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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC2710UVT-13

Name: DMC2710UVT-13
Brand: Diodes Incorporated
SKU: DMC2710UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC2710UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMC2710UVT-13.pdf

Description:: MOSFET N/P-CH 20V 1.2A TSOT23-6

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Product details

Overview

DMC2710UVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (20V, 0.4Ω @ 4.5V) and P-channel (-20V, 0.7Ω @ -4.5V) device for bidirectional switching in compact DC-DC converters and load switches. It delivers 1.2A/–0.9A continuous drain current at 25°C with ESD-protected gates and ultra-low input capacitance (42/49 pF).

For engineers reviewing the DMC2710UVT-13 datasheet, DMC2710UVT-13 pinout, DMC2710UVT-13 application, or DMC2710UVT-13 equivalent, this dual-channel MOSFET supports space-constrained portable electronics designs requiring low R_DS(ON), fast switching (t_R = 3.1 ns / 15 ns), and thermal robustness up to +150°C junction temperature.

Technical Context

This complementary pair operates with independent gate control: Q1 (N-channel) turns on at V_GS(TH) = 0.5–1.0V and Q2 (P-channel) at V_GS(TH) = –0.5 to –1.0V, enabling synchronous rectification and H-bridge half-bridge configurations. Both devices share identical TSOT26 footprint and thermal resistance (R_θJA = 204°C/W, steady-state).

The integrated body diodes exhibit low forward voltage (V_SD = 0.7V / –0.7V @ 150mA) and fast reverse recovery (t_RR = 88 ns / 10.5 ns), supporting high-frequency PWM operation without external Schottky diodes in buck or boost topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V (N-ch), –20V (P-ch): Supports 12V rail switching with 67% voltage margin against transients
R_DS(ON)	0.4Ω @ 4.5V (Q1), 0.7Ω @ –4.5V (Q2): Enables <120mW conduction loss at 600mA load
I_D (continuous)	1.2A (Q1), –0.9A (Q2) at 25°C: Sufficient for USB-powered peripheral power gating
C_iss	42pF (Q1), 49pF (Q2): Reduces gate drive power and enables >1MHz switching without excessive driver stress
t_R/t_F	3.1ns/174ns (Q1), 15ns/89ns (Q2): Minimizes switching transition losses in portable battery management
T_J range	–55°C to +150°C: Validated for extended industrial and automotive cabin ambient conditions
Package	TSOT26: 2.9mm × 1.6mm × 0.95mm footprint fits sub-3mm board height constraints

Pinout & Package

TSOT26 package: 6-pin ultra-small surface-mount outline with exposed thermal pad (no internal thermal pad connection per datasheet); molded green compound, matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
S2	Source of P-channel (Q2)	Common source node for high-side switch configuration; connects to input rail
G1	Gate of N-channel (Q1)	Independent control input for low-side switching; requires positive drive only
D2	Drain of P-channel (Q2)	Output node for high-side switch; ties to load when Q2 is on
D1	Drain of N-channel (Q1)	Output node for low-side switch; ties to ground when Q1 is on
G2	Gate of P-channel (Q2)	Independent control input for high-side switching; requires negative or referenced drive
S1	Source of N-channel (Q1)	Common source node for low-side switch; connects to ground reference

Key Features

Feature	Design Value
Complementary pair integration	Single TSOT26 package replaces discrete N+P MOSFETs, reducing PCB area by >40% vs. two SOT-23s
Low R_DS(ON) at logic-level drive	0.4Ω/0.7Ω at 4.5V/–4.5V enables direct microcontroller GPIO driving without level shifters
ESD-protected gate	HBM rating ≥2kV ensures robustness during automated assembly and field handling
Halogen- and antimony-free	<900ppm Br, <900ppm Cl, <1000ppm Sb meets strict environmental compliance for global consumer shipments
Ultra-low leakage	I_DSS ≤100nA (Q1), ≤–100nA (Q2) preserves battery life in always-on standby circuits

Applications

Battery-Powered Load Switch

USB-C Power Path Control

Use Scenario: Enabling/disabling power to Bluetooth earbud charging case circuitry during lid open/close events.

IC Role / Device Role / Timing Role: Dual-channel load switch managing both VBUS and battery discharge paths with coordinated turn-on/turn-off sequencing.

Use Value: Eliminates need for separate high-side and low-side drivers; 0.4Ω/0.7Ω R_DS(ON) limits dropout to <600mV at 1.2A peak load.

Use Scenario: Controlling power direction between USB-C port and internal Li-ion battery in portable speakers.

IC Role / Device Role / Timing Role: Complementary pair configured as ideal diode controller for automatic forward/reverse power path selection.

Use Value: Fast t_R/t_F (3.1ns/15ns) ensures clean transitions during plug/unplug events; low C_iss prevents signal integrity issues on CC lines.

Compact DC-DC Synchronous Rectifier

Portable Display Backlight Driver

Use Scenario: Replacing Schottky diodes in 3.3V/1A buck converter for smartwatch PMIC subsystem.

