Diodes Incorporated DMC3060LVTQ-13

Overview

DMC3060LVTQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 60mΩ @ 10V) and P-channel (-30V, 95mΩ @ -10V) device for half-bridge or level-shifting power stages. It delivers 3.6A/–2.8A continuous drain current at +25°C and supports automotive-grade operation with AEC-Q101 qualification, IATF 16949 manufacturing, and PPAP capability.

For engineers reviewing the DMC3060LVTQ-13 datasheet, DMC3060LVTQ-13 pinout, DMC3060LVTQ-13 application, or DMC3060LVTQ-13 equivalent, this dual-channel discrete solution is selected for compact DC-DC converter topologies, backlight LED drivers, and automotive power management where space-constrained complementary switching and low R_DS(ON) at 4.5V/–4.5V gate drive are critical.

Technical Context

This device implements two independently controlled enhancement-mode MOSFETs-Q1 (N-channel) and Q2 (P-channel)-in one monolithic TSOT26 package. Each channel features fully specified gate threshold voltages (V_GS(TH): 0.7–1.8V for Q1; –0.7 to –2.1V for Q2), low input capacitance (C_iss: 395pF / 324pF), and fast switching times (t_D(ON): 5.8ns / 7.7ns).

The integrated complementary pair enables synchronous buck, H-bridge, and load-switch configurations without external pairing mismatch. Thermal resistance is rated at R_θJA = 151°C/W (min pad) and 108°C/W (1-inch copper), supporting stable operation across –55°C to +150°C junction temperature range under pulsed and steady-state conditions.

Key Specifications

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 2.8mm × 0.95mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LVTQ-7 and SI6926DQ-T1-GE3, the DMC3060LVTQ-13 uniquely balances 30V robustness, AEC-Q101 compliance, and TSOT26 miniaturization-making it the sole option for space-constrained automotive 24V DC-DC converters requiring production traceability and IATF 16949 sourcing.

Availability

DMC3060LVTQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, portable display backlight systems, and industrial point-of-load DC-DC converters requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for DMC3060LVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and test facilities across Asia and the Americas.

The DMC3060LVTQ belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial power management applications demanding high reliability, low R_DS(ON), and compact packaging.

FAQ

What is the maximum gate-source voltage rating for each channel?

The DMC3060LVTQ-13 specifies ±12V for both Q1 (N-channel) and Q2 (P-channel) gate-source voltage (V_GSS). Exceeding this rating risks permanent gate oxide damage. Drive circuits must limit gate voltage swing to within –12V to +12V relative to each channel's source terminal, especially critical for Q2 where G2–S2 must remain ≥ –12V during turn-on transitions.

Does this part support 3.3V logic-level gate drive?

Yes-Q1 delivers 100mΩ R_DS(ON) and Q2 delivers 140mΩ at V_GS = 4.5V and –4.5V respectively, and both remain functional down to 3.3V (R_DS(ON) = 150mΩ for Q1, 300mΩ for Q2). However, full-rated current (3.6A/–2.8A) requires ≥4.5V drive; 3.3V operation is viable for reduced-current, thermally relaxed designs.

How is thermal performance affected by PCB layout?

Thermal resistance varies significantly with layout: R_θJA = 151°C/W with minimum FR-4 pad, but improves to 108°C/W with a 1-inch² copper pour. The TSOT26 package relies entirely on solder-pad conduction-no exposed thermal pad-so maximizing copper area and via count under pins 1, 4, and 5 is essential to maintain T_J ≤ 150°C at full current.

Is the body diode of each MOSFET rated for continuous conduction?

Yes-the absolute maximum body diode forward current is 1.1A (Q1) and –1.0A (Q2) at T_A = +25°C, with V_SD = 0.8V (Q1) and –0.8V (Q2) at 1A. These ratings assume pulse operation; sustained conduction requires thermal derating per R_θJA curves and must stay within the SOA boundary shown in Figures 12 and 24 of the datasheet.