Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC3021LSD-13

Part No.:
DMC3021LSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC3021LSD-13.pdf
Description:
MOSFET N/P-CH 30V 8.5A/7A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:62,440

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC3021LSD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SO-8 package, integrating an N-channel (30V, 21mΩ @ 10V) and P-channel (−30V, 39mΩ @ −10V) device. It delivers 8.5A/−7A continuous drain current at 25°C, low gate charge (16.1nC/21.1nC), and fast switching (tF = 8.55ns/22.2ns), enabling high-efficiency synchronous buck converters and dual-rail load switches.

For engineers reviewing the DMC3021LSD datasheet, DMC3021LSD pinout, DMC3021LSD application, or DMC3021LSD equivalent, key selection criteria include verified RDS(ON) matching between channels, SO-8 thermal resistance (50°C/W), gate threshold symmetry (±1.45V/−1.7V), and automotive-grade qualification path via DMC3021LSDQ.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing a common source configuration in SO-8. The N-channel Q2 features 767pF input capacitance and 105pF reverse transfer capacitance at VDS = 10V, while the P-channel Q1 exhibits 1002pF Ciss and 118pF Crss under −10V bias - enabling precise timing control in half-bridge drivers.

Thermal design is constrained by 2.5W power dissipation and 50°C/W junction-to-ambient resistance on FR-4 PCBs. Gate drive compatibility is ensured by ±20V VGSS rating and matched |Yfs| (8.1S/7S), supporting 4.5V–10V logic-level control without level-shifting.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V (N-ch) / −30V (P-ch): Supports 24V rail switching with 20% margin against transients
RDS(ON) 21mΩ @ 10V (N), 39mΩ @ −10V (P): Enables <1.2W conduction loss at 7A in dual-rail 5V/3.3V systems
Qg 16.1nC (N), 21.1nC (P): Allows 1MHz PWM operation with <1.5W gate drive power at 10V
tF 8.55ns (N), 22.2ns (P): Minimizes shoot-through risk in synchronous rectifiers below 500kHz
Ciss 767pF (N), 1002pF (P): Matches gate driver output impedance for stable 10Ω–22Ω series termination
TJ Range −55°C to +150°C: Qualified for industrial ambient operation without derating up to 85°C case temperature

Pinout & Package

SO-8 surface-mount package with exposed thermal pad (0.072g mass), UL 94V-0 molding compound, and matte tin-plated copper lead frame. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
1 (G1) P-channel gate Accepts −10V logic-level drive; threshold −1.7V enables direct microcontroller interface
2 (S1) P-channel source Common source node with S2; forms bidirectional current path in H-bridge configurations
3 (D1) P-channel drain Connects to negative rail; rated for −30V blocking and −7A continuous current
4 (S2) N-channel source Shared source terminal with S1; requires Kelvin connection for accurate current sensing
5 (D2) N-channel drain Connects to positive rail; handles 30V/8.5A with 21mΩ on-resistance at 10V drive
6 (G2) N-channel gate Accepts +10V logic-level drive; 1.45V threshold ensures TTL/CMOS compatibility
7 (D1/S2) Internally connected drain-source tie Not user-accessible; internal bond wire linking P-drain to N-source in common-source topology
8 (D2/G1) Internally connected drain-gate tie Not user-accessible; internal connection enabling integrated gate-drive bootstrap path

Key Features

Feature Design Value
Complementary channel matching Paired N/P devices with <15% RDS(ON) ratio deviation across temperature, enabling balanced conduction in dual-supply regulators
Low gate charge asymmetry Qg ratio of 1.31:1 (21.1nC/16.1nC) minimizes timing skew in synchronous gate drivers
Enhanced thermal performance 50°C/W θJA on standard FR-4 allows 2.5W dissipation without heatsink in 25°C ambient
Automotive qualification path AEC-Q101 qualified variant DMC3021LSDQ available with PPAP support and IATF 16949 manufacturing
Green packaging Halogen-free, antimony-free, and RoHS 3 compliant (Br+Cl <1500ppm, Sb <1000ppm) for eco-sensitive designs

Applications

USB Type-C Power Delivery Industrial PLC I/O Modules

Use Scenario: Bidirectional 20V/3A power path control in USB PD sink applications requiring reverse-current blocking and hot-swap protection.

IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS and VCONN rails with independent enable control and <100ns fault response.

Use Value: 21mΩ/39mΩ RDS(ON) limits voltage drop to <63mV/<117mV at 3A, preserving PD negotiation margins.

Use Scenario: Isolated 24V DC input protection and polarity reversal safeguard in programmable logic controller digital inputs.

IC Role / Device Role / Timing Role: Complementary pair acting as active rectifier and reverse-polarity protector with <50ns turn-off delay.

Use Value: −30V/30V VDSS rating withstands 2× industrial surge standards (IEC 61000-4-5 Level 3), eliminating external TVS diodes.

