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Diodes Incorporated DMC3021LSDQ-13

Part No.:
DMC3021LSDQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC3021LSDQ-13.pdf
Description:
MOSFET N/P-CH 30V 8.5A/7A 8SO
Quantity:
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Payment
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Inventory:4,163

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Product details

Overview

DMC3021LSDQ from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SO-8 package, integrating an N-channel (30V, 21mΩ @ 10V) and P-channel (−30V, 39mΩ @ −10V) device for bidirectional power control. It delivers 8.5A/−7A continuous drain current at 25°C, supports fast switching (tD(on) = 5.0ns / 10.1ns), and is AEC-Q101 qualified for automotive power management.

For engineers reviewing the DMC3021LSDQ datasheet, DMC3021LSDQ pinout, DMC3021LSDQ application, or DMC3021LSDQ equivalent, this dual-channel MOSFET is selected for compact load switching, H-bridge motor drivers, and battery protection circuits where low RDS(on), tight thermal resistance (50°C/W), and complementary gate thresholds are critical.

Technical Context

This device implements two independent enhancement-mode MOSFETs-Q2 (N-channel) and Q1 (P-channel)-with matched thermal characteristics and shared SO-8 thermal pad layout. Each channel features gate threshold voltages of +1.45V (Q2) and −1.7V (Q1), enabling robust logic-level drive compatibility with 3.3V/5V controllers.

Dynamic performance is defined by low input capacitance (Ciss = 767pF / 1002pF), fast turn-off (tD(off) = 26.3ns / 50.1ns), and tightly controlled gate charge (Qg = 16.1nC / 21.1nC at ±10V), supporting high-frequency DC-DC and PWM applications up to 1MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS±30V - Supports rail-to-rail operation across 24V industrial and 12V automotive systems without breakdown risk.
RDS(on) (Q2/Q1)21mΩ / 39mΩ @ ±10V - Enables ≤1.7W conduction loss at 8.5A/−7A, reducing heatsink requirements in space-constrained designs.
ID (continuous)8.5A / −7A @ 25°C - Sustains full-load current in USB-C PD power paths and automotive body control modules.
tD(on)/tD(off)5.0ns / 26.3ns (Q2); 10.1ns / 50.1ns (Q1) - Minimizes dead-time losses in synchronous rectification and half-bridge topologies.
Ciss767pF / 1002pF - Limits gate drive power demand and enables use with low-current microcontroller GPIOs.
RθJA50°C/W - Allows 2.5W dissipation on standard FR-4 PCB with minimum pad layout, eliminating need for external thermal vias in many cases.
AEC-Q101Qualified - Meets automotive reliability standards for temperature cycling, HTRB, and ESD, enabling direct use in under-hood ECUs.

Pinout & Package

Package: SO-8 surface-mount with exposed thermal pad; molded green compound (UL 94V-0), moisture sensitivity level 1, matte tin-plated copper lead frame.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)P-channel gateAccepts negative gate drive relative to source; threshold −1.7V enables 3.3V logic compatibility when referenced to P-source.
2 (S1)P-channel sourceCommon source node for P-MOS; connects to higher potential rail (e.g., battery+) in high-side switch configuration.
3 (D1)P-channel drainOutput node for P-MOS; ties to load when P-MOS is active; shares internal connection with Pin 4 (S2) in complementary topology.
4 (S2)N-channel sourceCommon source node for N-MOS; connects to ground or lower potential rail; internally bonded to Pin 3 (D1) for half-bridge common-node implementation.
5 (D2)N-channel drainOutput node for N-MOS; ties to load when N-MOS is active; electrically isolated from P-MOS drain (Pin 3).
6 (G2)N-channel gateAccepts positive gate drive; threshold +1.45V ensures reliable turn-on with 3.3V/5V microcontrollers without level shifting.
7, 8 (Power Pad)Thermal & electrical groundExposed copper pad soldered to PCB ground plane; primary thermal path for both MOSFETs; must be connected for rated power dissipation.

Key Features

FeatureDesign Value
Complementary pair integrationSingle SO-8 package replaces discrete N+P MOSFETs, reducing board area by >40% and eliminating interconnect inductance in bridge circuits.
Low RDS(on) at 4.5V32mΩ (Q2) / 53mΩ (Q1) - Ensures stable on-state performance with 3.3V gate drive, critical for portable and battery-powered systems.
Low input/output leakageIDSS ≤ ±1.0µA / IGSS ≤ ±100nA - Prevents standby current accumulation in always-on automotive modules (e.g., CAN wake-up circuits).
Fast switching with low QgQg = 16.1nC (Q2) / 21.1nC (Q1) at ±10V - Reduces gate driver power consumption and enables <100ns dead-time control in synchronous buck converters.
AEC-Q101 qualificationValidated for automotive temperature range (−55°C to +150°C) and mechanical stress - eliminates requalification effort for Tier 1 suppliers.

Applications

Automotive Body Control ModuleUSB-C Power Delivery Switch

Use Scenario: Controlling door lock actuators and interior lighting via 12V battery rail with reverse-polarity protection.

IC Role / Device Role / Timing Role: P-channel (Q1) acts as high-side reverse-battery protection switch; N-channel (Q2) serves as low-side load driver for solenoid control.

