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Diodes Incorporated DMC6022SSD-13

Part No.:
DMC6022SSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMC6022SSD-13.pdf
Description:
MOSFET N/P-CH 60V 6A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,263

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Product details

Overview

DMC6022SSD from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SO-8 package, integrating an N-channel (60V, 29mΩ @ 10V) and P-channel (−60V, 50mΩ @ −10V) device for bidirectional power control. It delivers 6.0A/−5.0A continuous drain current at 25°C, supports fast switching (tF = 8.4ns N-ch, 45.3ns P-ch), and is qualified to AEC-Q101 for automotive-grade reliability in DC-DC converters and power management circuits.

For engineers reviewing the DMC6022SSD datasheet, DMC6022SSD pinout, DMC6022SSD application, or DMC6022SSD equivalent, this dual-channel MOSFET enables compact half-bridge and H-bridge designs with matched thermal behavior, low gate charge (Qg = 32nC/30.6nC), and robust avalanche energy rating (EAS = 24mJ).

Technical Context

This device implements a monolithic complementary pair topology where Q1 (N-channel) and Q2 (P-channel) share thermally coupled junctions in one SO-8 package, enabling synchronous rectification and bidirectional current control without external matching. Its gate threshold voltages are tightly specified (VGS(TH) = 1.0–3.0V for Q1, −1.0 to −3.0V for Q2), supporting logic-level drive compatibility down to 4.5V.

The integrated body diodes exhibit low reverse recovery charge (QRR = 12.5nC for Q1, 9.3nC for Q2) and fast tRR (18.1ns/15.2ns), minimizing switching losses in high-frequency buck and boost topologies. Thermal resistance RθJA is 74°C/W under enhanced layout (1-inch copper), enabling 2.0W steady-state dissipation at +25°C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
BVDSS (Q1/Q2) 60V / −60V - Enables use in 48V bus systems and industrial 24V/36V rails with 20% voltage margin.
RDS(ON) @ VGS=10V 29mΩ (N) / 50mΩ (P) - Delivers <0.9W conduction loss per FET at 5A, critical for thermally constrained PCB layouts.
Qg @ VGS=10V 32nC (N) / 30.6nC (P) - Supports >1MHz switching with moderate gate driver strength (e.g., TC4427).
ID Continuous (25°C) 6.0A (N) / −5.0A (P) - Sustains full-load current in 12W–15W DC-DC stages without derating on standard FR-4.
EAS (Q1/Q2) 24mJ / 24mJ - Withstands repetitive inductive turn-off stress in motor gate drivers and solenoid controls.
tRR (Q1/Q2) 18.1ns / 15.2ns - Reduces cross-conduction risk during dead-time transitions in half-bridge configurations.
AEC-Q101 Qualified Validated for automotive power modules, including engine control units and ADAS power supplies.

Pinout & Package

Package: SO-8, surface-mount, lead-free, green molding compound (UL 94V-0), 0.074g mass, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (D1) N-channel drain Main current path for high-side N-MOSFET; connects to input rail in high-side switch configuration.
2 (S1) N-channel source Reference node for N-FET gate drive; ties to load or common node in half-bridge output stage.
3 (G1) N-channel gate Control input for Q1; requires ≥10V over S1 to achieve rated RDS(ON).
4 (S2) P-channel source Common source node shared with S1 in complementary pair layout; forms midpoint in bridge circuits.
5 (D2) P-channel drain Main current path for low-side P-MOSFET; connects to ground or return path in high-side P-FET use.
6 (G2) P-channel gate Control input for Q2; driven negative relative to S2 (e.g., −10V) for full enhancement.
7, 8 (D1/D2) Drain tie (pins 1 & 5 internally connected to exposed pad) Thermal pad (pin 7/8) must be soldered to large copper pour for RθJC = 10°C/W performance.

Key Features

Feature Design Value
Complementary SO-8 integration Eliminates layout mismatch between N/P devices, ensuring matched switching timing and thermal coupling for stable bridge operation.
Low Ciss/Coss 2110pF/78pF (Q1), 1525pF/90pF (Q2) - Reduces Miller effect and gate drive power in high-frequency SMPS.
Enhanced avalanche ruggedness IAS = 22A (Q1), 25A (Q2) with L = 0.1mH - Survives unclamped inductive switching in relay drivers and motor commutation.
Logic-compatible gate thresholds VGS(TH) spans 1.0–3.0V (N) and −1.0 to −3.0V (P) - Allows direct microcontroller GPIO drive with minimal level-shifting.
AEC-Q101 qualification Passed stress tests including HTGB, HTRB, and temperature cycling - suitable for under-hood automotive power modules.

Applications

Automotive LED Headlamp Driver Industrial DC-DC Buck Converter

Use Scenario: High-brightness LED array dimming and fault protection in 12V/24V vehicle systems.

IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 serves as synchronous rectifier or active clamp during flyback phase.

Use Value: Low RDS(ON) minimizes heat generation in sealed headlamp housings; fast tF enables 500kHz+ dimming frequency for flicker-free operation.

