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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2710UDW-13

Name: DMC2710UDW-13
Brand: Diodes Incorporated
SKU: DMC2710UDW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2710UDW-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: DMC2710UDW-13.pdf

Description:: MOSFET N/P-CH 20V 0.75A SOT363

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Product details

Overview

DMC2710UDW-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT363 package, integrating an N-channel (20V, 0.45Ω @ 4.5V) and P-channel (-20V, 0.75Ω @ -4.5V) device for bidirectional switching in compact power management circuits. It delivers 0.75A/–0.6A continuous drain current at 25°C, features ESD protection, and supports low-voltage gate drive down to 1.8V for battery-powered load control.

For engineers reviewing the DMC2710UDW-13 datasheet, DMC2710UDW-13 pinout, DMC2710UDW-13 application, or DMC2710UDW-13 equivalent, key selection criteria include verified R_DS(on) values at 2.5V/4.5V gate drive, thermal resistance (R_θJA = 325°C/W with copper pad), complementary channel matching, and SOT363 footprint compatibility for space-constrained relay drivers and DC-DC converter synchronous rectification.

Technical Context

This dual-channel MOSFET integrates matched N- and P-channel silicon die in one ultra-small surface-mount package, enabling half-bridge or push-pull topologies without discrete pairing. Its low gate threshold (±0.5V min) ensures turn-on with 1.8V logic, while fast switching (t_F = 174ns/89ns) and low Q_g (0.6/0.7nC) reduce drive loss in high-frequency DC-DC stages.

The device uses integrated gate protection diodes per channel and exhibits tightly controlled R_DS(on) temperature coefficients-normalized on-resistance varies <15% from –55°C to +150°C at V_GS = ±4.5V-supporting stable performance across automotive and industrial ambient ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V (N-ch), –20V (P-ch): Supports 12V rail switching with 67% voltage margin against transients
R_DS(on) @ V_GS = ±4.5V	0.45Ω (N), 0.75Ω (P): Enables ≤350mW conduction loss at 0.6A load in portable systems
I_D Continuous @ 25°C	0.75A (N), –0.6A (P): Sufficient for driving solenoids, LED arrays, and small relays
Q_g	0.6nC (N), 0.7nC (P): Reduces gate driver power demand in 1–2MHz SMPS designs
R_θJA	325°C/W (with 1-inch² copper): Allows 0.38W dissipation at ≤85°C ambient in standard FR-4 layout
C_iss	42pF (N), 49pF (P): Minimizes Miller effect in high-side/low-side gate drive networks
V_GS(th)	0.5–1.0V (N), –0.5 to –1.0V (P): Ensures reliable turn-on with 1.8V/3.3V microcontroller GPIO

Pinout & Package

Package: SOT363 - ultra-small 6-pin surface-mount package (2.15mm × 2.10mm × 1.00mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (S1)	N-channel source	Common source node for N-MOSFET; connects to ground or low-side return path
Pin 2 (G1)	N-channel gate	Control input for N-MOSFET; requires 0.5–1.0V threshold compliance
Pin 3 (D1)	N-channel drain	Switched output for high-side loads or half-bridge upper leg
Pin 4 (D2)	P-channel drain	Switched output for low-side loads or half-bridge lower leg
Pin 5 (G2)	P-channel gate	Control input for P-MOSFET; driven low to enable conduction
Pin 6 (S2)	P-channel source	Common source node for P-MOSFET; connects to V_CC or high-side supply rail

Key Features

Feature	Design Value
Complementary N+P pair in one package	Eliminates layout mismatch and timing skew between channels in H-bridge or level-shifting circuits
Low R_DS(on) at 2.5V gate drive	0.6Ω (N), 1.05Ω (P): Enables operation from single-cell Li-ion (2.5–4.2V) without boost circuitry
ESD protection	HBM >2kV: Prevents gate oxide damage during board handling and automated assembly
Ultra-low input capacitance	C_iss = 42/49pF: Reduces switching energy and enables clean edge transitions up to 2MHz
Thermally enhanced pad layout	325°C/W R_θJA with 1-inch² copper: Supports sustained 0.38W dissipation without heatsink in handheld devices

Applications

Battery-Powered Load Switching

Synchronous Buck Converter Bottom-Side Switch

Use Scenario: Power gating of peripherals (GPS, BLE radio, sensors) in wearables and IoT nodes using single-cell lithium batteries.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling both high-side (P-ch) and low-side (N-ch) paths for zero-quiescent-current shutdown.

Use Value: Achieves <100nA off-state leakage (IDSS ≤ ±100nA), extending battery life beyond 12 months in sleep mode.

Use Scenario: Low-voltage (3.3V/5V) DC-DC conversion in portable medical monitors and point-of-sale terminals.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in buck converter output stage to improve efficiency at light loads.

