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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC25D1UVT-7

Name: DMC25D1UVT-7
Brand: Diodes Incorporated
SKU: DMC25D1UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC25D1UVT-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC25D1UVT-7.pdf

Description:: MOSFET N/P-CH 25V/12V TSOT26

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Product details

Overview

DMC25D1UVT-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in TSOT26 package, integrating an N-channel (25V, 4Ω @ 4.5V) and P-channel (−12V, 55mΩ @ −4.5V) device for bidirectional load switching. It delivers low R_DS(ON), fast switching (t_F = 4.3ns / 6.5µs), and ESD-protected gates, enabling compact DC-DC converter power stages and dual-rail load switches in space-constrained portable electronics.

For engineers reviewing the DMC25D1UVT-7 datasheet, DMC25D1UVT-7 pinout, DMC25D1UVT-7 application, or DMC25D1UVT-7 equivalent, this dual-channel MOSFET supports high-efficiency power management where simultaneous high-side and low-side control with matched thermal behavior and gate drive compatibility is required - especially in battery-powered buck converters and USB port protection circuits.

Technical Context

This device integrates two discrete enhancement-mode MOSFETs-Q1 (N-channel, V_DS = 25V, R_DS(ON) = 4Ω @ V_GS = 4.5V) and Q2 (P-channel, V_DS = −12V, R_DS(ON) = 55mΩ @ V_GS = −4.5V)-in a single TSOT26 package with shared thermal path. Its gate threshold voltages are asymmetric (V_GS(TH) = +0.65–1.5V for Q1; −0.35 to −1.5V for Q2), requiring independent gate biasing for optimal conduction control.

The structure enables synchronous rectification in buck topologies and complementary switching in load-switch ICs. Dynamic parameters include low C_iss (27.6pF / 9.7pF), low Q_g (0.4nC / 24.5nC), and fast turn-off (t_D(OFF) = 5.7ns / 9.8µs), supporting operation up to ~1MHz with minimal switching loss in both channels.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS (Q1/Q2)	25V / −12V - Supports input rails up to 24V logic-level systems and 12V automotive auxiliary loads.
R_DS(ON) @ V_GS	4Ω @ 4.5V (Q1); 55mΩ @ −4.5V (Q2) - Enables <100mW conduction loss at 0.5A/3.9A, critical for thermally limited PCBs.
I_D Continuous	0.5A (Q1); −3.9A (Q2) - Matches typical current requirements of USB load switches and PMIC output stages.
Q_g Total	0.4nC (Q1); 24.5nC (Q2) - Low gate charge on N-channel allows direct MCU GPIO drive; P-channel requires dedicated driver due to high Q_g.
Thermal Resistance	R_θJA = 100°C/W - Limits max power dissipation to 1.3W at T_A = 25°C; suitable for 2oz FR-4 with 1-in² copper pad.
ESD Rating	HBM ±2kV - Integrated gate protection diodes eliminate need for external ESD clamps in consumer-grade designs.

Pinout & Package

Package: TSOT26 (6-pin thin shrink small outline transistor), 1.6mm × 2.9mm × 0.95mm, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Accepts 0–4.5V logic-level drive; threshold centered at 0.85V for reliable turn-on with 3.3V microcontrollers.
2 (S1)	N-channel source	Common source node for N-MOS; connects to ground or low-side return path in buck or load-switch configurations.
3 (D1)	N-channel drain	High-side switch output; ties to input rail (e.g., V_IN) when used as high-side switch or buck upper FET.
4 (D2)	P-channel drain	Shared drain terminal with Q1's source - forms common-drain complementary pair for inverting applications.
5 (S2)	P-channel source	Connects to positive supply (e.g., V_BAT); defines high-side reference for P-MOS conduction path.
6 (G2)	P-channel gate	Requires negative gate bias relative to S2; driven by inverting logic or dedicated gate driver for full enhancement.

Key Features

Feature	Design Value
Complementary channel pairing	Single-package integration of matched N+P MOSFETs eliminates layout mismatch and reduces board area by >40% vs. discrete solutions.
Low R_DS(ON) asymmetry	Optimized for unbalanced current handling: high R_DS(ON) N-FET for low-current control, ultra-low R_DS(ON) P-FET for high-current power path.
Fast switching with low C_iss	27.6pF (Q1) and 9.7pF (Q2) enable clean edge transitions and reduced EMI in 500kHz–1MHz DC-DC designs.
ESD-protected gate terminals	Integrated Zener clamps on all gates meet ±2kV HBM, removing external TVS components in handheld and wearables.
AEC-Q101 qualified	Validated for automotive body electronics including infotainment power sequencing and LED driver bias control.

Applications

USB Load Switch

Battery Protection Circuit

Use Scenario: Dual-rail USB 3.0 port with overcurrent and reverse-voltage protection in tablet docking stations.

IC Role / Device Role / Timing Role: Q1 acts as low-side enable switch; Q2 serves as reverse-polarity blocking FET on VBUS line.

Use Value: 55mΩ R_DS(ON) limits voltage drop to <210mV at 3.9A, preserving USB spec compliance while eliminating discrete Schottky diode losses.

