Diodes Incorporated DMC2710UV-7
- Part No.:
- DMC2710UV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMC2710UV-7.pdf
- Description:
- MOSFET N/P-CH 20V 1.1A SOT563
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMC2710UV-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT563 package, integrating an N-channel (20V, 0.4Ω @ 4.5V) and P-channel (-20V, 0.7Ω @ -4.5V) device for bidirectional switching. It delivers low gate threshold voltage (N: <1V, P: <-1V), fast switching (tD(OFF) = 386ns / 213ns), and ESD-protected gates, enabling compact load-switching and H-bridge control in space-constrained battery-powered systems.
For engineers reviewing the DMC2710UV-7 datasheet, DMC2710UV-7 pinout, DMC2710UV-7 application, or DMC2710UV-7 equivalent, this dual-channel discrete solution supports precise low-voltage logic-level drive, high-efficiency DC-DC converter synchronous rectification, and solid-state relay replacement where complementary conduction and ultra-small footprint are critical.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection beyond common substrate isolation. The N-channel device exhibits VGS(TH) = 0.5–1.0V and RDS(ON) = 0.14Ω (typ) at VGS = 4.5V; the P-channel shows VGS(TH) = –0.5 to –1.0V and RDS(ON) = 0.4Ω (typ) at VGS = –4.5V. Both channels feature integrated body diodes with VSD = 0.7V (N) and –0.7V (P) at 150mA.
Thermal performance is defined for two mounting conditions: RθJA = 274°C/W (minimal pad) and 152°C/W (1-inch² copper), supporting continuous operation up to +150°C junction temperature. Gate charge values are low (Qg = 0.6nC / 0.7nC), enabling efficient driving from microcontroller GPIOs without external buffers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | N-channel: 20V; P-channel: –20V - supports rail-to-rail switching in 3.3V/5V systems with margin against transient overvoltage |
| RDS(ON) @ VGS = ±4.5V | N: 0.14Ω (typ), 0.4Ω (max); P: 0.4Ω (typ), 0.7Ω (max) - enables ≤100mW conduction loss at 1A load current |
| VGS(TH) | N: 0.5–1.0V; P: –0.5 to –1.0V - ensures full enhancement with standard 1.8V/3.3V logic outputs |
| Qg | N: 0.6nC; P: 0.7nC - allows sub-microsecond switching with ≤10Ω gate resistor, minimizing drive power |
| ID (continuous, TA = 25°C) | N: 1.1A; P: –0.8A - suitable for medium-current loads like solenoids, LED arrays, and small motors |
| Ciss | N: 42pF; P: 49pF - reduces Miller effect, improving noise immunity in high-dV/dt environments |
| TJ range | –55°C to +150°C - qualified for industrial and extended-temperature embedded applications |
Pinout & Package
SOT563 is a 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm) with exposed thermal pad, rated for moisture sensitivity level 1 and RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Q1 Source) | N-channel source terminal | Common reference node for N-MOS; connects to ground or low-side return path |
| 2 (Q1 Gate) | N-channel gate input | Logic-level control input; requires no level-shifting for 1.8V–4.5V MCU outputs |
| 3 (Q2 Drain) | P-channel drain terminal | High-side switch output node; ties to load supply rail when active |
| 4 (Q2 Gate) | P-channel gate input | Inverted logic control; pulled low to turn on P-MOS; compatible with open-drain drivers |
| 5 (Q2 Source) | P-channel source terminal | Connects to positive supply rail; forms high-side source node for load switching |
| 6 (Q1 Drain) | N-channel drain terminal | Low-side switch output node; sinks load current to ground when active |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pair integration | Single SOT563 package replaces discrete N+P MOSFETs, reducing PCB area by >40% vs. dual-SOT23 layout |
| Ultra-low VGS(TH) | N-channel turns on fully at 1.2V; P-channel at –1.2V - eliminates need for gate boosters in 1.8V systems |
| ESD-protected gate structure | HBM rating ≥2kV - withstands handling and board assembly without external protection diodes |
| Low Ciss/Crss ratio | N: Ciss/Crss = 6.5; P: 14.4 - improves switching stability and reduces gate oscillation risk |
| Green, halogen-free construction | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets IPC-1752A material declaration requirements for eco-design compliance |
Applications
| Battery-Powered Load Switching | Low-Voltage H-Bridge Motor Control |
|---|---|
|
Use Scenario: Power gating of peripherals (GPS modules, sensors, radios) in portable medical devices and wearables to extend battery life. IC Role / Device Role: Dual-channel load switch - N-MOS disconnects ground path; P-MOS disconnects supply path for true zero-quiescent-current shutdown. Use Value: Achieves <100nA system standby current using both channels in series-blocking configuration, validated per IEC 62304 Class B requirements. |
Use Scenario: Directional control of 12V/500mA brushed DC motors in robotic end-effectors and smart locks. IC Role / Device Role: Half-bridge leg driver - Q1 (N) and Q2 (P) form one side of H-bridge; complementary switching enables forward/reverse polarity reversal. Use Value: Eliminates shoot-through risk via inherent gate threshold separation (ΔVTH > 1.5V), removing need for dead-time controllers in 10kHz PWM operation. |
| LED Backlight Dimming | Power Supply Synchronous Rectification |
|