Use Value: Reduces conduction loss by 40% vs. 0.3V Schottky at 0.5A, raising conversion efficiency from 82% to 89% at 10% load.

Compact Solid-State Relay Replacement

Low-Voltage Display Backlight Driver

Use Scenario: Replacing electromechanical relays in smart home controllers and PLC I/O modules where size and lifetime are critical.

IC Role / Device Role / Timing Role: Bidirectional switching element controlling AC/DC loads up to 20V with isolated gate drive.

Use Value: Delivers >1M switching cycles (vs. 100k mechanical relays) and eliminates contact bounce in motor start-up sequencing.

Use Scenario: Driving segmented OLED or TFT-LCD backlights in handheld test equipment and portable diagnostics tools.

IC Role / Device Role / Timing Role: PWM-controlled current sink/source for precise brightness regulation across multiple LED strings.

Use Value: Fast t_F = 174ns/89ns enables clean 20kHz PWM dimming without visible flicker or audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-7	Higher R_DS(on) (0.85Ω/1.3Ω @ ±4.5V), larger SOT563 package, no integrated gate diodes	Lower efficiency in battery-critical apps; suited for cost-sensitive industrial controls with relaxed thermal limits	Select when board area >2.5mm² available and gate drive voltage ≥4.5V is guaranteed
Si1027DL-T1-GE3	Asymmetric rating (30V/–20V), higher Q_g (1.1nC/0.9nC), no ESD protection	Not suitable for 1.8V logic interfaces; requires external ESD clamps in handheld designs	Choose only for legacy designs requiring pin-for-pin replacement with existing Si1027DL footprints

Compared with DMC2710UDW-13, DMC2038LSD-7 trades lower cost for reduced efficiency and larger footprint, while Si1027DL-T1-GE3 sacrifices gate robustness and low-voltage drive capability for higher breakdown margin-neither matches the combination of 1.8V turn-on, ESD hardening, and SOT363 miniaturization.

Availability

DMC2710UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and power supply converter circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DMC2710UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMC2710UDW belongs to Diodes' "Ultra-Small Signal & Power MOSFET" product line, engineered specifically for space-constrained, low-voltage, high-reliability applications such as portable medical devices, wearables, and smart sensor nodes.

FAQ

What is the maximum safe operating junction temperature for DMC2710UDW-13?

The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet's Safe Operating Area (SOA) curves. Thermal derating begins above +85°C ambient when mounted on a standard FR-4 board with 1-inch² copper; sustained operation at full 0.38W power dissipation requires ambient ≤65°C or enhanced thermal layout.

Can DMC2710UDW-13 be used in a high-side switch configuration with 5V logic control?

Yes-the P-channel device (Q2) has a gate threshold of –0.5V to –1.0V and turns fully on with V_GS = –5V. When used as a high-side switch, drive the gate to 0V (to pull V_GS = –5V relative to 5V source) using an open-drain or level-shifted driver; avoid direct 5V MCU GPIO connection to prevent partial turn-on and excessive R_DS(on).

Does the DMC2710UDW-13 require external gate resistors for stability?

External gate resistors are recommended: 10Ω–47Ω in series with each gate (G1/G2) to dampen ringing caused by low C_iss/C_rss and PCB trace inductance. The datasheet's switching time test conditions (R_g = 10Ω) confirm this value provides optimal rise/fall time control without sacrificing speed in typical 4-layer board layouts.

Is the SOT363 package of DMC2710UDW-13 compatible with standard reflow profiles?

Yes-it is rated for moisture sensitivity level 1 (MSL-1) and qualified for standard Pb-free reflow per J-STD-020, with peak temperature up to 260°C. The matte tin finish ensures solderability per MIL-STD-202, Method 208; no pre-bake is required, and standard stencil aperture (0.15mm thickness, 0.25mm × 0.35mm) achieves >95% paste release yield.

DMC2710UDW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 750mA (Ta), 600mA (Ta)

Rds On (Max) @ Id, Vgs:: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6nC @ 4.5V, 0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 42pF @ 16V, 49pF @ 16V

Power - Max:: 290mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-363

DMC2710UDW-13 FAQ

1.How can I place an order for DMC2710UDW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2710UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2710UDW-13 reliable?

The price and inventory of DMC2710UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2710UDW-13 is usually 5 days.

3.What payment methods are accepted for DMC2710UDW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2710UDW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2710UDW-13?

DMC2710UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2710UDW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2710UDW-13?

For technical support, including DMC2710UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2710UDW-13 requirements.

6.How does Aetrix verify that DMC2710UDW-13 is sourced from the original manufacturer or authorized distributors?

All DMC2710UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2710UDW-13 meets industry standards.

7.What is the process for return or replacement of DMC2710UDW-13?

All DMC2710UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2710UDW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2710UDW-13 part is unused and in its original packaging.

Return procedure for DMC2710UDW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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