Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC2710UV-13

Part No.:
DMC2710UV-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMC2710UV-13.pdf
Description:
MOSFET N/P-CH 20V 1.1A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC2710UV-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT563 package, integrating an N-channel (20V, 0.4Ω @ 4.5V) and P-channel (-20V, 0.7Ω @ -4.5V) device for bidirectional switching. It delivers 1.1A/–0.8A continuous drain current at 25°C, features ultra-low gate threshold voltage (±0.5V typ), and supports high-efficiency power management in space-constrained battery-powered systems.

For engineers reviewing the DMC2710UV-13 datasheet, DMC2710UV-13 pinout, DMC2710UV-13 application, or DMC2710UV-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at low VGS, integrated ESD protection, thermal resistance of 152°C/W (with copper pad), and compatibility with 1.8V logic-level drive in load-switch and relay-driver circuits.

Technical Context

This dual MOSFET implements complementary switching topology where Q1 (N-channel) and Q2 (P-channel) operate in coordinated on/off states to enable bidirectional current control without external level-shifting. Its low 0.14Ω/0.4Ω typical RDS(ON) at 4.5V ensures minimal conduction loss in portable DC-DC converters and USB power switches.

The device uses a shared SOT563 leadframe with isolated die bonding, enabling independent gate control while maintaining tight thermal coupling. Gate charge values (0.6nC/0.7nC) and fast switching times (tR = 3.1ns/15ns) support >1MHz PWM operation in synchronous buck controllers and H-bridge motor drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V (Q1), –20V (Q2): Supports 12V rail and automotive 12V battery systems with margin
RDS(ON) @ VGS = ±4.5V 0.14Ω (N), 0.4Ω (P): Enables <100mW conduction loss at 500mA load current
VGS(TH) 0.5–1.0V (N), –0.5 to –1.0V (P): Compatible with 1.8V I/O microcontrollers without level shifters
ID Continuous 1.1A (Q1), –0.8A (Q2) at 25°C: Sufficient for LED drivers, solenoid coils, and small relays
Qg 0.6nC (Q1), 0.7nC (Q2): Reduces gate drive power and enables efficient 3.3V GPIO switching
RθJA 152°C/W (with 1-inch² copper pad): Allows 0.8W dissipation at ≤70°C ambient in compact PCB layouts
Ciss 42pF (Q1), 49pF (Q2): Minimizes capacitive loading on driving logic and improves noise immunity

Pinout & Package

SOT563 is a 6-pin ultra-small surface-mount package (1.6mm × 1.6mm × 0.6mm) with exposed thermal pad, rated for moisture sensitivity Level 1 and RoHS-compliant matte tin plating.

Pin/Terminal Circuit Role Design Meaning
1 N-Channel Source Common source node for Q1; tied to ground reference in high-side switch configurations
2 P-Channel Drain Output node for P-channel; connects to load when Q2 is active (e.g., negative rail switching)
3 N-Channel Drain Output node for N-channel; connects to load when Q1 is active (e.g., positive rail switching)
4 P-Channel Source Common source node for Q2; tied to negative supply or ground in low-side configurations
5 N-Channel Gate Control input for Q1; requires 0.5–1.0V threshold to turn on with 1.8V logic
6 P-Channel Gate Control input for Q2; driven low (≤–0.5V) relative to its source to activate

Key Features

Feature Design Value
Complementary Pair Integration Single SOT563 package replaces discrete N+P MOSFETs, reducing board area by >40% vs. dual-SOT23
ESD-Protected Gate HBM rating ≥2kV per AEC-Q101; eliminates need for external TVS diodes in handheld device interfaces
Low VGS(TH) Matching N- and P-channel thresholds centered at ±0.8V, enabling symmetrical 1.8V logic control without bias networks
Ultra-Low Ciss 42–49pF typical: Limits gate drive current to <1mA at 1MHz, easing MCU GPIO sourcing requirements
Thermal Performance 152°C/W RθJA with 1-inch² copper: Supports 0.8W operation in 25°C ambient without heatsink

Applications

Battery-Powered Load Switch USB Power Delivery Switch

Use Scenario: Enabling/disabling power to peripherals in Bluetooth earbuds or smartwatches using a single GPIO.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling both VBUS and GND paths to prevent backfeed and ensure clean hot-plug sequencing.

Use Value: 0.4Ω/0.7Ω RDS(ON) limits voltage drop to <400mV at 1A, preserving battery runtime and meeting USB-IF voltage tolerance specs.

Use Scenario: Isolating downstream USB-C ports during port negotiation or fault conditions in multi-port hubs.

IC Role / Device Role / Timing Role: Bidirectional power path controller managing VCONN and VBUS routing with sub-100ns turn-off delay.

