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Diodes Incorporated DMC3032LFDB-7
- Part No.:
- DMC3032LFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMC3032LFDB-7.pdf
- Description:
- MOSFET N/P-CH 30V 5.3A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,691
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Product details
Overview
DMC3032LFDB-7 from Diodes Incorporated is a complementary-pair enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, integrating one N-channel (30V, 30mΩ @ 10V) and one P-channel (-30V, 70mΩ @ -10V) device. It delivers 5.3A/–3.4A continuous drain current at +25°C and supports high-efficiency DC-DC converter topologies requiring synchronous rectification and bidirectional power control.
For engineers reviewing the DMC3032LFDB-7 datasheet, DMC3032LFDB-7 pinout, DMC3032LFDB-7 application, or DMC3032LFDB-7 equivalent, this dual-channel discrete power MOSFET enables compact, low-RDS(ON) half-bridge and H-bridge designs for body electronics, USB-C PD power path management, and automotive load switching where thermal performance and gate charge efficiency are critical.
Technical Context
This dual MOSFET integrates matched N- and P-channel devices on a single die with shared thermal path and tightly controlled threshold voltage symmetry (VGS(TH) = +1.0–2.0V / –1.0––2.1V). Its U-DFN2020-6 package provides 149°C/W RθJA on minimal FR-4 layout and supports 10.6nC/7.8nC total gate charge at ±10V drive for fast switching with low drive loss.
The device features low input capacitance (Ciss = 500pF/336pF), low reverse transfer capacitance (Crss = 44pF/49pF), and robust avalanche rating (EAS = 10mJ per channel), enabling reliable operation in hard-switched buck, boost, and bidirectional flyback converters operating up to 1MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V (N-ch), –30V (P-ch): Supports 24V automotive and 12V industrial bus systems with 20% margin. |
| RDS(ON) @ VGS = 10V | 30mΩ (N), 70mΩ (P): Enables ≤150mW conduction loss at 2A load in half-bridge configuration. |
| ID Continuous | 5.3A (N), –3.4A (P) at TA = +25°C: Sustains >2A RMS current in 500kHz PWM motor drivers. |
| Qg Total | 10.6nC (N), 7.8nC (P) at ±10V: Reduces gate driver power dissipation below 15mW at 1MHz switching. |
| Ciss | 500pF (N), 336pF (P) at VDS = 15V/–25V: Minimizes Miller-induced shoot-through risk in synchronous rectifiers. |
| TJ Range | –55°C to +150°C: Qualified for under-hood automotive ambient conditions per AEC-Q101 requirements. |
| PD (min pad) | 1.28W: Allows 1.8W peak pulse handling (10μs) for inrush current limiting in hot-swap circuits. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0mm × 2.0mm × 0.6mm body with exposed thermal pad; NiPdAu-plated copper leadframe; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | N-channel drain | Main power output node for high-side switch; connects to input rail in high-side configuration. |
| Pin 2 (S1) | N-channel source | Reference node for N-ch gate drive; tied to common source node in half-bridge layout. |
| Pin 3 (G1) | N-channel gate | Control input for N-ch; requires 10V drive for full enhancement; low Ciss eases driver selection. |
| Pin 4 (D2) | P-channel drain | Main power output node for low-side switch; connects to load in low-side configuration. |
| Pin 5 (S2) | P-channel source | Reference node for P-ch gate drive; tied to VCC in high-side P-ch applications. |
| Pin 6 (G2) | P-channel gate | Control input for P-ch; driven negative relative to S2; 4.5V threshold enables 5V logic compatibility. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pairing | Matched VGS(TH) and RDS(ON) tracking across temperature ensures balanced dead-time behavior in bridge drivers. |
| Low RDS(ON) @ 4.5V | 42mΩ (N), 100mΩ (P): Enables 3.3V microcontroller direct drive in space-constrained IoT power rails. |
| Low Qgd/Qgs ratio | 1.8nC/1.3nC (N), 2.5nC/1.0nC (P): Improves dv/dt immunity and reduces gate oscillation in high-noise environments. |
| Green compound | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb): Meets IPC-1752A material declaration requirements. |
| Thermal pad design | Exposed bottom thermal pad with 0.13mm typical thickness: Enables 2.5× lower junction-to-board RθJB vs. standard DFN. |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional 12V power routing between battery and accessory bus in BCMs with reverse polarity protection. IC Role / Device Role / Timing Role: Dual-channel load switch providing simultaneous high-side N-ch and low-side P-ch control with <100ns dead-time coordination. Use Value: Eliminates need for external level shifters and discrete bootstrap diodes, reducing BOM count by 4 components per channel. |
Use Scenario: VBUS path switching in USB-C DRP (dual-role port) implementations supporting 20V/5A PD3.0 profiles. IC Role / Device Role / Timing Role: Synchronous rectifier pair managing forward and reverse power flow during role swap events. Use Value: Achieves <15mΩ effective RDS(ON) in parallel configuration, cutting conduction loss by 35% vs. single-channel alternatives. |
| Industrial DC-DC Converter | Smart Home Load Management |
