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Diodes Incorporated DMC3016LNS-7
- Part No.:
- DMC3016LNS-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMC3016LNS-7.pdf
- Description:
- MOSFET N/P-CH 30V 9A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
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Product details
Overview
DMC3016LNS-7 from Diodes Incorporated is a complementary dual MOSFET in a single POWERDI®3333-8 (UXB) package, integrating an N-channel (30V, 16mΩ @ 10V) and P-channel (−30V, 28mΩ @ −10V) enhancement-mode MOSFET. It delivers 9.0A/−6.8A continuous drain current at 25°C and supports high-efficiency half-bridge and H-bridge power management in compact DC-DC converters.
For engineers reviewing the DMC3016LNS-7 datasheet, DMC3016LNS-7 pinout, DMC3016LNS-7 application, or DMC3016LNS-7 equivalent, key selection factors include its matched RDS(ON) pair, low gate charge (Qg = 21nC / 19.7nC), fast switching (tF = 3.6ns / 22ns), thermal resistance (RθJA = 65°C/W with thermal pad), and RoHS-compliant green packaging.
Technical Context
This dual MOSFET implements a complementary topology where Q1 (N-channel) and Q2 (P-channel) share identical die geometry and thermal coupling within one monolithic substrate. Gate threshold voltages are tightly specified (1.4–2.0V for Q1; −1.2 to −2.4V for Q2), enabling precise synchronous rectification control without external level-shifting.
The device uses a thermally enhanced POWERDI®3333-8 (UXB) leadframe with exposed drain pads for both channels, supporting simultaneous conduction and reverse recovery under bidirectional current flow. Its low Ciss (1184pF / 1188pF) and Crss (107pF / 116pF) minimize Miller-induced shoot-through risk in high-frequency PWM applications up to 1MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V (N-ch) / −30V (P-ch): Supports 24V rail systems with 2× safety margin against transients. |
| RDS(ON) | 16mΩ @ 10V (Q1), 28mΩ @ −10V (Q2): Enables <1.2W conduction loss at 7A per channel with minimal heatsinking. |
| ID (continuous) | 9.0A (Q1), −6.8A (Q2) at TA = 25°C: Sustains peak load currents in motor drivers and USB PD power switches. |
| Qg | 21nC (Q1), 19.7nC (Q2) at rated VGS: Reduces gate drive power and enables efficient operation with low-side gate drivers like DIODES AP21xx series. |
| tF | 3.6ns (Q1), 22ns (Q2): Ensures clean turn-off transitions critical for minimizing cross-conduction losses in half-bridge topologies. |
| RθJA | 65°C/W (with thermal pad): Allows 2.0W dissipation at ambient ≤70°C-sufficient for unheatsinked 5V–24V buck converter output stages. |
| Ciss | 1184pF (Q1), 1188pF (Q2): Matches closely across channels to simplify gate driver design and reduce layout sensitivity. |
Pinout & Package
Package: POWERDI®3333-8 (Type UXB), surface-mount, thermally enhanced plastic case with exposed drain pads (D1/D2) and integrated leadframe for low-inductance switching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | N-channel drain | Primary high-side switching node; electrically tied to exposed copper pad for thermal and EMI performance. |
| S1 | N-channel source | Return path for N-ch current; connects to ground or low-side switch node in half-bridge configuration. |
| G1 | N-channel gate | Control input requiring 10V logic-level drive; low Ciss enables fast edge rates with minimal gate resistor. |
| D2 | P-channel drain | Shared drain terminal with D1 in common-drain configuration; used as output node in high-side switch layouts. |
| S2 | P-channel source | Connects to positive rail (VIN) in high-side switch; body diode conducts during dead-time in bridge circuits. |
| G2 | P-channel gate | Driven with inverted logic (0V = ON); compatible with standard microcontroller GPIO or dedicated high-side gate drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Matched N/P-channel parameters in one footprint eliminate layout mismatch and reduce PCB area by >40% vs discrete solutions. |
| Low RDS(ON) Asymmetry | Q1/Q2 on-resistance ratio of 16mΩ/28mΩ ensures balanced conduction loss in push-pull topologies operating near 50% duty cycle. |
| Thermally Coupled Die | Shared junction-to-case thermal path (RθJC = 12°C/W) enables accurate temperature tracking between channels for thermal shutdown coordination. |
| Green RoHS Compliance | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A Tier 1 reporting requirements. |
| Low Gate Charge Ratio | Qg(Q1)/Qg(Q2) = 21nC/19.7nC minimizes timing skew between channel transitions, reducing dead-time uncertainty. |
Applications
| USB-C Power Delivery Switch | Industrial Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: Bidirectional 20V/5A power path switching in portable chargers and docking stations. IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS routing and reverse current blocking with integrated body diodes. Use Value: Eliminates need for external Schottky diodes and reduces BOM count by two MOSFETs while maintaining <15mΩ total path resistance. |
Use Scenario: 24V brushed DC motor control in factory automation I/O modules. IC Role / Device Role / Timing Role: Complementary half-bridge output stage driving motor windings with synchronous rectification. Use Value: Achieves >94% efficiency at 3A load due to matched RDS(ON) and low Qg, reducing thermal derating requirements. |
| Point-of-Load DC-DC Converter | Automotive Body Control Module |