Use Value: tD(OFF) of 386ns (Q1) and 213ns (Q2) enables rapid fault response, preventing overvoltage damage to connected devices.

Solenoid Driver for IoT Actuators Low-Voltage Relay Interface

Use Scenario: Driving 12V/500mA solenoids in smart lock modules powered by two AA batteries (3V nominal).

IC Role / Device Role / Timing Role: High-side (Q1) and low-side (Q2) driver delivering full rail voltage swing with minimal dropout.

Use Value: VGS(TH) < 1V allows direct drive from 3.3V MCU outputs, eliminating level-shifters and reducing BOM count by one IC.

Use Scenario: Replacing mechanical relays in industrial sensor nodes requiring silent, wear-free switching of 24V control signals.

IC Role / Device Role / Timing Role: Solid-state relay substitute providing galvanically isolated switching via optocoupler-compatible gate drive.

Use Value: 0.9Ω max RDS(ON) at –2.5V ensures <250mW dissipation at 500mA, enabling thermally stable operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LVT-7 Higher RDS(ON) (0.65Ω/1.1Ω @ ±4.5V), larger SOT363 package Lower current capability (0.7A/–0.5A); suited for signal-level switching only Select when cost sensitivity outweighs RDS(ON) and board space constraints
DMC2041UDM-7 Asymmetric pairing: N-channel only (20V, 0.25Ω), no integrated P-channel Requires external P-MOSFET for bidirectional control; increases layout complexity Choose when design requires independent optimization of each channel's RDS(ON) and Qg

Compared with DMC2710UV-13, DMC2038LVT-7 trades performance for cost in low-power signal switching, while DMC2041UDM-7 offers flexibility at the expense of integration and footprint-making DMC2710UV-13 optimal for space-constrained, battery-sensitive designs needing matched complementary behavior.

Availability

DMC2710UV-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and power supply converter circuits requiring stable component supply across extended production lifecycles.

Supply support for DMC2710UV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and product qualification per AEC-Q101.

The DMC2710UV belongs to Diodes' low-voltage complementary MOSFET product line, engineered specifically for high-efficiency, ultra-compact power management in portable and IoT edge devices.

FAQ

What is the maximum junction temperature for continuous operation?

The DMC2710UV-13 has an operating junction temperature range of –55°C to +150°C. For continuous DC operation at 25°C ambient, thermal limits are governed by RθJA = 152°C/W and PD = 0.8W, allowing sustained operation up to 148°C junction temperature under recommended PCB layout with 1-inch² copper.

Can the N- and P-channel devices be used independently in different circuits?

Yes-the internal schematic shows electrically isolated dies with separate gate, drain, and source terminals. Pin 1 (N-source) and Pin 4 (P-source) are not internally connected, enabling independent use as discrete N- and P-channel switches on the same board, provided thermal and layout constraints are observed.

Is the DMC2710UV-13 qualified for automotive applications?

No-while the device meets AEC-Q101 stress-test methodology for individual MOSFETs, it is not officially qualified for automotive use. Diodes states that automotive-grade versions require specific change control, PPAP documentation, and IATF 16949-manufactured lots, which are not part of the DMC2710UV-13 standard offering.

How does the ESD protection affect gate drive circuit design?

The integrated ESD protection diodes (HBM ≥2kV) eliminate the need for external gate resistors or TVS components in most consumer applications. However, for high-noise industrial environments, a 10Ω series gate resistor is still recommended to dampen ringing and limit peak transient current during fast edge transitions.

DMC2710UV-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs:
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 16V, 49pF @ 16V
Power - Max:
460mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMC2710UV-13 FAQ

1.How can I place an order for DMC2710UV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2710UV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2710UV-13 reliable?

The price and inventory of DMC2710UV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2710UV-13 is usually 5 days.

3.What payment methods are accepted for DMC2710UV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2710UV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2710UV-13?

DMC2710UV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2710UV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2710UV-13?

For technical support, including DMC2710UV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2710UV-13 requirements.

6.How does Aetrix verify that DMC2710UV-13 is sourced from the original manufacturer or authorized distributors?

All DMC2710UV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2710UV-13 meets industry standards.

7.What is the process for return or replacement of DMC2710UV-13?

All DMC2710UV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2710UV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2710UV-13 part is unused and in its original packaging.

Return procedure for DMC2710UV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC2710UV-13 Tags

  • DMC2710UV-13
  • DMC2710UV-13 PDF
  • DMC2710UV-13 Datasheet
  • DMC2710UV-13 Specifications
  • DMC2710UV-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC2710UV-13
  • Buy DMC2710UV-13
  • DMC2710UV-13 Price
  • DMC2710UV-13 Distributor
  • DMC2710UV-13 Supplier
  • DMC2710UV-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER