Diodes Incorporated DMC4028SSDQ-13

Overview

DMC4028SSDQ-13 from Diodes Incorporated is an AEC-Q101-qualified complementary dual enhancement-mode MOSFET in SO-8 package, integrating a 40V/7.2A N-channel and a −40V/−5.2A P-channel device. It delivers R_DS(on) of 28 mΩ @ V_GS = 10 V (Q1) and 50 mΩ @ V_GS = −10 V (Q2), with fast switching (t_r = 12.4 ns, t_f = 10.7 ns for Q1), optimized for bidirectional power control in automotive DC-DC converters.

For engineers reviewing the DMC4028SSDQ-13 datasheet, DMC4028SSDQ-13 pinout, DMC4028SSDQ-13 application, or DMC4028SSDQ-13 equivalent, key selection criteria include dual-channel complementary operation, AEC-Q101 qualification, SO-8 thermal performance (R_θJA = 58 °C/W with two active die), gate charge asymmetry (Q_g = 12.9 nC / 14 nC), and body diode recovery (Q_rr = 799 nC / 841 nC).

Technical Context

This dual MOSFET implements independent N- and P-channel enhancement-mode silicon structures in a single SO-8 thermally enhanced leadframe. The N-channel (Q1) features 22.8 S transconductance and 604 pF C_iss, while the P-channel (Q2) provides 16.6 S g_fs and 674 pF C_iss, enabling matched yet asymmetric drive requirements in half-bridge or H-bridge configurations.

It operates across −55 °C to +150 °C junction temperature, with AEC-Q101-compliant gate oxide integrity (±16 V V_GSS max), and supports pulsed drain currents up to 27.3 A (Q1) and 20.4 A (Q2) under defined pulse conditions. Thermal design leverages 53 °C/W R_θJL to solder point for both dies.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-mount, molded plastic, UL 94V-0, moisture sensitivity level 1). Dual-die layout with isolated source terminals enables independent high-side (P-ch) and low-side (N-ch) control in half-bridge topologies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Compared with DMC3028LSDQ-7 and DMC4050SSDQ-13, DMC4028SSDQ-13 offers optimal balance of 40 V headroom, moderate R_DS(on), and AEC-Q101 compliance-making it ideal for 12 V/24 V automotive power stages where voltage margin and thermal stability are prioritized over ultra-low conduction loss or extreme current handling.

Availability

DMC4028SSDQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and LED backlighting systems requiring stable component supply with AEC-Q101 assurance and long-term production continuity.

Supply support for DMC4028SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.

This part belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for automotive power distribution, motor control, and DC-DC conversion where thermal robustness, gate drive compatibility, and long-term parametric stability are essential.

FAQ

Is DMC4028SSDQ-13 pin-compatible with DMC4028SSD-13?

Yes-both share identical SO-8 pinout, internal die configuration, and electrical specifications. The only difference is automotive qualification: DMC4028SSDQ-13 is AEC-Q101 certified with extended temperature screening and traceability, while DMC4028SSD-13 is commercial-grade. No PCB redesign is needed for upgrade.

What is the maximum safe operating area (SOA) limitation for continuous DC operation?

At T_A = 25 °C with two active dies on 25 mm × 25 mm FR4, the absolute maximum DC power is 2.16 W (per the derating curve in Rev 2–2, page 3). This corresponds to ~6.5 A through Q1 or ~4.8 A through Q2 at V_DS = 10 V, constrained by R_θJA = 58 °C/W and T_J(max) = 150 °C.

Can the body diodes be used for synchronous rectification?

Yes-the N-channel and P-channel body diodes are characterized with V_SD = 0.845 V and −0.865 V respectively at 6 A, and Q_rr = 799 nC and 841 nC. These values support synchronous rectification in buck/boost topologies up to ~500 kHz, provided gate timing avoids shoot-through and accounts for reverse recovery tail current.

Does the SO-8 package support thermal vias under the exposed drain pads?

Yes-the SO-8 outline (AP02002) specifies exposed drain pads for both Q1 (D1) and Q2 (D2). Diodes Incorporated recommends 4–6 thermal vias (0.3 mm diameter, 0.8 mm pitch) filled with solder to inner ground/power planes to achieve the stated R_θJA = 58 °C/W rating. Pad layout AP02001 provides exact copper patterns.