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Diodes Incorporated DMC3018LSD-13

Part No.:
DMC3018LSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC3018LSD-13.pdf
Description:
MOSFET N/P-CH 30V 9.1A/6A 8SO
Quantity:
Payment:
Payment
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Inventory:2,580

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Product details

Overview

DMC3018LSD-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SO-8 package, integrating one N-channel (30V, 20mΩ @ 10V) and one P-channel (-30V, 45mΩ @ -10V) device for bidirectional power control. It delivers 9.1A/–6A continuous drain current at 25°C and supports fast switching with 5.9–12.4nC total gate charge, enabling high-efficiency load switching in compact DC-DC converters.

For engineers reviewing the DMC3018LSD-13 datasheet, DMC3018LSD-13 pinout, DMC3018LSD-13 application, or DMC3018LSD-13 equivalent, key selection criteria include dual-channel RDS(on) matching at 4.5V/–4.5V, AEC-Q101 qualification, SO-8 thermal resistance (50°C/W), and low gate threshold (±1.0–2.1V) for 3.3V logic compatibility.

Technical Context

This dual MOSFET implements independent N- and P-channel channels in a single SO-8 footprint, sharing no internal connection between gates or sources-enabling fully asynchronous control of high-side and low-side paths. Its design targets synchronous rectification and H-bridge drive where matched VGS(th) (±1.0–2.1V) and RDS(on) temperature stability (±15% over –55°C to +125°C) reduce shoot-through risk.

The device uses planar trench-gate technology to achieve low input capacitance (Ciss = 631pF/722pF) and minimal reverse transfer capacitance (Crss = 99pF/92pF), supporting >1MHz switching in buck converters while maintaining <1.2V body diode forward voltage under 1A reverse conduction.

Key Specifications

ParameterValue and Actual Design Meaning
VDSSN-ch: 30V; P-ch: –30V - enables ±30V rail operation without breakdown in half-bridge configurations
RDS(on) @ VGS = 10VN-ch: 20mΩ; P-ch: 45mΩ - limits conduction loss to ≤180mW at 3A in N-ch path, ≤405mW at 3A in P-ch path
RDS(on) @ VGS = 4.5VN-ch: 32mΩ; P-ch: 65mΩ - ensures full enhancement with 3.3V microcontroller GPIOs
QgN-ch: 5.9–12.4nC; P-ch: 7.0–13.7nC - determines gate driver power requirement and switching transition time
TJ Range–55°C to +150°C - supports automotive under-hood and industrial motor-control environments
PD2.5W @ TA = 25°C - defines maximum steady-state power dissipation on FR-4 PCB with 2oz copper
CissN-ch: 631pF; P-ch: 722pF - sets Miller plateau duration and influences EMI profile in hard-switched topologies

Pinout & Package

SO-8 surface-mount package with exposed thermal pad (non-electrical), 1.27mm pitch, JEDEC MS-012AC compliant. Molded plastic body meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)P-channel gateAccepts negative gate drive relative to source; threshold –1.0V to –2.1V enables 3.3V logic-level turn-on with margin
2 (S1)P-channel sourceCommon source node for P-ch; tied to high-side rail in high-side switch configuration
3 (D1)P-channel drainOutput terminal for P-ch; connects to load when P-ch is active; shares thermal pad with D2/S2
4 (D2)N-channel drainOutput terminal for N-ch; connects to load return path; electrically isolated from D1
5 (S2)N-channel sourceCommon source node for N-ch; typically grounded in low-side switch; shares thermal pad with D1
6 (G2)N-channel gateAccepts positive gate drive; threshold +1.0V to +2.1V ensures reliable turn-on with 3.3V MCU outputs
7,8 (S1/S2)Source tie pointsInternally separate; external routing must maintain isolation unless intentionally paralleled for current sharing

Key Features

FeatureDesign Value
Complementary N+P pair in SO-8Reduces board area by 40% vs. discrete dual-SOIC solution; eliminates inter-device layout mismatch
Low RDS(on) at 4.5VN-ch 32mΩ / P-ch 65mΩ enables ≥85% efficiency in 5V-input load switches driving 2–4A loads
AEC-Q101 qualifiedValidated for automotive power management per stress test requirements including HTGB, HTRB, and TC2000
Halogen- and antimony-freeMeets <900ppm Br, <900ppm Cl, <1000ppm Sb - satisfies EU ELV and China RoHS environmental compliance mandates
Low Crss/Ciss ratioN-ch Crss/Ciss = 15.7%; P-ch Crss/Ciss = 12.7% - minimizes Miller-induced false turn-on during high dv/dt commutation

Applications

USB Power Delivery SwitchAutomotive Body Control Module

Use Scenario: Bidirectional 5V/20V USB PD port protection with overcurrent and reverse-polarity blocking.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS path (N-ch) and CC line biasing (P-ch) with independent enable timing.

Use Value: 32mΩ/65mΩ RDS(on) at 4.5V ensures <120mV drop at 3.5A, preserving PD negotiation voltage margins.