Use Scenario: Point-of-load regulation for FPGA or DSP core voltage (e.g., 1.2V @ 5A) from 12V intermediate bus.

IC Role / Device Role / Timing Role: Dual FET forms synchronous buck power stage; Q1 (high-side) and Q2 (low-side) alternate conduction under PWM control.

Use Value: Matched thermal response prevents current imbalance; low Qg reduces gate driver losses, improving efficiency above 92% at full load.

USB-C Power Delivery Controller Interface Smart Home Relay Replacement Module

Use Scenario: Bidirectional 20V/3A power path control in USB PD sink/source negotiation circuits.

IC Role / Device Role / Timing Role: Complementary pair implements back-to-back switch for polarity-agnostic power routing.

Use Value: Symmetrical ±60V BVDSS and matched RDS(ON) ensure equal forward/reverse conduction loss; AEC-Q101 grade supports long-life consumer infrastructure.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels and lighting systems.

IC Role / Device Role / Timing Role: Q1 switches AC line hot; Q2 provides zero-crossing turn-off capability via body diode conduction.

Use Value: Fast tRR and low QRR suppress voltage spikes during inductive load interruption; SO-8 footprint simplifies retrofit onto legacy relay PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LSD-13 Lower voltage rating (30V/−30V); lower RDS(ON) (12mΩ/18mΩ); smaller SO-8 footprint with thermal pad. Restricted to ≤24V systems; better suited for portable battery-powered DC-DC where size and conduction loss dominate. Select when operating voltage ≤30V and board space is constrained; not drop-in for 48V applications.
SI6926ADQ-T1-GE3 Higher RDS(ON) (40mΩ/60mΩ @ 10V); higher Qg (42nC/40nC); same SO-8 package but non-AEC-Q101 rated. Lacks automotive qualification; higher switching loss limits usable frequency to ≤300kHz in high-efficiency designs. Acceptable for cost-sensitive industrial power supplies where AEC-Q101 is not mandated and thermal margin exists.

Compared with DMC6022SSD, DMC2038LSD-13 offers superior conduction efficiency below 30V but sacrifices voltage headroom, while SI6926ADQ-T1-GE3 trades off switching speed and automotive compliance for broader distributor availability and lower unit cost.

Availability

DMC6022SSD is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and smart home relay replacement modules requiring stable component supply across multi-year production cycles.

Supply support for DMC6022SSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMC6022SSD belongs to Diodes' high-reliability power MOSFET product line, engineered specifically for automotive and industrial power conversion where thermal stability, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum safe operating junction temperature for DMC6022SSD?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation at this limit requires strict adherence to the recommended 1-inch square copper pad layout and ambient temperature control. Derating begins at +125°C for continuous operation, and the device's RDS(ON) increases by ~1.5× from 25°C to 150°C, necessitating thermal simulation for high-power designs.

Can DMC6022SSD be used in a high-side P-channel configuration without a charge pump?

Yes - the P-channel device (Q2) has a VGS(TH) range of −1.0V to −3.0V and achieves 50mΩ RDS(ON) at VGS = −10V. When used as a high-side switch with source tied to VIN, driving G2 to ground yields VGS = −VIN; thus, it operates efficiently at VIN ≤ 10V without auxiliary circuitry. For 12V+ rails, a gate driver with negative output or level shifter is required.

How does the shared source connection (pins 2 and 4) affect PCB layout in half-bridge applications?

Pins 2 (S1) and 4 (S2) are internally bonded to the same metal frame and must be routed to a single low-inductance node - typically the power switch node (SW) in buck converters. This shared source eliminates floating node issues but mandates symmetrical trace lengths and a solid ground plane beneath both FETs to prevent shoot-through due to gate loop asymmetry or parasitic inductance.

Is the DMC6022SSD suitable for linear regulator applications?

No - the device is optimized for switching operation, not linear mode. Its Safe Operating Area (SOA) curve shows limited DC capability (≤1.5W at 25°C ambient), and prolonged linear operation causes rapid thermal runaway due to positive temperature coefficient of RDS(ON). The datasheet explicitly defines only pulsed and switched conditions; linear use voids AEC-Q101 qualification and risks parametric shift or failure.

DMC6022SSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs:
29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V, 30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2110pF @ 30V, 1525pF @ 30V
Power - Max:
1.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMC6022SSD-13 FAQ

1.How can I place an order for DMC6022SSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMC6022SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMC6022SSD-13 reliable?

The price and inventory of DMC6022SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMC6022SSD-13 is usually 5 days.

3.What payment methods are accepted for DMC6022SSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMC6022SSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMC6022SSD-13?

DMC6022SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMC6022SSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMC6022SSD-13?

For technical support, including DMC6022SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMC6022SSD-13 requirements.

6.How does Aetrix verify that DMC6022SSD-13 is sourced from the original manufacturer or authorized distributors?

All DMC6022SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMC6022SSD-13 meets industry standards.

7.What is the process for return or replacement of DMC6022SSD-13?

All DMC6022SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMC6022SSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMC6022SSD-13 part is unused and in its original packaging.

Return procedure for DMC6022SSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMC6022SSD-13 Tags

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