Diodes Incorporated DMC3732UVT-13
- Part No.:
- DMC3732UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMC3732UVT-13.pdf
- Description:
- MOSFET N/P-CH 30V 1.1A TSOT26
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMC3732UVT from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 460mΩ @ 4.5V) and P-channel (–30V, 1000mΩ @ –4.5V) device for bidirectional power control. It delivers 1.1A/–0.7A continuous drain current at +25°C and supports DC-DC converters, backlighting, and dual-rail power management with low RDS(ON), fast switching (tF = 20ns), and 0.9nC/1.0nC gate charge.
For engineers reviewing the DMC3732UVT datasheet, DMC3732UVT pinout, DMC3732UVT application, or DMC3732UVT equivalent, this page provides verified electrical parameters, thermal performance data (RθJA = 230°C/W on FR-4), TSOT26 terminal mapping, and real-world use cases in compact power stages where space-constrained complementary switching is required.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode transistors sharing no internal connection-each channel operates with its own gate, source, and drain terminals. The N-channel exhibits VGS(TH) = 0.45–0.95V and RDS(ON) = 290–730mΩ across 1.8–4.5V drive; the P-channel has VGS(TH) = –0.5 to –1.1V and RDS(ON) = 0.72–2.0Ω across –1.8 to –4.5V drive.
Both devices feature low input capacitance (Ciss = 40.8pF / 54pF), minimal reverse transfer capacitance (Crss = 4.6pF / 5.8pF), and operate over –55°C to +150°C junction temperature. Thermal resistance is specified for two PCB layouts: 230°C/W (minimum pad) and 150°C/W (1-inch² copper plate).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS (Q1/Q2) | 30V / –30V - defines maximum blocking voltage before avalanche conduction in boost/buck or H-bridge half-bridge configurations |
| RDS(ON) @ VGS=4.5V | 460mΩ (N) / 1000mΩ (P) - determines conduction loss in 3.3V/5V logic-driven synchronous rectifiers or load switches |
| ID (TA=+25°C) | 1.1A (N) / –0.7A (P) - sets continuous current capability in low-power DC-DC output stages with derating above +70°C |
| Qg (VGS=±4.5V) | 0.9nC (N) / 1.0nC (P) - enables efficient 1–2MHz switching with <6Ω gate drivers without excessive drive power |
| RθJA (min pad) | 230°C/W - requires thermal-aware layout (e.g., 2oz copper, thermal vias) to sustain 0.54W dissipation at ambient +25°C |
| VGS(TH) | 0.45–0.95V (N) / –0.5 to –1.1V (P) - ensures reliable turn-on with standard GPIO or low-voltage PWM controllers |
| Ciss | 40.8pF (N) / 54pF (P) - limits Miller-induced shoot-through risk in high-side/low-side gate-drive timing design |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | N-channel drain | Main current path for high-side N-MOSFET; connects to input rail or inductor node in buck topology |
| 2 (S1) | N-channel source | Reference node for N-MOS gate drive; ties to ground or switch node depending on configuration |
| 3 (G1) | N-channel gate | Control input for N-MOS; requires ≥0.45V to turn on, driven by dedicated gate driver or microcontroller |
| 4 (D2) | P-channel drain | Main current path for low-side P-MOSFET; used as synchronous rectifier or reverse-polarity protection switch |
| 5 (S2) | P-channel source | Reference node for P-MOS gate drive; typically tied to VIN or regulated rail for proper VGS bias |
| 6 (G2) | P-channel gate | Control input for P-MOS; requires ≤–0.5V relative to S2 to activate; inverted logic compatible |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-channel integration | Single TSOT26 footprint replaces discrete N+P pair, reducing PCB area by >40% vs. two SOT-23 devices |
| Low RDS(ON) at 2.5V drive | 560mΩ (N) / 1500mΩ (P) enables operation from 2.5V logic rails without level-shifting circuitry |
| Fast switching with low Qgd | 0.3nC (N) / 0.1nC (P) gate-drain charge minimizes Miller plateau duration and improves efficiency at >500kHz |
| Enhanced thermal performance | 150°C/W RθJA with 1-inch² copper allows 0.83W power dissipation-critical for sustained 1A loads in sealed enclosures |
| Automotive-grade variant available | DMC3732UVTQ meets AEC-Q101 requirements for under-hood lighting and body control modules |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Driving white LED strings in portable displays using PWM dimming and current regulation. IC Role / Device Role / Timing Role: N-channel controls high-side current path; P-channel handles low-side sink and reverse-current blocking during PWM off-time. Use Value: Low RDS(ON) at 3.3V gate drive reduces conduction loss by 35% vs. legacy 1Ω P-MOS, extending battery life in handheld devices. |
Use Scenario: Enabling/disabling 5–20V power paths in USB-C PD sink applications with reverse-voltage protection. IC Role / Device Role / Timing Role: P-channel acts as ideal diode controller for input rail; N-channel manages load-switch enable sequencing with precise timing control. Use Value: Integrated complementary pair eliminates external gate resistors and timing mismatches, reducing BOM count by 3 components per port. |
| Compact DC-DC Buck Converter | Industrial Sensor Power Sequencing |
|
Use Scenario: High-efficiency 3.3V/1.8V point-of-load conversion in space-constrained IoT edge nodes. IC Role / Device Role / Timing Role: N-channel serves as synchronous high-side switch; P-channel functions as low-side freewheeling switch with body diode conduction minimized by fast turn-on. Use Value: 0.9nC/1.0nC total gate charge enables clean 1.2MHz switching with <10ns dead-time control, achieving >92% efficiency at 500mA load. |
