Diodes Incorporated DMC3016LDV-7

Overview

DMC3016LDV-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single PowerDI3333-8 (UXC) package, integrating an N-channel (30V, 12mΩ @ 10V) and P-channel (-30V, 25mΩ @ -10V) device. It delivers 21A/–15A continuous drain current at TC = +25°C and supports fast switching with 4.5ns/3.7ns turn-on delay for Q1/Q2, enabling high-efficiency dual-polarity power management in compact DC-DC converters.

For engineers reviewing the DMC3016LDV-7 datasheet, DMC3016LDV-7 pinout, DMC3016LDV-7 application, or DMC3016LDV-7 equivalent, this dual-channel MOSFET is selected for synchronous rectification, H-bridge motor control, and bidirectional load switching where low R_DS(ON), matched thermal behavior, and space-constrained board layouts are critical.

Technical Context

This device implements a monolithic complementary pair topology with electrically isolated but thermally coupled N- and P-channel channels in a single exposed-drain PowerDI3333-8 package. Each channel features independent gate terminals and shares a common thermal path to the exposed drain pad, enabling precise thermal tracking during bidirectional conduction.

The N-channel exhibits 9.5mΩ typical R_DS(ON) at V_GS = 10V and 14mΩ at 4.5V, while the P-channel delivers 21mΩ typical at V_GS = –10V and 31mΩ at –4.5V. Both channels support ±20V gate drive and feature low input capacitance (1184pF/1188pF) and fast switching (t_r = 3.3ns/2.6ns), optimized for high-frequency synchronous buck and half-bridge topologies.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2) on bottom side. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSD-7 and SI6926ADQ-T1-GE3, the DMC3016LDV-7 provides superior 30V robustness, lower conduction loss, and monolithic thermal tracking-critical for high-power density motor control and USB-C PD designs where voltage margin and thermal stability are non-negotiable.

Availability

DMC3016LDV-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, synchronous buck converters, and H-bridge motor controllers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for DMC3016LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.

The DMC3016LDV-7 belongs to Diodes' PowerDI® complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion where thermal co-location and matched switching characteristics are essential.

FAQ

What is the maximum allowable gate-source voltage for each channel?

The absolute maximum gate-source voltage is ±20V for both the N-channel (Q1) and P-channel (Q2) devices. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS to ≤±12V under transient conditions, especially during hot-plug events in USB-C applications.

Can DMC3016LDV-7 be used in a high-side P-channel configuration without a charge pump?

Yes-the P-channel (Q2) is fully specified for –30V V_DSS and –15A I_D with –10V gate drive, enabling direct high-side switching from a 3.3V or 5V logic rail when the source is tied to the positive rail. No charge pump is needed, though gate drive slew rate must remain below 10V/ns to avoid EMI.

How does the shared thermal pad affect PCB layout requirements?

The exposed drain pads (Pins 1 and 2) are internally connected to their respective drains and must be soldered to a single, unified copper pour with ≥6 thermal vias (0.3mm diameter) to an inner ground plane. Splitting the pad or using isolated pours degrades R_θJC from 15°C/W to >40°C/W, risking thermal shutdown above 1.2W total dissipation.

Is avalanche energy rating validated per JEDEC JESD24-11?

Yes-the device is rated for 24mJ single-pulse avalanche energy (E_AS) for both channels under L = 0.1mH, tested per JEDEC JESD24-11. This enables robust operation in inductive load switching (e.g., solenoid drivers) without external snubbers, provided peak I_AS (22A/–22A) is not exceeded.