Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMC4029SSD-13

Part No.:
DMC4029SSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC4029SSD-13.pdf
Description:
MOSFET N/P-CH 40V 9A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:410

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMC4029SSD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SO-8 package, integrating one N-channel (40V, 24mΩ @ 10V) and one P-channel (−40V, 45mΩ @ −10V) device. It delivers 9.0A/−6.5A continuous drain current at +25°C and supports high-efficiency DC-DC converters and power-management functions requiring bidirectional switching with low conduction loss.

For engineers reviewing the DMC4029SSD datasheet, DMC4029SSD pinout, DMC4029SSD application, or DMC4029SSD equivalent, this dual-channel MOSFET enables compact half-bridge and H-bridge designs for backlighting, load switching, and synchronous rectification where matched RDS(ON), fast switching (tF = 4.8ns Q2 / 25.5ns Q1), and low gate charge (Qg = 19.1nC / 21.5nC) are critical.

Technical Context

This SO-8 packaged device integrates two discrete enhancement-mode MOSFETs-N-channel Q2 and P-channel Q1-with independent gate terminals and shared source/drain connections per channel. Its complementary topology supports level-shifted gate drive in buck-boost and inverting topologies without external logic inversion.

The device features asymmetric dynamic parameters: Q2 exhibits lower Ciss (1060pF) and faster tD(OFF) (15.1ns), while Q1 has higher gate resistance (12.6Ω) and longer tR/tF, reflecting optimized trade-offs for high-side (P-ch) and low-side (N-ch) roles in bidirectional power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V (Q2), −40V (Q1): Supports 12V/24V rail systems with 2× safety margin against transients.
RDS(ON) @ VGS = 10V 24mΩ (Q2), 45mΩ (Q1): Enables ≤1.2W conduction loss at 7A/−5A in thermally constrained PCB layouts.
Qg @ VGS = 10V 19.1nC (Q2), 21.5nC (Q1): Allows efficient 1MHz switching with <2W gate drive power using 5V logic-level drivers.
Ciss 1060pF (Q2), 1154pF (Q1): Limits Miller-induced shoot-through risk in hard-switched half-bridges.
tF 4.8ns (Q2), 25.5ns (Q1): Enables precise dead-time control to prevent cross-conduction in synchronous rectifiers.
RθJA (Steady State) 71°C/W (Note 6 layout): Requires ≥1in² 2oz copper pour to maintain TJ < 125°C at full rated current.

Pinout & Package

Package: SO-8, surface-mount, lead-free, RoHS-compliant molded plastic (UL 94V-0). Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
S1 N-channel source Common source node for Q2; connects to ground or low-side return path in half-bridge.
G1 N-channel gate Independent gate input for Q2; requires 10V drive for minimum RDS(ON).
D1 N-channel drain Output node for Q2; ties to switch node in buck or synchronous rectifier configurations.
S2 P-channel source Common source node for Q1; connects to input rail in high-side switch applications.
G2 P-channel gate Independent gate input for Q1; driven negative relative to S2 for turn-on.
D2 P-channel drain Output node for Q1; shares drain connection with D1 in complementary pair configuration.

Key Features

Feature Design Value
Complementary channel pairing Matched thermal and electrical characteristics enable symmetrical dead-time design in H-bridges without external balancing components.
Low RDS(ON) asymmetry Q2/Q1 RDS(ON) ratio of 1.88:1 at 10V matches typical current imbalance in buck-derived topologies.
Fast body diode recovery tRR = 10.5ns (Q2), 9.61ns (Q1): Reduces reverse recovery losses in synchronous rectification below 500kHz.
Lead-free & halogen-free Meets JEDEC high-reliability standards and automotive PPAP requirements when qualified under AEC-Q101.

Applications

LED Backlight Driver Synchronous Buck Converter

Use Scenario: Driving parallel LED strings in automotive instrument clusters with PWM dimming up to 20kHz.

IC Role / Device Role / Timing Role: Q2 acts as low-side PWM switch; Q1 serves as high-side current sink for current-controlled boost stage.

Use Value: Combined RDS(ON) < 70mΩ minimizes I²R loss across 5A string current, enabling >92% efficiency at 12V input.

Use Scenario: 5V-to-3.3V point-of-load conversion in industrial PLC I/O modules with 4A output.

IC Role / Device Role / Timing Role: Q2 operates as synchronous rectifier; Q1 functions as high-side main switch in buck topology.

Use Value: Low Qg and fast tF allow stable 1MHz operation with <50ns dead time, reducing output ripple by 35% vs. Schottky solution.

H-Bridge Motor Control USB-C Power Delivery Switch

Use Scenario: Bidirectional 24V/2A brushed DC motor control in smart HVAC actuators.

IC Role / Device Role / Timing Role: Complementary pair forms two legs of H-bridge; Q1/Q2 alternately conduct in forward/reverse quadrants.

Use Value: Matched VGS(TH) (±1.0–3.0V) ensures consistent turn-on timing across temperature (−55°C to +150°C), eliminating directional torque skew.

Use Scenario: 20V/3A bidirectional power path switching in USB-C PD 3.1 EPR sink applications.

IC Role / Device Role / Timing Role: Q1 handles reverse-blocking during sink mode; Q2 conducts forward current during source mode.

Use Value: −40V/40V BVDSS rating provides 2× margin over 20V PD EPR max, while low Coss (84pF both devices) maintains <15ns propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC3029LSD-7 SO-8, same Q1/Q2 specs but 30V rating (BVDSS = ±30V); lower RDS(ON) (18mΩ/35mΩ @ 10V). Better suited for 5V/12V systems only; insufficient for 24V industrial rails due to reduced voltage margin. Select when operating below 15V input and prioritizing conduction loss over transient robustness.
SI6926ADQ-T1-GE3 SO-8, ±40V, but Q1/Q2 share gate pins (non-independent); RDS(ON) 28mΩ/52mΩ @ 10V; higher Ciss (1250pF/1300pF). Limited to unidirectional or non-phase-critical topologies due to tied gates; unsuitable for true H-bridge dead-time control. Choose only for simple load switches where independent gate control is unnecessary and cost is primary constraint.

Compared with DMC4029SSD, DMC3029LSD-7 offers lower on-resistance but sacrifices 10V voltage headroom critical for 24V surge immunity, while SI6926ADQ-T1-GE3 eliminates gate independence-compromising timing precision in synchronous rectifiers and motor drives requiring phase-aligned switching.

Availability

DMC4029SSD is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and H-bridge motor control requiring stable component supply across automotive, industrial, and consumer electronics programs.

Supply support for DMC4029SSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions and signal integrity products for industrial, automotive, and computing markets.

The DMC4029SSD belongs to Diodes' PowerMOS™ complementary pair family, engineered specifically for space-constrained, high-frequency power conversion where matched N/P-channel performance and JEDEC-qualified reliability are mandatory.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

At TA = +70°C, the N-channel Q2 supports 5.6A continuous drain current (VGS = 10V), while the P-channel Q1 supports −4.1A under the same conditions. These values reflect derating from the +25°C ratings (7.0A/−5.1A) due to thermal resistance limitations in standard FR-4 layouts with 2oz copper.

Can DMC4029SSD be used in automotive applications?

Yes-DMC4029SSD is qualified to JEDEC high-reliability standards referenced in AEC-Q101. For full automotive qualification (AEC-Q101 stress testing, PPAP documentation, and IATF 16949 manufacturing), refer to the automotive-grade variant DMC4029SSDQ, which carries the 'Q' suffix and is listed on Diodes' automotive products page.

What is the recommended gate drive voltage range for reliable switching?

For guaranteed RDS(ON) performance, drive Q2 with VGS = +10V (max ±20V) and Q1 with VGS = −10V (max ±20V). At VGS = ±4.5V, RDS(ON) increases to 32mΩ/55mΩ, making it suitable for 3.3V logic-driven applications where conduction loss is secondary to drive simplicity.

How does the SO-8 package's thermal performance compare between steady-state and pulsed operation?

In steady-state operation on a 1in² 2oz copper pad, RθJA is 71°C/W; under short-duration pulses (t < 10s), it improves to 43°C/W. This 40% reduction allows brief peak currents up to 70A (Q2) and −40A (Q1) without exceeding TJ = 150°C, supporting overload protection in motor-start scenarios.

DMC4029SSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs:
24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.8nC @ 4.5V, 10.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 20V, 1154pF @ 20V
Power - Max:
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC4029SSD-13 FAQ

1.How can I place an order for DMC4029SSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC4029SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC4029SSD-13 reliable?

The price and inventory of DMC4029SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC4029SSD-13 is usually 5 days.

3.What payment methods are accepted for DMC4029SSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC4029SSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC4029SSD-13?

DMC4029SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC4029SSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC4029SSD-13?

For technical support, including DMC4029SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC4029SSD-13 requirements.

6.How does Aetrix verify that DMC4029SSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC4029SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC4029SSD-13 meets industry standards.

7.What is the process for return or replacement of DMC4029SSD-13?

All DMC4029SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC4029SSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC4029SSD-13 part is unused and in its original packaging.

Return procedure for DMC4029SSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC4029SSD-13 Tags

  • DMC4029SSD-13
  • DMC4029SSD-13 PDF
  • DMC4029SSD-13 Datasheet
  • DMC4029SSD-13 Specifications
  • DMC4029SSD-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMC4029SSD-13
  • Buy DMC4029SSD-13
  • DMC4029SSD-13 Price
  • DMC4029SSD-13 Distributor
  • DMC4029SSD-13 Supplier
  • DMC4029SSD-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER