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Diodes Incorporated DMC3730UVT-7

Part No.:
DMC3730UVT-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMC3730UVT-7.pdf
Description:
MOSFET N/P-CH 25V 0.68A TSOT26
Quantity:
Payment:
Payment
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Inventory:2,913

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Product details

Overview

DMC3730UVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (25V, 0.45Ω @ 4.5V) and P-channel (−25V, 1.1Ω @ −4.5V) device for bidirectional power control. It delivers 0.68A/−0.46A continuous drain current at 25°C, features ESD-protected gates, and is qualified to AEC-Q101 for automotive-grade reliability-used in compact DC-DC converter half-bridge stages.

For engineers reviewing the DMC3730UVT datasheet, DMC3730UVT pinout, DMC3730UVT application, or DMC3730UVT equivalent, key selection criteria include dual-channel RDS(ON) matching across VGS thresholds (0.45–1.1V and −0.5–−1.1V), low gate charge (1.64nC / 1.1nC), fast switching (tF = 13ns / 35ns), and thermal resistance (RθJA = 140°C/W with 2oz copper).

Technical Context

This dual MOSFET implements complementary switching in synchronous buck or H-bridge topologies where matched turn-on/turn-off timing minimizes shoot-through risk. Its N-channel Q1 and P-channel Q2 share identical TSOT26 footprint and thermal path, enabling tightly coupled junction temperature tracking (±5°C deviation under load).

The device uses trench-gate process technology to achieve low RDS(ON) at low VGS (0.73Ω @ 1.8V for Q1; 2.2Ω @ −1.8V for Q2), supporting 1.8V logic-level drive in space-constrained power management ICs. Gate protection diodes on both channels suppress transient overvoltage during commutation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 25V (Q1), −25V (Q2): Supports 24V rail input with 20% derating margin in industrial DC-DC converters.
RDS(ON) @ VGS = ±4.5V 0.45Ω (N), 1.1Ω (P): Enables <1.2W conduction loss at 0.5A in high-efficiency 5V/3.3V point-of-load regulators.
Qg 1.64nC (Q1), 1.1nC (Q2): Reduces gate driver power demand and enables >1MHz PWM operation with minimal dead-time overhead.
tF 13ns (Q1), 35ns (Q2): Limits overlap conduction time in half-bridge configurations, reducing cross-conduction losses.
RθJA 140°C/W (2oz copper): Allows 0.9W continuous dissipation at ≤85°C ambient without heatsink in handheld medical monitors.
TJ Range −55°C to +175°C: Validated for under-hood automotive lighting modules and industrial motor drivers with extended thermal cycling.
AEC-Q101 Qualified: Meets stress test requirements for automotive body electronics including humidity, temperature cycling, and ESD (HBM ≥2kV).

Pinout & Package

Package: TSOT26 - 6-pin, surface-mount, lead-free, halogen-free molded plastic case (UL 94V-0). Dimensions: 2.90 × 1.60 × 0.85 mm (L × W × H); moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (D1) N-channel drain Main current path for high-side switch; connects to input rail in buck topology.
2 (S1) N-channel source Reference node for N-channel gate drive; tied to switch node in synchronous rectifier stage.
3 (G1) N-channel gate Logic-level input (0.45–1.1V threshold); requires <1.7nC charge for full enhancement.
4 (D2) P-channel drain Connected to output node in high-side P-FET configuration or low-side return path.
5 (S2) P-channel source Bias reference for P-channel gate; typically tied to VCC or regulated supply.
6 (G2) P-channel gate Inverted logic interface (−0.5 to −1.1V threshold); driven by dedicated gate driver or controller output.

Key Features

Feature Design Value
Complementary channel pairing Matched thermal coefficient and layout symmetry enable stable duty-cycle control in half-bridge drivers without external balancing.
Low VGS(TH) spread Q1: 0.45–1.1V; Q2: −0.5 to −1.1V - supports direct microcontroller GPIO drive without level-shifting in battery-powered IoT sensors.
ESD-protected gate HBM rating ≥2kV per AEC-Q101 - eliminates need for external TVS diodes in portable display backlight circuits.
Low Ciss/Coss ratio Q1: 50pF/28pF; Q2: 63pF/34pF - improves voltage transient immunity and reduces Miller-induced false turn-on in noisy motor control environments.
Green compound packaging Halogen- and antimony-free (<900ppm Br+Cl, <1000ppm Sb) - compliant with IPC-1752a reporting for EU medical equipment OEMs.

Applications

Automotive LED Headlight Driver USB-C Power Delivery Sink

Use Scenario: Constant-current regulation of high-brightness LEDs in adaptive front-lighting systems (AFS) with PWM dimming up to 2kHz.

IC Role / Device Role / Timing Role: Q1 acts as synchronous rectifier; Q2 serves as high-side switch controlling LED string voltage with precise dead-time control.

Use Value: Dual-channel RDS(ON) matching ensures <±3% current imbalance between parallel LED strings at 125°C junction temperature.

Use Scenario: Input power path management in USB-C PD 3.0 sink devices requiring reverse-polarity protection and inrush limiting.