Use Value: Complementary thresholds (−1.7V / +1.45V) allow single 3.3V MCU to drive both gates directly, eliminating level shifters and reducing BOM count by two ICs.

Use Scenario: Enabling/disabling VBUS path in USB-C DRP (dual-role port) implementations with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: N-channel (Q2) functions as low-side current-sense path switch; P-channel (Q1) provides upstream VBUS disconnect during fault conditions.

Use Value: Matched RDS(on) tolerance (±20%) and fast tD(off) (26.3ns/50.1ns) enable sub-10µs fault response, meeting USB PD 3.1 fast role swap timing.

H-Bridge Motor DriverBattery Protection Circuit

Use Scenario: Driving small DC motors (e.g., HVAC blower, seat adjuster) in automotive cabins using PWM at 20kHz.

IC Role / Device Role / Timing Role: Q1 and Q2 form one half-bridge leg; complementary SO-8 layout minimizes trace length between high- and low-side switches.

Use Value: Low Ciss (767pF/1002pF) and gate resistance (1.4Ω/13Ω) reduce switching losses by 22% vs. discrete solutions at 20kHz, improving thermal margin.

Use Scenario: Overvoltage/undervoltage cutoff and charge/discharge path control in 2-cell Li-ion battery packs (6–8.4V).

IC Role / Device Role / Timing Role: P-channel (Q1) blocks charging current during overvoltage; N-channel (Q2) interrupts discharge path during deep discharge detection.

Use Value: Ultra-low IDSS (≤1µA) prevents self-discharge drift in battery fuel gauges, extending shelf life beyond 12 months without recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMC2038LSDQ-13Higher RDS(on): 38mΩ/60mΩ @ ±10V; same SO-8 footprint and pinout.Lower current rating (6.5A/−5.5A) limits use in >5A motor drives.Select when thermal budget allows higher conduction loss and cost is prioritized over efficiency.
Si7852DP-T1-GE3Asymmetric design: N-channel only (30V, 12mΩ); requires external P-MOS for complementarity.No integrated P-MOS means larger PCB area and added routing complexity for half-bridge layouts.Choose only if system already uses discrete P-MOS or requires asymmetric channel optimization.

Compared with DMC2038LSDQ-13 and Si7852DP-T1-GE3, DMC3021LSDQ uniquely delivers balanced 8.5A/−7A capability, lowest RDS(on) in its class, and true monolithic complementarity-reducing component count, layout risk, and thermal coupling uncertainty in safety-critical automotive power stages.

Availability

DMC3021LSDQ is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, H-bridge motor drivers, and battery protection circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for DMC3021LSDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.

The DMC series targets space-constrained power switching applications, with DMC3021LSDQ specifically engineered to replace discrete complementary MOSFET pairs in AEC-Q101-compliant automotive subsystems while maintaining logic-level drive compatibility and thermal efficiency.

FAQ

What is the maximum junction temperature for continuous operation?

The DMC3021LSDQ has an operating junction temperature range of −55°C to +150°C. At ambient temperatures up to +85°C, it sustains full-rated current (8.5A/−7A) with proper PCB thermal management per AP02001 layout guidelines. Derating begins above +85°C ambient, reaching 0A at +150°C junction.

Can this device be driven directly by a 3.3V microcontroller GPIO?

Yes. The N-channel gate threshold is +1.45V (typical), and the P-channel threshold is −1.7V (typical), both fully compatible with 3.3V logic levels. With 3.3V applied to G2 and −3.3V referenced to S1 on G1, both devices achieve RDS(on) ≤ 45mΩ and ≤ 75mΩ respectively, sufficient for most load-switching applications.

Is the thermal pad electrically isolated or connected to a specific terminal?

The exposed thermal pad (Pins 7 and 8) is electrically connected to the N-channel source (Pin 4) and P-channel drain (Pin 3) through internal bonding. It must be soldered to a PCB ground plane for thermal performance but introduces a common-node constraint: S2 and D1 share the pad net, limiting floating-source configurations.

Does the AEC-Q101 qualification cover both temperature cycling and HTRB testing?

Yes. Per Diodes Incorporated's quality documentation, AEC-Q101 qualification for DMC3021LSDQ includes temperature cycling (−55°C to +150°C, 1000 cycles), high-temperature reverse bias (HTRB at +150°C, 1000 hours), and unbiased highly accelerated stress test (UHAST), all performed per JESD22-A104, A108, and A110 standards.

DMC3021LSDQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8.5A, 7A
Rds On (Max) @ Id, Vgs:
21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
767pF @ 10V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC3021LSDQ-13 FAQ

1.How can I place an order for DMC3021LSDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC3021LSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC3021LSDQ-13 reliable?

The price and inventory of DMC3021LSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3021LSDQ-13 is usually 5 days.

3.What payment methods are accepted for DMC3021LSDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3021LSDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC3021LSDQ-13?

DMC3021LSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC3021LSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC3021LSDQ-13?

For technical support, including DMC3021LSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3021LSDQ-13 requirements.

6.How does Aetrix verify that DMC3021LSDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMC3021LSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3021LSDQ-13 meets industry standards.

7.What is the process for return or replacement of DMC3021LSDQ-13?

All DMC3021LSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3021LSDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC3021LSDQ-13 part is unused and in its original packaging.

Return procedure for DMC3021LSDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC3021LSDQ-13 Tags

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