Diodes Incorporated DMC3028LSDXQ-13

Overview

DMC3028LSDXQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SO-8 package, integrating one N-channel (30V, 27mΩ @ 10V) and one P-channel (–30V, 25mΩ @ –10V) device for half-bridge or level-shifting power stages. It delivers 7.2A/–7.6A continuous drain current at 25°C, supports DC-DC converters and backlighting, and is AEC-Q101 qualified for automotive power management.

For engineers reviewing the DMC3028LSDXQ-13 datasheet, DMC3028LSDXQ-13 pinout, DMC3028LSDXQ-13 application, or DMC3028LSDXQ-13 equivalent, key selection criteria include dual-channel R_DS(on) matching at 4.5V/–4.5V, gate charge asymmetry (Q_g = 13.2nC / 22nC), thermal resistance (R_θJA = 85°C/W with copper pad), and SO-8 lead-free compliance per J-STD-020 Level 1.

Technical Context

This dual MOSFET implements complementary switching in synchronous buck regulators and H-bridge drivers. Its matched V_GS(th) (1–3V for Q1, –1 to –3V for Q2) enables balanced turn-on timing under shared gate drive, while asymmetric dynamic parameters-C_iss = 641pF (Q1) vs. 1241pF (Q2), t_D(off) = 22.3ns vs. 60.5ns-reflect inherent N/P channel carrier mobility differences.

The device uses a single SO-8 thermally enhanced layout with isolated source terminals (S1, S2) and shared drain connections (D1/D2 tied internally per channel). Thermal design relies on 1-inch² copper plate (R_θJA = 85°C/W) or FR-4 baseline (108°C/W), and its 14.5°C/W R_θJC supports heatsink attachment via exposed drain pads.

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, molded green plastic (UL 94V-0), 0.074g mass, moisture sensitivity Level 1. Exposed drain pads (D1, D2) provide primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSDXQ-13, DMC3028LSDXQ-13 trades slightly higher R_DS(on) for 50% higher voltage headroom and automotive qualification; versus SI6926ADQ-T1-GE3, it delivers tighter parametric matching, lower thermal resistance, and guaranteed automotive-grade reliability at comparable cost.

Availability

DMC3028LSDXQ-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and portable backlight systems requiring stable component supply across multi-year production cycles.

Supply support for DMC3028LSDXQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This part belongs to Diodes' Automotive-Grade PowerMOS family, engineered specifically for high-reliability 12V/24V power conversion in engine control units, body electronics, and ADAS subsystems.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C, Q1 delivers 4.1A and Q2 delivers –4.3A under steady-state conditions with the recommended FR-4 PCB layout (2oz copper, minimum pad). With 1-inch² copper enhancement, these ratings improve to 5.7A and –6.1A respectively, per the thermal characteristics table in DS37963 Rev. 1–2.

Can DMC3028LSDXQ-13 be used in a synchronous buck converter without external level shifting?

Yes-its N-channel threshold (1–3V) and P-channel threshold (–1 to –3V) allow direct drive from 3.3V or 5V controllers when Q1 is high-side and Q2 is low-side with source-referenced gate signals. However, for high-side N-MOSFET operation, a bootstrap or charge-pump gate driver remains necessary to achieve V_GS ≥10V for lowest R_DS(on).

How does the SO-8 thermal pad configuration affect PCB layout requirements?

Pins 7 and 8 are electrically connected to D1 and D2 drains and serve as primary thermal paths. The datasheet mandates soldering both pads to ≥1-inch² copper areas with thermal vias to inner layers. Omitting this reduces R_θJA from 85°C/W to 108°C/W, risking thermal shutdown at >1W dissipation in enclosed environments.

Is the body diode forward voltage specified separately for each channel?

Yes: V_SD is 0.7–1.2V for Q1 (N-channel body diode, anode = S1, cathode = D1) and –0.7 to –1.2V for Q2 (P-channel body diode, anode = D2, cathode = S2), measured at IS = ±1.3A and T_A = +25°C. These values impact reverse-recovery losses in discontinuous conduction mode.