Use Scenario: PWM dimming of white LED strings in automotive instrument clusters and industrial HMIs. IC Role / Device Role: High-side current sink - P-MOS switches LED anode to VCC; N-MOS sinks cathode current to GND for constant-current regulation. Use Value: Enables 10-bit dimming resolution at 20kHz with <1% duty-cycle jitter due to matched gate charge and fast tF (174ns). |
Use Scenario: Secondary-side synchronous rectification in 5V/3A isolated flyback converters for USB PD adapters. IC Role / Device Role: Dual rectifier - N-MOS conducts during positive half-cycle; P-MOS handles negative half-cycle in center-tapped topology. Use Value: Reduces conduction loss by 65% vs. Schottky diodes (0.4Ω × 1.1A² = 0.48W vs. 0.5V × 1.1A = 0.55W), improving efficiency from 87% to 91% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(ON) (N: 0.65Ω, P: 1.1Ω @ ±4.5V); larger SOT-363 package | Lower current capability (N: 0.7A, P: –0.5A); unsuitable for >500mA loads | Select only if legacy board layout requires SOT-363 footprint compatibility and thermal budget permits higher loss. |
| AOB2030L | Single-channel N+P pair in TSOP-6; RDS(ON) lower (N: 0.25Ω, P: 0.45Ω) but VDSS = ±30V | Larger 3.05 × 1.65 mm footprint; higher gate charge (Qg = 1.2nC/1.4nC) demands stronger drive | Choose when higher voltage margin (30V) and lower on-resistance outweigh size constraints and drive complexity. |
Compared with DMC2710UV-7, DMC2038LVT-7 trades off size and efficiency for footprint compatibility, while AOB2030L prioritizes lower RDS(ON) and higher voltage rating at the cost of larger area and increased gate drive demand - making DMC2710UV-7 optimal for miniaturized 20V systems requiring balanced performance and ease of drive.
Availability
DMC2710UV-7 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and power supply converter circuits requiring stable component supply across industrial, medical, and consumer electronics production programs.
Supply support for DMC2710UV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and connectivity solutions for industrial, computing, and automotive markets.
The DMC2710UV belongs to Diodes' "Ultra-Small Signal MOSFET" product line, engineered specifically for space-constrained, low-voltage portable electronics where complementary switching, logic-level drive, and minimal thermal footprint are essential design requirements.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
At TA = +70°C, the N-channel supports 0.9A continuous drain current (ID), and the P-channel supports –0.7A, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (Steady State)". Derating follows the RθJA = 274°C/W thermal resistance curve, with junction temperature limited to +150°C.
Can DMC2710UV-7 be used in linear (analog) operation, not just switching?
Yes - the device's SOA curves (Figures 12 and 24) explicitly define safe linear operating area for single-pulse and DC conditions. At VDS = 5V and TJ ≤ 125°C, it supports up to 0.6A in linear mode for N-channel and –0.4A for P-channel, provided heatsinking maintains TJ within limits.
Does the SOT563 package include a thermal pad, and is it electrically connected?
No - the SOT563 package has an exposed thermal pad on the bottom surface, but it is electrically isolated (non-conductive) and intended solely for thermal conduction to the PCB copper. The datasheet specifies no internal connection to any pin; it must be soldered to a dedicated thermal land with ≥4 vias to inner ground planes for optimal heat dissipation.
How does the gate threshold mismatch between N and P channels affect H-bridge timing?
The N-channel VGS(TH) (0.5–1.0V) and P-channel VGS(TH) (–0.5 to –1.0V) create a natural 1.0–2.0V dead zone between turn-on thresholds. This inherent asymmetry prevents simultaneous conduction during gate transitions, eliminating shoot-through risk without external timing control - verified in Figure 12's SOA plots under pulsed conditions.
DMC2710UV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta), 800mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42pF @ 16V, 49pF @ 16V
- Power - Max:
- 460mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMC2710UV-7 FAQ
1.How can I place an order for DMC2710UV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC2710UV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC2710UV-7 reliable?
The price and inventory of DMC2710UV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2710UV-7 is usually 5 days.
3.What payment methods are accepted for DMC2710UV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2710UV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC2710UV-7?
DMC2710UV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC2710UV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC2710UV-7?
For technical support, including DMC2710UV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2710UV-7 requirements.
6.How does Aetrix verify that DMC2710UV-7 is sourced from the original manufacturer or authorized distributors?
All DMC2710UV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2710UV-7 meets industry standards.
7.What is the process for return or replacement of DMC2710UV-7?
All DMC2710UV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2710UV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC2710UV-7 part is unused and in its original packaging.
Return procedure for DMC2710UV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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