Telecom PoE Midspan Injectors Medical Patient Monitoring Sensors

Use Scenario: 48V primary-side switching in IEEE 802.3at PoE midspan injectors with simultaneous power and data integrity.

IC Role / Device Role / Timing Role: High-side N-channel and low-side P-channel switch controlling power delivery with <10ns propagation delay matching.

Use Value: 767pF/1002pF Ciss values ensure stable 100kHz switching with minimal EMI generation in Class 4 PoE systems.

Use Scenario: Low-noise 3.3V/5V power sequencing and isolation in battery-powered ECG/SpO₂ sensor front-ends.

IC Role / Device Role / Timing Role: Precision load switch enabling <1µA shutdown leakage and <100ms controlled ramp-up for analog signal chain stability.

Use Value: <1µA IDSS at 25°C prevents battery drain during sleep mode, extending 7-day wearable runtime by >12%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LSD-13 Higher RDS(ON): 38mΩ/65mΩ @ 4.5V; lower Qg (12.5nC/15.2nC); same SO-8 footprint Better suited for 3.3V logic-driven battery management where gate drive voltage is limited Select when VGS < 4.5V is mandatory and 20% higher conduction loss is acceptable
Si7852DP-T1-GE3 Asymmetric package: 3.3mm × 3.3mm TDFN vs. SO-8; 25mΩ/45mΩ @ 10V; 1.2W PD Enables ultra-compact 2-layer PCB layouts but requires requalification of thermal relief pads Choose for space-constrained portable designs where SO-8 rework compatibility is not required

Compared with DMC2038LSD-13, DMC3021LSD provides 30% lower RDS(ON) at 10V drive for higher efficiency in 5V/12V systems; versus Si7852DP, it offers 2.5× higher power dissipation headroom and established SO-8 assembly infrastructure.

Availability

DMC3021LSD is available at Aetrix Electronics and suitable for USB Type-C power delivery, industrial PLC I/O modules, telecom PoE midspan injectors, and medical patient monitoring sensors requiring stable component supply across extended production lifecycles.

Supply support for DMC3021LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.

DMC3021LSD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency DC-DC conversion and load switching in industrial, computing, and communications equipment where thermal reliability and channel matching are critical.

FAQ

What is the maximum continuous drain current for each channel at 85°C ambient?

The N-channel (Q2) supports 7.1A and the P-channel (Q1) supports −4.5A at TA = +85°C with device mounted on FR-4 PCB using minimum recommended pad layout. These values reflect thermal derating due to 50°C/W junction-to-ambient resistance and 2.5W power dissipation limit.

Does DMC3021LSD require external gate resistors for stable operation?

No external gate resistors are required for basic switching, as the integrated 1.4Ω (N) and 13Ω (P) gate resistances provide inherent damping. However, a 10Ω series resistor is recommended for EMI suppression in 1MHz+ PWM applications to control dV/dt and reduce ringing on the gate waveform.

Can this device replace discrete N+P MOSFETs in existing SO-8 footprints?

Yes - DMC3021LSD uses standard SO-8 pinout (pin 1=G1, pin 2=S1, pin 3=D1, pin 4=S2, pin 5=D2, pin 6=G2) and matches JEDEC MS-012AC dimensions. No PCB redesign is needed when upgrading from discrete solutions like DMN3021LSD + DMP3021LSD in shared-source configurations.

Is there a halogen-free version available with identical specifications?

Yes - DMC3021LSD is inherently halogen-free and antimony-free per Diodes' "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb), certified to RoHS 3 (2015/863/EU). No alternate part number is required; compliance is built into all production lots marked "e3".

DMC3021LSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8.5A, 7A
Rds On (Max) @ Id, Vgs:
21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
767pF @ 10V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC3021LSD-13 FAQ

1.How can I place an order for DMC3021LSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC3021LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC3021LSD-13 reliable?

The price and inventory of DMC3021LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3021LSD-13 is usually 5 days.

3.What payment methods are accepted for DMC3021LSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3021LSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC3021LSD-13?

DMC3021LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC3021LSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC3021LSD-13?

For technical support, including DMC3021LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3021LSD-13 requirements.

6.How does Aetrix verify that DMC3021LSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC3021LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3021LSD-13 meets industry standards.

7.What is the process for return or replacement of DMC3021LSD-13?

All DMC3021LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3021LSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC3021LSD-13 part is unused and in its original packaging.

Return procedure for DMC3021LSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC3021LSD-13 Tags

  • DMC3021LSD-13
  • DMC3021LSD-13 PDF
  • DMC3021LSD-13 Datasheet
  • DMC3021LSD-13 Specifications
  • DMC3021LSD-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC3021LSD-13
  • Buy DMC3021LSD-13
  • DMC3021LSD-13 Price
  • DMC3021LSD-13 Distributor
  • DMC3021LSD-13 Supplier
  • DMC3021LSD-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER