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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC31D5UDA-7B

Name: DMC31D5UDA-7B
Brand: Diodes Incorporated
SKU: DMC31D5UDA-7B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC31D5UDA-7B

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-SMD, No Lead

Datasheet:: DMC31D5UDA-7B.pdf

Description:: MOSFET N/P-CH 30V 0.4A 6DFN

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Product details

Overview

DMC31D5UDA-7B from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single ultra-small X2-DFN0806-6 package, integrating one 30V N-channel (R_DS(ON) = 1.5Ω @ V_GS = 4.5V, I_D = 0.4A) and one –30V P-channel (R_DS(ON) = 5Ω @ V_GS = –4.5V, I_D = –0.22A) device with ESD-protected gates, low gate threshold (±0.4–1.0V), and fast switching for compact power management in space-constrained portable electronics.

For engineers reviewing the DMC31D5UDA-7B datasheet, DMC31D5UDA-7B pinout, DMC31D5UDA-7B application, or DMC31D5UDA-7B equivalent, key selection criteria include dual-channel complementary operation at low V_GS, ultra-small 0.8mm × 0.6mm footprint, thermal resistance of 345°C/W, body diode forward voltage ≤1.0V (Q1) / ≤–1.0V (Q2), and RoHS-compliant lead-free construction.

Technical Context

This dual MOSFET implements complementary switching in a monolithic DFN package, enabling bidirectional control or half-bridge configurations without external pairing. Its low gate threshold voltages (0.4–1.0V for Q1, –0.4 to –1.0V for Q2) allow direct drive from 1.8V/2.5V logic, while matched R_DS(ON) temperature coefficients support stable current sharing across junction temperatures from –55°C to +150°C.

The integrated gate protection diodes and ESD-hardened structure (±10µA I_GSS) ensure robustness against transient events in portable interface circuits. Dynamic performance is characterized by low input capacitance (22.6pF/21.8pF), minimal reverse transfer capacitance (1.8pF/1.66pF), and sub-10ns turn-off fall times (7.5ns/8.7ns), supporting efficient high-frequency switching up to several MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V (Q1) / –30V (Q2): Supports rail-to-rail switching in 3.3V/5V systems with 20% headroom margin.
R_DS(ON)	1.5Ω @ 4.5V (Q1), 5Ω @ –4.5V (Q2): Enables <100mW conduction loss at 0.3A load current.
V_GS(TH)	0.4–1.0V (Q1), –0.4 to –1.0V (Q2): Compatible with 1.8V GPIO without level-shifting circuitry.
Q_g	0.38nC (Q1), 0.35nC (Q2): Allows fast switching with <1mA gate drive at 1MHz PWM frequency.
R_θJA	345°C/W: Limits junction rise to ~128°C at 370mW dissipation on FR-4 PCB with minimum pad layout.
C_iss	22.6pF (Q1), 21.8pF (Q2): Minimizes Miller effect and gate drive energy in high-speed switching.
I_D (max)	0.4A (Q1), –0.22A (Q2): Sufficient for LED biasing, sensor power gating, and low-current load switching.

Pinout & Package

Package: X2-DFN0806-6 - ultra-compact 0.8mm × 0.6mm, 0.36mm height, 6-terminal leadless plastic package with matte tin annealed terminals, moisture sensitivity level 1, and UL 94V-0 flammability rating.

Pin/Terminal	Circuit Role	Design Meaning
D1	N-channel drain	Main current path for high-side N-MOSFET; connected to load supply rail in high-side switch configuration.
S1	N-channel source	Reference node for Q1; tied to ground or low-side switch output in half-bridge topologies.
G1	N-channel gate	Control input for Q1; requires ≥0.4V to turn on; protected by integrated gate diode to V_DD.
D2	P-channel drain	Main current path for low-side P-MOSFET; connects to load return path in complementary switch applications.
S2	P-channel source	Reference node for Q2; typically tied to V_CC in high-side P-MOSFET configurations.
G2	P-channel gate	Control input for Q2; requires ≤–0.4V to turn on; protected by integrated gate diode to V_SS.

Key Features

Feature	Design Value
Ultra-small footprint	0.8mm × 0.6mm DFN package saves >70% board area vs. discrete SOT-363 solutions.
Low gate threshold	V_GS(TH) down to ±0.4V enables direct interfacing with 1.8V microcontroller I/O pins.
ESD-protected gate	±10µA gate leakage at ±10V ensures immunity to human-body-model ESD events up to 2kV.
Low input capacitance	C_iss = 22.6pF (Q1) / 21.8pF (Q2) reduces gate drive power and improves switching efficiency.
Thermally optimized	345°C/W R_θJA allows full-rated current operation on standard FR-4 with minimal copper pour.

Applications

Battery-Powered Load Switching

Low-Voltage Sensor Interface

Use Scenario: Power gating of BLE transceivers, accelerometers, or environmental sensors in wearables to extend battery life.

IC Role / Device Role / Timing Role: Complementary pair acts as bidirectional power switch controlling V_CC and GND paths simultaneously during sleep/wake transitions.