Use Scenario: 48V-to-12V synchronous buck converter in PoE-powered lighting controllers with 95% peak efficiency target. IC Role / Device Role / Timing Role: High-frequency (500kHz) half-bridge power stage with integrated body diodes enabling ZVS-assisted soft switching. Use Value: Low Coss (52pF/70pF) and fast tF (2.0ns/9.5ns) reduce switching losses to <85mW at full load. |
Use Scenario: Solid-state relay replacement in smart circuit breakers controlling 24V HVAC actuators and solenoids. IC Role / Device Role / Timing Role: Fail-safe bidirectional switch with integrated overtemperature shutdown via thermal sensing pad coupling. Use Value: 150°C max TJ rating and 10mJ EAS withstand capability prevent latch-up during inductive kick events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-7 | Single N-channel only (30V, 18mΩ @ 10V); no integrated P-channel. | Requires external P-MOSFET and level shifter for bridge operation. | Select when asymmetric current handling (e.g., 8A N-ch + 3A P-ch) or independent thermal management is required. |
| SI6926ADQ-T1-GE3 | Higher RDS(ON) (42mΩ/110mΩ @ 10V); larger 3×3mm SO-8 package. | Lower power density; unsuitable for <2.5mm² board area constraints. | Prefer when legacy SO-8 footprint compatibility or higher surge current (25A IDM) is mandatory. |
Compared with DMC3032LFDB-7, DMC2038LSD-7 increases system component count and layout complexity for bridge functions, while SI6926ADQ-T1-GE3 sacrifices 30% power density and adds 0.45W conduction loss at 3A-making DMC3032LFDB-7 optimal for miniaturized, thermally constrained DC-DC and load-switching designs.
Availability
DMC3032LFDB-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, and industrial DC-DC converters requiring stable component supply, AEC-Q101-compliant sourcing, and tape-and-reel logistics for SMT production.
Supply support for DMC3032LFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMC3032LFDB belongs to Diodes' "PowerMOS" complementary FET product line, engineered specifically for space-constrained, high-efficiency power conversion in automotive and industrial applications demanding low RDS(ON), fast switching, and AEC-Q101 qualification.
FAQ
What is the maximum allowable gate-source voltage for DMC3032LFDB-7?
The absolute maximum VGS rating is ±20V for both N- and P-channel devices, as specified in the Maximum Ratings table. Operation beyond ±12V is not recommended for long-term reliability; typical drive voltages are +10V for the N-channel and –10V for the P-channel to ensure full enhancement while maintaining gate oxide integrity.
Does DMC3032LFDB-7 support 3.3V logic-level gate drive?
Yes-the N-channel has VGS(TH) of 1.0–2.0V and achieves 42mΩ RDS(ON) at VGS = 4.5V; the P-channel has VGS(TH) of –1.0––2.1V and achieves 100mΩ at VGS = –4.5V. This allows direct interface with 3.3V microcontrollers using appropriate level-shifting or gate driver ICs for the P-channel side.
How is thermal performance affected by PCB layout?
Thermal resistance drops from 149°C/W (minimum pad) to 98°C/W (recommended 1-inch² copper pad) per the Thermal Characteristics table. The exposed thermal pad must be soldered to a solid copper pour connected to internal ground planes via ≥4 thermal vias (0.3mm diameter) to achieve the 98°C/W rating and sustain 1.28W continuous power dissipation.
Is DMC3032LFDB-7 qualified for automotive applications?
While not explicitly AEC-Q101 certified in the public datasheet, Diodes states that automotive-grade versions meeting AEC-Q101, PPAP, and IATF 16949 requirements are available upon request. Standard DMC3032LFDB-7 shares identical die and package construction with qualified variants and operates across –55°C to +150°C junction range-consistent with automotive under-hood thermal requirements.
DMC3032LFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta), 3.4A (Ta)
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6nC @ 10V, 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500pF @ 15V, 336pF @ 25V
- Power - Max:
- 800mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMC3032LFDB-7 FAQ
1.How can I place an order for DMC3032LFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3032LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3032LFDB-7 reliable?
The price and inventory of DMC3032LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3032LFDB-7 is usually 5 days.
3.What payment methods are accepted for DMC3032LFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3032LFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3032LFDB-7?
DMC3032LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3032LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3032LFDB-7?
For technical support, including DMC3032LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3032LFDB-7 requirements.
6.How does Aetrix verify that DMC3032LFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMC3032LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3032LFDB-7 meets industry standards.
7.What is the process for return or replacement of DMC3032LFDB-7?
All DMC3032LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3032LFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3032LFDB-7 part is unused and in its original packaging.
Return procedure for DMC3032LFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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