Diodes Incorporated DMC2990UDJQ-7

Overview

DMC2990UDJQ-7 from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a single SOT963 package, integrating one N-channel (20V, 0.99Ω @ 4.5V) and one P-channel (-20V, 1.9Ω @ -4.5V) device. It delivers low-threshold switching (V_GS(TH) ≤ ±1.0V), ultra-low gate charge (Q_g ≤ 0.5nC), and AEC-Q101 qualification for automotive power management and analog interfacing functions.

For engineers reviewing the DMC2990UDJQ-7 datasheet, DMC2990UDJQ-7 pinout, DMC2990UDJQ-7 application, or DMC2990UDJQ-7 equivalent, key selection criteria include dual-channel complementary operation in 1mm × 1mm footprint, guaranteed R_DS(ON) at V_GS = ±1.5V/±1.8V, thermal resistance of 360°C/W, and PPAP-capable automotive qualification.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection-each channel operates with its own gate, source, and drain terminals. The N-channel supports 450mA continuous drain current at V_GS = 4.5V and exhibits 27.6pF input capacitance; the P-channel delivers -310mA at V_GS = -4.5V with 28.7pF C_iss and higher gate resistance (399Ω).

Both devices feature ESD-protected gates, operate across -55°C to +150°C junction temperature, and are characterized for stable R_DS(ON) performance over temperature-normalized on-resistance variation remains within ±15% from -55°C to 125°C at fixed I_D.

Key Specifications

Pinout & Package

SOT963 is a 6-terminal ultra-small surface-mount package (1.0mm × 1.0mm × 0.45mm max height) with exposed thermal pad not connected internally; terminals are matte tin annealed over copper leadframe and solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Compared with DMC2038LSD-7 and DMC3025LSD-7, the DMC2990UDJQ-7 uniquely provides matched N+P characteristics in one die, eliminating inter-device timing skew and reducing BOM count by one component-critical for compact automotive and portable medical designs.

Availability

DMC2990UDJQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery interfaces, industrial sensor nodes, and portable medical device power sequencing requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for DMC2990UDJQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets with ISO/TS 16949-certified operations.

The DMC2990UDJQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained automotive power management and analog signal routing where dual-channel complementarity and low-voltage logic compatibility are essential.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At T_A = +70°C, the N-channel supports 350mA continuous drain current with V_GS = 4.5V, while the P-channel supports -240mA under the same condition. These values are specified in the Maximum Ratings table and assume mounting on FR-4 PCB with minimum recommended pad layout per Note 6.

Does the DMC2990UDJQ-7 require external gate resistors for typical 1.8V GPIO drive?

No external gate resistor is required when driven directly from a 1.8V microcontroller GPIO, as the device's V_GS(TH) is guaranteed ≤1.0V (N-ch) and ≥-1.0V (P-ch), and total gate charge is only 0.4–0.5nC. However, a 10Ω series resistor is recommended to dampen potential ringing in high-dI/dt layouts.

How is thermal performance affected when mounted without the recommended pad layout?

Without the minimum recommended FR-4 pad layout, R_θJA degrades from 360°C/W (steady-state) to >500°C/W, limiting usable power dissipation to <200mW at 25°C ambient. This may cause junction temperatures to exceed 150°C under 300mA load, triggering thermal shutdown or accelerated wear.

Can the N-channel and P-channel share the same gate drive signal in a high-side switch configuration?

Yes-the matched |V_GS(TH)| (≤1.0V) allows both channels to turn on with a single 1.8V–2.5V logic signal, provided the P-channel source is tied to V_CC and the N-channel source is grounded. This configuration is validated in Diodes' application note AN-8001 for automotive load switching.