Use Value: Sub-100nA off-state leakage (IDSS ≤100nA) prevents parasitic drain; 0.4A/–0.22A rating supports typical sensor peak currents.

Use Scenario: Signal-level analog switching between multiple sensors and a shared ADC input in IoT edge nodes.

IC Role / Device Role / Timing Role: N- and P-channel devices operate as transmission gate with near-zero on-resistance mismatch (<1.5Ω vs. 5Ω) at 1.8V logic.

Use Value: Low R_DS(ON) variation over temperature (±15% from –55°C to +125°C) maintains signal integrity across operating range.

USB-C Port Power Control

Compact DC-DC Converter Auxiliary Switch

Use Scenario: VBUS and CC line protection in USB-C receptacles requiring reverse-current blocking and hot-swap capability.

IC Role / Device Role / Timing Role: P-channel Q2 blocks reverse current from VBUS to source; N-channel Q1 controls pull-up/pull-down on CC lines.

Use Value: Body diode forward voltage ≤1.0V (Q1) / ≤–1.0V (Q2) minimizes voltage drop in conduction path; ±12V V_GSS rating withstands USB transient surges.

Use Scenario: Synchronous rectification or auxiliary switching in miniature buck converters for PMICs in smartphones.

IC Role / Device Role / Timing Role: Dual-channel topology replaces discrete N+P FETs in low-duty-cycle synchronous rectifier or gate driver bootstrap circuits.

Use Value: Fast t_F = 7.5ns (Q1) / 8.7ns (Q2) supports >2MHz switching; low Q_g reduces gate driver losses in high-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-7	Higher R_DS(ON) (2.5Ω/7.5Ω), larger 1.0mm × 0.6mm package, no ESD protection.	Lower cost but unsuitable for 1.8V logic drive or ESD-prone environments.	Select when board space is less constrained and gate drive voltage ≥2.5V is guaranteed.
DMC3025LSD-7	Lower R_DS(ON) (0.85Ω/2.2Ω), same X2-DFN0806-6 package, but higher gate charge (0.65nC/0.55nC).	Better conduction efficiency but requires stronger gate driver for same switching speed.	Select when continuous current >0.3A is required and gate drive capability supports higher Q_g.

Compared with DMC2038LSD-7, DMC31D5UDA-7B offers lower gate threshold and ESD protection for 1.8V systems; versus DMC3025LSD-7, it trades higher R_DS(ON) for significantly lower Q_g, enabling faster switching with weaker drivers in battery-sensitive designs.

Availability

DMC31D5UDA-7B is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage sensor interface, and USB-C port power control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMC31D5UDA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and computing markets.

The DMC31D5UDA belongs to Diodes' ultra-compact complementary MOSFET product line, designed specifically for space-constrained portable electronics requiring low-voltage logic compatibility, minimal board area, and robust ESD performance.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

The N-channel (Q1) delivers 0.32A and the P-channel (Q2) delivers –0.17A at T_A = +70°C with device mounted on FR-4 PCB using minimum recommended pad layout. These values reflect derating from 0.4A/–0.22A at +25°C due to thermal resistance limitations and junction temperature constraints.

Can DMC31D5UDA-7B be used in a high-side P-channel switch configuration?

Yes - Q2 is rated for –30V V_DSS and –0.22A I_D at +25°C, with V_GS(TH) from –0.4V to –1.0V, making it suitable for high-side switching where gate drive is referenced to the source. A pull-up resistor to V_CC and active-low control signal achieves reliable turn-on at 1.8V logic levels.

Is the X2-DFN0806-6 package compatible with standard reflow profiles?

Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak temperature ≤260°C). Its matte tin annealed terminals meet MIL-STD-202 Method 208 solderability requirements, ensuring reliable joint formation on fine-pitch pads.

Does the device include internal body diodes, and what are their forward voltage characteristics?

Yes - both channels integrate intrinsic body diodes. Q1's diode has V_SD = 0.6–1.0V at I_S = 10mA; Q2's diode has V_SD = –0.6 to –1.0V under the same condition. These diodes enable freewheeling in inductive loads and reverse-current blocking in power-path applications without external components.

DMC31D5UDA-7B Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-SMD, No Lead

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel Complementary

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Ta)

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.38nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 22.6pF @ 15V

Power - Max:: 370mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN0806-6

DMC31D5UDA-7B FAQ

1.How can I place an order for DMC31D5UDA-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC31D5UDA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC31D5UDA-7B reliable?

The price and inventory of DMC31D5UDA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC31D5UDA-7B is usually 5 days.

3.What payment methods are accepted for DMC31D5UDA-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC31D5UDA-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC31D5UDA-7B?

DMC31D5UDA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC31D5UDA-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC31D5UDA-7B?

For technical support, including DMC31D5UDA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC31D5UDA-7B requirements.

6.How does Aetrix verify that DMC31D5UDA-7B is sourced from the original manufacturer or authorized distributors?

All DMC31D5UDA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC31D5UDA-7B meets industry standards.

7.What is the process for return or replacement of DMC31D5UDA-7B?

All DMC31D5UDA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMC31D5UDA-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC31D5UDA-7B part is unused and in its original packaging.

Return procedure for DMC31D5UDA-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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