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Diodes Incorporated DMC3060LVT-13
- Part No.:
- DMC3060LVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC3060LVT-13.pdf
- Description:
- MOSFET N/P-CH 30V 3.6A TSOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,805
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Product details
Overview
DMC3060LVT-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 60mΩ @ 10V) and P-channel (-30V, 95mΩ @ -10V) device for half-bridge or level-shifting power stages. It delivers 3.6A/–2.8A continuous drain current at +25°C and supports fast switching in DC-DC converters with low gate charge (11.3nC/8.6nC) and input capacitance (395pF/324pF).
For engineers reviewing the DMC3060LVT-13 datasheet, DMC3060LVT-13 pinout, DMC3060LVT-13 application, or DMC3060LVT-13 equivalent, key selection criteria include complementary RDS(ON) matching at 4.5V/–4.5V, thermal resistance (108°C/W on 1-in² copper), and TSOT26 footprint compatibility with space-constrained power management designs.
Technical Context
This dual MOSFET implements a matched complementary topology where Q1 (N-channel) and Q2 (P-channel) share identical gate drive timing constraints and operate under symmetric voltage ratings (±30V VDSS) and gate thresholds (1.0V / –1.1V typ). Its design targets synchronous rectification and bidirectional switching in compact DC-DC topologies.
The device uses a thermally optimized TSOT26 leadframe with matte tin plating and achieves RθJA = 108°C/W under high-copper PCB conditions. Dynamic parameters-including 5.8ns/7.7ns turn-on delay, 30.8ns/17.8ns rise time, and Crss of 26pF/33pF-enable efficient operation up to 1MHz switching frequencies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | ±30V - Supports rail-to-rail operation in 24V systems with 20% headroom for transients. |
| RDS(ON) Q1/Q2 @ VGS = ±10V | 45mΩ / 81mΩ - Enables <1.5W conduction loss at 3A in high-side/low-side configurations. |
| Qg Q1/Q2 @ VGS = ±10V | 11.3nC / 8.6nC - Reduces gate drive power and enables use with low-current controllers. |
| Ciss Q1/Q2 | 395pF / 324pF - Limits Miller-induced shoot-through risk during hard switching. |
| ID Continuous @ +25°C | 3.6A / –2.8A - Sustains full-load current in 5V–12V buck converters without derating. |
| RθJA (1-in² copper) | 108°C/W - Allows 1.16W power dissipation at ambient +70°C with ≤85°C junction rise. |
| VGS(TH) Q1/Q2 | 1.0V / –1.1V typ - Ensures reliable turn-on with 3.3V logic-level gate drivers. |
Pinout & Package
Package: TSOT26 - 6-pin surface-mount package with exposed thermal pad, 2.9mm × 2.9mm footprint, 1.0mm max height, and UL 94V-0 molded compound. Optimized for automated placement and reflow soldering on FR-4 PCBs with 2oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main current path for high-side switch; connects to input rail in buck topology. |
| 2 (S1) | N-channel source | Reference node for N-channel gate drive; ties to switching node in half-bridge. |
| 3 (G1) | N-channel gate | Control input requiring 10V for minimal RDS(ON); compatible with standard logic drivers. |
| 4 (D2) | P-channel drain | Connects to output rail or load; serves as low-side switch return path. |
| 5 (S2) | P-channel source | Common source tied to ground or bulk capacitor; defines reference for P-channel control. |
| 6 (G2) | P-channel gate | Inverted control input; requires negative bias relative to S2 for turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary RDS(ON) matching | 60mΩ (N) / 95mΩ (P) @ 4.5V ensures balanced conduction loss in synchronous rectifiers. |
| Low Ciss/Crss ratio | 395pF/26pF (Q1) and 324pF/33pF (Q2) suppress gate oscillation and reduce EMI in high-dV/dt environments. |
| Thermally enhanced leadframe | 108°C/W RθJA on 1-in² copper enables 1.16W operation without heatsink in industrial ambient. |
| Halogen- and antimony-free "Green" construction | <900ppm Br, <900ppm Cl, <1000ppm Sb meets RoHS 3 and automotive material compliance standards. |
| Fast switching with low Qgd | 1.8nC (Q1) / 1.5nC (Q2) gate-drain charge minimizes Miller plateau duration and improves efficiency. |
Applications
| LED Backlight Driver | USB-C Power Delivery |
|---|---|
|
Use Scenario: Driving white LED strings in portable displays using boost+linear hybrid topology. IC Role / Device Role / Timing Role: N-channel switches boost inductor; P-channel controls linear current sink for dimming precision. Use Value: Low RDS(ON) at 4.5V enables >92% efficiency at 2A load; matched thresholds ensure synchronized PWM dimming. |
Use Scenario: Bidirectional power path control in USB-C PD 3.0 sink/source negotiation circuits. IC Role / Device Role / Timing Role: Complementary pair forms ideal OR-ing FET for VBUS path selection with reverse-current blocking. Use Value: 30V rating covers 20V PD PPS range; 140mΩ P-channel RDS(ON) at –4.5V ensures <30mV dropout at 200mA fault current. |
| Industrial DC-DC Converter | Smartphone Power Management |
|
Use Scenario: 12V-to-3.3V synchronous buck converter in PLC I/O modules with tight thermal constraints. IC Role / Device Role / Timing Role: Q1 (high-side) and Q2 (low-side) form integrated half-bridge switching stage controlled by external PWM controller. Use Value: 108°C/W thermal resistance allows full 3.6A output without airflow; 5.8ns tD(ON) supports 500kHz+ switching. |
Use Scenario: Load switch for always-on rail (VDDIO) with dynamic voltage scaling in mobile SoC power domains. IC Role / Device Role / Timing Role: N-channel handles main supply path; P-channel provides active-low enable for rapid shutdown. Use Value: 0.013g mass and TSOT26 footprint fit within 2.0mm × 2.0mm board area; 100nA IGSS prevents battery drain in sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower voltage rating (±20V), higher RDS(ON) (100mΩ/150mΩ @ 4.5V), smaller 0.65mm pitch. | Better suited for 5V/3.3V logic rails; insufficient for 24V input DC-DC stages. | Select when board space is critical and input voltage ≤12V; verify SOA limits at peak current. |
| SI6926ADQ-T1-GE3 | Higher Qg (15nC/12nC), larger SO-8 package, 150°C TJ rating. | Supports higher ambient temperatures but requires 3× PCB area and lacks TSOT26 reflow compatibility. | Choose for extended temperature operation (>85°C ambient) where thermal margin outweighs size penalty. |
Compared with DMC2038LVT-7 and SI6926ADQ-T1-GE3, the DMC3060LVT-13 uniquely balances 30V capability, TSOT26 miniaturization, and 4.5V logic-level drive-making it optimal for space-constrained 12–24V industrial and consumer power stages where thermal density and layout simplicity are prioritized.
Availability
DMC3060LVT-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and industrial DC-DC converters requiring stable component supply across production lifecycles.
Supply support for DMC3060LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions, signal integrity products, and protection devices for industrial, computing, and consumer markets.
The DMC3060LVT belongs to Diodes' Logic-Level Complementary MOSFET product line, engineered specifically for space-efficient, high-frequency synchronous rectification and bidirectional power control in compact power management subsystems.
FAQ
What is the maximum safe operating junction temperature for DMC3060LVT-13?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above this threshold risks permanent parametric shift or bondwire failure. Derating is required above +125°C ambient when dissipating >0.5W; thermal simulation using the 108°C/W RθJA value (1-in² copper) is recommended for precise margin analysis.
Can DMC3060LVT-13 be used in a bootstrap-gated high-side configuration?
No-this device lacks internal level-shifting circuitry and its P-channel section is not rated for floating high-side operation. It is designed for low-side P-channel or complementary half-bridge layouts where both gates reference local ground or source nodes. Bootstrap operation requires dedicated high-side drivers or integrated gate-driver ICs.
Does the TSOT26 package include an exposed thermal pad?
Yes-the TSOT26 package features an exposed copper thermal pad centered on the bottom surface (pin 0), which must be soldered to a PCB thermal land for optimal heat transfer. The datasheet specifies minimum pad dimensions and recommends connecting it directly to a solid internal ground or power plane for RθJA = 108°C/W performance.
How does gate threshold variation affect drive voltage selection?
VGS(TH) ranges from 0.7–1.8V (Q1) and –0.7 to –2.1V (Q2); therefore, 3.3V logic drives both channels reliably, while 2.5V may cause marginal turn-on in worst-case units. For guaranteed RDS(ON) < 100mΩ, VGS ≥ 4.5V is required for Q1 and ≤ –4.5V for Q2-verified via Figure 4 and Figure 16 in the datasheet.
DMC3060LVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 395pF @ 15V, 324pF @ 15V
- Power - Max:
- 830mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMC3060LVT-13 FAQ
1.How can I place an order for DMC3060LVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3060LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3060LVT-13 reliable?
The price and inventory of DMC3060LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3060LVT-13 is usually 5 days.
3.What payment methods are accepted for DMC3060LVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3060LVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3060LVT-13?
DMC3060LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3060LVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3060LVT-13?
For technical support, including DMC3060LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3060LVT-13 requirements.
6.How does Aetrix verify that DMC3060LVT-13 is sourced from the original manufacturer or authorized distributors?
All DMC3060LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3060LVT-13 meets industry standards.
7.What is the process for return or replacement of DMC3060LVT-13?
All DMC3060LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3060LVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3060LVT-13 part is unused and in its original packaging.
Return procedure for DMC3060LVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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