Use Scenario: Li-ion battery pack protection IC interface for charge/discharge path isolation in power tools.

IC Role / Device Role / Timing Role: Q2 functions as high-side discharge switch; Q1 provides secondary short-circuit detection path via current-sense resistor.

Use Value: Matched thermal coupling ensures coordinated shutdown during overtemperature events, improving system-level reliability without added sensors.

Buck Converter Synchronous Rectifier

Power Sequencing Controller

Use Scenario: 12V-to-3.3V step-down regulator in FPGA I/O bank supply with <100ns dead-time control.

IC Role / Device Role / Timing Role: Q1 (high-side) and Q2 (low-side) operate in complementary PWM mode with gate timing synchronized to controller outputs.

Use Value: Fast t_F (4.3ns/6.5µs) and low Q_gd (0.04nC/7.3nC) minimize shoot-through risk and reduce gate driver power consumption by 35% vs. discrete alternatives.

Use Scenario: Multi-rail power-up sequence for industrial PLC CPU module requiring strict 3.3V-before-1.2V timing.

IC Role / Device Role / Timing Role: Q1 controls 3.3V rail enable; Q2 gates 1.2V LDO input, triggered by Q1's drain voltage rise after soft-start completion.

Use Value: Integrated complementary pair eliminates interposer delay between rails, achieving sub-10µs sequencing jitter across temperature (−55°C to +150°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-7	Higher V_DS (30V/−30V), higher R_DS(ON) (11.5mΩ/22mΩ), larger TSOP-6 package	Targeted at 24V industrial motor drivers; not optimized for 3.3V logic-level gate drive	Select when higher breakdown margin and higher continuous current (>5A) are required, accepting larger footprint and higher gate drive energy.
SI6926DQ-T1-GE3	Lower V_DS (20V/−20V), lower R_DS(ON) (22mΩ/40mΩ), same TSOT26 footprint	Designed for 5V USB PD sink applications; lacks AEC-Q101 qualification	Prefer for cost-sensitive consumer chargers where automotive qualification is unnecessary and 12V system margin is sufficient.

Compared with DMC25D1UVT-7, DMC2038LSD-7 trades compact size for ruggedness in 24V environments, while SI6926DQ-T1-GE3 offers better R_DS(ON) at lower voltage but sacrifices automotive reliability and gate-drive compatibility with 3.3V controllers.

Availability

DMC25D1UVT-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and power sequencing controllers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant performance.

Supply support for DMC25D1UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMC25D1UVT-7 belongs to Diodes' "PowerMOS" complementary FET product line, engineered specifically for space-constrained, high-efficiency power conversion where integrated N+P channel matching and AEC-Q101 qualification are mandatory.

FAQ

What is the maximum operating junction temperature for DMC25D1UVT-7?

The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Thermal derating begins at T_J > 125°C, and the device maintains specified R_DS(ON) and switching parameters up to this limit under steady-state conditions with proper PCB copper area.

Can DMC25D1UVT-7 be driven directly by a 3.3V microcontroller GPIO?

Yes - Q1 (N-channel) turns fully on with 3.3V gate drive (R_DS(ON) = 4.5Ω typ. at V_GS = 3.3V), but Q2 (P-channel) requires gate voltage ≤ (V_S2 − 4.5V) for low R_DS(ON); thus a level-shifting circuit or dedicated gate driver is needed for the P-FET in most configurations.

Does DMC25D1UVT-7 include internal body diodes, and are they rated for continuous conduction?

Yes - each MOSFET has an integrated body diode. Q1's diode supports 1.2A continuous forward current (I_S); Q2's diode handles −40A pulsed and −40A continuous (per note 6), making it suitable for synchronous rectification and reverse-current blocking without external diodes.

Is the TSOT26 package of DMC25D1UVT-7 compatible with standard reflow profiles for lead-free assembly?

Yes - the device is fully RoHS-compliant and qualified for IPC/JEDEC J-STD-020D Level 1 moisture sensitivity. It withstands peak reflow temperatures up to 260°C for 30 seconds and is compatible with standard SnAgCu (SAC305) solder paste profiles without delamination or voiding.

DMC25D1UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 25V, 12V

Current - Continuous Drain (Id) @ 25°C:: 500mA, 3.9A

Rds On (Max) @ Id, Vgs:: 4Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 27.6pF @ 10V

Power - Max:: 1.3W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMC25D1UVT-7 FAQ

1.How can I place an order for DMC25D1UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC25D1UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC25D1UVT-7 reliable?

The price and inventory of DMC25D1UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC25D1UVT-7 is usually 5 days.

3.What payment methods are accepted for DMC25D1UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC25D1UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC25D1UVT-7?

DMC25D1UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC25D1UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC25D1UVT-7?

For technical support, including DMC25D1UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC25D1UVT-7 requirements.

6.How does Aetrix verify that DMC25D1UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMC25D1UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC25D1UVT-7 meets industry standards.

7.What is the process for return or replacement of DMC25D1UVT-7?

All DMC25D1UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC25D1UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC25D1UVT-7 part is unused and in its original packaging.

Return procedure for DMC25D1UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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