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Diodes Incorporated DMC3060LVT-7
- Part No.:
- DMC3060LVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC3060LVT-7.pdf
- Description:
- MOSFET N/P-CH 30V 3.6A TSOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:14,086
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Product details
Overview
DMC3060LVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 60mΩ @ 10V) and P-channel (-30V, 95mΩ @ -10V) device for half-bridge or level-shifting power stages. It delivers 3.6A/–2.8A continuous drain current at +25°C with low gate charge (11.3nC/8.6nC) and fast switching (tR = 30.8ns / tF = 29.5ns), enabling high-efficiency DC-DC converters and backlighting drivers.
For engineers reviewing the DMC3060LVT datasheet, DMC3060LVT pinout, DMC3060LVT application, or DMC3060LVT equivalent, key selection criteria include complementary RDS(ON) matching, gate drive compatibility at 3.3V/4.5V logic levels, thermal performance on FR-4 (RθJA = 108°C/W with copper pad), and TSOT26 footprint constraints for space-constrained power management designs.
Technical Context
This dual MOSFET implements a matched complementary topology optimized for synchronous buck converters and H-bridge motor drivers. Its N-channel Q1 features VGS(TH) = 0.7–1.8V and P-channel Q2 has VGS(TH) = –0.7 to –2.1V, enabling robust turn-on with standard logic-level gate drivers. The integrated body diodes support bidirectional current flow with VSD = 0.8–1.0V (Q1) and –0.8 to –1.0V (Q2).
Thermal design relies on its 1.16W power dissipation rating on a 1-inch² copper pad (RθJA = 108°C/W), while dynamic performance is defined by Ciss = 395pF/324pF and Crss = 26pF/33pF-critical for minimizing Miller-induced shoot-through in high-frequency switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V (N-ch), –30V (P-ch): Supports 24V input rails with 20% margin against transients |
| RDS(ON) | 60mΩ @ 10V (Q1), 95mΩ @ –10V (Q2): Enables <1.5W conduction loss at 3A load |
| ID Continuous | 3.6A (Q1), –2.8A (Q2) at +25°C: Sustains typical LED backlight or PMIC output currents |
| Qg | 11.3nC (Q1), 8.6nC (Q2) at rated VGS: Reduces gate driver power and enables >1MHz switching |
| Ciss | 395pF (Q1), 324pF (Q2): Limits high-frequency gate current demand and EMI generation |
| tR/tF | 30.8ns/2.7ns (Q1), 17.8ns/29.5ns (Q2): Balances rise/fall asymmetry for reduced cross-conduction risk |
| RθJA | 108°C/W (with 1″² copper): Allows 85°C junction rise at 1.16W dissipation in compact layouts |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 2.8mm × 0.8mm) with exposed drain pads for thermal relief and lead-free matte tin terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main current path for high-side N-MOSFET; connected to input rail in buck topologies |
| 2 (S1) | N-channel source | Reference node for N-ch gate drive; ties to switch node in half-bridge configurations |
| 3 (G1) | N-channel gate | Logic-level control input requiring ≤10V drive; low Ciss eases driver selection |
| 4 (D2) | P-channel drain | Main current path for low-side P-MOSFET; connects to output/load in buck bottom switch |
| 5 (S2) | P-channel source | Connected to ground or bulk capacitor; defines return path for P-ch conduction |
| 6 (G2) | P-channel gate | Inverted logic control; negative VGS required for turn-on; compatible with dedicated P-ch drivers |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Matched VGS(TH) and RDS(ON) tracking across temperature ensures balanced dead-time behavior in synchronous rectifiers |
| Low gate charge asymmetry | Qg ratio of 1.31:1 (11.3nC/8.6nC) minimizes mismatched switching delays between N- and P-ch devices |
| Enhanced thermal pad layout | Exposed drain terminals (D1/D2) enable direct PCB copper connection for 30% lower junction-to-board thermal resistance |
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5V (Q1) and VGS = –4.5V (Q2) supports direct MCU GPIO interfacing without level shifters |
| Halogen- and antimony-free | <900ppm Br+Cl, <1000ppm Sb: Meets IPC-1752A Class 3 material declarations for green electronics compliance |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving white LED strings in LCD panels with PWM dimming up to 20kHz. IC Role / Device Role / Timing Role: N-channel acts as high-side switch; P-channel serves as synchronous rectifier replacing Schottky diode. Use Value: Reduces forward voltage drop from 0.4V (Schottky) to 0.18V (60mΩ × 3A), improving efficiency by 3.5% at 500mA output. |
Use Scenario: Point-of-load regulation for FPGA core voltage (1.0V/3A) from 5V or 12V input. IC Role / Device Role / Timing Role: Integrated complementary pair forms compact half-bridge power stage controlled by external PWM controller. Use Value: Eliminates discrete layout mismatch; 108°C/W RθJA sustains 85°C junction at full load on 2-layer board. |
| USB-C Power Delivery Sink | Industrial Sensor Bias Supply |
|
Use Scenario: Providing programmable 5–20V output with reverse polarity protection and load switching. IC Role / Device Role / Timing Role: P-channel handles input-side reverse-voltage blocking; N-channel manages output-side current limiting. Use Value: Leverages –30V BVDSS and –2.8A ID rating to withstand 20V PD transients while maintaining <100mΩ system resistance. |
Use Scenario: Generating stable ±12V bias rails for precision analog front-ends in factory automation modules. IC Role / Device Role / Timing Role: Complementary pair implements isolated dual-rail DC-DC stage with shared gate timing control. Use Value: Matched RDS(ON) drift (<15% over –40°C to +125°C) ensures symmetrical rail regulation under thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower voltage rating (20V), higher RDS(ON) (100mΩ/150mΩ), smaller Ciss (290pF/240pF) | Better suited for 5V–12V logic-supply domains; insufficient for 24V industrial inputs | Select when operating below 15V input and prioritizing gate drive simplicity over conduction loss |
| SI6926ADQ-T1-GE3 | Same 30V rating but asymmetric packaging (SO-8); higher Qg (18nC/14nC); no integrated thermal pad | Requires larger PCB area and external thermal vias; less suitable for ultra-thin portable designs | Choose for legacy SO-8 footprints or where higher surge current (IDM = 25A) outweighs size constraints |
Compared with DMC3060LVT, DMC2038LVT-7 trades voltage headroom for lower gate drive demand in low-voltage systems, while SI6926ADQ-T1-GE3 sacrifices miniaturization for higher pulsed current capability and established SO-8 assembly infrastructure.
Availability
DMC3060LVT is available at Aetrix Electronics and suitable for LED backlighting, synchronous buck conversion, and USB-C power delivery applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle assurance.
Supply support for DMC3060LVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMC3060LVT belongs to Diodes' logic-level complementary MOSFET product line, engineered specifically for space-constrained, high-efficiency DC-DC power stages where matched N/P-channel characteristics and thermal performance are critical.
FAQ
What is the maximum safe operating junction temperature for DMC3060LVT?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above this threshold risks permanent degradation of the silicon die and bond wires. Derating is required above +125°C ambient; thermal design must ensure RθJA × PD + TA ≤ 150°C, using the 108°C/W value measured on a 1-inch² copper pad.
Can DMC3060LVT be driven directly by a 3.3V microcontroller GPIO?
Yes-both channels are specified for guaranteed turn-on at VGS = 4.5V (Q1) and VGS = –4.5V (Q2), and typical VGS(TH) is 1.0V (Q1) and –1.1V (Q2). A 3.3V GPIO can fully enhance Q1 but may only partially turn on Q2; for reliable P-channel operation, a dedicated gate driver or level shifter is recommended.
How does the TSOT26 package affect thermal performance compared to SO-8?
TSOT26 reduces footprint by 75% versus SO-8 but increases thermal resistance: RθJA is 108°C/W (with copper pad) versus ~60°C/W for SO-8. This requires careful PCB layout-using ≥2 thermal vias per drain pad and ≥1-inch² copper pour-to avoid exceeding 150°C junction temperature at full load.
Is DMC3060LVT suitable for automotive applications?
No-it is not AEC-Q101 qualified and lacks automotive-grade screening (e.g., HTOL, temperature cycling). While its –55°C to +150°C operating range overlaps automotive requirements, Diodes Incorporated does not certify this part for automotive use; qualified alternatives like DMC3025LVT-A are recommended for such applications.
DMC3060LVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 395pF @ 15V, 324pF @ 15V
- Power - Max:
- 830mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMC3060LVT-7 FAQ
1.How can I place an order for DMC3060LVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3060LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3060LVT-7 reliable?
The price and inventory of DMC3060LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3060LVT-7 is usually 5 days.
3.What payment methods are accepted for DMC3060LVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3060LVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3060LVT-7?
DMC3060LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3060LVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3060LVT-7?
For technical support, including DMC3060LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3060LVT-7 requirements.
6.How does Aetrix verify that DMC3060LVT-7 is sourced from the original manufacturer or authorized distributors?
All DMC3060LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3060LVT-7 meets industry standards.
7.What is the process for return or replacement of DMC3060LVT-7?
All DMC3060LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3060LVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3060LVT-7 part is unused and in its original packaging.
Return procedure for DMC3060LVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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