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Diodes Incorporated DMC3016LNS-13
- Part No.:
- DMC3016LNS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMC3016LNS-13.pdf
- Description:
- MOSFET N/P-CH 30V 9A PWRDI3333
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
DMC3016LNS-13 from Diodes Incorporated is a complementary dual MOSFET in a single POWERDI®3333-8 (UXB) package, integrating an N-channel (30V, 16mΩ @ 10V) and P-channel (–30V, 28mΩ @ –10V) enhancement-mode MOSFET. It delivers 9.0A/–6.8A continuous drain current at 25°C, features low input capacitance (Ciss = 1184/1188 pF), and supports fast switching (tD(ON) = 4.5/3.7 ns). It is used in compact DC-DC buck-boost converters requiring bidirectional power control.
For engineers reviewing the DMC3016LNS-13 datasheet, DMC3016LNS-13 pinout, DMC3016LNS-13 application, or DMC3016LNS-13 equivalent, key selection criteria include complementary RDS(ON) matching, thermal resistance (RθJA = 65°C/W with thermal pad), gate charge asymmetry (Qg = 21 nC / 19.7 nC), and SOA-limited pulsed current capability (IDM = ±55 A).
Technical Context
This device implements a monolithic complementary pair topology where Q1 (N-channel) and Q2 (P-channel) share a common source configuration in an 8-pin PowerDI package. Its gate threshold voltages are asymmetric (VGS(TH) = +1.4–2.0 V for Q1; –1.2––2.4 V for Q2), enabling independent turn-on control in half-bridge or level-shifting applications.
The integrated body diodes exhibit matched forward voltage (VSD = 0.7–1.2 V / –0.7––1.2 V) and reverse recovery characteristics (tRR = 9.3/10.4 ns, QRR = 2.5/3.2 nC), supporting synchronous rectification in high-frequency (>1 MHz) topologies without external Schottky diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | ±30 V - Supports rail-to-rail operation in 24V industrial bus and 12V automotive auxiliary systems. |
| RDS(ON) Q1/Q2 | 16 mΩ / 28 mΩ @ VGS = ±10 V - Enables <1.2 W conduction loss at 7A in dual-phase load switching. |
| ID max (TA = 25°C) | 9.0 A / –6.8 A - Sustains peak load currents in USB PD 3.0 sink-side power path control. |
| Ciss | 1184 pF / 1188 pF - Limits gate drive power to <1.5 mW at 1 MHz switching with 10V swing. |
| tD(ON)/tD(OFF) | 4.5 ns / 14 ns (Q1); 3.7 ns / 36 ns (Q2) - Enables precise dead-time control in 500 kHz–1 MHz half-bridge drivers. |
| RθJA | 65 °C/W (with thermal pad) - Allows 2.0 W dissipation at ≤85°C ambient in space-constrained PCB layouts. |
| EAS | 24 mJ - Withstands single-pulse inductive kickback up to 22 A in relay driver or solenoid interface circuits. |
Pinout & Package
Package: POWERDI®3333-8 (Type UXB), surface-mount, thermally enhanced plastic case with exposed copper thermal pad (D2/D1/S2/S1 pins share internal die attach to pad). Dimensions: 3.30 × 3.30 × 0.80 mm, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Main high-side current path; connects to input rail in high-side switch configurations. |
| S1 | N-channel source | Common source node for Q1; tied to gate driver reference in half-bridge setups. |
| G1 | N-channel gate | Control input for N-MOSFET; requires ≥2.0 V threshold margin for reliable turn-on. |
| D2 | P-channel drain | Main low-side current path; connects to load return or ground-referenced output. |
| S2 | P-channel source | Common source node for Q2; electrically tied to S1 internally in complementary pair layout. |
| G2 | P-channel gate | Control input for P-MOSFET; driven negative relative to S2 for turn-on in high-side applications. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single-package N+P MOSFET eliminates inter-device timing skew and layout mismatch in bidirectional switches. |
| Low RDS(ON) Asymmetry Ratio | Q1/Q2 RDS(ON) ratio = 16/28 = 0.57 - Enables balanced conduction loss in push-pull H-bridge motor drivers. |
| Matched Body Diode Recovery | tRR difference = 1.1 ns; QRR difference = 0.7 nC - Reduces shoot-through risk during synchronous rectification transitions. |
| Thermally Optimized Package | RθJC = 12°C/W - Enables direct thermal coupling to inner-layer copper pour for >1.5× power density vs. SO-8 equivalents. |
| Green Compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 2 compliant - Meets IPC-1752A material declaration requirements. |
Applications
| USB Type-C Power Delivery Sink | Industrial 24V DC-DC Buck-Boost Converter |
|---|---|
|
Use Scenario: Bidirectional power path control in USB PD 3.0 sink devices managing 5–20 V input range and 3 A max current. IC Role / Device Role / Timing Role: Dual-channel load switch implementing input rail selection and reverse-current blocking via coordinated Q1/Q2 gate timing. Use Value: Eliminates need for discrete N+P MOSFETs and level-shifters, reducing BOM count by 3 components and PCB area by 40%. |
Use Scenario: High-efficiency (≥94%) non-isolated buck-boost regulator for programmable logic controller I/O modules operating from 18–32 V DC input. IC Role / Device Role / Timing Role: Synchronous rectifier pair in four-switch topology, switching at 600 kHz with adaptive dead-time control. Use Value: Achieves 0.8°C/W lower junction rise vs. discrete SO-8 MOSFETs under 5 A load, enabling fanless enclosure design. |
| Automotive Body Control Module Load Driver | Smart Home Zigbee/Z-Wave Relay Interface |
|
