Diodes Incorporated DMC3025LDV-13

Overview

DMC3025LDV-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single PowerDI3333-8 (UXC) package, integrating an N-channel (30V, 25mΩ @ 10V) and P-channel (-30V, 25mΩ @ -10V) device for bidirectional switching in compact DC-DC converters and H-bridge motor drivers. It delivers 15A/–15A continuous drain current at TC = +25°C with fast switching (tD(ON) ≤ 3.9ns, tD(OFF) ≤ 36ns) and low gate charge (Qg = 9.8nC / –19.7nC).

For engineers reviewing the DMC3025LDV-13 datasheet, DMC3025LDV-13 pinout, DMC3025LDV-13 application, or DMC3025LDV-13 equivalent, key selection criteria include complementary RDS(ON) matching at 4.5V/–4.5V, thermal resistance (RθJC = 15°C/W), body diode recovery (tRR = 5.6ns / 10.4ns), and PowerDI3333-8 footprint compatibility for space-constrained power stages.

Technical Context

This dual MOSFET implements a matched complementary topology where Q1 (N-channel) and Q2 (P-channel) share identical voltage rating (±30V), on-resistance spec (25mΩ max at ±10V), and thermal design (RθJC = 15°C/W). Its PowerDI3333-8 package integrates exposed drain pads for both channels to enable simultaneous thermal coupling to PCB copper.

The device supports logic-level drive with VGS(TH) of 1.0–2.0V (Q1) and –1.2––2.4V (Q2), enabling direct interface with 3.3V/5V controllers. Dynamic performance is optimized via low Crss (57pF / 116pF) and balanced Ciss/Coss ratios, reducing Miller-induced shoot-through risk in synchronous rectification.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced plastic with exposed drain pads for both channels. Dimensions: 3.30mm × 3.30mm × 0.80mm (L×W×H), moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC3025LDV-13, DMC2038LSD-13 sacrifices voltage headroom for size reduction, while SI6926ADQ-T1-GE3 trades thermal efficiency and RDS(ON) matching for legacy package compatibility-neither replicates the 30V symmetric low-RDS(ON) performance in the same footprint.

Availability

DMC3025LDV-13 is available at Aetrix Electronics and suitable for industrial motor drives, USB-C power delivery systems, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for DMC3025LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The DMC3025LDV belongs to Diodes' PowerMOS™ complementary pair portfolio, engineered specifically for high-density, high-efficiency power conversion where matched N/P characteristics and thermal co-location are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMC3025LDV-13 has an operating junction temperature range of –55°C to +150°C. For reliable long-term operation, junction temperature must remain below +150°C under worst-case ambient and power dissipation conditions. Thermal design must account for RθJC = 15°C/W and RθJA = 66°C/W (with 2oz copper thermal bias) to ensure safe margin.

Can this device be used with 3.3V gate drive?

Yes-the N-channel Q1 has VGS(TH) as low as 1.0V and delivers 12.5A ID at VGS = 4.5V; the P-channel Q2 has VGS(TH) as low as –1.2V and delivers –12A at VGS = –4.5V. At 3.3V, Q1 achieves ~8A and Q2 ~–7A, making it usable in logic-level designs with appropriate RDS(ON) derating and thermal management.

How are the two MOSFETs electrically isolated within the package?

The N-channel (Q1) and P-channel (Q2) devices share no internal electrical connection-their drains, sources, and gates are fully isolated. The package contains two independent die mounted on separate exposed copper pads (D1 and D2), allowing independent thermal and circuit routing. Pinout confirms no shared terminals beyond substrate reference.

Is the PowerDI3333-8 footprint compatible with standard reflow profiles?

Yes-the PowerDI3333-8 package is qualified for standard lead-free reflow profiles (J-STD-020 Level 1), with peak temperature up to 260°C. Its matte tin annealed finish ensures solderability per MIL-STD-202 Method 208, and the 0.072g mass supports uniform heating in convection ovens without tombstoning or voiding risks.