Use Scenario: Controlled power-up/down sequencing of analog front-end (AFE), MCU, and RF transceiver in smart sensor modules. IC Role / Device Role / Timing Role: N-channel enables main 3.3V rail; P-channel independently controls isolated 1.2V core supply with independent gate timing. Use Value: Independent gate terminals allow precise delay insertion between rails via RC networks, meeting ±100ns sequencing tolerance for ADC reference stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038UVT-7 | Higher RDS(ON): 650mΩ/1300mΩ @ 4.5V; lower ID: 0.8A/–0.5A; same TSOT26 package | Suitable only for <500mA loads; reduced efficiency in 1MHz DC-DC due to higher conduction loss | Select when cost sensitivity outweighs efficiency needs and thermal margin is ample |
| DMN3026LSD-13 | Single N-channel (30V, 26mΩ @ 4.5V); requires external P-MOS or charge pump; SO-8 package | Enables higher current (3.5A) but occupies 3× PCB area and adds gate-drive complexity | Choose for high-current (>1.5A) buck stages where layout space permits larger package and extra components |
Compared with DMC3732UVT, DMC2038UVT-7 trades efficiency for cost in low-power roles, while DMN3026LSD-13 offers superior current handling at the expense of integration, board area, and gate-drive design effort-making DMC3732UVT optimal for space-constrained 1A-class dual-rail systems.
Availability
DMC3732UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery switching, and compact DC-DC converter designs requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for DMC3732UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the U.S., and manufacturing in China, Taiwan, and Thailand.
The DMC3732UVT belongs to Diodes' PowerMOS™ complementary pair portfolio, engineered specifically for high-density power management in portable and industrial equipment where footprint, thermal efficiency, and logic-level drive compatibility are critical.
FAQ
What is the maximum safe operating junction temperature for DMC3732UVT?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet's Safe Operating Area (SOA) curves. Continuous operation at this limit requires strict thermal design: 150°C/W RθJA rating applies only with 1-inch² copper; standard FR-4 layouts must limit power dissipation to 0.54W to stay within 230°C/W thermal resistance and avoid exceeding TJ(max).
Can DMC3732UVT be used in automotive applications?
The standard DMC3732UVT is not AEC-Q101 qualified, but Diodes offers the pin-compatible DMC3732UVTQ variant, which undergoes full automotive qualification including temperature cycling, humidity testing, and HTOL. For non-safety-critical cabin modules (e.g., infotainment backlighting), the standard part may be used with customer-specific validation-but DMC3732UVTQ is mandatory for under-hood or ADAS-related deployments.
How does the TSOT26 package affect PCB layout for thermal performance?
TSOT26's small footprint (2.9mm × 1.6mm) demands optimized thermal vias: at least four 0.3mm-diameter vias under the exposed drain pads (pins 1 and 4), filled or capped, connecting to inner-layer ground or power planes. The datasheet specifies two RθJA values-230°C/W assumes minimum recommended pad layout, while 150°C/W requires 1-inch² copper-so layout directly dictates achievable power handling.
Is there cross-conduction risk between the N- and P-channel devices?
No internal connection exists between the N- and P-channel dies-they share only the package substrate. Cross-conduction is solely governed by external gate drive timing. The low Qgd (0.3nC/0.1nC) and fast tF/tR (20ns/15.9ns) enable tight dead-time control (<50ns) with standard gate drivers, preventing shoot-through in half-bridge configurations when properly sequenced.
DMC3732UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta), 700mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA, 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 4.5V, 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40.8pF @ 25V, 54pF @ 15V
- Power - Max:
- 540mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMC3732UVT-13 FAQ
1.How can I place an order for DMC3732UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMC3732UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMC3732UVT-13 reliable?
The price and inventory of DMC3732UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC3732UVT-13 is usually 5 days.
3.What payment methods are accepted for DMC3732UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC3732UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMC3732UVT-13?
DMC3732UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMC3732UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMC3732UVT-13?
For technical support, including DMC3732UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC3732UVT-13 requirements.
6.How does Aetrix verify that DMC3732UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMC3732UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC3732UVT-13 meets industry standards.
7.What is the process for return or replacement of DMC3732UVT-13?
All DMC3732UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC3732UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMC3732UVT-13 part is unused and in its original packaging.
Return procedure for DMC3732UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMC3732UVT-13 Tags

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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

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2N7002DW-7-F
Diodes Incorporated

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SSM6L56FE,LM
Toshiba Semiconductor and Storage

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SSM6N37FU,LF
Toshiba Semiconductor and Storage

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2N7002DWH6327XTSA1
Infineon Technologies

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2N7002BKS,115
Nexperia USA Inc.

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DMG1016UDW-7
Diodes Incorporated

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UM6K33NTN
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DMG6602SVT-7
Diodes Incorporated

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