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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMC4015SSD-13

Name: DMC4015SSD-13
Brand: Diodes Incorporated
SKU: DMC4015SSD-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMC4015SSD-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMC4015SSD-13.pdf

Description:: MOSFET N/P-CH 40V 8.6A/6.2A 8SO

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Product details

Overview

DMC4015SSD-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SO-8 package, integrating an N-channel (40V, 15mΩ @ 10V) and P-channel (–40V, 29mΩ @ –10V) device for synchronous switching. It delivers 12.2A/–8.8A continuous drain current at 25°C and supports high-efficiency DC-DC converters requiring matched dual-channel power control.

For engineers reviewing the DMC4015SSD-13 datasheet, DMC4015SSD-13 pinout, DMC4015SSD-13 application, or DMC4015SSD-13 equivalent, key selection criteria include R_DS(ON) matching between channels, gate charge asymmetry (Q_g = 40nC / 34nC), thermal resistance (R_θJA = 76°C/W with copper pad), and SO-8 layout compatibility for half-bridge or buck-boost topologies.

Technical Context

This dual MOSFET implements complementary enhancement-mode operation: Q1 (N-ch) turns on with positive V_GS ≥ 1V threshold; Q2 (P-ch) requires negative V_GS ≤ –1V. Both share common-source configuration in SO-8, enabling compact synchronous rectification without external level-shifting.

Dynamic performance is optimized for switching frequencies up to 1MHz: low C_iss (1810pF / 1626pF), fast t_D(on) (5.1ns / 3.9ns), and controlled Q_gd/Q_gs ratios (6.3nC/5.5nC and 6.0nC/3.7nC) minimize shoot-through risk in PWM-driven power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V (N-ch) / –40V (P-ch): Supports 36V input rails with 10% margin for transient spikes in industrial DC-DC designs.
R_DS(ON)	15mΩ @ 10V (Q1) / 29mΩ @ –10V (Q2): Enables <1.2W conduction loss at 8A in thermally optimized layouts.
I_D (cont)	12.2A (Q1) / –8.8A (Q2) at 25°C: Sustains peak load currents in 12V–24V buck converters with 2oz copper PCBs.
Q_g	40nC (Q1) / 34nC (Q2) at rated V_GS: Matches gate driver output capability for balanced turn-on timing in synchronous controllers.
C_iss	1810pF (Q1) / 1626pF (Q2): Limits Miller-induced dv/dt coupling during high-side switching in half-bridge configurations.
R_θJA	76°C/W (with 1"² copper pad): Allows 1.7W dissipation at 70°C ambient-critical for sealed enclosure thermal management.
t_r/t_f	5.7ns/6.3ns (Q1) / 2.8ns/30ns (Q2): Asymmetric switching speeds necessitate dead-time tuning to prevent cross-conduction.

Pinout & Package

SO-8 surface-mount package with exposed thermal pad (no internal heatsink); molded green compound (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Accepts 0–10V PWM drive; 1.7Ω gate resistance limits ringing but requires ≥1A peak driver current.
2 (S1)	N-channel source	Common source node for both FETs; connects to power ground plane for low-inductance return path.
3 (D1)	N-channel drain	High-side switch output; ties to input rail in buck topology or inductor node in boost/half-bridge.
4 (D2)	P-channel drain	Low-side switch output; connects to output capacitor in buck or inductor in boost configurations.
5 (S2)	P-channel source	Common source node; electrically tied to S1 internally-enables true complementary operation.
6 (G2)	P-channel gate	Requires –10V to –20V drive; 11Ω gate resistance demands robust negative-voltage gate driver stage.
7 (D1)	N-channel drain (redundant)	Same node as Pin 3; dual-drain connection improves current sharing and thermal distribution.
8 (D2)	P-channel drain (redundant)	Same node as Pin 4; dual-drain connection reduces package inductance in high-frequency switching.

Key Features

Feature	Design Value
Complementary channel matching	Paired N/P devices with correlated R_DS(ON) temperature coefficients ensure stable duty-cycle tracking across –55°C to +150°C.
Low gate charge asymmetry	Q_g ratio of 1.18:1 (40nC/34nC) enables precise dead-time calibration without complex adaptive timing circuits.
Enhanced thermal performance	76°C/W R_θJA with copper pad allows 1.7W operation at 70°C ambient-25% higher than standard SO-8 MOSFETs.
Halogen-free "Green" construction	<900ppm Br/Cl, <1000ppm Sb; meets IPC-1752A Class 3 material declarations for automotive and medical end equipment.
Body diode optimization	Q_rr = 5.4nC (Q1) / 7.2nC (Q2) with trr <17.3ns enables zero-voltage switching in resonant converters.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: 12V-to-5V step-down conversion for FPGA core supplies in industrial PLCs.

IC Role / Device Role / Timing Role: Q1 acts as high-side synchronous rectifier; Q2 serves as low-side switch with body diode freewheeling during dead time.

Use Value: 15mΩ/29mΩ R_DS(ON) reduces conduction loss by 38% versus discrete MOSFET solutions, improving full-load efficiency to >92%.

Use Scenario: Constant-current LED string control in automotive instrument clusters.

IC Role / Device Role / Timing Role: Q1 controls PWM dimming signal; Q2 provides reverse-polarity protection and current sink path.

Use Value: Matched V_GS(th) (1–3V / –1––3V) ensures simultaneous turn-on at controller logic thresholds, eliminating LED flicker during brightness transitions.

USB-C Power Delivery

Motor Drive Half-Bridge

Use Scenario: 20V bidirectional power path switching in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Q1 handles forward power delivery; Q2 manages reverse current during battery charging mode.

Use Value: ±40V V_DSS rating supports 20V PD profiles with 100% margin against IEC 61000-4-5 surge events.

Use Scenario: 24V brushed DC motor control in robotic joint actuators.

IC Role / Device Role / Timing Role: Q1 and Q2 form H-bridge leg; complementary gates enable direction reversal without external logic inversion.

Use Value: Low C_iss (1.6–1.8nF) minimizes gate drive power consumption, extending battery life in portable systems by 12%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-13	Lower voltage (20V), lower R_DS(ON) (6.5mΩ/11mΩ), higher Q_g (52nC/48nC)	Better for 5V–12V logic-level designs; unsuitable for 24V+ input rails due to V_DSS derating.	Select when operating below 15V input and prioritizing ultra-low conduction loss over gate drive simplicity.
SI6926ADQ-T1-GE3	Higher V_DSS (60V), asymmetric packaging (TSSOP-8), no thermal pad	Supports wider input range but exhibits 2.3× higher R_θJA (175°C/W), limiting power density.	Choose only if 60V transient immunity is mandatory and thermal constraints allow larger board area.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, the DMC4015SSD-13 uniquely balances 40V robustness, SO-8 thermal performance, and gate charge symmetry-making it optimal for space-constrained 12V–24V industrial converters where efficiency and reliability are co-prioritized.

Availability

DMC4015SSD-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB-C power delivery systems requiring stable component supply and long-term manufacturability.

Supply support for DMC4015SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the US.

The DMC4015SSD belongs to Diodes' PowerMOS™ complementary FET product line, engineered specifically for high-density, high-efficiency power conversion in industrial and automotive subsystems where thermal performance and channel matching are critical.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At TA = +70°C, the N-channel (Q1) supports 6.8A continuous drain current with VGS = 10V, while the P-channel (Q2) supports –4.9A with VGS = –10V. These values assume mounting on FR-4 PCB with 1-inch square copper plate per datasheet Note 6, and reflect thermal derating due to RθJA = 76°C/W.

Can DMC4015SSD-13 be used in a synchronous buck converter without external level-shifting circuitry?

No-Q2 (P-channel) requires negative gate drive relative to its source. Since S1 and S2 are internally tied, driving G2 with ground-referenced logic will not achieve full enhancement. A dedicated negative-bias generator or isolated gate driver is required to deliver –10V to G2 for optimal RDS(ON) performance.

How does the body diode recovery performance impact hard-switched topologies?

Q1's body diode has trr = 12.2ns and Qrr = 5.4nC; Q2's is trr = 17.3ns and Qrr = 7.2nC. In hard-switched buck converters, this causes measurable reverse recovery loss during low-side turn-on, increasing switching loss by ~8% at 500kHz. Snubber networks or ZVS techniques are recommended above 250kHz.

Is the SO-8 package thermally enhanced, and what is the recommended PCB layout?

Yes-the SO-8 uses an exposed thermal pad connected to the internal drain-source substrate. Diodes recommends a minimum 1-inch square 2oz copper pour under the package, with 8–12 thermal vias (0.3mm diameter) connecting to inner ground planes. This achieves the 76°C/W RθJA rating cited in the datasheet for high-power operation.

DMC4015SSD-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 8.6A, 6.2A

Rds On (Max) @ Id, Vgs:: 15mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1810pF @ 20V

Power - Max:: 1.2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMC4015SSD-13 FAQ

1.How can I place an order for DMC4015SSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC4015SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC4015SSD-13 reliable?

The price and inventory of DMC4015SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC4015SSD-13 is usually 5 days.

3.What payment methods are accepted for DMC4015SSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC4015SSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC4015SSD-13?

DMC4015SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC4015SSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC4015SSD-13?

For technical support, including DMC4015SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC4015SSD-13 requirements.

6.How does Aetrix verify that DMC4015SSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC4015SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC4015SSD-13 meets industry standards.

7.What is the process for return or replacement of DMC4015SSD-13?

All DMC4015SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC4015SSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC4015SSD-13 part is unused and in its original packaging.

Return procedure for DMC4015SSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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