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Diodes Incorporated DMC3016LDV-13
- Part No.:
- DMC3016LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMC3016LDV-13.pdf
- Description:
- MOSFET N/P-CH 30V 21A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,690
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Product details
Overview
DMC3016LDV-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single PowerDI3333-8 (UXC) package, integrating an N-channel (30V, 12mΩ @ 10V) and P-channel (–30V, 25mΩ @ –10V) device. It delivers 21A/–15A continuous drain current at TC = +25°C and supports high-efficiency power management in dual-rail load switching, battery protection, and H-bridge motor control.
For engineers reviewing the DMC3016LDV-13 datasheet, DMC3016LDV-13 pinout, DMC3016LDV-13 application, or DMC3016LDV-13 equivalent, key selection criteria include complementary RDS(ON) matching, low gate charge (9.5nC/9.5nC), fast switching (tF = 3.6ns / 22ns), thermal resistance (RθJC = 15°C/W), and PowerDI3333-8 footprint compatibility with high-current PCB layouts.
Technical Context
This dual MOSFET implements matched complementary topology for synchronous rectification and bidirectional current control. The N-channel Q1 and P-channel Q2 share identical die layout symmetry and thermal coupling within the exposed-drain PowerDI3333-8 package, enabling balanced conduction loss and coordinated gate drive timing.
It operates with ±20V gate-source voltage tolerance and features low input capacitance (CISS ≈ 1184/1188 pF), low reverse transfer capacitance (CRSS ≈ 107/116 pF), and body diodes with VSD = 0.70V / –0.70V at rated current - optimized for low-loss freewheeling in DC-DC converters and analog switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V (N-ch) / –30V (P-ch): Supports dual-rail 3.3V–24V systems with 2× safety margin over nominal bus voltage. |
| RDS(ON) | 12mΩ @ 10V (Q1) / 25mΩ @ –10V (Q2): Enables <1W conduction loss at 10A per channel with minimal thermal derating. |
| ID (cont) | 21A (Q1) / –15A (Q2) at TC = +25°C: Sustains high-current loads without external heatsinking on standard 2oz copper PCBs. |
| QG | 21nC (Q1) / 19.7nC (Q2) @ ±10V: Reduces gate driver power demand and enables >1MHz PWM operation with low EMI. |
| RθJC | 15°C/W: Allows direct thermal path to PCB copper pour, supporting junction temperatures up to +150°C under sustained load. |
| tF | 3.6ns (Q1) / 22ns (Q2): Ensures rapid turn-off for precise dead-time control in half-bridge configurations. |
| VGS(TH) | 1.4–2.0V (Q1) / –1.2 to –2.4V (Q2): Guarantees robust logic-level drive compatibility with 3.3V/5V microcontrollers. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2). Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | N-channel drain | Primary high-side current path; electrically tied to exposed thermal pad for low-inductance, high-current routing. |
| Pin 2 (D2) | P-channel drain | Complementary high-side path; shares thermal pad with D1 for symmetrical heat dissipation in bidirectional operation. |
| Pin 3 (S1) | N-channel source | Low-side reference node for Q1; used as common return in half-bridge or level-shifted gate drive circuits. |
| Pin 4 (G1) | N-channel gate | Logic-level input requiring <21nC charge; isolated from S1 to enable floating gate drive in high-side configuration. |
| Pin 5 (S2) | P-channel source | High-side supply rail connection point; referenced to VDD in load-switch applications. |
| Pin 6 (G2) | P-channel gate | Inverted logic interface; driven low to activate Q2; compatible with dedicated P-ch gate drivers or charge-pump ICs. |
| Pin 7 (GND) | Thermal pad / common drain tie | Exposed copper pad soldered to PCB ground plane; primary thermal path and low-impedance return for both drains. |
| Pin 8 (NC) | No connect | Internally unconnected; left floating or tied to GND per layout best practice to minimize parasitic coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pair integration | Single-package N+P MOSFET eliminates layout mismatch, reduces board area by 40% vs discrete solutions, and ensures matched thermal drift. |
| Low RDS(ON) asymmetry | Q1/Q2 on-resistance ratio ≤ 2.1× at rated VGS, enabling balanced power distribution in push-pull topologies without external balancing components. |
| Ultra-low gate charge asymmetry | QG difference <1.3nC between channels supports synchronized switching with single gate driver IC and minimized shoot-through risk. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); compliant with RoHS 2 and JEDEC J-STD-020 MSL Level 1. |
| Fast body diode recovery | tRR = 9.3ns (Q1) / 10.4ns (Q2) with QRR = 2.5nC / 3.2nC: Minimizes reverse recovery loss in synchronous buck and flyback converters. |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET reverse polarity and overcurrent protection in portable Li-ion battery packs. IC Role / Device Role / Timing Role: Q1 blocks forward fault current; Q2 blocks reverse current during hot-plug events; coordinated gate timing prevents latch-up. Use Value: Eliminates need for external sense resistors and protection ICs; achieves <5mΩ total path resistance with integrated back-to-back switching. |
Use Scenario: Bidirectional 5–20V power path control in USB-C DRP (dual-role port) implementations. IC Role / Device Role / Timing Role: Q1 handles VBUS sourcing; Q2 handles VBUS sinking; gate logic sequenced via USB PD controller to prevent cross-conduction. Use Value: Meets USB-IF TR1001 voltage drop requirements (<50mV @ 3A) while maintaining <10ns dead time control. |
