forward drop loss by 65% versus 0.4V Schottky, improving efficiency from 86% to 91% at full load. |
Use Scenario: Ultra-low-quiescent-power sensor hub (e.g., temperature/humidity) with wake-on-event capability. IC Role / Device Role / Timing Role: Q1 enables main system rail; Q2 isolates backup RTC domain during deep-sleep mode. Use Value: Total gate leakage <100nA ensures <1µA system standby current, extending 2000mAh Li-ion battery life to >10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower VDSS: Q1 = 20V, Q2 = −8V; RDS(ON) Q2 = 80mΩ @ −4.5V | Rated for ≤6V systems only; unsuitable for 12V automotive or 5V USB PD where 12V transients occur | Select when operating exclusively at ≤3.3V logic rails and space-constrained consumer wearables |
| SI6926ADQ-T1-GE3 | Higher RDS(ON): Q2 = 100mΩ @ −4.5V; Qg Q2 = 32nC; no AEC-Q101 qualification | Lacks automotive qualification and thermal performance margin (RθJA = 125°C/W); higher switching loss | Acceptable for cost-sensitive industrial IoT gateways where AEC-Q101 is not mandated |
Compared with DMC25D1UVT-13, DMC2038LVT-7 trades voltage headroom for lower gate charge (0.25nC), while SI6926ADQ-T1-GE3 offers wider availability but sacrifices 45% higher conduction loss and lacks automotive reliability validation.
Availability
DMC25D1UVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, and portable power management systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMC25D1UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMC series targets high-reliability power management with emphasis on low-RDS(ON), AEC-Q101 qualification, and green packaging-designed specifically for automotive, industrial, and portable power applications demanding compact, thermally efficient switching.
FAQ
What is the maximum safe operating voltage for the P-channel device in DMC25D1UVT-13?
The P-channel MOSFET has a guaranteed VDSS rating of −12V, meaning it can safely block up to 12V in reverse polarity without breakdown. Operation above this voltage risks avalanche failure, even briefly. For 12V automotive systems, derating to ≤10V is recommended to accommodate load-dump transients per ISO 7637-2.
Can DMC25D1UVT-13 be used in a synchronous buck converter without external gate drivers?
Yes-the N-channel gate accepts standard 3.3V/5V logic levels (VGS(TH) = 0.65–1.5V), and the P-channel turns on fully at −4.5V, which many microcontrollers support via dedicated gate-drive pins or simple inverter circuits. However, due to Q2's 24.5nC gate charge, slew rate must be limited to avoid EMI; a 10Ω series gate resistor is recommended.
Does the TSOT26 package support reflow soldering per JEDEC J-STD-020?
Yes-DMC25D1UVT-13 is rated for Moisture Sensitivity Level 1 (MSL-1), permitting unlimited floor life and standard Pb-free reflow profiles (peak 260°C, 30 seconds). The matte tin finish ensures reliable wetting, and the 0.95mm pitch allows compatibility with standard 0.5mm stencil apertures.
How does the body diode forward voltage affect reverse-current protection in load-switch applications?
The P-channel body diode has VSD = −1.2V at −0.6A, providing inherent reverse-current blocking when the source is biased higher than the drain. In a 12V system, this limits reverse leakage to <1µA below −0.7V, eliminating need for external Schottky diodes-reducing cost and footprint while maintaining >60dB reverse isolation at 100kHz.
DMC25D1UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 25V, 12V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA, 3.9A
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27.6pF @ 10V
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMC25D1UVT-13 FAQ
1.How can I place an order for DMC25D1UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC25D1UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC25D1UVT-13 reliable?
The price and inventory of DMC25D1UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC25D1UVT-13 is usually 5 days.
3.What payment methods are accepted for DMC25D1UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC25D1UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC25D1UVT-13?
DMC25D1UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC25D1UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC25D1UVT-13?
For technical support, including DMC25D1UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC25D1UVT-13 requirements.
6.How does Aetrix verify that DMC25D1UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMC25D1UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC25D1UVT-13 meets industry standards.
7.What is the process for return or replacement of DMC25D1UVT-13?
All DMC25D1UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC25D1UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC25D1UVT-13 part is unused and in its original packaging.
Return procedure for DMC25D1UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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