Diodes Incorporated DMC4028SSD-13

Overview

DMC4028SSD-13 from Diodes Incorporated is a complementary dual enhancement-mode MOSFET in SO-8 package, integrating one 40V/7.2A N-channel and one –40V/–5.2A P-channel device. It delivers R_DS(on) of 28 mΩ @ V_GS = 10 V (Q1) and 50 mΩ @ V_GS = –10 V (Q2), with fast switching (t_r = 12.4 ns, t_f = 10.7 ns for Q1), enabling high-efficiency half-bridge and H-bridge motor control stages.

For engineers reviewing the DMC4028SSD-13 datasheet, DMC4028SSD-13 pinout, DMC4028SSD-13 application, or DMC4028SSD-13 equivalent, key selection criteria include dual-channel complementary conduction capability, SO-8 thermal performance (R_θJA = 58 °C/W with two active die), AEC-Q101 qualification readiness, and body diode recovery specs (Q_rr = 799 nC / 841 nC).

Technical Context

This dual MOSFET implements independent N- and P-channel silicon dies in a single SO-8 leadframe, supporting synchronous rectification and bidirectional current control without external level-shifting. Its gate threshold voltages (V_GS(th) = 1.0–3.0 V for Q1; –1.0 to –3.0 V for Q2) enable direct microcontroller drive at 3.3 V or 5 V logic levels.

The device features matched dynamic parameters: Q_g = 12.9 nC (Q1) and 14 nC (Q2) at ±10 V, C_iss = 604 pF / 674 pF, and tightly coupled thermal resistance (R_θJL = 53 °C/W for both channels), allowing balanced power distribution in DC-DC buck-boost and dual-active-clamp topologies.

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, molded plastic with matte tin-plated copper leadframe; UL 94V-0 rated; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Compared with DMC3028LSD-7 and SI6926ADQ-T1-GE3, the DMC4028SSD-13 uniquely balances 40 V robustness, AEC-Q101 readiness, and matched N/P dynamic parameters-making it optimal for automotive motor control and industrial 24 V systems demanding reliability and timing precision.

Availability

DMC4028SSD-13 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and DC-DC converter applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for DMC4028SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

The DMC4028SSD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency power conversion in space-constrained applications-emphasizing low R_DS(on), fast switching, and automotive-grade reliability.

FAQ

What is the maximum continuous drain current for each channel at 70 °C ambient?

At T_A = 70 °C, the N-channel (Q1) supports 5.5 A and the P-channel (Q2) supports 4.2 A with one active die, or 6.5 A (Q1) and 4.8 A (Q2) when both channels operate simultaneously under derated power conditions per the datasheet's dual-die thermal curve.

Does DMC4028SSD-13 require a gate driver IC for 5 V microcontroller interfacing?

No external gate driver is required for basic on/off control: the N-channel V_GS(th) (1.0–3.0 V) and P-channel V_GS(th) (–1.0 to –3.0 V) ensure full enhancement with 5 V logic swing. However, for >1 MHz PWM or high-side P-channel switching with fast rise/fall, a dedicated driver improves timing control and reduces shoot-through risk.

How is thermal performance affected when both MOSFETs operate simultaneously?

When both channels conduct, the SO-8 package's thermal resistance drops to R_θJA = 58 °C/W (vs. 70 °C/W for single-die), increasing total allowable power dissipation to 2.16 W. This reflects improved heat spreading across the shared leadframe and exposed drain pad, verified under JEDEC-standard 25 mm × 25 mm PCB conditions.

Is the body diode in each channel suitable for synchronous rectification?

Yes-the integrated body diodes exhibit Q_rr = 799 nC (Q1) and 841 nC (Q2) with t_rr = 135 ns and 138 ns, respectively, and V_SD = 0.845 V / –0.865 V at 6 A. These values support efficient synchronous rectification in buck, boost, and flyback converters up to 500 kHz, provided gate timing avoids concurrent conduction.