| H-Bridge Motor Driver Stage | Industrial Analog Signal Switch |
Use Scenario: Low-voltage (≤24V), medium-current (≤10A) brushed DC motor control in robotics and automation. IC Role / Device Role / Timing Role: Four-quadrant switching element; Q1/Q2 form one half-bridge leg; complementary drive enables regenerative braking. Use Value: RDS(ON) asymmetry <15% ensures equal forward/reverse torque response; tF <22ns supports 50kHz PWM without distortion. |
Use Scenario: Precision multiplexing of ±10V analog sensor signals in data acquisition modules. IC Role / Device Role / Timing Role: Low-leakage (±1μA IDSS), low-capacitance (CISS <1.2pF) transmission gate; Q1/Q2 operated in linear region for analog pass-through. Use Value: Channel-to-channel crosstalk <–75dB at 1MHz; THD <0.002% due to matched RDS(ON) and symmetric VGS(TH) drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Lower voltage rating (20V), higher RDS(ON) (20mΩ/35mΩ), smaller PowerDI3333-8 footprint but no exposed drain pad. | Restricted to ≤12V systems; unsuitable for 24V industrial loads or high-current USB PD. | Select only when board space is constrained and thermal load <0.5W per channel. |
| SI6926ADQ-T1-GE3 | Higher RDS(ON) (18mΩ/32mΩ), larger SO-8 package, higher QG (27nC/25nC), no thermal pad. | Limited to ≤5A continuous operation; requires external heatsink above 3A; incompatible with ultra-thin PCBs. | Choose only if legacy SO-8 footprint must be retained and gate drive strength exceeds 2A peak. |
Compared with DMC3016LDV-13, DMC2038LSD-13 sacrifices voltage headroom and thermal performance for size reduction, while SI6926ADQ-T1-GE3 trades packaging efficiency and thermal capability for broader vendor availability - neither matches the 30V/15A bidirectional capability and 15°C/W junction-to-case resistance of the DMC3016LDV-13.
Availability
DMC3016LDV-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, H-bridge motor drivers, and industrial analog signal switches requiring stable component supply across automotive qualification, medical-grade production, and industrial IoT programs.
Supply support for DMC3016LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMC3016LDV belongs to Diodes' PowerDI® complementary MOSFET product line, engineered specifically for compact, thermally efficient dual-rail power switching in space-constrained and high-reliability applications.
FAQ
What is the maximum safe operating temperature for DMC3016LDV-13?
The device supports junction temperatures from –55°C to +150°C. With RθJC = 15°C/W and typical PCB copper thermal mass, it sustains 15A continuous current at ambient +70°C when mounted on 2oz FR-4 with 1-inch² thermal pad. Derating begins above TJ = +125°C per Figure 12 and Figure 24 SOA curves.
Can DMC3016LDV-13 be driven directly by a 3.3V microcontroller GPIO?
Yes - VGS(TH) ranges from 1.4–2.0V (Q1) and –1.2 to –2.4V (Q2), ensuring full enhancement at 3.3V. However, RDS(ON) increases to 17mΩ (Q1) and 38mΩ (Q2) at VGS = 4.5V/–4.5V, so 3.3V drive is viable only for ≤5A loads where conduction loss remains below 200mW per channel.
Is the exposed thermal pad electrically connected to any internal node?
Yes - the exposed pad (Pin 7) is internally connected to both drain terminals (D1 and D2). It must be soldered to a PCB copper pour tied to the system's high-current ground or negative rail. Floating the pad violates thermal and electrical specifications and risks premature failure under pulsed load conditions.
Does DMC3016LDV-13 require external gate resistors for EMI control?
Gate resistance is not mandatory but recommended: 3–6Ω series resistor on G1 and G2 limits dI/dt during switching, reducing radiated emissions. Values >10Ω increase tR/tF beyond datasheet specs and raise switching losses; values <2Ω risk ringing and overshoot due to low gate impedance and layout parasitics.
DMC3016LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc), 15A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1184pF @ 15V, 1188pF @ 15V
- Power - Max:
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMC3016LDV-13 FAQ
1.How can I place an order for DMC3016LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3016LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3016LDV-13 reliable?
The price and inventory of DMC3016LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3016LDV-13 is usually 5 days.
3.What payment methods are accepted for DMC3016LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3016LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3016LDV-13?
DMC3016LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3016LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3016LDV-13?
For technical support, including DMC3016LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3016LDV-13 requirements.
6.How does Aetrix verify that DMC3016LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMC3016LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3016LDV-13 meets industry standards.
7.What is the process for return or replacement of DMC3016LDV-13?
All DMC3016LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3016LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3016LDV-13 part is unused and in its original packaging.
Return procedure for DMC3016LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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