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Diodes Incorporated DMC3016LSD-13

Part No.:
DMC3016LSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC3016LSD-13.pdf
Description:
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Quantity:
Payment:
Payment
Shipping:
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Inventory:10,910

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Product details

Overview

DMC3016LSD-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SO-8 package, integrating an N-channel (30V, 16mΩ @ 10V) and P-channel (-30V, 28mΩ @ -10V) device for synchronous buck or H-bridge power stages. It delivers 8.2A/–6.2A continuous drain current at 25°C and supports high-efficiency DC-DC converters with fast switching (tR = 16.5ns, tF = 5.6ns) and low gate charge (QG = 25.1nC / –22nC).

For engineers reviewing the DMC3016LSD-13 datasheet, DMC3016LSD-13 pinout, DMC3016LSD-13 application, or DMC3016LSD-13 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/–4.5V, AEC-Q101 qualification for automotive-grade reliability, and SO-8 thermal performance (RθJA = 78°C/W with 1-in² copper).

Technical Context

This dual MOSFET implements complementary switching in half-bridge configurations where the N-channel handles high-side or low-side conduction and the P-channel enables efficient high-side drive without bootstrap circuitry. Its matched threshold voltages (VGS(th) = 1.0–3.0V / –1.0 to –3.0V) and symmetric dynamic characteristics (CISS = 1415pF / 1241pF) support balanced turn-on/turn-off timing.

The device operates across –55°C to +150°C junction temperature, with avalanche-rated ruggedness (EAS = 25mJ) and body diode forward voltage (VSD = 0.7–1.0V / –0.7 to –1.2V) optimized for freewheeling in synchronous rectification. Thermal resistance is specified for both minimal pad layout (RθJA = 102°C/W) and enhanced copper (RθJA = 47°C/W).

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V (N-ch), –30V (P-ch): Supports 24V input rail systems with 20% margin against transients.
RDS(ON) @ VGS = 10V 16mΩ (N), 28mΩ (P): Enables <1.3W conduction loss at 8A/–6.2A in compact SO-8 footprint.
QG @ VGS = 10V 25.1nC (N), –22nC (P): Reduces gate drive power and allows >1MHz switching with standard drivers.
tR/tF 16.5ns/5.6ns (N), 17.1ns/40.4ns (P): Minimizes overlap loss in synchronous buck topologies.
ID Continuous 8.2A (N), –6.2A (P) at TA = 25°C: Sustains full load in 12V–24V POL converters with 1-in² copper.
RθJA 78°C/W (enhanced layout): Limits junction rise to <62°C at 1.2W dissipation, enabling fanless operation.
AEC-Q101 Qualified: Validated for automotive power management including infotainment and ADAS subsystems.

Pinout & Package

Package: SO-8, surface-mount, molded plastic (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (G1) N-channel gate Control input for high-side or low-side N-MOSFET; requires 10V for RDS(ON) optimization.
2 (S1) N-channel source Common source node for N-ch; connects to ground or switch node depending on topology.
3 (D1) N-channel drain Power output terminal for N-ch; bonded to exposed pad for thermal conduction.
4 (D2) P-channel drain Shared drain connection with N-ch drain; forms common switching node in half-bridge.
5 (S2) P-channel source High-side supply reference for P-ch; ties to input rail in high-side switch applications.
6 (G2) P-channel gate Control input for P-MOSFET; driven negative relative to S2 for full enhancement.
7, 8 Exposed drain pad (D1/D2) Thermal and electrical connection to PCB copper; must be soldered for rated power dissipation.

Key Features

Feature Design Value
Complementary channel pairing Matched VGS(th) and RDS(ON) tracking ensures balanced dead-time control and reduced shoot-through risk.
Low QG/QGD ratio QGD/QG = 14% (N), 21% (P): Improves Miller immunity and enables stable high-frequency operation.
Enhanced thermal pad Exposed D1/D2 pad reduces RθJC to 12°C/W: Enables 1.6W dissipation with 25°C/W board-level thermal resistance.
Halogen- and antimony-free <900ppm Br, <900ppm Cl, <1000ppm Sb: Meets IPC-1752A Class 3 material declarations for green manufacturing.
Fast body diode recovery VSD = 0.7V @ 1A (N), –0.7V @ –2.1A (P): Low forward drop minimizes freewheeling loss in synchronous rectifiers.

Applications

Automotive Infotainment Power Supply Industrial PLC I/O Module

Use Scenario: 12V-to-3.3V/5V synchronous buck converter powering MCU, display, and audio codecs in head units.

IC Role / Device Role / Timing Role: Dual-channel power switch providing high-side (P-ch) and low-side (N-ch) conduction in single-phase regulator.

Use Value: AEC-Q101 qualification ensures operation over –40°C to +105°C ambient; matched RDS(ON) prevents duty-cycle skew under load transients.

Use Scenario: Isolated 24V-to-5V DC-DC stage supplying isolated CAN transceivers and analog sensor interfaces.