Use Scenario: Localized 12V load switching for door lock actuators, mirror heaters, and interior lighting.

IC Role / Device Role / Timing Role: High-side (P-ch) and low-side (N-ch) drivers in dual-output power distribution unit with independent PWM dimming control.

Use Value: AEC-Q101 qualification and –55°C to +150°C operation ensure reliability across vehicle lifecycle and ambient extremes.

Industrial PLC I/O ModulePortable Medical Instrument Power Path

Use Scenario: Isolated 24V digital output stage with short-circuit protected sourcing/sinking capability.

IC Role / Device Role / Timing Role: P-ch high-side switch (sourcing) and N-ch low-side switch (sinking) controlled via opto-isolated GPIOs.

Use Value: Matched gate thresholds (±1.0–2.1V) allow identical drive circuitry for both channels, reducing BOM count and layout complexity.

Use Scenario: Battery backup path selection between Li-ion pack and wall adapter in handheld diagnostic devices.

IC Role / Device Role / Timing Role: Reverse-current blocking MOSFET pair preventing backfeed from battery to adapter and vice versa.

Use Value: Low 1.2V body diode VSD (N-ch) and –1.2V VSD (P-ch) minimize forward conduction loss during automatic path handover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMC3021LSD-13Higher RDS(on): N-ch 28mΩ/42mΩ, P-ch 60mΩ/85mΩ @ 10V/4.5V; same SO-8, AEC-Q101Slightly lower efficiency at high current; better cost-per-watt in <2A applicationsSelect when thermal budget allows higher conduction loss and cost sensitivity outweighs 10–15% efficiency gain
SI6954DQ-T1-GE3Lower Qg: N-ch 4.5nC, P-ch 5.8nC; RDS(on) similar but not AEC-Q101 qualifiedSuperior switching speed in non-automotive SMPS; lacks automotive reliability validationPrefer for consumer-grade DC-DC converters requiring <100ns turn-off; avoid in automotive or industrial safety-critical systems

Compared with DMC3021LSD-13, DMC3018LSD-13 offers 29% lower N-ch RDS(on) at 4.5V, improving light-load efficiency; versus SI6954DQ-T1-GE3, it trades 1.4nC higher gate charge for AEC-Q101 compliance and 0.3V lower |VGS(th)| tolerance, enhancing 3.3V logic margin.

Availability

DMC3018LSD-13 is available at Aetrix Electronics and suitable for USB Power Delivery implementations, automotive body electronics, industrial PLC I/O modules, and portable medical instrument power-path management requiring stable component supply and AEC-Q101 assurance.

Supply support for DMC3018LSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.

The DMC3018LSD belongs to Diodes' AEC-Q101-qualified complementary MOSFET product line, engineered specifically for space-constrained bidirectional power control in automotive body electronics and industrial automation where thermal robustness and gate-drive compatibility with 3.3V logic are critical.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 7.7A and the P-channel supports –5A at TA = +70°C, as specified in the Absolute Maximum Ratings table. These values reflect derating due to reduced thermal headroom and are measured on FR-4 PCB with 2oz copper pads (RθJA = 50°C/W). Exceeding these currents requires forced-air cooling or enhanced heatsinking.

Can the N-channel and P-channel sources be tied together externally?

Yes, the S1 (P-ch source) and S2 (N-ch source) pins are electrically isolated internally and may be connected externally to form a common-source configuration for H-bridge or half-bridge topologies. However, doing so requires careful gate drive sequencing to prevent shoot-through, as the devices share no internal timing coordination.

Is the thermal pad on the SO-8 package electrically connected to any pin?

No, the exposed thermal pad on the bottom of the SO-8 package is not electrically connected to any internal die or pin-it serves only for thermal conduction to the PCB. Diodes Incorporated's recommended pad layout (AP02001) specifies solder mask defined thermal relief to prevent solder wicking and ensure mechanical reliability during reflow.

Does the device include integrated ESD protection on gate terminals?

Yes, the DMC3018LSD-13 incorporates on-die ESD protection rated to ±2kV HBM (Human Body Model) per JESD22-A114, verified during AEC-Q101 qualification. This protects gate oxides during handling and board assembly but does not replace system-level TVS protection for transient events exceeding 2kV.

DMC3018LSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
9.1A, 6A
Rds On (Max) @ Id, Vgs:
20mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
631pF @ 15V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC3018LSD-13 FAQ

1.How can I place an order for DMC3018LSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC3018LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC3018LSD-13 reliable?

The price and inventory of DMC3018LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3018LSD-13 is usually 5 days.

3.What payment methods are accepted for DMC3018LSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3018LSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC3018LSD-13?

DMC3018LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC3018LSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC3018LSD-13?

For technical support, including DMC3018LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3018LSD-13 requirements.

6.How does Aetrix verify that DMC3018LSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC3018LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3018LSD-13 meets industry standards.

7.What is the process for return or replacement of DMC3018LSD-13?

All DMC3018LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3018LSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC3018LSD-13 part is unused and in its original packaging.

Return procedure for DMC3018LSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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