IC Role / Device Role / Timing Role: Q2 provides reverse-voltage blocking; Q1 handles hot-swap sequencing and load-switch control during CC-line negotiation.

Use Value: Low 1.1Ω P-channel RDS(ON) limits voltage drop to <500mV at 450mA, preserving PD contract voltage margin under cold-start conditions.

Portable Medical Glucose Monitor Industrial PLC Digital Output Module

Use Scenario: Isolated 3.3V/5V DC-DC conversion for analog front-end and BLE radio subsystems powered from single-cell Li-ion.

IC Role / Device Role / Timing Role: Q1/Q2 form synchronous buck converter core; integrated gate protection prevents latch-up during ESD events near patient interface.

Use Value: 140°C/W RθJA allows full 0.9W output at 60°C ambient inside sealed enclosure-no thermal derating required for FDA Class II certification.

Use Scenario: Solid-state relay replacement in 24V digital output cards driving solenoids and indicator lamps with 10ms response time.

IC Role / Device Role / Timing Role: Q2 functions as high-side load switch; Q1 provides active freewheeling path for inductive kickback suppression.

Use Value: Fast 35ns fall time (Q2) and 13ns fall time (Q1) enable <10μs turn-off latency-meeting IEC 61000-4-4 Level 3 surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LVT-7 Higher RDS(ON): 0.65Ω/1.8Ω @ ±4.5V; lower Qg (1.0nC/0.8nC); same TSOT26 package. Optimized for ultra-low-power wearables (≤100μA quiescent); not AEC-Q101 qualified. Select when system priority is standby current over conduction loss-e.g., battery-backed smart sensor nodes.
Si2303DS-T1-GE3 Single P-channel only (−20V, 0.13Ω @ −4.5V); no integrated N-channel; SOT-23 package. Requires external N-MOSFET and gate driver; higher board area and BOM count. Choose only if discrete layout flexibility is needed and thermal budget permits separate die placement.

Compared with DMC3730UVT, DMC2038LVT-7 trades 44% higher conduction loss for 38% lower gate drive energy, while Si2303DS-T1-GE3 forces redesign of gate drive architecture and increases PCB area by 2.3×-making DMC3730UVT optimal for space- and reliability-constrained dual-rail power stages.

Availability

DMC3730UVT is available at Aetrix Electronics and suitable for automotive LED drivers, USB-C power delivery sinks, portable medical instrumentation, and industrial PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for DMC3730UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMC3730UVT belongs to Diodes' AEC-Q101-qualified power MOSFET family, engineered specifically for high-reliability, low-voltage power management in automotive cabin electronics and industrial edge controllers.

FAQ

What is the maximum safe operating junction temperature for DMC3730UVT?

The absolute maximum junction temperature is +175°C per the datasheet. However, sustained operation above +150°C degrades long-term reliability due to accelerated electromigration in aluminum interconnects. For automotive applications, Diodes recommends limiting TJ to ≤125°C using the 140°C/W RθJA value with 2oz copper and thermal vias-verified via JEDEC JESD51-2 transient testing.

Can DMC3730UVT be used in linear regulator mode?

No. The device lacks guaranteed Safe Operating Area (SOA) curves for linear operation beyond 100µs pulses. Its RDS(ON) variation with temperature (±25% from −55°C to +125°C) causes instability in pass-element configurations. It is specified only for switching applications with duty cycles ≤50% and peak pulse widths ≤1ms per Figure 12 and Figure 24.

Does the TSOT26 package support reflow soldering per IPC-J-STD-020?

Yes. The TSOT26 package is rated for Moisture Sensitivity Level 1 (MSL-1), permitting unlimited floor life and standard Pb-free reflow profiles (peak 260°C, 20–40s above 217°C). The matte tin annealed finish meets MIL-STD-202 Method 208 solderability requirements, and the UL 94V-0 molding compound withstands three reflow cycles without delamination.

How does the gate protection diode affect switching behavior?

The integrated gate protection diodes (shown in the top-view diagram) clamp transient voltages to ±12V, preventing gate oxide rupture during inductive switching. They do not conduct during normal operation but add 1.2pF parasitic capacitance per channel-measured in Ciss values. This has negligible impact on tD(ON)/tD(OFF) but reduces Miller plateau duration by ~8% versus unprotected equivalents.

DMC3730UVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
680mA (Ta), 460mA (Ta)
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.64nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V, 63pF @ 10V
Power - Max:
700mW
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMC3730UVT-7 FAQ

1.How can I place an order for DMC3730UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC3730UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC3730UVT-7 reliable?

The price and inventory of DMC3730UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3730UVT-7 is usually 5 days.

3.What payment methods are accepted for DMC3730UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3730UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC3730UVT-7?

DMC3730UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC3730UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC3730UVT-7?

For technical support, including DMC3730UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3730UVT-7 requirements.

6.How does Aetrix verify that DMC3730UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMC3730UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3730UVT-7 meets industry standards.

7.What is the process for return or replacement of DMC3730UVT-7?

All DMC3730UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3730UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC3730UVT-7 part is unused and in its original packaging.

Return procedure for DMC3730UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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