|
Use Scenario: 5V-to-3.3V synchronous buck regulator for FPGA core supplies in telecom baseband cards. IC Role / Device Role / Timing Role: High-frequency (500kHz) power stage with N-ch high-side and P-ch low-side switching. Use Value: Low Ciss/Crss enables stable operation without snubbers; RDS(ON) asymmetry optimized for 3.3V output regulation. |
Use Scenario: Window lift and seat position control using 12V battery-supplied H-bridge drivers. IC Role / Device Role / Timing Role: Compact dual-MOSFET H-bridge with integrated reverse polarity protection and overcurrent sensing nodes. Use Value: AEC-Q101 stress-tested variant available; qualified for −40°C to +125°C ambient with 150°C junction rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Lower voltage rating (20V/−20V), lower RDS(ON) (9.5mΩ/14mΩ), higher ID (12A/−9A). | Better suited for 5V–12V logic-level systems; not rated for 24V industrial rails. | Select when operating below 15V and prioritizing conduction loss over voltage headroom. |
| SI6926ADQ-T1-GE3 | SO-8 package, higher RDS(ON) (22mΩ/35mΩ), higher Qg (26nC/24nC), no thermal pad. | Larger footprint, 3× higher RθJA (190°C/W), unsuitable for >1W continuous dissipation. | Choose only if legacy SO-8 board space is fixed and thermal budget allows derating to 4A per channel. |
Compared with DMC3016LNS-7, DMC2038LSD-7 offers superior conduction efficiency below 15V but sacrifices transient robustness, while SI6926ADQ-T1-GE3 trades thermal performance and switching speed for package compatibility-making DMC3016LNS-7 optimal for space-constrained 24V industrial power stages demanding <65°C/W thermal resistance.
Availability
DMC3016LNS-7 is available at Aetrix Electronics and suitable for USB-C power delivery switches, industrial motor driver half-bridges, and point-of-load DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.
Supply support for DMC3016LNS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers across Asia, Europe, and the US, serving industrial, computing, consumer, and automotive markets.
The DMC3016LNS belongs to Diodes' POWERDI®3333-8 complementary MOSFET product line, engineered specifically for high-density, high-efficiency power conversion in space-limited applications such as portable electronics and smart sensors.
FAQ
What is the maximum safe operating junction temperature for DMC3016LNS-7?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per DS38129 Rev. 2. Derating begins at +70°C ambient when mounted on a 2oz FR-4 board with thermal bias; sustained operation above +135°C junction requires active cooling or reduced ID to maintain reliability per JEDEC JESD22-A108.
Can DMC3016LNS-7 be used in a high-side P-channel switch configuration without a gate driver?
Yes-its −1.2V to −2.4V VGS(TH) allows direct GPIO control from 3.3V or 5V microcontrollers when the source is tied to VIN. However, full enhancement at −6.8A requires −10V gate drive; for logic-level operation below −4.5V, derate ID to −5.8A per datasheet Figure 15.
Does the DMC3016LNS-7 have avalanche energy rating, and how is it applied in circuit protection?
Yes-it is rated for 22A avalanche current (IAS) and 24mJ single-pulse avalanche energy (EAS) with L = 0.1mH. This rating enables robust handling of inductive kickback in relay drivers and solenoid controls without external clamping diodes, provided pulse duration remains ≤380μs at 1% duty cycle.
How does the POWERDI®3333-8 (UXB) package compare thermally to SO-8 for the same power dissipation?
With thermal pad implementation, DMC3016LNS-7 achieves RθJA = 65°C/W versus ~190°C/W for standard SO-8 equivalents. This 66% reduction allows 2.0W continuous dissipation at +70°C ambient-versus ~0.6W for SO-8-enabling smaller heatsinks or fanless operation in enclosed enclosures.
DMC3016LNS-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta), 6.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1184pF @ 15V, 1188pF @ 15V
- Power - Max:
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8
DMC3016LNS-7 FAQ
1.How can I place an order for DMC3016LNS-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3016LNS-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3016LNS-7 reliable?
The price and inventory of DMC3016LNS-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3016LNS-7 is usually 5 days.
3.What payment methods are accepted for DMC3016LNS-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3016LNS-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3016LNS-7?
DMC3016LNS-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3016LNS-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3016LNS-7?
For technical support, including DMC3016LNS-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3016LNS-7 requirements.
6.How does Aetrix verify that DMC3016LNS-7 is sourced from the original manufacturer or authorized distributors?
All DMC3016LNS-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3016LNS-7 meets industry standards.
7.What is the process for return or replacement of DMC3016LNS-7?
All DMC3016LNS-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3016LNS-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3016LNS-7 part is unused and in its original packaging.
Return procedure for DMC3016LNS-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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