Diodes Incorporated DMC3401LDW-7

Overview

DMC3401LDW-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT363 package, integrating one N-channel (30 V, 0.4 Ω @ 10 V) and one P-channel (−30 V, 0.9 Ω @ −10 V) device for half-bridge or level-shifting power control. It delivers 0.8 A continuous drain current (Q1) and −0.55 A (Q2) at +25°C, with ESD-protected gates and low input capacitance (50 pF / 19 pF), enabling efficient DC-DC converter switching.

For engineers reviewing the DMC3401LDW-7 datasheet, DMC3401LDW-7 pinout, DMC3401LDW-7 application, or DMC3401LDW-7 equivalent, key selection criteria include complementary R_DS(ON) matching at 4.5 V/−4.5 V, thermal resistance of 301 °C/W under enhanced layout, fast turn-off delay (16.8 ns Q1 / 28 ns Q2), and SOT363 footprint compatibility with space-constrained motor drive PCBs.

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode structures sharing a common SOT363 thermally optimized leadframe. Each channel features gate protection diodes and operates with ±20 V maximum gate-source voltage, supporting logic-level drive down to 4.5 V for Q1 and −4.5 V for Q2.

The device uses a molded green plastic package rated UL 94V-0, with matte tin-annealed terminals solderable per MIL-STD-202. Its junction-to-ambient thermal resistance drops from 433 °C/W (minimum pad) to 301 °C/W (1-inch copper plate), directly enabling higher pulsed current capability (4 A / −2.4 A) in compact power stages.

Key Specifications

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, green molding compound (UL 94V-0), 0.027 g mass, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC3401LDW-7, DMC2038LSD-7 trades higher on-resistance for lower gate charge and reduced Miller effect, while NTJD4152PZ-7 abandons complementarity to shrink footprint-making DMC3401LDW-7 optimal for thermally constrained, current-dense half-bridge implementations.

Availability

DMC3401LDW-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and USB-C power delivery systems requiring stable component supply across extended production lifecycles.

Supply support for DMC3401LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and consumer markets.

The DMC3401LDW belongs to Diodes' complementary MOSFET product line, engineered specifically for space- and thermally constrained power-switching applications where matched N/P characteristics and robust gate protection are critical.

FAQ

What is the maximum safe operating voltage for DMC3401LDW-7 in a half-bridge configuration?

The absolute maximum drain-source voltage is 30 V for Q1 and −30 V for Q2, but in half-bridge operation, the peak voltage across either device must not exceed 30 V due to bus transients and ringing. Derating to 24 V is recommended for automotive or industrial environments with >100 V/μs slew rates, as confirmed by SOA curves in Figure 12 and Figure 24 of DS41190 Rev. 6-2.

Can DMC3401LDW-7 be driven directly by a 3.3 V microcontroller GPIO?

Yes-Q1's gate threshold is 0.8–1.6 V and Q2's is −1.0 to −2.6 V, allowing partial enhancement at 3.3 V. However, R_DS(ON) rises to 0.7 Ω (Q1) and 1.7 Ω (Q2) at 4.5 V, so 3.3 V drive yields higher conduction loss. For <100 mA loads, direct GPIO drive is viable; for >200 mA, a level-shifting gate driver is advised per Figures 3 and 15.

How does the SOT363 package affect thermal performance in continuous operation?

With a 1-inch square copper pour, R_θJA is 301 °C/W, permitting 0.4 W dissipation before reaching 150°C junction temperature. Without the copper plate, R_θJA degrades to 433 °C/W, limiting continuous power to 0.29 W. The SOT363's exposed S1/S2 pads must be soldered to thermal vias or planes-per the suggested pad layout in DS41190 page 9-to achieve rated performance.

Is DMC3401LDW-7 qualified for automotive applications under AEC-Q101?

No-the datasheet explicitly states that AEC-Q101 qualification requires special change control, PPAP capability, and IATF 16949 manufacturing, and directs automotive users to contact Diodes directly. DMC3401LDW-7 is specified for industrial and commercial use only; its qualification status is not documented in DS41190 Rev. 6-2, and no AEC marking appears in the date code or packaging information.