IC Role / Device Role / Timing Role: Half-bridge switch in active clamp forward or flyback controller auxiliary winding drive.

Use Value: Low CISS (1415pF/1241pF) reduces EMI generation at 500kHz switching; SO-8 footprint simplifies layout in space-constrained DIN-rail modules.

LCD Backlight LED Driver USB-C PD Power Path

Use Scenario: Boost converter driving 4–6 series white LEDs from 5V USB input in portable monitors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in boost catch diode position to improve efficiency.

Use Value: VSD = 0.7V enables >92% efficiency at 1A LED current; low QG supports 1MHz PWM dimming without gate drive overhead.

Use Scenario: Input power path switch managing 5V/9V/15V/20V negotiation between USB-C port and system rail.

IC Role / Device Role / Timing Role: Bidirectional load switch using P-ch for reverse-current blocking and N-ch for low-loss forward conduction.

Use Value: RDS(ON) = 28mΩ (P) blocks >–20V reverse faults; 16mΩ (N) limits voltage drop to <130mV at 8A charging current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LSD-7 Lower voltage rating (20V/–20V), lower RDS(ON) (9.5mΩ/15mΩ @ 4.5V), higher QG (32nC/–28nC) Better suited for 5V–12V logic-supply rails; less suitable for 24V industrial inputs due to reduced VDSS margin Select when operating below 15V input and prioritizing conduction loss over switching speed.
Si7852DP-T1-GE3 Higher VDSS (40V/–40V), asymmetric RDS(ON) (12mΩ/22mΩ @ 10V), no AEC-Q101 qualification Supports wider input range (up to 36V) but lacks automotive reliability validation; larger SO-8 variant with different pinout Choose for non-automotive 24V systems requiring higher transient immunity and higher peak current (12A/–8A).

Compared with DMC3016LSD-13, DMC2038LSD-7 trades voltage headroom for lower conduction loss in low-voltage rails, while Si7852DP-T1-GE3 extends voltage capability at the cost of automotive qualification and introduces pinout incompatibility-making DMC3016LSD-13 optimal for AEC-Q101-compliant 24V synchronous buck designs.

Availability

DMC3016LSD-13 is available at Aetrix Electronics and suitable for automotive infotainment power supplies, industrial PLC I/O modules, LCD backlight drivers, and USB-C PD power path management requiring stable component supply and AEC-Q101 compliance.

Supply support for DMC3016LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.

The DMC3016LSD belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for synchronous rectification and half-bridge switching in harsh-environment power conversion systems.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 6.5A and the P-channel supports –5.0A at TA = +70°C with standard FR-4 layout (2oz copper, minimum pad). These values reflect derating from 8.2A/–6.2A at 25°C due to thermal resistance limitations (RθJA = 102°C/W). For higher current, use enhanced layout with 1-in² copper (RθJA = 47°C/W), enabling 8.4A/–6.4A at 70°C.

Does DMC3016LSD-13 support gate drive from 3.3V microcontrollers?

No. The N-channel requires ≥4.5V for usable RDS(ON) (15mΩ max), and the P-channel requires ≤–4.5V for 30mΩ operation. At 3.3V, RDS(ON) degrades significantly (N-ch >25mΩ, P-ch >50mΩ), increasing conduction loss and thermal stress. A dedicated gate driver with 5V–12V output is required for reliable enhancement-mode operation.

How is the exposed drain pad electrically configured in SO-8?

Pins 7 and 8 are internally connected to both D1 (N-channel drain) and D2 (P-channel drain), forming a single common drain node. This pad must be soldered to a large PCB copper area for thermal dissipation and serves as the primary current return path for both channels. It is not isolated and must be treated as a high-current, high-voltage node referenced to the switch node potential.

Is avalanche energy rating validated per JEDEC JESD24-1?

Yes. The datasheet specifies EAS = 25mJ for both channels with L = 0.1mH, tested at TA = +25°C per JEDEC JESD24-1 methodology. This rating applies to single-pulse unclamped inductive switching events and confirms ruggedness for flyback or boost converter primary-side snubbing, provided layout minimizes parasitic inductance in the drain loop.

DMC3016LSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8.2A, 6.2A
Rds On (Max) @ Id, Vgs:
16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1415pF @ 15V
Power - Max:
1.2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC3016LSD-13 FAQ

1.How can I place an order for DMC3016LSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC3016LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC3016LSD-13 reliable?

The price and inventory of DMC3016LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3016LSD-13 is usually 5 days.

3.What payment methods are accepted for DMC3016LSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3016LSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC3016LSD-13?

DMC3016LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC3016LSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC3016LSD-13?

For technical support, including DMC3016LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3016LSD-13 requirements.

6.How does Aetrix verify that DMC3016LSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC3016LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3016LSD-13 meets industry standards.

7.What is the process for return or replacement of DMC3016LSD-13?

All DMC3016LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3016LSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC3016LSD-13 part is unused and in its original packaging.

Return procedure for DMC3016LSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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