IC Role / Device Role / Timing Role: Synchronous rectifier pair operating in phase-aligned PWM mode with gate timing matched to controller output.

Use Value: 0.4Ω/0.7Ω R_DS(ON) cuts conduction loss by 65% vs. 0.3V Schottky; t_RR = 88ns/10.5ns prevents shoot-through during dead-time.

Use Scenario: Driving white LED strings in foldable tablet display using boost topology with current regulation.

IC Role / Device Role / Timing Role: High-side switch (Q2) controlling LED anode voltage; low-side switch (Q1) used for PWM dimming current sink.

Use Value: 1.2A/–0.9A rating supports 800mA LED current with 25% headroom; TSOT26 footprint fits narrow bezel layout constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LVT-7	Lower R_DS(ON) (0.25Ω/0.45Ω @ 4.5V/–4.5V) but higher C_iss (65pF/60pF); same TSOT26 package	Better efficiency at >500mA loads; less suitable for >2MHz switching due to higher capacitance	Select when conduction loss dominates system efficiency and switching frequency is ≤1MHz
SI6926ADQ-T1-GE3	Higher V_DSS (30V/–30V); larger SO-8 package; higher R_DS(ON) (0.65Ω/1.1Ω @ 4.5V/–4.5V)	Supports 24V industrial rails; unsuitable for sub-3mm height designs due to 1.75mm profile	Select when higher voltage margin or legacy SO-8 layout compatibility is required

Compared with DMC2710UVT-13, DMC2038LVT-7 improves conduction loss but trades off switching speed, while SI6926ADQ-T1-GE3 sacrifices size and R_DS(ON) for broader voltage capability-making DMC2710UVT-13 optimal for space- and efficiency-critical 12V portable systems.

Availability

DMC2710UVT-13 is available at Aetrix Electronics and suitable for battery-powered load switching, USB-C power path control, compact DC-DC synchronous rectification, and portable display backlight driving requiring stable component supply across high-mix production runs.

Supply support for DMC2710UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMC2710UVT belongs to Diodes' ultra-compact logic-level MOSFET product line, engineered specifically for space-constrained portable electronics where board area, thermal performance, and low-voltage drive compatibility are critical design constraints.

FAQ

What is the maximum gate-source voltage rating for each channel?

The DMC2710UVT-13 specifies ±6V maximum gate-source voltage (V_GSS) for both the N-channel (Q1) and P-channel (Q2) devices. Exceeding this rating risks permanent gate oxide damage. Drive circuits must limit gate voltage swing to within –6V to +6V relative to each channel's source terminal, especially critical for the P-channel gate which requires negative bias relative to its source.

Can this device be used in a back-to-back configuration for AC switching?

No-DMC2710UVT-13 is not rated or characterized for bidirectional AC blocking. Its body diodes are unidirectional and asymmetric (Q1 diode anode at S1, Q2 diode anode at S2), and the absolute maximum ratings do not include reverse-biased drain-source voltage beyond |V_DSS|. For AC solid-state relay applications, purpose-built back-to-back MOSFETs with matched channels and symmetric breakdown ratings are required.

Is thermal pad soldering required for reliable operation at full current?

No thermal pad connection is specified in the TSOT26 mechanical drawing for DMC2710UVT-13; the package uses standard leadframe construction without an exposed thermal slug. Thermal performance relies entirely on copper traces per the recommended pad layout (2oz FR-4, minimum 1-inch² copper area). At 1.2A continuous, junction temperature rise is limited to ~100°C above ambient under those conditions.

Does the device meet AEC-Q101 qualification for automotive use?

DMC2710UVT-13 is not AEC-Q101 qualified per Diodes Incorporated's product definitions document. While it operates from –55°C to +150°C and is RoHS/halogen-free, automotive qualification requires additional stress testing, change control, and PPAP documentation. For automotive applications, contact Diodes directly to request AEC-Q101-qualified equivalents such as the DMC2040UDW series.

DMC2710UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta), 900mA (Ta)

Rds On (Max) @ Id, Vgs:: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6nC @ 4.5V, 0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 42pF @ 16V, 49pF @ 16V

Power - Max:: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-23-6

DMC2710UVT-13 FAQ

1.How can I place an order for DMC2710UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC2710UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC2710UVT-13 reliable?

The price and inventory of DMC2710UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC2710UVT-13 is usually 5 days.

3.What payment methods are accepted for DMC2710UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC2710UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC2710UVT-13?

DMC2710UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC2710UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC2710UVT-13?

For technical support, including DMC2710UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC2710UVT-13 requirements.

6.How does Aetrix verify that DMC2710UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMC2710UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC2710UVT-13 meets industry standards.

7.What is the process for return or replacement of DMC2710UVT-13?

All DMC2710UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC2710UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC2710UVT-13 part is unused and in its original packaging.

Return procedure for DMC2710UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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