Diodes Incorporated DMC31D5UDAQ-7B

Overview

DMC31D5UDAQ-7B from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single X2-DFN0806-6 package, integrating one 30V N-channel (R_DS(ON) = 1.5Ω @ V_GS = 4.5V, I_D = 0.4A) and one –30V P-channel (R_DS(ON) = 5Ω @ V_GS = –4.5V, I_D = –0.22A) device with ultra-low gate threshold (±0.4–1.0V), ESD-protected gates, and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMC31D5UDAQ-7B datasheet, DMC31D5UDAQ-7B pinout, DMC31D5UDAQ-7B application, or DMC31D5UDAQ-7B equivalent, this dual-channel discrete MOSFET supports low-voltage logic-level switching in space-constrained automotive body electronics, USB port protection, and bidirectional analog signal routing where gate drive compatibility with 1.5–4.5V controllers is critical.

Technical Context

This complementary pair operates as a matched N+P channel switch with independent gate control, enabling push-pull, H-bridge half-cell, or level-shifting configurations without external biasing. Its low R_DS(ON) at V_GS ≥ 1.5V and sub-1V gate threshold allow direct interfacing with 1.8V/2.5V/3.3V microcontrollers and PMICs.

Thermal performance is defined by R_θJA = 345°C/W on FR-4 with minimum pad layout, and safe operating area (SOA) supports pulsed currents up to ±0.8A with 10μs duty cycle. The integrated body diodes exhibit V_SD = ±0.6–1.0V at ±10mA, suitable for reverse polarity protection and flyback clamping.

Key Specifications

Pinout & Package

Package: X2-DFN0806-6 - ultra-small 0.8mm × 0.6mm × 0.36mm surface-mount package with exposed thermal pad, moisture sensitivity level 1, and matte tin–annealed copper terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Compared with DMC2038LSD-7, DMC31D5UDAQ-7B offers tighter gate threshold matching and automotive qualification; versus DMC3025LSD-7, it trades 30% higher R_DS(ON) for 40% lower gate charge and superior 1.5V drive capability-ideal for ultra-low-power wake-up circuits.

Availability

DMC31D5UDAQ-7B is available at Aetrix Electronics and suitable for automotive body electronics, USB interface protection, and low-voltage analog multiplexing requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMC31D5UDAQ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.

This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained automotive and portable electronics where gate drive simplicity, thermal efficiency, and qualification compliance are mandatory design criteria.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

The N-channel supports 0.32A and the P-channel supports –0.17A continuous drain current at T_A = +70°C with FR-4 PCB and minimum recommended pad layout, as specified in the Absolute Maximum Ratings table under Thermal Characteristics (Note 5). Derating follows the R_θJA = 345°C/W thermal resistance curve.

Does the DMC31D5UDAQ-7B require external gate resistors for typical 3.3V GPIO switching?

No external gate resistor is required for basic on/off control with 3.3V GPIOs driving G1/G2, as Q_g is only 0.35–0.38nC and C_iss is ≤22.6pF. However, a 10–47Ω series resistor is recommended to dampen ringing during high-frequency PWM (>1MHz) or when driving long PCB traces.

How is the thermal pad on the X2-DFN0806-6 package connected internally?

The thermal pad (exposed metal underside) is electrically isolated and thermally connected to the silicon die substrate. It must be soldered to a dedicated PCB copper pour using at least four thermal vias to internal ground or power planes to achieve the specified R_θJA = 345°C/W performance.

Can the N-channel and P-channel be used simultaneously as a synchronous rectifier pair?

Yes-the matched threshold voltages (±0.4–1.0V) and complementary R_DS(ON) curves allow coordinated gate drive for synchronous buck or boost topologies. However, cross-conduction must be prevented via dead-time insertion, as the device lacks integrated gate drivers or shoot-through protection logic.