Use Scenario: Driving 12 V incandescent lamps and solenoids in vehicle door modules with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: High-side (Q1) and low-side (Q2) switch controlling lamp current direction and polarity reversal for diagnostics. Use Value: Withstands 100 V load dump transients (via EAS = 24 mJ) and meets ISO 7637-2 Pulse 5a immunity without external TVS. |
Use Scenario: Solid-state replacement for electromechanical relays in smart lighting controllers handling 120 V AC resistive loads up to 10 A. IC Role / Device Role / Timing Role: Back-to-back configured Q1+Q2 acting as AC switch with zero-crossing turn-on enabled by gate timing synchronization. Use Value: Reduces acoustic noise and contact wear; enables 100,000-cycle lifetime vs. 10,000-cycle mechanical relay, with <10 ms response time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower RDS(ON): 12 mΩ / 20 mΩ @ ±10 V; higher Ciss (1420/1450 pF); same POWERDI-3333-8 package. | Better conduction efficiency but slower switching; unsuitable for >800 kHz designs due to increased gate charge (Qg = 25/23 nC). | Select when thermal budget is tighter than switching speed requirement (e.g., 24/48 V telecom DC-DC). |
| SI6926ADQ-T1-GE3 | Different package (SO-8); higher RDS(ON): 20 mΩ / 35 mΩ @ ±10 V; lower thermal performance (RθJA = 85°C/W). | Requires larger PCB footprint and additional thermal vias; not drop-in compatible due to pinout mismatch (G1/G2 swapped). | Choose only if legacy SO-8 footprint must be retained and power density is secondary to procurement continuity. |
Compared with DMC3016LNS-13, DMC2038LVT-7 trades higher gate drive loss for lower conduction loss, while SI6926ADQ-T1-GE3 sacrifices thermal efficiency and layout compactness for broader distributor availability in standard SO-8 form factor.
Availability
DMC3016LNS-13 is available at Aetrix Electronics and suitable for USB PD sink implementations, industrial DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for DMC3016LNS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMC3016LNS belongs to Diodes' PowerDI® family of thermally optimized MOSFETs, engineered specifically for high-density power management in space-constrained industrial and automotive applications where thermal resistance and RDS(ON) matching are critical.
FAQ
What is the maximum safe operating junction temperature for DMC3016LNS-13?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above +125°C reduces safe operating area (SOA) limits significantly-pulse width must be reduced to ≤100 µs at 150°C ambient to avoid thermal runaway. Derating curves in Figure 25 confirm 65°C/W thermal resistance applies only with proper 1-inch² copper thermal pad.
Can DMC3016LNS-13 be used in a synchronous buck converter as both high-side and low-side switches?
No-it is not designed for synchronous buck topology. The N-channel (Q1) and P-channel (Q2) share a common source terminal (S1/S2), making it suitable for high-side/low-side switch pairs or back-to-back AC switches, but not for the floating high-side gate drive required in buck converters. Use dedicated high-side drivers with external bootstrap circuitry instead.
How does the gate threshold voltage mismatch between Q1 and Q2 affect dead-time design?
Q1's VGS(TH) range (+1.4–2.0 V) and Q2's (–1.2––2.4 V) create a 0.2–0.4 V effective threshold offset. This requires ≥150 ns minimum dead time in 500 kHz operation to prevent shoot-through, verified by tD(OFF) = 14 ns (Q1) and 36 ns (Q2) propagation delays. Gate driver ICs must provide independent, adjustable delay paths for each channel.
Is the POWERDI®3333-8 package lead-free and RoHS-compliant?
Yes-DMC3016LNS-13 uses matte tin annealed over copper leadframe and fully complies with EU Directive 2011/65/EU (RoHS 2). It contains no intentionally added lead, bromine, chlorine, or antimony above specified thresholds (<900 ppm halogens, <1000 ppm Sb), certified per Diodes Incorporated's "Green" product definition.
DMC3016LNS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta), 6.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1184pF @ 15V, 1188pF @ 15V
- Power - Max:
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMC3016LNS-13 FAQ
1.How can I place an order for DMC3016LNS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3016LNS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3016LNS-13 reliable?
The price and inventory of DMC3016LNS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3016LNS-13 is usually 5 days.
3.What payment methods are accepted for DMC3016LNS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3016LNS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3016LNS-13?
DMC3016LNS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3016LNS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3016LNS-13?
For technical support, including DMC3016LNS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3016LNS-13 requirements.
6.How does Aetrix verify that DMC3016LNS-13 is sourced from the original manufacturer or authorized distributors?
All DMC3016LNS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3016LNS-13 meets industry standards.
7.What is the process for return or replacement of DMC3016LNS-13?
All DMC3016LNS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3016LNS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3016LNS-13 part is unused and in its original packaging.
Return procedure for DMC3016LNS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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